Abstract: A method of a self-alignment process to enhance the yield of borderless contact is described. The method provides a two-step, selective etching process, using the difference in the etching selectivities of the inter-metal dielectric layer and the barrier layer. The barrier layer is used as an etching stop layer, and a portion of the inter-metal dielectric layer is removed to form a contact window. The barrier layer and the inter-metal dielectric layer on the bottom of the contact window are removed, and then a borderless contact according to the invention is complete.

Abstract: A fabrication method of a device isolation structure. A patterned mask layer is formed on a silicon substrate. A dopant is doped into an exposed substrate to prevent a bird's beak silicon region from being oxidized in a first doping step. A spacer is formed on the sidewall of the mask layer. Portions of the silicon substrate are removed to form a trench by using the mask layer and the spacer as a mask. A second dopant is doped into the exposed silicon substrate on the bottom of the trench to benefit the oxidation of a desired field oxide region in a second doping step. A field oxide layer is formed to fill the trench in a field oxide process.

Abstract: A method of forming a via. A stacked structure has a barrier layer and a metal line is formed over a substrate. Spacers capable of serving as a barrier are formed over tapering sidewalls of the stacked structure before vias and plugs are formed.

Abstract: An encode device, comprises a light source, an encode wheel and a light detector. A hollow dent is formed on the center part of the incident plane of the encode wheel. The inner circumference of the dent is provided with a ring-shaped lens such that the light impinging on the inner circumference of the dent is focused by the ring-shaped lens. The rim of the encode wheel is provided with a plurality of cylindrical lenses which are perpendicular to the ring-shaped lens such that the light leaving the encode wheel can be further focused. Therefore, the working beam projected toward the chip of the light detector has less interference.

Abstract: A method for forming a planar structure on a semiconductor substrate is disclosed. The method comprises the steps of: forming an interlayer dielectric atop said substrate; patterning and etching said interlayer dielectric, stopping at said substrate, to form a contact opening; forming a barrier metal layer on the bottom and sidewalls of said contact opening and atop said interlayer dielectric; depositing a conducting layer into said contact opening and atop said barrier metal layer; removing a portion of said conducting layer atop said barrier metal layer, leaving a plug in said contact opening; removing a portion of said barrier layer atop said interlayer dielectric; forming a cap barrier layer on exposed portions of said plug, said barrier metal layer, and said interlayer dielectric; and removing a portion of said cap barrier layer atop said plug.

Abstract: A method of fabricating an unlanded via. A substrate has a metal layer formed thereon and an ARC layer is formed on the metal layer. A liner dielectric layer is formed on the ARC layer and the sidewall of the metal layer, and an insulating material layer is formed on the insulating dielectric layer. The insulating material layer is then etched back, so a surface of the insulating material layer lower than the ARC layer surface is formed. Thereafter, a protective layer is formed on the insulating material layer and the metal layer, in which the protective layer is different from the liner dielectric layer. An IMD layer is formed on the protective layer. Using the liner dielectric layer as an etching stop layer, the IMD layer and the protective layer are patterned, and then the liner dielectric layer on the metal layer is removed, such that an unlanded via opening is formed.

Abstract: An alignment-marker structure and a method of forming the same in IC fabrication are provided. The alignment-marker structure is used for the purpose of assisting the precise alignment of a photomask used in photolithography on a wafer. In the fabrication process, a semiconductor substrate is prepared and then formed with a trench at a predefined location. A first conformal metallization layer is then formed over the substrate to a controlled thickness. Next, a sidewall-spacer structure is formed on the sidewall of the recessed portion of the first metallization layer. After this, a chemical-mechanical polishing (CMP) process is performed to polish away all the portions of the first metallization layer and the sidewall-spacer structure that lie over the top surface of the substrate. Finally, a second conformal metallization layer is formed over the substrate. Due to the conformal formation, the second metallization layer is formed with a recessed portion serving as the intended alignment mark.

