Patents by Inventor Junya Maruyama

Junya Maruyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting device
    Patent number: 8237176
    Abstract: The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: August 7, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Yumiko Ohno
  • Semiconductor device including magnet
    Patent number: 8237164
    Abstract: (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. (MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: August 7, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Junya Maruyama, Yumiko Ohno, Masakazu Murakami, Toshiji Hamatani, Hideaki Kuwabara, Shunpei Yamazaki
  • Peeling method and method for manufacturing display device using the peeling method
    Patent number: 8228454
    Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: July 24, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno
  • Liquid crystal display device and manufacturing method of liquid crystal display device
    Patent number: 8218105
    Abstract: To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: July 10, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Akio Endo, Yasuyuki Arai
  • IC CARD AND BOOKING-ACCOUNT SYSTEM USING THE IC CARD
    Publication number: 20120171788
    Abstract: It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
    Type: Application
    Filed: March 8, 2012
    Publication date: July 5, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toru TAKAYAMA, Junya MARUYAMA, Yuugo GOTO, Yumiko OHNO, Mai AKIBA
  • Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
    Patent number: 8212364
    Abstract: The present invention is directed to a semiconductor device having: an interposer; a wiring provided on the interposer; a first chip having a first semiconductor device, a first pad and a first solder ball over the interposer, the first semiconductor device being connected to the first pad and the first pad being connected to the first solder ball; a second chip having a second semiconductor device, a second pad and a second solder ball over the first chip, the second semiconductor device being connected to the second pad and the second pad being connected to the second solder ball; and a terminal provided at a rear side of the interposer, where the wiring and the first chip are connected via the first solder ball, where the first chip and the second chip are connected via the second solder ball, and where the terminal is connected to the first semiconductor device.
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: July 3, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno, Koichiro Tanaka
  • Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
    Patent number: 8193532
    Abstract: The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: June 5, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuyuki Arai, Akira Ishikawa, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Yuko Tachimura
  • Semiconductor Apparatus and Fabrication Method of the Same
    Publication number: 20120126234
    Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
    Type: Application
    Filed: February 2, 2012
    Publication date: May 24, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • Semiconductor device having antenna and method for manufacturing thereof
    Patent number: 8178958
    Abstract: The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.
    Type: Grant
    Filed: October 18, 2005
    Date of Patent: May 15, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kyosuke Ito, Junya Maruyama, Takuya Tsurume, Shunpei Yamazaki
  • Semiconductor device and manufacturing method thereof
    Patent number: 8173520
    Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: May 8, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • IC card and booking-account system using the IC card
    Patent number: 8158491
    Abstract: It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: April 17, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Mai Akiba
  • Self-light-emitting device and method of manufacturing the same
    Patent number: 8158992
    Abstract: Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.
    Type: Grant
    Filed: April 23, 2010
    Date of Patent: April 17, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshimitsu Konuma, Junya Maruyama
  • Semiconductor device and method of manufacturing the same
    Patent number: 8153506
    Abstract: It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern.
    Type: Grant
    Filed: May 4, 2011
    Date of Patent: April 10, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Aya Anzai, Junya Maruyama
  • SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL
    Publication number: 20120070919
    Abstract: It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
    Type: Application
    Filed: November 23, 2011
    Publication date: March 22, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toru TAKAYAMA, Yuugo GOTO, Yumiko FUKUMOTO, Junya MARUYAMA, Takuya TSURUME
  • Semiconductor apparatus and fabrication method of the same
    Patent number: 8134153
    Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: March 13, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • MANUFACTURING METHOD OF LIGHT EMITTING DEVICE AND MANUFACTURING DEVICE THEREOF
    Publication number: 20120038269
    Abstract: The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.
    Type: Application
    Filed: October 21, 2011
    Publication date: February 16, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Junya MARUYAMA, Toru TAKAYAMA, Yumiko OHNO
  • SEMICONDUCTOR DEVICE
    Publication number: 20120032966
    Abstract: The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.
    Type: Application
    Filed: October 19, 2011
    Publication date: February 9, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Yasuyuki Arai, Noriko Shibata
  • OPTICAL SENSOR DEVICE AND ELECTRONIC APPARATUS
    Publication number: 20120025064
    Abstract: In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.
    Type: Application
    Filed: October 12, 2011
    Publication date: February 2, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Jun Koyama, Takeshi Osada, Takanori Matsuzaki, Kazuo Nishi, Junya Maruyama
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20120018729
    Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.
    Type: Application
    Filed: September 29, 2011
    Publication date: January 26, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toru Takayama, Junya Maruyama, Yumiko Ohno
  • SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    Publication number: 20120007159
    Abstract: It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
    Type: Application
    Filed: September 16, 2011
    Publication date: January 12, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Toru TAKAYAMA, Junya MARUYAMA, Yumiko OHNO, Yuugo GOTO, Hideaki KUWABARA