Abstract: Provided is a cooling module to which a microporous cooling structure is applied, and a method of locally and conformally cooling a mold using the same. The cooling module to which a microporous cooling structure is applied which is installed at each high temperature region inside a mold core and allows supplied cooling fluid to flow thereinto to perform local and conformal cooling on a mold may include a body part inserted into the mold core, a microporous cooling structure which is inserted into an upper portion of the body part and in which micro unit cells are periodically and repeatedly formed to form a plurality of connected hollow portions, and a cooling channel including a conduit configured to pass the cooling fluid through the microporous cooling structure.

Abstract: A semiconductor device may include a bottom sub-electrode on a substrate, a top sub-electrode on the bottom sub-electrode, a dielectric layer covering the bottom and top sub-electrodes, and a plate electrode on the dielectric layer. The top sub-electrode may include a step extending from a side surface thereof, which is adjacent to the bottom sub-electrode, to an inner portion of the top sub-electrode. The top sub-electrode may include a lower portion at a level that is lower than the step and an upper portion at a level which is higher than the step. A maximum width of the lower portion may be narrower than a minimum width of the upper portion. The maximum width of the lower portion may be narrower than a width of a top end of the bottom sub-electrode. The bottom sub-electrode may include a recess in a region adjacent to the top sub-electrode.

Abstract: Disclosed is a cover for a foldable electronic device. The cover includes: a first cover portion configured to be coupled to a first housing of the electronic device, a second cover portion configured to be coupled to a second housing of the electronic device, a connecting portion provided between the first cover portion and the second cover portion and extending in a first direction, the connecting portion being configured such that the first cover portion and the second cover portion are folded to be superimposed on each other or are unfolded, and a pen holder configured to at least partially accommodate a pen and mounted on the connecting portion to be detachable.

Abstract: To manufacture an integrated circuit (IC) device, a lower structure having a step structure defining a trench is prepared. A material film is formed inside the trench. To form a material film, a first precursor including a first central element and a first ligand having a first size is supplied onto a lower structure to form a first chemisorbed layer of the first precursor on the lower structure. A second precursor including a second central element and a second ligand having a second size less than the first size is supplied onto a resultant structure including the first chemisorbed layer to form a second chemisorbed layer of the second precursor on the lower structure. A reactive gas is supplied to the first chemisorbed layer and the second chemisorbed layer.

Abstract: An apparatus for and method of sensing alignment marks in which a self-referencing interferometer based sensor outputs standing images of the alignment marks and camera device is used to capture the images as output by the sensor and a detector is used to obtain phase information about the alignment marks from the images as output by the sensor.

Abstract: A semiconductor device may include a bottom sub-electrode on a substrate, a top sub-electrode on the bottom sub-electrode, a dielectric layer covering the bottom and top sub-electrodes, and a plate electrode on the dielectric layer. The top sub-electrode may include a step extending from a side surface thereof, which is adjacent to the bottom sub-electrode, to an inner portion of the top sub-electrode. The top sub-electrode may include a lower portion at a level that is lower than the step and an upper portion at a level which is higher than the step. A maximum width of the lower portion may be narrower than a minimum width of the upper portion. The maximum width of the lower portion may be narrower than a width of a top end of the bottom sub-electrode. The bottom sub-electrode may include a recess in a region adjacent to the top sub-electrode.

Abstract: An electronic device is provided. The electronic device includes a communication module which can communicate with an electronic pen, and a processor, wherein the processor may determine the state of the electronic device, determine the state of the electronic pen, and, when the state of the electronic pen is determined that the electronic pen is attached to the electronic device and an input from the electronic pen is received through the communication module, perform a function related to the electronic pen based on the determined state of the electronic device.

Abstract: A semiconductor device includes an active pattern on a substrate, a gate structure buried at an upper portion of the active pattern, a bit line structure on the active pattern, a spacer structure on a sidewall of the bit line structure, a contact plug structure contacting the spacer structure, an insulating interlayer structure partially penetrating through upper portions of the contact plug structure, the spacer structure and the bit line structure, and a capacitor on the contact plug structure. The spacer structure includes an air spacer including air. The insulating interlayer structure includes first and second insulating interlayers. The second insulating interlayer may include an insulation material different from that of the first insulating interlayer. A lower surface of the second insulating interlayer covers a top of the air spacer, and a lowermost surface of the first insulating interlayer is covered by the second insulating interlayer.

