Abstract: A method includes: positioning a wafer on an electrostatic chuck of a physical vapor deposition apparatus, the wafer including an opening exposing a conductive feature; setting a temperature of the wafer to a room temperature; forming a tungsten thin film in the opening by the physical vapor deposition apparatus, the tungsten thin film including a bottom portion that is on an upper surface of the conductive feature exposed by the opening, a top portion that is on an upper surface of a dielectric layer through which the opening extends and a sidewall portion that is on a sidewall of the dielectric layer exposed by the opening; removing the top portion and the sidewall portion of the tungsten thin film from over the opening; and forming a tungsten plug in the opening on the bottom portion by selectively depositing tungsten by a chemical vapor deposition operation.

Abstract: A WTRU may select sidelink unicast or groupcast to transmit data. If the WTRU selects sidelink unicast, the WTRU may select to use HARQ ACK/NACK feedback for the transmission. If the WTRU selects sidelink groupcast, either HARQ NACK or HARQ ACK/NACK may be selected depending upon one or more factors. The WTRU may select HARQ NACK or HARQ ACK/NACK depending upon one or more of: a number of WTRUs to receive the data; a condition of a channel associated with transmission; or a quality of service associated with transmission. The WTRU may select a first or second PSFCH format for feedback based upon one or more factors. The WTRU may select a first or second PSFCH format based upon one or more of: the selected sidelink unicast or groupcast; the selected HARQ NACK or HARQ ACK/NACK feedback; or a quality of service associated with the transmission.

Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

Abstract: Methods and an apparatus for performing synchronization in New Radio (NR) systems are disclosed. A frequency band may be determined and may correspond to a WTRU. On a condition that the operational frequency band is a lower frequency, a synchronization signal block (SSB) index may be implicitly. On a condition that the operational frequency band is a higher frequency, an SSB index may be determined based on a hybrid method which includes determining the SSB index using both an implicit and an explicit method. A configuration of actually transmitted SSBs may be determined using a multi-level two stage compressed indication where SSB groups are determined based on a coarse indicator and actually transmitted SSBs with the SSB groups are determined based on a fine indicator.

Abstract: Disclosed is a portable instrument for measuring gas concentration. A laser unit provides a laser beam required for laser spectral absorption. An optical unit includes a gas absorption cell (100). The gas absorption cell (100) includes a first reflective mirror (110), a second reflective mirror (120) and a cell tube (130), the first reflective mirror (110) and the second reflective mirror (120) are respectively connected to opposite ends of the cell tube (130). When the laser unit emits a laser beam, an optical path is formed between the first reflective mirror (110) and the second reflective mirror (120) within the cell tube (130). A heat recovery unit recycles heat generated by an electronic system unit (200) to the optical unit.

Abstract: A wireless transmit/receive unit (WTRU) may receive sounding reference signal (SRS) resource configuration information. The WTRU may also receive beam indication (ID) information and panel ID information in downlink control information (DCI) and determine a WTRU panel based on the panel ID information or the SRS resource configuration information. The WTRU may also determine uplink (UL) beam sweeping for each determined WTRU panel based on the beam ID using one or more sweeping parameters.

Abstract: A WTRU may include a memory and a processor. The processor may be configured to receive beam grouping information from a gNB or transmission and reception point (TRP). The beam grouping information may indicate a group of beams that the WTRU may report using group-based reporting. The group-based reporting may be a reduced level of reporting compared to a beam-based reporting. The group-based report may include measurement information for a representative beam. The representative beam may be one of the beams in the group or represents an average of the beams in the group. Alternatively, the representative beam may be a beam that has a maximum measurement value compared to other beams in the group. The group-based report may include a reference signal received power (RSRP) for the representative beam and a differential RSRP for each additional beamin the beam group.

Abstract: Multiple Access (MA) signature (MAS) features may be provided, for example, MAS pool definition and/or configuration may be provided. MAS indicator transmission may be provided. For example, independent indication through demodulation reference signal (DMRS) transmission and/or scheduling request (SR)-based transmission may be provided. Reliable MA detection may be provided. For example, multiple zone transmission and/or diversity may be provided. Non-orthogonal multiple-access (NOMA) transmission without MAS indication may be provided. Physical uplink control channel (PUCCH)-based NOMA indication may be provided. NOMA layer indicator (NLI) based NOMA indication may be provided.

Abstract: A semiconductor structure includes a source/drain feature in the semiconductor layer. The semiconductor structure includes a dielectric layer over the source/drain feature. The semiconductor structure includes a silicide layer over the source/drain feature. The semiconductor structure includes a barrier layer over the silicide layer. The semiconductor structure includes a seed layer over the barrier layer. The semiconductor structure includes a metal layer between a sidewall of the seed layer and a sidewall of the dielectric layer, a sidewall of each of the silicide layer, the barrier layer, and the metal layer directly contacting the sidewall of the dielectric layer. The semiconductor structure includes a source/drain contact over the seed layer.

