Patents by Inventor Jyun-De Wu

Jyun-De Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10193023
    Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer, an n-type semiconductor layer, and a first metal electrode is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The n-type semiconductor layer includes a first n-type semiconductor sub-layer, a second n-type semiconductor sub-layer, and an ohmic contact layer. The ohmic contact layer is disposed between the first n-type semiconductor sub-layer and the second n-type semiconductor sub-layer. The first metal electrode is disposed on the first n-type semiconductor sub-layer. A region of the first n-type semiconductor sub-layer located between the first metal electrode and the ohmic contact layer contains metal atoms diffusing from the first metal electrode, so as to form ohmic contact between the first metal electrode and the ohmic contact layer.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: January 29, 2019
    Assignee: PlayNitride Inc.
    Inventors: Jyun-De Wu, Yu-Yun Lo
  • Patent number: 10153394
    Abstract: A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlxInyGa1-x-yN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlxInyGa1-x-yN layers stacked on the light emitting layer, where 0<x<1, 0?y<1, and 0<x+y<1, and the GaN based layer interposed between two of the AlxInyGa1-x-yN layers, and the ohmic contact layer is disposed on the AlxInyGa1-x-yN layers.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: December 11, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Publication number: 20180351032
    Abstract: A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 1018 atoms/cm3 or between 1017 atoms/cm3 and 1018 atoms/cm3. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 1017 atoms/cm3.
    Type: Application
    Filed: July 26, 2017
    Publication date: December 6, 2018
    Applicant: PLAYNITRIDE INC.
    Inventors: Jyun-De WU, Shen-Jie WANG, Yen-Lin LAI
  • Patent number: 10147845
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: December 4, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Patent number: 10109768
    Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A ratio of a sum of thicknesses of all semiconductor layers of the light-emitting diode chip over a maximum width of the light-emitting diode chip ranges from 0.02 to 1.5. A ratio of a sum of thicknesses of all semiconductor layers located in a side of the light-emitting layer toward the p-type semiconductor layer over the sum of thicknesses of all semiconductor layers of the light-emitting diode chip ranges from 0.05 to 0.2.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: October 23, 2018
    Assignee: PlayNitride Inc.
    Inventors: Jyun-De Wu, Yu-Yun Lo
  • Patent number: 10103516
    Abstract: A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: October 16, 2018
    Assignee: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu
  • Publication number: 20180277718
    Abstract: A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.
    Type: Application
    Filed: March 27, 2018
    Publication date: September 27, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang, Jyun-De Wu, Chien-Chih Yen
  • Publication number: 20180166607
    Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A ratio of a sum of thicknesses of all semiconductor layers of the light-emitting diode chip over a maximum width of the light-emitting diode chip ranges from 0.02 to 1.5. A ratio of a sum of thicknesses of all semiconductor layers located in a side of the light-emitting layer toward the p-type semiconductor layer over the sum of thicknesses of all semiconductor layers of the light-emitting diode chip ranges from 0.05 to 0.2.
    Type: Application
    Filed: July 7, 2017
    Publication date: June 14, 2018
    Applicant: PlayNitride Inc.
    Inventors: Jyun-De Wu, Yu-Yun Lo
  • Publication number: 20180166609
    Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer, an n-type semiconductor layer, and a first metal electrode is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The n-type semiconductor layer includes a first n-type semiconductor sub-layer, a second n-type semiconductor sub-layer, and an ohmic contact layer. The ohmic contact layer is disposed between the first n-type semiconductor sub-layer and the second n-type semiconductor sub-layer. The first metal electrode is disposed on the first n-type semiconductor sub-layer. A region of the first n-type semiconductor sub-layer located between the first metal electrode and the ohmic contact layer contains metal atoms diffusing from the first metal electrode, so as to form ohmic contact between the first metal electrode and the ohmic contact layer.
    Type: Application
    Filed: March 8, 2017
    Publication date: June 14, 2018
    Applicant: PlayNitride Inc.
    Inventors: Jyun-De Wu, Yu-Yun Lo
  • Publication number: 20180138663
    Abstract: A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.
    Type: Application
    Filed: January 18, 2017
    Publication date: May 17, 2018
    Applicant: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu
  • Publication number: 20180047869
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm ?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.
    Type: Application
    Filed: October 2, 2017
    Publication date: February 15, 2018
    Applicant: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu, Yu-Chu Li
  • Patent number: 9837793
    Abstract: A semiconductor light-emitting device including a light-emitting layer, a first N-type waveguide layer and a plurality of semiconductor layers is provided. The light light-emitting layer has a first side and a second side opposite to the first side. The first N-type waveguide layer is disposed at the first side, and the semiconductor layers are disposed at the second side. The semiconductor layers include at least one P-type semiconductor layer and a plurality of N-type semiconductor layers, and a quantity of the N-type semiconductor layers is more than a quantity of the at least one P-type semiconductor layer.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: December 5, 2017
    Assignee: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu
  • Publication number: 20170294555
    Abstract: A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlxInyGal-x-yN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlxInyGal-x-yN layers stacked on the light emitting layer, where 0<x<1, 0?y<1, and 0<x+y<1, and the GaN based layer interposed between two of the AlxInyGal-x-yN layers, and the ohmic contact layer is disposed on the AlxInyGal-x-yN layers.
    Type: Application
    Filed: June 19, 2017
    Publication date: October 12, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Publication number: 20170288092
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.
    Type: Application
    Filed: June 19, 2017
    Publication date: October 5, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Patent number: 9780255
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: October 3, 2017
    Assignee: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu, Yu-Chu Li
  • Patent number: 9741896
    Abstract: A semiconductor light-emitting device including a P-type semiconductor cladding layer, an N-type semiconductor layer, a light-emitting layer, and a hole injection layer is provided. The P-type semiconductor cladding layer is doped with magnesium. The light-emitting layer is disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer. The hole injection layer is disposed between the P-type semiconductor cladding layer and the light-emitting layer. The hole injection layer includes a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers. The chemical formula of each of the semiconductor material layers is AlxInyGa1-x-yN, and 0?x?1, 0?y?1, and 0?x+y?1.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: August 22, 2017
    Assignee: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu
  • Patent number: 9685586
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: June 20, 2017
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Ching-Liang Lin, Shen-Jie Wang, Jyun-De Wu, Yu-Chu Li, Chun-Chieh Lee
  • Patent number: 9670592
    Abstract: An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: June 6, 2017
    Assignee: PlayNitride Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu
  • Publication number: 20170133552
    Abstract: A semiconductor light-emitting device including a P-type semiconductor cladding layer, an N-type semiconductor layer, a light-emitting layer, and a hole injection layer is provided. The P-type semiconductor cladding layer is doped with magnesium. The light-emitting layer is disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer. The hole injection layer is disposed between the P-type semiconductor cladding layer and the light-emitting layer. The hole injection layer includes a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers. The chemical formula of each of the semiconductor material layers is AlxInyGa1-x-yN, and 0?x?1, 0?y?1, and 0?x+y?1.
    Type: Application
    Filed: June 6, 2016
    Publication date: May 11, 2017
    Inventors: Yen-Lin Lai, Jyun-De Wu
  • Patent number: RE47088
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: October 16, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu, Yu-Chu Li