Abstract: The present invention relates to a driving method for a modular multi-level converter. The driving method include inputting a current reference value (i*pj2) of the upper valve of the modular multi-level converter, measuring a current value (ipj2) of the valve, calculating an error value (errpj2) between the current reference value and the measured current value of the upper valve, measuring a DC link voltage value (Vdc2) of the modular multi-level converter, measuring a AC-grid voltage value (Esj) of the modular multi-level converter, and calculating a voltage reference value (u*pj2) using the current reference value (i*pj2), the measured current value (ipj2), the error value (errpj2), the DC link voltage value (Vdc2), and the AC-grid voltage value (Esj).

Abstract: A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

Abstract: A semiconductor device includes an active region including a surface region and a first recess formed on both sides of the surface region, the active region extending along a first direction; a device isolation structure surrounding the active region; a pair of gate lines extending along the surface region of the active region in a second direction perpendicular to the first direction; a plurality of second recesses formed in the device isolation structure beneath the gate lines and including given portions of the gate lines filled into the second recesses; a plurality of first junction regions formed in the active region beneath the first recesses; and a second junction region formed in the surface region between the gate lines, wherein the second junction region defines at least two vertical-type channels below the gate line with the plurality of first junction regions.

Abstract: A molded article for an automobile is formed using a thermoplastic resin composition including (A) about 1 to about 20 wt % of a first rubber-modified acrylic-based graft copolymer having an average particle diameter of greater than or equal to about 100 nm and less than about 200 nm, (B) about 1 to about 20 wt % of a second rubber-modified acrylic-based graft copolymer having an average particle diameter of greater than or equal to about 200 nm and less than or equal to about 400 nm, (C) about 5 to about 40 wt % of a first vinyl-based copolymer of an alkyl(meth)acrylate monomer, an aromatic vinyl monomer, and an unsaturated nitrile monomer wherein the alkyl(meth)acrylate monomer is included in an amount of greater than or equal to about 50 wt %, and (D) about 50 to about 85 wt % of a polycarbonate resin, wherein the molded article is a radiator grill or an outside mirror housing.

Abstract: The present invention relates to a polycarbonate-polysiloxane copolymer containing a polysiloxane unit. The polycarbonate-polysiloxane copolymer of the present invention includes an aliphatic terminal having a specific carbon number, thereby having excellent impact properties at low temperature, and high transparency.

Abstract: The present invention relates to a ruthenium compound including a specific ligand structure of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene or isoprene and having superior thermal stability, vaporizing property and step coverage, and a thin film deposited using same.

Abstract: Provided is a system and method for performing an auto scroll. The system for performing the auto scroll may include an auto scroll determination unit to determine whether to perform the auto scroll on a page, an auto scroll performing unit to perform the auto scroll on the page so that a main text of the page may be obtained with focus, and a page providing unit to output the auto scrolled page. According to exemplary embodiments of the present invention, even though a user does not manually scroll to data of the page to be viewed, the data of the page may automatically be scrolled so that the data may be obtained with focus.

Abstract: A steering system of an automobile may include a mounting bracket having a flange portion supporting a steering column and contacting with an automobile body, and an opening hole formed at the flange portion and opening toward one side of the flange portion, a capsule slidably coupled to the opening hole and adapted to be decoupled from the opening hole when an impact is given thereto, and at least one molded supporter fixing the capsule and the flange portion and adapted to be sheared off from the capsule or the flange portion when the impact is given thereto.

Abstract: A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

Abstract: Provided is a method for suppressing a circulating current in a modular multi-level converter for a high voltage direction-current (HVDC) transmission system. The HVDC transmission system converts an alternating current (AC) into a direct current (DC) and vice versa, transmits energy using a DC cable, and including a modular multilevel converter generating a high voltage source by stacking a plurality of sub-modules in series. In the circulating current suppression method, a circulating current (idiffj; j=a,b,c) of a,b,c phase in an abc 3-phase stationary reference frame, a DC current (idc) flowing in a DC cable, a current reference value (i*dc) of a DC component that needs to flow in the DC cable are inputted. The circulating current (idiffj) of the a,b,c phase is controlled to become zero. A compensation value (V*diffj) for suppressing a harmonic component of the circulating current is outputted.

