Abstract: A method includes attaching a package component to a package substrate, the package component includes: an interposer disposed over the package substrate; a first die disposed along the interposer; and a second die disposed along the interposer, the second die being laterally adjacent the first die; attaching a first thermal interface material to the first die, the first thermal interface material being composed of a first material; attaching a second thermal interface material to the second die, the second thermal interface material being composed of a second material different from the first material; and attaching a lid assembly to the package substrate, the lid assembly being further attached to the first thermal interface material and the second thermal interface material.

Abstract: An RF testing method is applied between a testing instrument and multiple devices under test at least including a first DUT and a second DUT. The testing instrument includes a signal generator and a signal analyzer. A sync signal is sent to the testing instrument and the first DUT, so that the first DUT occupies the signal generator to receive a testing signal from the signal generator. The first DUT sends an uplink signal to the signal analyzer based on the testing signal to occupy the signal analyzer for signal analysis at a first point in time. The sync signal is sent to the testing instrument and the second DUT, so that the second DUT occupies the signal generator to receive the testing signal from the signal generator at a second point in time. The first point in time is parallel to the second point in time.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.

Abstract: A fan braking structure includes a fan including a frame having an upright bearing cup, and a fan impeller having a vertical rotating shaft pivotally received in the bearing cup and provided at a free end with a groove; a braking structure located at a lower part of the bearing cup and including a brake plate and an electromagnet, and the brake plate being provided at one side with a protruded brake pin and at another side with a magnetic member; and an elastic element disposed between and pressed against a top of the shell and the brake plate. When the fan is inactive, the electromagnet is energized to produce magnetic poles that repel the magnetic member and compress the elastic element, such that the brake pin is magnetically pushed toward the rotating shaft to engage with the groove, causing the fan to brake and stop rotating inertially.

Abstract: An object detection method is suitable for a virtual reality system. The object detection method includes a plurality of first cameras of a head-mounted display (HMD) to capture a plurality of first frames. A plurality of second frames are captured through a plurality of second cameras in a tracker, wherein, the object detector searches for the object position in the first frames and the second frames.

Abstract: An apparatus for forming a package structure is provided. The apparatus includes a processing chamber for bonding a first package component and a second package component. The apparatus also includes a bonding head disposed in the processing chamber. The bonding head includes a plurality of vacuum tubes communicating with a plurality of vacuum devices. The apparatus further includes a nozzle connected to the bonding head and configured to hold the second package component. The nozzle includes a plurality of first holes that overlap the vacuum tubes. The nozzle also includes a plurality of second holes offset from the first holes, wherein the second holes overlap at least two edges of the second package component. In addition, the apparatus includes a chuck table disposed in the processing chamber, and the chuck table is configured to hold and heat the first package component.

Abstract: A circuit check method and an electronic apparatus applicable to a to-be-tested circuit are provided. The to-be-tested circuit has one or more first nodes related to a gate voltage of one or more transistor devices and a plurality of second nodes. The circuit check method includes: setting endpoint voltages of a plurality of input interface ports of the to-be-tested circuit; obtaining a first node voltage of the first node according to a conduction path of the to-be-tested circuit and the gate voltage of the transistor device; obtaining a second node voltage of each second node according to the conduction path, the endpoint voltages, and the first node voltage; and performing circuit static check on the to-be-tested circuit by applying the first node voltage and the second node voltage.

Abstract: A chip package which includes a glass fiber substrate made of FR-4 fiberglass is provided. The chip package further includes a substrate pad which is a stacked metal structure with a certain thickness and composed of a nickel layer, a palladium layer, and a gold layer, or a nickel layer and a gold layer stacked over at least one first circuit layer in turn. A total thickness of the substrate pad is 3.15-5.4 ?m. The glass fiber substrate and the substrate pad can bear positive pressure generated during wire bonding. Thereby at least one solder joint is formed on the substrate pad precisely and integrally. This helps reduction in material cost for manufacturers.

Abstract: A rate adjustment method includes a rate estimation model generating a plurality of estimated rates according to a plurality of training data, a revenue estimation model generating an estimated revenue according to the plurality of estimated rates, updating the rate estimation model according to the estimated revenue to generate an updated rate estimation model, and inputting a plurality of current data into the updated rate estimation model to update the plurality of estimated rates.

