Patents by Inventor Junya Maruyama

Junya Maruyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-light-emitting display device comprising an insulating layer between a pixel electrode and a light-emitting layer
    Patent number: 8735898
    Abstract: Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.
    Type: Grant
    Filed: April 14, 2012
    Date of Patent: May 27, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshimitsu Konuma, Junya Maruyama
  • METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
    Publication number: 20140099742
    Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
    Type: Application
    Filed: December 12, 2013
    Publication date: April 10, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masakazu Murakami, Toru Takayama, Junya Maruyama
  • Semiconductor device and manufacturing method thereof, delamination method, and transferring method
    Patent number: 8691604
    Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.
    Type: Grant
    Filed: August 16, 2012
    Date of Patent: April 8, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Yumiko Ohno, Shunpei Yamazaki
  • Method of manufacturing semiconductor device
    Patent number: 8673739
    Abstract: It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: March 18, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Yuugo Goto, Yumiko Fukumoto, Junya Maruyama, Takuya Tsurume
  • Peeling method and method of manufacturing semiconductor device
    Patent number: 8674364
    Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: March 18, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Junya Maruyama, Shunpei Yamazaki
  • IC card and booking-account system using the IC card
    Patent number: 8674493
    Abstract: It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 18, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Mai Akiba
  • Liquid crystal display device and manufacturing method of liquid crystal display device
    Patent number: 8634041
    Abstract: To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: January 21, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Akio Endo, Yasuyuki Arai
  • SEMICONDUCTOR APPARATUS AND FABRICATION METHOD OF THE SAME
    Publication number: 20140001626
    Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
    Type: Application
    Filed: August 27, 2013
    Publication date: January 2, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • Flexible display panel having curvature that matches curved surface of vehicle part
    Patent number: 8610118
    Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: December 17, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masakazu Murakami, Toru Takayama, Junya Maruyama
  • PEELING METHOD AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE PEELING METHOD
    Publication number: 20130306948
    Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
    Type: Application
    Filed: July 25, 2013
    Publication date: November 21, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Toru TAKAYAMA, Junya MARUYAMA, Yuugo GOTO, Yumiko OHNO
  • Semiconductor apparatus and fabrication method of the same
    Patent number: 8525171
    Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: September 3, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • Peeling method and method for manufacturing display device using the peeling method
    Patent number: 8508682
    Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: August 13, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno
  • Light-emitting device
    Patent number: 8482011
    Abstract: The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: July 9, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Yumiko Ohno
  • Optical sensor device including amplifier circuit and feedback resistor
    Patent number: 8461509
    Abstract: In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: June 11, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Jun Koyama, Takeshi Osada, Takanori Matsuzaki, Kazuo Nishi, Junya Maruyama
  • Semiconductor device and method for manufacturing the same
    Patent number: 8461013
    Abstract: An IC card is more expensive than a magnetic card, and an electronic tag is also more expensive as a substitute for bar codes. Therefore, the present invention provides an extremely thin integrated circuit that can be mass-produced at low cost unlike a chip of a conventional silicon wafer, and a manufacturing method thereof. One feature of the present invention is that a thin integrated circuit is formed by a formation method that can form a pattern selectively, on a glass substrate, a quartz substrate, a stainless substrate, a substrate made of synthetic resin having flexibility, such as acryl, or the like except for a bulk substrate. Further, another feature of the present invention is that an ID chip in which a thin film integrated circuit and an antenna according to the present invention are mounted is formed.
    Type: Grant
    Filed: May 10, 2010
    Date of Patent: June 11, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shinji Maekawa, Gen Fujii, Junya Maruyama, Toru Takayama, Yumiko Fukumoto, Yasuyuki Arai
  • Semiconductor device having a capacitor
    Patent number: 8441102
    Abstract: It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: May 14, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno, Yuugo Goto, Hideaki Kuwabara
  • Semiconductor device and peeling off method and method of manufacturing semiconductor device
    Patent number: 8415208
    Abstract: The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.
    Type: Grant
    Filed: July 15, 2002
    Date of Patent: April 9, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Junya Maruyama, Mayumi Mizukami, Shunpei Yamazaki
  • Semiconductor device and manufacturing method thereof
    Patent number: 8415679
    Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
    Type: Grant
    Filed: May 1, 2012
    Date of Patent: April 9, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • Light emitting device, semiconductor device, and method of fabricating the devices
    Patent number: 8390019
    Abstract: A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.
    Type: Grant
    Filed: April 27, 2009
    Date of Patent: March 5, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Mayumi Mizukami
  • Semiconductor device
    Patent number: 8384699
    Abstract: The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.
    Type: Grant
    Filed: October 19, 2011
    Date of Patent: February 26, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Yasuyuki Arai, Noriko Shibata