Abstract: Semiconductor structures and method of forming the same are provided. A method according to the present disclosure includes providing an intermediate structure that includes an opening, conformally depositing a metal liner over the opening, depositing a dummy fill material over the metal liner, recessing the dummy fill material such that a portion of the metal liner is exposed, removing the exposed portion of the metal liner, removing the recessed dummy fill material, and after the removing of the recessed dummy fill material, depositing a metal fill layer over the opening.

Abstract: Aspects of the disclosure provide a method for forming a fin field effect transistor (FinFET) incorporating a fin top hardmask on top of a channel region of a fin. Because of the presence of the fin top hardmask, a gate height of the FinFET can be reduced without affecting proper operations of vertical gate channels on sidewalls of the fin. Consequently, parasitic capacitance between a gate stack and source/drain contacts of the FinFET can be reduced by lowering the gate height of the FinFET.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A method of forming a semiconductor device includes depositing a target metal layer in an opening. Depositing the target metal layer comprises performing a plurality of deposition cycles. An initial deposition cycle of the plurality of deposition cycles comprises: flowing a first precursor in the opening, flowing a second precursor in the opening after flowing the first precursor, and flowing a reactant in the opening. The first precursor attaches to upper surfaces in the opening, and the second precursor attaches to remaining surfaces in the opening. The first precursor does not react with the second precursor, and the reactant reacts with the second precursor at a greater rate than the reactant reacts with the first precursor.

Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

Abstract: Aspects of the disclosure provide a method for forming a fin field effect transistor (FinFET) incorporating a fin top hardmask on top of a channel region of a fin. Because of the presence of the fin top hardmask, a gate height of the FinFET can be reduced without affecting proper operations of vertical gate channels on sidewalls of the fin. Consequently, parasitic capacitance between a gate stack and source/drain contacts of the FinFET can be reduced by lowering the gate height of the FinFET.

Abstract: The invention is composed of a main member, a bearing, a brake ring and a detection structure. The main member has a middle hole for installing the bearing, a first pivot portion supporting a first shaft, and a second pivot portion supporting a second shaft. The first and second shafts are arranged coaxially and perpendicular to the middle hole. The brake ring has a brake hole, a first arm coupled with the first shaft, a second arm coupled with the second shaft. The detection structure is to keep the brake ring at the first position, so that the brake ring is allowed to rotate around the bearing with the first and second shaft. However, when the brake ring is subjected to a set stress to control the displacement of the brake ring to the second position. Therefore, the displacement change of the brake ring can be visually detected.

Abstract: The invention is composed of a main member, a bearing, a brake ring and a detection structure. The main member has a middle hole for installing the bearing, a first pivot portion supporting a first shaft, and a second pivot portion supporting a second shaft. The first and second shafts are arranged coaxially and perpendicular to the middle hole. The brake ring has a brake hole, a first arm coupled with the first shaft, a second arm coupled with the second shaft. The detection structure is to keep the brake ring at the first position, so that the brake ring is allowed to rotate around the bearing with the first and second shaft. However, when the brake ring is subjected to a set stress to control the displacement of the brake ring to the second position. Therefore, the displacement change of the brake ring can be visually detected.

Abstract: A method includes forming a contact spacer on a sidewall of an inter-layer dielectric, wherein the contact spacer encircles a contact opening, forming a silicide region in the opening and on a source/drain region, depositing an adhesion layer extending into the contact opening, and performing a treatment process, so that the contact spacer is treated. The treatment process is selected from the group consisting of an oxidation process, a carbonation process, and combinations thereof. The method further includes depositing a metal barrier over the adhesion layer, depositing a metallic material to fill the contact opening, and performing a planarization process to remove excess portions of the metallic material over the inter-layer dielectric.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.

Abstract: A transistor includes a substrate. The transistor further includes a channel region comprising dopants of a first type. The transistor further includes a gate structure over the channel region. The transistor further includes a source comprising dopants of a second type. The transistor further includes a lightly doped drain (LDD) comprising dopants of the second type, wherein the LDD is over the source, and the channel region is in direct contact with the LDD. The transistor further includes a deactivated region in the channel region underneath the gate structure, wherein the deactivated region comprises a first region inside an epitaxial layer and a second region outside the epitaxial layer.

Abstract: A method of fabricating a device on a substrate includes doping a channel region of the device with dopants. The method further includes growing an undoped epitaxial layer over the channel region, wherein growing the undoped epitaxial layer comprises deactivating dopants in the channel region to form a deactivated region. The method further includes forming a gate structure over the deactivated region.

Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.

Abstract: An anti-torque safety hook includes a main body and a gate member. The main body has a hook opening, an opening communicating to the right side of the hook opening, a hook nose arranged above the opening, a hook eye arranged below the hook opening, and an energy absorption area arranged on the left side of the hook opening. The gate member has a first end mounted on the main body and a second end comprising a male buckle, adapted for detachably coupled with the hook nose to allow the gate member to open and close the opening. When the main body bears a lateral load of 3000 pounds, the energy absorption area allows the main body to distort in response while the gate member may still close the opening to prevent the risk of decoupling and in order to meet the standard of ANSI/ASSP Z359.12-2019.

Abstract: A virtual consultation method and an electronic device are provided. The method includes: receiving physiological information obtained through sensing a user by a sensing device; analyzing the physiological information to obtain an analysis result; adjusting weights of a plurality of questions according to the analysis result and determining a first question applicable to the user and an order of the first question according to the weights; and outputting the first question according to the order to simulate a question asked by a doctor for the user during consultation.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source/drain region; a gate structure disposed over the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source/drain structure disposed over the source/drain region of the semiconductor fin; and a fin top hard mask vertically interposed between the gate spacer and the semiconductor fin, wherein the fin top hard mask includes a dielectric layer, and wherein a sidewall of the fin top hard mask directly contacts the gate stack, and another sidewall of the fin top hard mask directly contacts the source/drain structure.

Abstract: An anti-torque safety hook includes a main body, a gate member, and a detent member. The main body has a hook opening passing through the front and back sides thereof, a passage communicating to the right side of the hook opening, a female buckle arranged on the passage, a connection unit arranged below the hook opening, and an energy absorption area arranged on the left side of the hook opening. The gate member has a first end mounted on the main body and a second end comprising a male buckle, adapted for detachably coupled with the female buckle, so as to allow the gate member to open and close the passage. The detent member is coupled on the main body and maintained at a first position, so as for ensuring that the gate member closes the passage, while when the detent member is operated and switched to a second position, the safety is disarmed. The present invention mainly utilizes the detent member to ensure the gate member to close the passage.

Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.