Abstract: A semiconductor device includes a buffer layer made of nitride semiconductor on a substrate, a first semiconductor layer made of nitride semiconductor on the buffer layer, a second semiconductor layer made of nitride semiconductor on the first semiconductor layer, and a gate electrode, a source electrode, and a drain electrode formed on the second semiconductor layer, wherein the buffer layer has elements doped therein that include both an element selected from a group consisting of C, Mg, Fe, and Co and an element selected from a group consisting of Si, Ge, Sn, and O.

Abstract: A semiconductor device includes a superlattice buffer layer formed on a substrate. A first semiconductor layer is formed by a nitride semiconductor on the superlattice buffer layer. A second semiconductor layer is formed by a nitride semiconductor on the first semiconductor layer. A gate electrode, a source electrode and a drain electrode are formed on the second semiconductor layer. The superlattice buffer layer is forced by alternately and periodically laminating a first superlattice formation layer, and a second superlattice formation layer. The first super lattice formation layer is formed by AlxGa1-xN and the second superlattice formation layer is formed by AlyGa1-yN, where a relationship x>y is satisfied. A concentration of an impurity element serving as an acceptor doped into a portion or a whole of the second super lattice formation layer is higher than a concentration of the impurity element serving as an acceptor, doped into the first superlattice formation layer.

Abstract: A display apparatus includes a USB connector used to connect an external device so as to be able to communicate with that device. The display apparatus also includes a CPU which controls to make a display based on data received from the external device with which a communication connection is established via the USB connector. The CPU acquires class information indicating a class of the external device, the communication connection of which is established. When the communication connection with the external device is disconnected, if the acquired class information indicates a predetermined class, the CPU controls to continue the display based on the received data, and if the class information does not indicate the predetermined class, the CPU controls to end the display.

Abstract: A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of AlGaN and doped with Fe, the buffer layer includes a plurality of layers having different Al component ratios from each other, and the Al component ratio of a first layer is greater than the Al component ratio of a second layer and a Fe concentration of the first layer is less than the Fe concentration of the second layer, the first and second layers being included in the plurality of layers, and the first layer being formed on a substrate side of the second layer.

Abstract: A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a third semiconductor layer and a fourth semiconductor layer formed on the second semiconductor layer, a gate electrode formed on the third semiconductor layer, and a source electrode and a drain electrode contacting and formed on the fourth semiconductor layer, wherein the third semiconductor layer is formed of a semiconductor material for attaining p-type on an area just under the gate electrode, and a concentration of silicon in the fourth semiconductor layer is higher than that in the second semiconductor layer.

Abstract: A method of manufacturing a semiconductor crystal substrate, includes forming a nitride layer by supplying a gas including a nitrogen component to a substrate formed of a material including silicon and nitriding a surface of the substrate; and forming an AlN layer on the nitride layer by supplying the gas including the nitrogen component and a source gas including Al.

Abstract: A display apparatus according to this invention performs control so as to reduce the difference between image data input to a display unit and an image which is displayed on a display surface and acquired by an acquisition unit, based on the image data and the image.

Abstract: A compound semiconductor device includes: a compound semiconductor multilayer structure including a first buffer layer composed of AlN; and a second buffer layer composed of AlGaN and formed above the first buffer layer, wherein the second buffer layer contains carbon, and wherein the concentration of carbon in the second buffer layer increases with increasing distance from a lower surface of the second buffer layer toward an upper surface of the second buffer layer.

Abstract: A compound semiconductor device includes: a substrate; a GaN compound semiconductor multilayer structure disposed over the substrate; and a stress relief layer which is AlN-based and which is disposed between the substrate and the GaN compound semiconductor multilayer structure, wherein a surface of the stress relief layer that is in contact with the GaN compound semiconductor multilayer structure includes recesses that have a depth of 5 nm or more and that are formed at a number density of 2×1010 cm?2 or more.

Abstract: An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure formed over the substrate; and a gate electrode, a source electrode and a drain electrode formed on or above the compound semiconductor stacked structure. The compound semiconductor stacked structure includes: an electron channel layer; and a nitride semiconductor layer which includes an electron supply layer formed over the electron channel layer. An indium (In) fraction at a surface of the nitride semiconductor layer in each of a region between the gate electrode and the source electrode and a region between the gate electrode and the drain electrode is lower than an indium (In) fraction at a surface of the nitride semiconductor layer in a region below the gate electrode.