Abstract: A method includes etching a gate stack in a wafer to form a trench, depositing a silicon nitride liner extending into the trench, and depositing a silicon oxide layer. The process of depositing the silicon oxide layer includes performing a treatment process on the wafer using a process gas including nitrogen and hydrogen, and performing a soaking process on the wafer using a silicon precursor.

Abstract: The present disclosure provides a circuit board including a first circuit layer, a dielectric layer on the first circuit layer, and a seed layer on the dielectric layer and directly contacting the first circuit layer, in which a top surface of the seed layer includes a levelled portion. The circuit board also includes a second circuit layer on the levelled portion of the seed layer, in which a grain boundary density of the second circuit layer is lower than that of a portion of the seed layer directly contacting the first circuit layer.

Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.

Abstract: Methods and an apparatus for performing synchronization in New Radio (NR) systems are disclosed. A frequency band may be determined and may correspond to a WTRU. On a condition that the operational frequency band is a lower frequency, a synchronization signal block (SSB) index may be implicitly. On a condition that the operational frequency band is a higher frequency, an SSB index may be determined based on a hybrid method which includes determining the SSB index using both an implicit and an explicit method. A configuration of actually transmitted SSBs may be determined using a multi-level two stage compressed indication where SSB groups are determined based on a coarse indicator and actually transmitted SSBs with the SSB groups are determined based on a fine indicator.

Abstract: A package structure is provided. The package structure includes a conductive structure having a first portion and a second portion, and the second portion is wider than the first portion. The package structure also includes a semiconductor chip laterally separated from the conductive structure. The package structure further includes a protective layer laterally surrounding the conductive structure and the semiconductor chip. The first portion of the conductive structure has a sidewall extending from the second portion to a surface of the protective layer. The protective layer laterally surrounds an entirety of the sidewall of the first portion.

Abstract: A temperature-sensing and humidity-controlling fiber includes a hydrophilic material and a temperature-sensing material. The temperature-sensing material has a lower critical solution temperature (LCST) between 31.2° C. and 32.5° C. when a light transmittance thereof is in a range from 3% to 80%, in which a wavelength of the light is between 450 nm and 550 nm.

Abstract: A semiconductor device includes an insulating base layer, a semiconductor layer, an insulating layer, an isolation trench and a gettering site. The semiconductor layer and the insulating layer are disposed on the insulating base layer in sequence, and the isolation trench is disposed in the semiconductor layer and passes through the insulating layer. The isolation trench includes a first cross-section, a second cross-section and a third cross-section from top to bottom. The first cross-section is higher than the bottom surface of the insulating layer, and the second cross-section and the third cross-section are lower than the bottom surface of the insulating layer. The gettering site is disposed in the semiconductor layer and in contact with the isolation trench, and the vertex of the gettering site is lower than the second cross-section.

Abstract: In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.

Abstract: A method and apparatus are disclosed for demodulating a NR-PBCH signal. The method may comprise receiving a primary SS and an SSS. The received SSS signal may be used as a reference signal to detect demodulation reference signals of the NR-PBCH. These demodulation reference signals may be interleaved with data on the NR-PBCH. In one method, the NR-PBCH DMRS are associated with an SSB index in an effort to improve randomization in the synchronization process. The NR-PBCH payload may be demodulated using the PSS and/or SSS and the DMRS. In one embodiment, the NR-PBCH DMRS may mapped to DMRS REs on a frequency first and time second mapping basis.

Abstract: A heterogeneous integration semiconductor package structure including a heat dissipation assembly, multiple chips, a package assembly, multiple connectors and a circuit substrate is provided. The heat dissipation assembly has a connection surface and includes a two-phase flow heat dissipation device and a first redistribution structure layer embedded in the connection surface. The chips are disposed on the connection surface of the heat dissipation assembly and electrically connected to the first redistribution structure layer. The package assembly surrounds the chips and includes a second redistribution structure layer disposed on a lower surface and multiple conductive vias electrically connected to the first redistribution structure layer and the second redistribution structure layer. The connectors are disposed on the package assembly and electrically connected to the second redistribution structure layer.