Abstract: Provided are a semiconductor structure and a preparation method thereof. The semiconductor structure includes a substrate, a buffer layer located on the substrate and a light-emitting structure located on a side of the buffer layer away from the substrate. The buffer layer includes a first region and a second region surrounding the first region. The semiconductor structure further includes a photoresist structure. The photoresist structure is formed by selectively etching the second region of the buffer layer, and the photoresist structure is configured to suppress lateral propagation of light emitted by the light-emitting structure. The light-emitting structure includes a light-emitting unit, and the light-emitting unit is disposed corresponding to the first region.

Abstract: Provided is an LED structure and a manufacturing method thereof. The LED structure includes a substrate and multiple LED light-emitting units. Multiple grooves are disposed on a side of the substrate, and a first insulating layer is disposed on the substrate between the multiple grooves, where each groove includes at least one epitaxial sidewall, and in the groove, the area of the epitaxial sidewall is greater than the maximum opening area of the groove. Each LED light-emitting unit is located on the at least one epitaxial sidewall of the groove. In this manner, the current density of the LED structure can be reduced, the LED structure can be prevented from generating more heat, and the display effect of the LED structure can be improved.

Abstract: Disclosed are an optical coupling structure and a manufacturing method therefor. The optical coupling structure includes a first substrate, a plurality of light-source arrays disposed on a side of the first substrate, a second substrate, and a filtering layer disposed on a side of the second substrate. The first substrate is provided with a first through-hole penetrating through the first substrate, the first through-hole serves as a channel region and is preliminarily used for collecting optical signal emitted by each of the plurality of light-source array. The first substrate is disposed directly opposite to the filtering layer, the filtering layer is configured to filter light signals from different channel regions to reduce crosstalk of different wavelengths between adjacent channels. The second substrate is provided with a second through-hole to accommodate an end of an optical fiber, so that filtered optical signal may be transmitted to the fiber more accurately.

Abstract: Provided are a diode and a manufacturing method therefor. The diode includes: a nitride channel layer; a nitride barrier layer, formed on the nitride channel layer; an oxidation forming layer, wherein a part of the oxidation forming layer is positioned in the nitride barrier layer, and a surface of the oxidation forming layer away from the nitride channel layer is flush with a surface of the nitride barrier layer away from the nitride channel layer; a passivation layer, formed on the nitride barrier layer, wherein the passivation layer includes a first groove penetrating through the passivation layer to expose the oxidation forming layer and a part of the nitride barrier layer; and a first electrode, formed in the first groove, wherein the first electrode is in contact with the nitride barrier layer and the oxidation forming layer.

Abstract: A method for manufacturing an electronic device is provided. The method for manufacturing the electronic device includes: providing a substrate with elements disposed thereon and transferring a portion of the elements from the substrate to a driving substrate, wherein transferring the portion of the elements from the substrate to the driving substrate includes: transferring the portion of the elements from the substrate to the driving substrate, which comprises illuminating regions of the substrate overlapped with the portion of the elements by an energy beam, wherein when the substrate is illuminated by the energy beam, the substrate and the driving substrate are separated by a gap.

Abstract: A group-III-nitride structure and a manufacturing method thereof are provided. In the manufacturing method, one or more grooves are formed by etching a first group-III-nitride epitaxial layer with a patterned first mask layer as a mask; then a second mask layer is formed at least on one or more bottom walls of the one or more grooves, and a first epitaxial growth is performed on the first group-III-nitride epitaxial layer to laterally grow and form a second group-III-nitride epitaxial layer with the second mask layer as a mask, where the one or more grooves are filled with the second group III-nitride epitaxial layer; a second epitaxial growth is then performed on the second group-III-nitride epitaxial layer to grow and form a third group-III-nitride epitaxial layer on the second group-III-nitride epitaxial layer and the patterned first mask layer.

Abstract: The present disclosure provides a display panel, including: a display region, where the display region includes GaN-based LED units arranged in an array, the display region includes a first-selected region, the first-selected region includes a capturing-visible-light-image state including a state of real-time viewing before capturing and a capturing-image state; at the state of real-time viewing before capturing, some GaN-based LED units in the first-selected region are used for real-time viewing before capturing, and at the capturing-image state, all of the GaN-based LED units in the first-selected region are used for capturing an image.

Abstract: A semiconductor structure includes a substrate, a nucleation layer, a buffer layer and a heterojunction structure layer that are stacked sequentially. The nucleation layer includes a first nucleation layer and a second nucleation layer. The first nucleation layer includes a plurality of strip-shaped structures, a strip-shaped trench is formed between two adjacent strip-shaped structures in the plurality of strip-shaped structures, and an extension direction of the strip-shaped trench is parallel to a plane where the substrate is located. The strip-shaped trench and the first nucleation layer are covered by the second nucleation layer, and an ion penetration capability of the second nucleation layer is higher than an ion penetration capability of the first nucleation layer. The technical solutions of the present disclosure may improve a linearity of a device.

Abstract: Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

Abstract: A semiconductor structure includes a substrate; and a buffer layer and a heterojunction structure layer which are disposed on the substrate sequentially, along a direction perpendicular to a direction from the substrate to the buffer layer, the buffer layer includes a plurality of ion implanted regions disposed at intervals, and the plurality of ion implanted regions include an impurity ion. The impurity ion is implanted into the buffer layer at intervals, so that different threshold voltages are formed at the heterojunction structure layer located at different positions in the buffer layer, which makes devices open gradually in a width direction of channels, to relieve decrease of a trans-conductance curve at a relatively large drain current, improving trans-conductance flatness of the devices, and further improving linearity of the devices.

