Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

Abstract: A heartbeat analyzing method and a heartbeat analyzing system are provided. The heartbeat analyzing method includes: sensing a user using a wearable device and acquiring a physiological signal record; performing a dispersion calculation to the physiological signal record using the wearable device and generating a Poincaré plot of the physiological signal record; and inputting the Poincaré plot into a heart rhythm classifier model and determining a heartbeat classification of the user based on personal health data of the user.

Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.

Abstract: A finFET device that includes a substrate and at least one semiconductor fin extending from the substrate. The fin may include a plurality of wide portions comprising a first semiconductor material and one or more narrow portions. The one or more narrow portions have a second width less than the first width of the wide portions. Each of the one or more narrow portions separates two of the plurality of wide portions from one another such that the plurality of wide portions and the one or more narrow portions are arranged alternatingly in a substantially vertical direction that is substantially perpendicular with a surface of the substrate. The fin may also include a channel layer covering sidewalls of the plurality of wide portions and a sidewall of the one or more narrow portions.

Abstract: A touch display device includes a printed circuit board and a cover. The printed circuit board has a top surface, a bottom surface and soldering points. The printed circuit board includes a first printed circuit, a light element and a second printed circuit. A part of the first printed circuit is on the top surface or the bottom surface and connected with the corresponding soldering point. The light emitting element is on the top surface and electrically connected to the first printed circuit. On the top surface, the second printed circuit does not overlap with the first printed circuit. The cover covers the printed circuit board. The cover has light transmission areas which are aligned with the light elements. The second printed circuit is configured to provide a capacitance value coupled to a capacitive sensing element coupled between the second printed circuit and the cover.

Abstract: A virtual consultation method and an electronic device are provided. The method includes: receiving physiological information obtained through sensing a user by a sensing device; analyzing the physiological information to obtain an analysis result; adjusting weights of a plurality of questions according to the analysis result and determining a first question applicable to the user and an order of the first question according to the weights; and outputting the first question according to the order to simulate a question asked by a doctor for the user during consultation.

Abstract: In an embodiment, a method includes: forming a first recess and a second recess in a substrate; growing a first epitaxial material stack in the first recess, the first epitaxial material stack including alternating layers of a first semiconductor material and a second semiconductor material, the layers of the first epitaxial material stack being undoped; growing a second epitaxial material stack in the second recess, the second epitaxial material stack including alternating layers of the first semiconductor material and the second semiconductor material, a first subset of the second epitaxial material stack being undoped, a second subset of the second epitaxial material stack being doped; patterning the first epitaxial material stack and the second epitaxial material stack to respectively form first nanowires and second nanowires; and forming a first gate structure around the first nanowires and a second gate structure around the second nanowires.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source/drain region; a gate structure disposed over the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source/drain structure disposed over the source/drain region of the semiconductor fin; and a fin top hard mask vertically interposed between the gate spacer and the semiconductor fin, wherein the fin top hard mask includes a dielectric layer, and wherein a sidewall of the fin top hard mask directly contacts the gate stack, and another sidewall of the fin top hard mask directly contacts the source/drain structure.

Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

Abstract: A semiconductor device includes a substrate, a first fin, a second fin, a dummy fin, a first metal gate, a second metal gate, and an isolation structure. The first, the second and the dummy fins are on the substrate, and the dummy fin is disposed between the first fin and the second fin. The first metal gate and the second metal gate are over the first fin and the second fin, respectively. The isolation structure is on the dummy fin, and the dummy fin and the isolation structure separate the first metal gate and the second metal gate.

Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

Abstract: Aspects of the disclosure provide a fin field effect transistor (FinFET) incorporating a fin top hardmask on top of a channel region of a fin. Because of the presence of the fin top hardmask, a gate height of the FinFET can be reduced without affecting proper operations of vertical gate channels on sidewalls of the fin. Consequently, parasitic capacitance between a gate stack and source/drain contacts of the FinFET can be reduced by lowering the gate height of the FinFET.