Abstract: Methods and systems for transmitting uplink control information and feedback are disclosed for carrier aggregation systems. A user equipment device may be configured to transmit uplink control information and other feedback for several downlink component carriers using one or more uplink component carriers. The user equipment device may be configured to transmit such data using a physical uplink control channel rather than a physical uplink shared channel. The user equipment device may be configured to determine the uplink control information and feedback data that is to be transmitted, the physical uplink control channel resources to be used to transmit the uplink control information and feedback data, and how the uplink control information and feedback data may be transmitted over the physical uplink control channel.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.

Abstract: A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.

Abstract: A fabricating method of a resistive random access memory unit with one-way conduction characteristic includes performing an initializing step, a forming step and a reverse resetting step. The initializing step includes providing the resistive random access memory unit. The forming step includes applying a setting voltage on a lower metal layer, and coupling an upper metal layer to a ground voltage to transform the resistive random access memory unit to a low resistive state. The reverse resetting step includes coupling the lower metal layer to the ground voltage and applying a resetting voltage to the upper metal layer to transform the resistive random access memory unit to a one-way conduction state. A forward reading current is greater than a reverse reading current, and the forward reading current is less than 3000 times of the reverse reading current.

Abstract: A wireless transmit/receive unit (WTRU) may send to a network node a registration request message requesting to register with the network and indicating that the WTRU is capable of preserving, when the WTRU becomes unavailable to the network, context information associated with the communications between the WTRU and the network. The network node may indicate in a registration accept message that the network supports the preservation of context information when the WTRU becomes unavailable to the network. Based on a determination that the WTRU will become unavailable to the network, the WTRU may send to the network a message indicating a request to preserve the context information. The message may comprise an indication of a time period during which the WTRU will be unavailable.

Abstract: Methods, devices, and systems for resource allocation are disclosed herein. Specifically, a wireless transmit receive unit (WTRU) may measure a reference signal received power (RSRP) level and a received signal strength indicator (RSSI) value of one or more resources in each of a plurality of patterns. The WTRU may exclude, from the selection, each pattern for which at least one resource in the pattern is reserved by another WTRU and has an RSRP greater than a threshold. On a condition that at least one of the plurality of patterns is not excluded, the WTRU may select a pattern with a lowest pattern RSSI value and a one or more resources satisfying a quality of service (QoS) requirement of data of the WTRU. The WTRU may then transmit the data of the WTRU using the selected pattern.

Abstract: A method and apparatus for use in a network device for transmitting requested information blocks is disclosed. A network device transmits a broadcast signal having configuration information, the configuration information indicating a group of preambles. Further, the network device receives, responsive to the configuration information, a transmission including a preamble from the group of preambles and a request message requesting one or more system information blocks (SIBs). Also, the network devices transmits a random access response (RAR) in response to the transmission. Moreover, the network devices transmits at least one of the requested one or more SIBs in response to the request message. In an example, the transmitted preamble or request message includes a control field that indicates additional SIB request information.

Abstract: Systems, procedures, and instrumentalities are disclosed for synchronizing a signal burst, signal design, and/or system frame acquisition. A synchronization signal (SS) block or burst may be received. The SS block or burst may include a primary synchronization signal (PSS), a secondary synchronization signal (SSS), and/or a Physical Broadcast Channel (PBCH). A first cell ID may be determined and/or a plurality of SSS sequences may be generated. An m0 value (e.g., a first cyclic shift) may be determined from a set of m0 values, for example, based on the generated plurality of SSS sequences. An n1 value (e.g., a second cyclic shift) may be determined from a set of n1 values. A second cell ID may be determined, for example, based on the m0 value and the n1 value. A third cell ID may be determined, for example, based on the second cell ID and the first cell ID.

Abstract: A hotel demand evaluation method includes setting a plurality of keywords, collecting a plurality of texts according to the plurality of keywords, selecting a plurality of valid texts from the plurality of texts, performing a semantic analysis operation to identify at least one time keyword and at least one location keyword in the plurality of valid texts, generating a classification result according to at least the at least one time keyword and the at least one location keyword, classifying each valid text of the plurality of valid texts into a positive impact group, a no impact group or a negative impact group according to the classification result, and generating a hotel demand score of a specific region according to at least one valid text of the positive impact group and/or at least one valid text of the negative impact group.

Abstract: A method may comprise receiving a first signal comprising first LDPC bits including systematic bits and parity bits and transmitting information indicating that the first signal was incorrectly received. A second signal comprising second LDPC bits may be received in response to the transmitting. The second signal may include LDPC bits according to a lifting size of an LDPC base graph.