Abstract: A projection system includes a plurality of projection apparatuses. Each of the plurality of projection apparatuses includes a projection unit configured to project an image onto a projection surface, and an adjusting unit configured to adjust a state of displaying an image projected onto the projection surface by the projection unit. The projection system further includes a controller configured to cause the projection units of the plurality of projection apparatuses to simultaneously project a test image in different forms. The controller controls the adjusting unit of the plurality of projection apparatuses to adjust a state of displaying an image projected on the projection surface by the projection unit based on each state of displaying of the test images in different forms.

Abstract: A compound semiconductor device includes a substrate; a buffer layer formed on the substrate; an electron transit layer and an electron donating layer formed on the buffer layer; a gate electrode, a source electrode, and a drain electrode formed on the electron donating layer; and an embedded electrode to which a potential independent of the gate electrode, the source electrode, and the drain electrode is supplied to control a potential of the buffer layer.

Abstract: The focus position of each projection apparatus is changed depending on the configuration state of a projection system comprising a plurality of projection apparatuses.

Abstract: A semiconductor device includes: a first semiconductor layer formed on a substrate; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; a gate electrode formed on the third semiconductor layer; and a source electrode and a drain electrode formed in contact with the second semiconductor layer, wherein a semiconductor material of the third semiconductor layer is doped with a p-type impurity element; and the third semiconductor layer has a jutting out region that juts out beyond an edge of the gate electrode toward a side where the drain electrode is provided.

Abstract: An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure formed over the substrate; and a gate electrode, a source electrode and a drain electrode formed on or above the compound semiconductor stacked structure. The compound semiconductor stacked structure includes: an electron channel layer; and a nitride semiconductor layer which includes an electron supply layer formed over the electron channel layer. An indium (In) fraction at a surface of the nitride semiconductor layer in each of a region between the gate electrode and the source electrode and a region between the gate electrode and the drain electrode is lower than an indium (In) fraction at a surface of the nitride semiconductor layer in a region below the gate electrode.

Abstract: A compound semiconductor device includes: a substrate; a GaN compound semiconductor multilayer structure disposed over the substrate; and a stress relief layer which is AlN-based and which is disposed between the substrate and the GaN compound semiconductor multilayer structure, wherein a surface of the stress relief layer that is in contact with the GaN compound semiconductor multilayer structure includes recesses that have a depth of 5 nm or more and that are formed at a number density of 2×1010 cm?2 or more.

Abstract: A display apparatus includes a communication unit configured to communicate with an external device, a display unit configured to display an image received from the external device, and a storing unit configured to store information for controlling whether or not to continue the display of the image being displayed by the display unit when the communication is disconnected. In addition, a determination unit determines whether or not to continue the display of the image received from the external device by comparing the type of the external device involving the communication by the communication unit with the information stored in the storing unit, and a control unit controls whether or not to continue the display of the image being displayed by the display unit when the communication is disconnected, in accordance with the determination.

Abstract: A display apparatus includes a communication unit configured to communicate with an external device, a display unit configured to display an image received from the external device, and a storing unit configured to store information for controlling whether or not to continue the display of the image being displayed by the display unit when the communication is disconnected. In addition, a determination unit determines whether or not to continue the display of the image received from the external device by comparing the type of the external device involving the communication by the communication unit with the information stored in the storing unit, and a control unit controls whether or not to continue the display of the image being displayed by the display unit when the communication is disconnected, in accordance with the determination.

Abstract: A projection system includes a plurality of projection apparatuses. Each of the plurality of projection apparatuses includes a projection unit configured to project an image onto a projection surface, and an adjusting unit configured to adjust a state of displaying an image projected onto the projection surface by the projection unit. The projection system further includes a controller configured to cause the projection units of the plurality of projection apparatuses to simultaneously project a test image in different forms. The controller controls the adjusting unit of the plurality of projection apparatuses to adjust a state of displaying an image projected on the projection surface by the projection unit based on each state of displaying of the test images in different forms.

Abstract: When a communication connection with a device is disconnected during execution of a display based on data transmitted from the connected device, it can be controlled to continue or end the display according to a class of the device. A display apparatus 1 includes a USB connector 102 used to connect an external device so as to be able to communicate with that device. The display apparatus 1 also includes a CPU 107 which controls to make a display based on data received from the external device with which a communication connection is established via the USB connector 102. The CPU 107 acquires class information indicating a class of the external device, the communication connection of which is established.