Abstract: A semiconductor device may include a bottom sub-electrode on a substrate, a top sub-electrode on the bottom sub-electrode, a dielectric layer covering the bottom and top sub-electrodes, and a plate electrode on the dielectric layer. The top sub-electrode may include a step extending from a side surface thereof, which is adjacent to the bottom sub-electrode, to an inner portion of the top sub-electrode. The top sub-electrode may include a lower portion at a level that is lower than the step and an upper portion at a level which is higher than the step. A maximum width of the lower portion may be narrower than a minimum width of the upper portion. The maximum width of the lower portion may be narrower than a width of a top end of the bottom sub-electrode. The bottom sub-electrode may include a recess in a region adjacent to the top sub-electrode.

Abstract: Provided are a radical monitoring apparatus capable of monitoring electrical diagnosis of a radical produced by direct plasma or remote plasma and the amount of change of the produced radical, and a plasma apparatus including the radical monitoring apparatus. The plasma apparatus includes a process chamber in which a plasma process is performed, a dielectric film in the process chamber and surrounding sides of a plasma discharge space in the process chamber, and a sensor inside the dielectric film and configured to monitor plasma to thereby monitor a radical generated in the plasma.

Abstract: An electronic device is provided.

Abstract: The present invention provides a novel method for preparing high-purity gadobutrol or hydrates thereof. The preparation method of the present invention can have an advantage of simplifying a process by forming a gadolinium complex in-situ without purification of a butrol intermediate and omitting a resin purification process unlike a conventional method for synthesizing gadobutrol. In addition, the preparation method of the present invention can be used to produce high-purity gadobutrol or hydrates thereof at a high yield only through the simple process as above, and thus can be useful in mass production.

Abstract: A semiconductor device may include a bottom sub-electrode on a substrate, a top sub-electrode on the bottom sub-electrode, a dielectric layer covering the bottom and top sub-electrodes, and a plate electrode on the dielectric layer. The top sub-electrode may include a step extending from a side surface thereof, which is adjacent to the bottom sub-electrode, to an inner portion of the top sub-electrode. The top sub-electrode may include a lower portion at a level that is lower than the step and an upper portion at a level which is higher than the step. A maximum width of the lower portion may be narrower than a minimum width of the upper portion. The maximum width of the lower portion may be narrower than a width of a top end of the bottom sub-electrode. The bottom sub-electrode may include a recess in a region adjacent to the top sub-electrode.

Abstract: To manufacture an integrated circuit (IC) device, a lower structure having a step structure defining a trench is prepared. A material film is formed inside the trench. To form a material film, a first precursor including a first central element and a first ligand having a first size is supplied onto a lower structure to form a first chemisorbed layer of the first precursor on the lower structure. A second precursor including a second central element and a second ligand having a second size less than the first size is supplied onto a resultant structure including the first chemisorbed layer to form a second chemisorbed layer of the second precursor on the lower structure. A reactive gas is supplied to the first chemisorbed layer and the second chemisorbed layer.

Abstract: A method and an electronic device are provided, which attach or detaches two displays by magnetism. The electronic device includes a first housing including a first display exposed through a surface of the first housing, and a first cylindrical magnet disposed in a side of the first housing; and a second housing including a second display exposed through a surface of the second housing, and a second cylindrical magnet disposed in a side end of the second housing. At least one of the first cylindrical magnet and second cylindrical magnet is configured to rotate within the first housing and the second housing, respectively, by magnetic attraction of the first cylindrical magnet and second cylindrical magnet being adjacent to each other. The first housing and the second housing are coupled to each other by the magnetic attraction of the first cylindrical magnet and the second cylindrical magnet.

Abstract: Provided are a radical monitoring apparatus capable of monitoring electrical diagnosis of a radical produced by direct plasma or remote plasma and the amount of change of the produced radical, and a plasma apparatus including the radical monitoring apparatus. The plasma apparatus includes a process chamber in which a plasma process is performed, a dielectric film in the process chamber and surrounding sides of a plasma discharge space in the process chamber, and a sensor inside the dielectric film and configured to monitor plasma to thereby monitor a radical generated in the plasma.

Abstract: A method and an electronic device are provided, which attach or detaches two displays by magnetism. The electronic device includes a first housing including a first display exposed through a surface of the first housing, and a first cylindrical magnet disposed in a side of the first housing; and a second housing including a second display exposed through a surface of the second housing, and a second cylindrical magnet disposed in a side end of the second housing. At least one of the first cylindrical magnet and second cylindrical magnet is configured to rotate within the first housing and the second housing, respectively, by magnetic attraction of the first cylindrical magnet and second cylindrical magnet being adjacent to each other. The first housing and the second housing are coupled to each other by the magnetic attraction of the first cylindrical magnet and the second cylindrical magnet.