Abstract: A method for preparing a semiconductor thin film includes: providing a substrate; patterning the substrate, the substrate, after being patterned, having a first groove separated from each other and a growth region surrounding the first groove; preparing a semiconductor thin film on the growth region, the semiconductor thin film being provided with a hollowed-out structure corresponding to a position of the first groove; with the semiconductor thin film used as a mask, etching, through the hollowed-out structure, the first groove to form a second groove by wet etching. An orthographic projection area, on a plane of the substrate, of the second groove is greater than an orthographic projection area, on the plane of the substrate, of the hollowed-out structure.

Abstract: A manufacturing method of a light-emitting device includes providing a substrate including a front surface and a back surface opposite to each other; performing patterning process on the front surface of the substrate to form protrusion portions and grooves; growing a semiconductor epitaxial layer on the protrusion portions and/or in the grooves and doping a first element during the growth of the semiconductor epitaxial layer to form first light-emitting units and second light-emitting units, where the component proportion of the first element in the first light-emitting units is different from the component proportion of the first element in the second light-emitting units; turning the substrate upside down on a transposition substrate to expose the back surface of the substrate; and forming third light-emitting units on the back surface of the substrate.

Abstract: A manufacturing method of a light-emitting device includes providing a substrate; forming a first mask layer on the front surface of the substrate and performing patterning process on the first mask layer to form multiple front mask openings in the first mask layer; growing a semiconductor epitaxial layer on the front surface of the substrate based on the first mask layer after patterning process and doping a first element during the growth of the semiconductor epitaxial layer to form multiple first light-emitting units and multiple second light-emitting units where the component proportion of the first element in the first light-emitting units is different from the component proportion of the first element in the second light-emitting units; turning the substrate upside down on a transposition substrate to expose the back surface of the substrate; and forming multiple third light-emitting units on the back surface of the substrate.

Abstract: An intelligent medical speech automatic recognition method includes performing a first model training step, a second model training step, a voice receiving step, a signal pre-treatment step and a transforming step. The first model training step is performed to train a generic statement data and a medical statement data of a database to establish a first model. The second model training step is performed to train a medical textbook data of the database to establish a second model. The voice receiving step is performed to receive a speech signal. The signal pre-treatment step is performed to receive the speech signal from the voice receiver and transform the speech signal into a to-be-recognized speech signal. The transforming step is performed to transform and recognize the to-be-recognized speech signal into a complete sentence writing character according to the first model and the second model.

Abstract: The present application provides a light-emitting device and a manufacturing method thereof. The light-emitting device includes: a base, a first mask layer, a first epitaxial layer, and a light-emitting structure; the first mask layer is arranged on the base and has a first window exposing the base, the first window includes an opening end, where the area of an orthographic projection of the opening end on a plane of the base is smaller than an area of an orthographic projection of the first window on the plane of the base; the first epitaxial layer is epitaxially grown from the base to fill up the first window; the light-emitting structure is arranged on the first epitaxial layer and the first mask layer. Inward sidewalls of the first window are utilized, so that the dislocation of the epitaxially grown GaN-based material terminates at the sidewalls of the first window.

Abstract: An optical coupling structure includes a growth substrate and an optical functional layer. A first hole and a second hole are connected in series along a thickness direction of the growth substrate and are used for connecting an optical fiber including an optical fiber core and a coating layer wrapping the optical fiber core, and the coating layer is accommodated in the second hole, so that alignment and fixation between the optical fiber and the growth substrate are realized, improving overall stability of the optical coupling structure; and an end portion of the optical fiber core is accommodated in the first hole, so that a distance between the end portion and the optical functional layer is reduced, and the end portion is used to couple an optical signal from the optical functional layer, so that a coupling efficiency between the optical signal and the optical fiber may be improved.

Abstract: An optical coupling structure includes an alignment layer, a growth substrate and an optical functional layer, the growth substrate being used for epitaxially manufacturing the optical functional layer, and the optical functional layer being aligned with a first through hole in the growth substrate; an optical fiber input end disposed in a second through hole in the alignment layer for improving stability of the optical fiber input end; and an embedding structure used to penetrate through the first and second through holes, which may not only clamp and fix the alignment layer and the growth substrate, effectively improving overall stability of the optical coupling structure, but also align the optical functional layer with the optical fiber input end, and therefore, light emitting from the optical functional layer directly enters the optical fiber input end through the first and second through holes, improving an optical coupling efficiency.

Abstract: A semiconductor package includes: a die having a conductive pad at a first side of the die; and a redistribution structure over the first side of the die and electrically coupled to the die. The redistribution structure includes: a first dielectric layer including a first dielectric material; a first via in the first dielectric layer, where the first via is electrically coupled to the conductive pad of the die; and a first dielectric structure embedded in the first dielectric layer, where the first dielectric structure includes a second dielectric material different from the first dielectric material, where the first dielectric structure laterally surrounds the first via and contacts sidewalls of the first via.

Abstract: A semiconductor structure includes a substrate including a first region, a second region and a third region located between the first region and the second region; a channel structure formed on the substrate; and a first P-type buried layer located in the third region. The first P-type buried layer extends along a direction parallel to a channel width. In the semiconductor structure, the first P-type buried layer is disposed in the substrate, and is configured to deplete the two-dimensional electron gas in the channel structure so as to achieve an enhancement-mode semiconductor structure. With this disposure, the problems of gate leakage, the electric field concentration effect of the gate close to the edge of the drain and the like are avoided, and tedious steps of manufacturing a P-type semiconductor layer above a channel structure in conventional method is avoided, which simplifies the manufacturing method, and effectively improves the production efficiency.

Abstract: The invention relates to indoline derivatives and uses thereof for treating and/or preventing an inflammatory condition or fibrosis diseases, and tumor or cell proliferative diseases.