Abstract: A plurality of slide access memories (SM.sub.00, SM.sub.01, . . . , SM.sub.n-1, m-1), in which a voluntary rectangular group of bits can be accessed, are arranged in an n-rows and m-columns matrix and connected to common data lines (D.sub.0, D.sub.1, . . . , D.sub.15). A first access means accesses the same rectangular group of bits in each of the slide access memories and interconnects these groups to input/output portions incorporated into each of the slide access memories. A second access means selects the input/output portions of each of the slide access memories to enable or disable the operation thereof in accordance with a special bit position, or a pointing bit (PB) position, to thereby connect only a desired group of bits to common data lines, and thus enlarge the scope of slide access memories.

Abstract: An improved semiconductor memory device provided with an address scramble unit in addition to a multidirection data selection unit. The address scramble unit converts an external address having an addressing linearity regardless of a complex multidirection data selection into an internal address used by the multidirection data selection unit. A plurality of memory cells are connected between a plurality of word lines and a plurality of bit lines to form a logical space; a plurality of boundaries being defined in a direction thereof. Each boundary includes a plurality of segments each defining a plurality of simultaneously accessible bit data. The multidirection data selection unit outputs a data in response to a segment designation address a direction signal and a segment internal address, from a boundary data selected by a row address.

Abstract: An entire chip is divided into N blocks (N=n.times.m) in accordance with a desired rectangular group of bits (n.times.m bits). The same row decoder is provided for every m blocks, and a row address A.sub.R or a row address A.sub.R+1 adjacent thereto is given to the row decoders. Similarly, the same column decoder is provided for every m blocks, and a column address A.sub.C or a column address A.sub.C +1 adjacent thereto is given to the column decoders. N bits of memory cells are accessed from the blocks, and the accessed memory cells are rearranged, thereby obtaining a desired rectangular group of bits.

Abstract: A video random access memory (Video RAM) having a plurality of RAM and shift register sets, the RAM being randomly accessed and the shift register being serially accessed, each RAM and shift register being connected by transfer gates in order to transfer read/write data. The Video RAM comprising; an input/output circuit operatively connected to the shift register and switched from an input side to an output side or from an output side to an input side in response to a direction of data transfer between the RAM and the shift register, and a transfer control circuit for controlling the switching of the input/output circuit and the controlling the direction of data transfer based on predetermined modes of the input signals.

Abstract: A semiconductor memory device including a RAM portion and a shift register for enabling parallel transfer of a one word line amount of data of the RAM portion between the RAM portion and the shift register. The shift register is divided into a plurality of shift register portions with serial input data being distributed alternately between the shift register portions by the operation of a multiplexer and serial output data being obtained by picking up data alternately from the shift register portions by the operation of another multiplexer. A transfer gate portion is inserted between the RAM portion and the shift register for carrying out parallel transfer, the transfer gate portion includes a plurality of groups of transfer gates for enabling selective connections of input and output terminals of each of the stages of the shift register portions with either of the adjacent odd numbered bit line and even numbered bit line of the RAM portion.

Abstract: A dual-port type semiconductor memory device having a serial data input and output circuit (200) provided outside of a memory cell array (1) and operable for high-speed serial data input and output of data in addition to random data access. The semiconductor memory device includes a single decoding circuit (5) triggering at least one gate for transferring data to be stored into or read from the memory cell array in a random data access mode and setting a single bit into a corresponding shift register (24) in the serial data input and output circuit in a serial data input and output operation mode. Preferably, the decoding circuit is operated only during a time for operatively connecting bit lines and latch circuits in the serial data input and output circuit in the serial data input and output operation mode.

Abstract: A semiconductor integrated circuit including a memory unit for storing address information of a failed circuit portion and for replacing the failed circuit portion by a redundant circuit portion. The semiconductor integrated circuit provides a comparison unit for detecting coincidence between data read from the memory unit and a received input address. Data produced from the comparison by the comparison unit is delivered through an external connection terminal.

Abstract: A telescopic arm for use in civil engineering machines, in which guide rails extended axially are disposed while being protruded outwardly on both lateral sides of a base arm which is pivoted to the boom of a civil engineering machine main body, guide grooves each concaved inwardly in a U-cross sectional shape are formed axially on both lateral sides of the slide arm which moves along the axial direction of the base arm, slide blocks disposed on both lateral sides at the forward end of the base arm are in a slidable fitting engagement into the guide grooves of the slide arm, while slide blocks of a U-cross sectioned concaved shaped disposed on both lateral sides at the rearward end of the slide arm are in a slidable fitting engagement with the rails of the base arm.

Abstract: A semiconductor memory device with shift registers used for a video RAM, including a memory cell array, bit lines, and word lines, a pair of shift registers, and transfer gate circuits arranged between the bit lines and the shift registers. Each parallel data transfer circuit is provided between the shift registers for transferring parallel data between the shift registers, so that high-speed reading and writing of data for a CRT display is realized.

