Patents by Inventor Jyun-De Wu

Jyun-De Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210399174
    Abstract: A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.
    Type: Application
    Filed: November 9, 2020
    Publication date: December 23, 2021
    Inventors: HSIN-CHIAO FANG, YEN-LIN LAI, JYUN-DE WU
  • Publication number: 20210327746
    Abstract: A tray structure adapted to a deposition apparatus is provided. The tray structure includes a first tray and a second tray, wherein the first tray is disposed on the deposition apparatus for control of temperature and includes a first carrying portion and at least one heat-conducting structure. The first carrying portion is disposed on a top surface of the first tray. The at least one heat-conducting structure is disposed in a recess of the first carrying portion. The second tray is disposed on the first carrying portion and the at least one heat-conducting structure.
    Type: Application
    Filed: May 25, 2020
    Publication date: October 21, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Chi-Heng Chen, Jyun-De Wu, Yen-Lin Lai
  • Publication number: 20210148972
    Abstract: Herein disclosed are a wafer, a wafer testing system, and a method thereof. Said wafer testing method comprises the following steps. First, an incident light is provided toward a wafer. And, a wafer surface image corresponded to the wafer is generated. Then, determining whether the wafer surface image has a plurality of first strips and a plurality of second strips, and the plurality of first strips and the plurality of second strips are symmetrical.
    Type: Application
    Filed: June 9, 2020
    Publication date: May 20, 2021
    Inventors: Jyun-De WU, Yen-Lin LAI, Chi-Heng CHEN
  • Publication number: 20210130957
    Abstract: A heating apparatus including a rotating stage, a plurality of wafer carriers, a first heater, and a second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate on the rotating axis. The first heater is disposed under the rotating stage. The first heater includes a first width in a radial direction of the rotating stage. The second heater is disposed under the rotating stage. The second heater and the first heater are separated from each other. The second heater includes a second width in the radial direction of the rotating stage, and the first width is not equal to the second width. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.
    Type: Application
    Filed: May 7, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Jyun-De Wu, Yen-Lin Lai, Chi-Heng Chen
  • Publication number: 20210130958
    Abstract: A heating apparatus including a rotating stage, a plurality of wafer carriers, a plurality of first heaters, and at least one second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate by taking the rotating axis as a center. The plurality of first heaters is disposed under a first heating region of the rotating stage. There is a first spacing between any two adjacent first heaters. The at least one second heater is disposed under a second heating region of the rotating stage. There is a spacing between the second heating region and the first heating region, and the spacing is not equal to the first spacing. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.
    Type: Application
    Filed: May 19, 2020
    Publication date: May 6, 2021
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Jyun-De Wu, Yen-Lin Lai, Chi-Heng Chen
  • Patent number: 10431710
    Abstract: A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 1018 atoms/cm3 or between 1017 atoms/cm3 and 1018 atoms/cm3. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 1017 atoms/cm3.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: October 1, 2019
    Assignee: PLAYNITRIDE INC.
    Inventors: Jyun-De Wu, Shen-Jie Wang, Yen-Lin Lai
  • Patent number: 10411159
    Abstract: A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: September 10, 2019
    Assignee: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang, Jyun-De Wu, Chien-Chih Yen
  • Patent number: 10381511
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm ?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: August 13, 2019
    Assignee: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu, Yu-Chu Li
  • Publication number: 20190144996
    Abstract: A wafer carrier including a rotation axis, a center flat region, a wafer distributing region, and a plurality of wafer accommodating grooves is provided. The rotation axis passes through the center of the center flat region. The wafer distributing region surrounds the center flat region. The plurality of wafer accommodating grooves are disposed in the wafer distributing region. The diameter of each of the wafer accommodation grooves is D, and the radius of the center flat region is 0.5D to 3D. A surface of the center flat region is a flat surface. A wafer carrier and a metal organic chemical vapor deposition apparatus using any of the above two wafer carriers are further provided.
    Type: Application
    Filed: November 15, 2018
    Publication date: May 16, 2019
    Applicant: PixeLED Display CO., LTD.