Abstract: The present invention utilizes a backpack body to define an openable accommodation chamber. The accommodation chamber further has an opening on the top end thereof for the communication of the inside and outside thereof. The accommodation chamber utilizes a restricting structure to position an energy absorption band. The energy absorption band is formed of at least a first layer and a second layer that are coincidingly bound. The top ends of the first layer and the second layer extend a first connecting portion and a second connecting portion respectively. The first connecting portion and the second connecting portion divergently protrude from the backpack body via the opening. The first connecting portion is for coupling with a safety harness, while the second connecting portion is for coupling with an anti-falling device.

Abstract: The present invention mainly aims to rebuilt the structures of a hook body, valve and control handle and the link relationship thereof. The outer surface of two shrouds of the control handle are respectively stamped with a depression adapted project a similar limit block out of the inner surface of each shroud, the limit block having upper, lower blocking surfaces opposite to each other vertically, and the upper, lower blocking surfaces are further controlled to be perpendicular to the shroud, thereby allowing them to transfer stably the stress between the hook body and valve when withstanding the stress due to the inadvertent opening of the valve so that the valve and limit blocks are not deformed easily, have a longer use and enhance the overall use safety greatly.

Abstract: Examples of an integrated circuit with a gate stack and a method for forming the integrated circuit are provided herein. In some examples, a method includes receiving a workpiece that includes: a pair of sidewall spacers disposed over a channel region, a gate dielectric disposed on the channel region and extending along a vertical surface of a first spacer of the pair of sidewall spacers, and a capping layer disposed on the high-k gate dielectric and extending along the vertical surface. A shaping feature is formed on the capping layer and the high-k gate dielectric. A first portion of the high-k gate dielectric and a first portion of the capping layer disposed between the shaping feature and the first spacer are removed to leave a second portion of the high-k gate dielectric and a second portion of the capping layer extending along the vertical surface.

Abstract: A semiconductor device includes a channel region comprising dopants, a gate structure over the channel region and a deactivated region underneath the gate structure and partially within the channel region. Dopants within the deactivated region are deactivated. The deactivated region includes carbon. The deactivated region is physically separated from a top surface of a substrate by a portion of the substrate that is free of carbon.

Abstract: A backpack body has an openable accommodation chamber having a top opening. The accommodation chamber utilizes a restricting structure to position an energy absorption band. The energy absorption band includes a first layer and a second layer that are coincidingly bound. The top ends of the first and second layers extend first and second connecting portions respectively. The first and second connecting portions divergently protrude from the backpack body via the opening. The first connecting portion is configured for coupling with a safety harness, while the second connecting portion is for coupling with an anti-falling device. When the user falls, the falling makes the restricting structure release the first and second layers, so that the first and second layers leave the accommodation chamber via the opening for anti-falling suspension. Accordingly, the present invention has real improvements, including fine appearance, economic efficiency, and etc.

Abstract: A partitioned anti-falling connecting device includes a frame, a movable latch and a hoist ring. The frame has a hanging space with a gap defined between two ends thereof and at least a division island protrudingly arranged between the two ends thereof so as to divide the frame into at least a first section and a second section. The movable latch is arranged on the frame for opening and closing the gap.

Abstract: Examples of an integrated circuit with a gate stack and a method for forming the integrated circuit are provided herein. In some examples, a method includes receiving a workpiece that includes: a pair of sidewall spacers disposed over a channel region, a gate dielectric disposed on the channel region and extending along a vertical surface of a first spacer of the pair of sidewall spacers, and a capping layer disposed on the high-k gate dielectric and extending along the vertical surface. A shaping feature is formed on the capping layer and the high-k gate dielectric. A first portion of the high-k gate dielectric and a first portion of the capping layer disposed between the shaping feature and the first spacer are removed to leave a second portion of the high-k gate dielectric and a second portion of the capping layer extending along the vertical surface.