Abstract: A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

Abstract: A direct conversion receiver includes: a high linearity mixer device including a sampler unit charge-sampling an input current according to a sampling frequency, and a buffer unit receiving an output signal from the sampler unit while having a low input impedance, amplifying the received signal, and outputting a current signal; and a filter device decimating an output signal from the mixer device and FIR-filtering the decimated signal.

Abstract: A flat panel display includes; a first substrate, a white reflective layer disposed on the first substrate, a pixel electrode disposed on the white reflective, a second substrate disposed facing the first substrate, a common electrode disposed on the second substrate, and an electrooptic layer disposed between the pixel electrode and the common electrode, wherein the white reflective layer includes at least one of TiO2 and BaSO4.

Abstract: The present invention relates to a control device for a doubly-fed induction generator in which a feedback linearization method is enabled and further provides a control device for a doubly-fed induction generator in which a feedback linearization method is embedded, characterized in that the control device divides and measures positive sequency components and negative sequency components from stator voltage and current, rotor voltage and current, and signals of stator magnetic flux and rotor magnetic flux of the doubly-fed induction generator.

Abstract: A semiconductor device includes an active region including a surface region and a first recess formed on both sides of the surface region, the active region extending along a first direction; a device isolation structure surrounding the active region; a pair of gate lines extending along the surface region of the active region in a second direction perpendicular to the first direction; a plurality of second recesses formed in the device isolation structure beneath the gate lines and including given portions of the gate lines filled into the second recesses; a plurality of first junction regions formed in the active region beneath the first recesses; and a second junction region formed in the surface region between the gate lines, wherein the second junction region defines at least two vertical-type channels below the gate line with the plurality of first junction regions.

Abstract: A method for fabricating a semiconductor substrate includes defining an active region by forming a device isolation layer over the substrate, forming a first trench dividing the active region into a first active region and a second active region, forming a buried bit line filling a portion of the first trench, forming a gap-filling layer gap-filling an upper portion of the first trench over the buried bit line, forming second trenches by etching the gap-filling layer and the device isolation layer in a direction crossing the buried bit line, and forming a first buried word line and a second buried word line filling the second trenches, wherein the first buried word line and the second buried word line are shaped around sidewalls of the first active region and the second active region, respectively.

Abstract: A method for fabricating a semiconductor device includes forming a first insulation layer over a bottom layer, selectively removing a portion the first insulation layer to form a first trench that exposes the bottom layer, forming spacers on inner sidewalls of the first trench; forming a pillar-shaped second insulation layer in the first trench between the spacers, removing the spacers to form a second trench between the pillar-shaped second insulation layer and the first insulation layer, and burying a conductive layer in the second trench.

Abstract: A semiconductor device includes an active region including a surface region and a first recess formed below the surface region, the active region extending along a first direction; a device isolation structure provided on an edge of the active region; a gate line traversing over the surface region of the active region along a second direction orthogonal to the first direction; a second recess formed in the device isolation structure to receive a given portion of the gate line into the second recess; a first junction region formed in the active region beneath the first recess and on a first side of the gate line; and a second junction region formed on a second side of the gate line and above the first junction region. The first and second junction regions define a vertical-type channel that extends along lateral and vertical directions.

Abstract: A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

Abstract: Disclosed are a protected alcohol or derivative thereof, a surface-modified organic-inorganic hybrid glass, and preparation methods thereof. More specifically, disclosed are a protected alcohol or derivative thereof and a surface-modified organic-inorganic hybrid glass, which are prepared by allowing a silane compound, having vinyl or a vinyl derivative, to react with an alcohol or derivative thereof or with an organic-inorganic hybrid glass, in the presence of an acid catalyst, a transition metal catalyst and an organic solvent, so as to introduce an organic group thereto even at room temperature, as well as preparation methods thereof. The disclosed invention allows a functional group to be effectively introduced into alcohol or a derivative thereof or into an organic-inorganic hybrid glass, not only high temperatures but also room temperature, and thus is highly effective in introducing compounds having a thermally sensitive functional group, for example, natural compounds or proteins.