    Inventors: Shen-Jie Wang, Yen-Lin Lai, Jyun-De Wu, Chien-Chih Yen
  • Patent number: 10193023
    Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer, an n-type semiconductor layer, and a first metal electrode is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The n-type semiconductor layer includes a first n-type semiconductor sub-layer, a second n-type semiconductor sub-layer, and an ohmic contact layer. The ohmic contact layer is disposed between the first n-type semiconductor sub-layer and the second n-type semiconductor sub-layer. The first metal electrode is disposed on the first n-type semiconductor sub-layer. A region of the first n-type semiconductor sub-layer located between the first metal electrode and the ohmic contact layer contains metal atoms diffusing from the first metal electrode, so as to form ohmic contact between the first metal electrode and the ohmic contact layer.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: January 29, 2019
    Assignee: PlayNitride Inc.
    Inventors: Jyun-De Wu, Yu-Yun Lo
  • Patent number: 10153394
    Abstract: A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlxInyGa1-x-yN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlxInyGa1-x-yN layers stacked on the light emitting layer, where 0<x<1, 0?y<1, and 0<x+y<1, and the GaN based layer interposed between two of the AlxInyGa1-x-yN layers, and the ohmic contact layer is disposed on the AlxInyGa1-x-yN layers.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: December 11, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Publication number: 20180351032
    Abstract: A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 1018 atoms/cm3 or between 1017 atoms/cm3 and 1018 atoms/cm3. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 1017 atoms/cm3.
    Type: Application
    Filed: July 26, 2017
    Publication date: December 6, 2018
    Applicant: PLAYNITRIDE INC.
    Inventors: Jyun-De WU, Shen-Jie WANG, Yen-Lin LAI
  • Patent number: 10147845
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: December 4, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Patent number: 10109768
    Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A ratio of a sum of thicknesses of all semiconductor layers of the light-emitting diode chip over a maximum width of the light-emitting diode chip ranges from 0.02 to 1.5. A ratio of a sum of thicknesses of all semiconductor layers located in a side of the light-emitting layer toward the p-type semiconductor layer over the sum of thicknesses of all semiconductor layers of the light-emitting diode chip ranges from 0.05 to 0.2.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: October 23, 2018
    Assignee: PlayNitride Inc.
    Inventors: Jyun-De Wu, Yu-Yun Lo
  • Patent number: 10103516
    Abstract: A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: October 16, 2018
    Assignee: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu
  • Publication number: 20180277718
    Abstract: A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.
    Type: Application
    Filed: March 27, 2018
    Publication date: September 27, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang, Jyun-De Wu, Chien-Chih Yen
  • Publication number: 20180166607
    Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A ratio of a sum of thicknesses of all semiconductor layers of the light-emitting diode chip over a maximum width of the light-emitting diode chip ranges from 0.02 to 1.5. A ratio of a sum of thicknesses of all semiconductor layers located in a side of the light-emitting layer toward the p-type semiconductor layer over the sum of thicknesses of all semiconductor layers of the light-emitting diode chip ranges from 0.05 to 0.2.
    Type: Application
    Filed: July 7, 2017
    Publication date: June 14, 2018
    Applicant: PlayNitride Inc.
    Inventors: Jyun-De Wu, Yu-Yun Lo
  • Publication number: 20180166609
    Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer, an n-type semiconductor layer, and a first metal electrode is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The n-type semiconductor layer includes a first n-type semiconductor sub-layer, a second n-type semiconductor sub-layer, and an ohmic contact layer. The ohmic contact layer is disposed between the first n-type semiconductor sub-layer and the second n-type semiconductor sub-layer. The first metal electrode is disposed on the first n-type semiconductor sub-layer. A region of the first n-type semiconductor sub-layer located between the first metal electrode and the ohmic contact layer contains metal atoms diffusing from the first metal electrode, so as to form ohmic contact between the first metal electrode and the ohmic contact layer.
    Type: Application
    Filed: March 8, 2017
    Publication date: June 14, 2018
    Applicant: PlayNitride Inc.
    Inventors: Jyun-De Wu, Yu-Yun Lo
  • Publication number: 20180138663
    Abstract: A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.
    Type: Application
    Filed: January 18, 2017
    Publication date: May 17, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu
  • Patent number: RE47088
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: October 16, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu, Yu-Chu Li