Abstract: A semiconductor memory device having a read-modify-write (RMW) configuration suitable for modifying a large number of data with high speed and a simple circuit. The RMW configuration includes a data input and output circuit (11, 14, 16) for simultaneously storing or reading a plurality of data into or from the memory cells, a data output circuit (10, 12, 13) for serially reading a plurality of data from the memory cells, and data modification circuits (15) for successively receiving the plurality of data from the data output circuit, modifying the received data if necessary and transmitting the modified data to the data input and output circuit.

Abstract: A semiconductor memory device including a memory cell array 1, a serial data input circuit for high-speed, large data store in memory cells and a serial data output circuit for high-speed, large data read-out from the memory cells. The serial data input circuit includes a plurality of shift registers 15, for consecutively storing serial input data S.sub.IN applied from an external circuit, and a plurality of first gates 14, for operatively and simultaneously connnecting the shift registers and a plurality of bit lines BL of the memory cell array to store simultaneously the serial input data stored in the shift registers into desired memory cells selected by a desired word line.

Abstract: A semiconductor memory device in the form of a shift register is supplied with two-phase clock signals. One of the two-phase clock signal lines is connected to even order shift register elements of the shift register, and the other of the two-phase clock signal lines is connected to odd order shift register elements of the shift register. Each of the shift register elements includes an output node, a gate connected between the output node and a clock signal supplying node, a charge-up circuit responsive to the output signal of the preceding shift register element for preliminarily charging a control node of the gate, and a discharge circuit responsive to the output of the succeeding shift register element for releasing the charge of the control node of the gate.

Abstract: A device connected between first and second voltage feed lines includes an information storing circuit having a fuse for storing information by blowing or not blowing the fuse, a voltage level conversion circuit connected to at least one of the first and second voltage feed lines and outputting a voltage lower than a voltage between the first and second voltage feed lines to the information storing circuit, and a circuit connected between the first and second voltage feed lines, for outputting a detection signal in response to a voltage value at the fuse in the information storing circuit to which the voltage is applied from the voltage level conversion circuit and which voltage value is varied with the blown or unblown state of the fuse.

Abstract: A semiconductor memory device includes a random-access memory which has at least one redundancy column for replacing a defective column; a serial output circuit receives data read out in parallel from the random-access memory and serially outputs the received data redundancy circuit replaces data of the defective column with data from the redundancy column.

Abstract: A semiconductor memory device including a random access memory cell array, a series/parallel data transfer circuit, transfer gate, an active pull-up circuit, and an active pull-down circuit. The transfer gate is inserted between bit lines of the random access memory cell array and the series/parallel data transfer circuit to carry out parallel transfer of data. Output data of the series/parallel data transfer circuit is simultaneously written in a group of memory cells of selected work lines by turning on the transfer gate and selection of a word line. When data of each output of steps of the series/parallel data transfer circuit is logic "1", the active pull-up circuit charges up a selected bit line of the random access memory cell array. When data of each output of steps of the series/parallel data transfer circuit is logic "0", the active pull-down circuit discharges a selected bit line of the random access memory cell array.

Abstract: A circuit for storing information by blown and unblown fuses has at least two fuses per bit and an information output circuit. The information output circuit discriminates between the state in which all the fuses are unblown and the state in which at least one of the fuses is blown, and provides an output in accordance with the result of the discrimination as stored information.

Abstract: A semiconductor integrated circuit which includes therein at least one inspection circuit for inspecting a voltage level produced at an internal node to be inspected. The inspection circuit has at least a control signal input portion connected to the internal node to be inspected and an input part connected to an external input/output pin. The inspection circuit includes a series-connected transistor and diode connected between a power source and the input portion, a capacitor connected between a gate of the transistor and the input portion, and a transfer gate transistor connected between the control signal input portion and the gate of the transistor. The inspection circuit discriminates the level at the internal node according to a flow or nonflow of a current, via the external input/output pin, when a particular signal having a voltage level higher than the power source level is supplied to the external input/output pin.

Abstract: An MIS transistor circuit which is operated alternately in a reset state and in an active state, comprises a voltage holding circuit for holding a power supply voltage applied in each reset state so as to provide a clamped voltage. The clamped voltage is applied during each active state to the desired nodes of the MIS transistor circuit as an actual power supply voltage, whereby error operation due to voltage fluctuation of the power supply voltage is prevented.

Abstract: A dynamic semiconductor memory device of an open bit-line type includes a plurality of first wiring lines running on common opposite electrodes for forming opposite electrodes of memory cell capacitors and connected to the common opposite electrodes at a number of contact points. A second wiring line is connected to the ends of the first wiring lines and to a voltage supply line at the center point of the second wiring line, so that the potential distribution of the common opposite electrodes can be equalized precisely.

Abstract: A grapple attachment for log loader of a type in which a main frame comprises a pair of tines integrally joined to and extended forwardly from both lateral ends at the bottom thereof and a pair of clamp arms each pivoted on both lateral ends at the top thereof and driven vertically rotatably by a hydraulic cylinder and piston means, is improved according to this invention in that the main frame comprises a pair of support posts disposed on both lateral ends thereof and a beam assembly generally of an X-shaped configuration disposed between the support posts for connecting the same. The X-shaped beam may be of a hollow structure reinforced with web members such as lattice bars integrally secured to the inside of the hollow beam.