Abstract: The present invention discloses a method, apparatus, and article of manufacture of an object-oriented tool for displaying, within one window of a monitor connected to a computer, both a graphical and textual trace of an object-oriented model during execution. The invention has three sections, an object/operation/argument selection section, a graphical trace section, and a textual trace section. The object selection section displays a list of all available objects. The graphical trace view displays a graphic of the objects passing operations back and forth. The textual trace displays a log of activity during execution.

Abstract: An air cleaner device is disposed beside an engine chamber. A connection pipe is connected to the engine chamber and the air cleaner device. The air cleaner device is adjacent to an accumulator. The air cleaner device has a lower box, an upper cover covering the lower box, four clamp devices disposed on four upper corners of the lower box, and a filter device disposed in the lower box. A connection pipe is connected to the upper cover. An air inlet pipe is connected to the lower box. An air activation block is disposed on the filter device. A large number of air passages are formed on the air activation block.

Abstract: This patent application discloses a new process for preparing the sintered article of aluminum nitride at low temperature. It comprises coating aluminum metal film on aluminum nitride powder, then directly molding or homogeneously cold pressing, followed by sintering at 1650.about.175O.degree. C., and finally forming dense aluminum nitride article.

Abstract: A sofabed which includes a first base frame serving as the seat of a sofa or the bed piece of a bed and defining a space for keeping pillows, quilts, etc., a second base frame retractably connected to the first base frame and moved between the retracted position received inside tile first base frame and the extended position to serve as the base frame of a second bed, a seat frame supported on the first base frame, a second seat frame pivoted to the first base frame and set at the desired angle to serve as the back of the sofa the bed piece of the second bed, and two armrest frames adjustably connected to the first base frame at two opposite ends.

Abstract: Apparatus for monitoring and displaying the status of a local area network. The network includes a hub with ports for connection to various data terminal equipment in a star configuration and for connection to other hubs of the network. The hubs each have different types of plug-in modules which have ports for connecting the hub to different types of network cable such as fiber optic cable, unshielded twisted pair cable and shielded twisted pair cable. Information is automatically provided to a control console identifying the types of modules and the location of the modules in the hub so that an image of the actual hub can be displayed on the screen of the control console. The actual hub image shows the location and types of modules installed in the hub. In addition, information regarding the connection of each of the hubs to other hubs of the network is obtained and provided to the control console.

Abstract: A method for forming a metal contact in a self aligned contact region over a impurity region in a substrate which comprises forming a doped polysilicon layer over the device surface except in a contact area. A thin polysilicon barrier layer and a metal layer, preferably tungsten, are then formed over the polysilicon layer and the contact area. The resulting metal contact has superior step coverage, lower resistivity, and maintains the shallow junction depth of buried impurity regions.

Abstract: A manual/automatic operation interchangeable connecting seat of ball valve is disclosed. The connecting seat is formed with a central shaft hole through which a controlling lever of a ball valve body extends. Two ear sections are formed on two sides of the connecting seat. Each of the ear section has a central through hole corresponding to a connecting hole of a top flange of the ball valve body. A thread rod goes through the through hole of the ear section and the connecting hole of the top flange to secure the concectins seat on the ball valve body and seal the same. Each ear section has two wing portions on two sides thereof and each wing portion has an opening for engaging a driver with the connecting seat in automatic operation mode of the ball valve, whereby the controlling lever can be associated with a grip in manual operation mode of the ball valve or alternatively associated with a driver to change the manual operation mode into automatic operation mode of the ball valve.

Abstract: Disclosed is a process for producing an ultrafine powder of aluminum nitride. This process is characterized in adding 1-5 wt % of aluminum nitride powder to the mixture of alumina and carbon black and heating the resulting powder mixture at a temperature of 1550.degree.-1650.degree. C. in an atmosphere of nitrogen. Preferably, prior to heating, the powder mixture is shaped into a compact. The aluminum nitride powder prepared by the process of the present invention has an average particle diameter of about 0.45 micron and a purity of above 98.1%, and is therefore a very suitable material for making printed circuit boards and heat release boards for IC, LSI and VLSI.