Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

Abstract: Examples of an integrated circuit with a gate stack and a method for forming the integrated circuit are provided herein. In some examples, a method includes receiving a workpiece that includes: a pair of sidewall spacers disposed over a channel region, a gate dielectric disposed on the channel region and extending along a vertical surface of a first spacer of the pair of sidewall spacers, and a capping layer disposed on the high-k gate dielectric and extending along the vertical surface. A shaping feature is formed on the capping layer and the high-k gate dielectric. A first portion of the high-k gate dielectric and a first portion of the capping layer disposed between the shaping feature and the first spacer are removed to leave a second portion of the high-k gate dielectric and a second portion of the capping layer extending along the vertical surface.

Abstract: A method for fabricating a semiconductor device includes forming a first fin and a second fin on a substrate, forming a first metal-gate line over a first and a second gate regions, applying a first line-cut to separate the first metal-gate line into a first sub-metal gate line and a second sub-metal gate line and forming a second metal-gate line over the first sub-metal gate line and the second sub-metal gate line, applying a second line-cut to separate the second metal-gate line into a third sub-metal gate line and a fourth sub-metal gate line such that a gap is formed between the third sub-metal gate line and the fourth sub-metal gate line and forming an isolation region within the gap.

Abstract: A metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a channel region comprising dopants of a first type. The MOSFET device further includes a gate dielectric over the channel region, and a gate over the gate dielectric. The MOSFET device further includes a source comprising dopants of a second type, and a drain comprising dopants of the second type, wherein the channel region is between the source and the drain. The MOSFET device further includes a deactivated region underneath the gate, wherein dopants within the deactivated region are deactivated.

Abstract: A partitioned anti-falling connecting device includes a frame, a movable latch and a hoist ring. The frame has a hanging space with a gap defined between two ends thereof and at least a division island protrudingly arranged between the two ends thereof so as to divide the frame into at least a first section and a second section. The movable latch is arranged on the frame for opening and closing the gap.

Abstract: A lockable anti-fall catch connector includes a catch member, a locking shaft, and a locker unit. The catch member includes a retention arm and two sleeve members provided at two ends of the retention arm, wherein a first locking portion is provided at one of the sleeve members. The locking shaft is slidably extended between the sleeve members, wherein the locking shaft has a second locking portion detachably coupled with the first locking portion to lock up the locking shaft at the retention arm. The locker unit includes a locking element slidably coupled at one of the sleeve members to engage with the locking shaft, wherein after said locking element is disengaged with the locking shaft, the locking shaft is actuated to disengage the second locking portion with the first locking portion in order to slide the locking shaft with respect to the catch member.

Abstract: The present invention utilizes a backpack body to define an openable accommodation chamber. The accommodation chamber further has an opening on the top end thereof for the communication of the inside and outside thereof. The accommodation chamber utilizes a restricting structure to position an energy absorption band. The energy absorption band is formed of at least a first layer and a second layer that are coincidingly bound. The top ends of the first layer and the second layer extend a first connecting portion and a second connecting portion respectively. The first connecting portion and the second connecting portion divergently protrude from the backpack body via the opening. The first connecting portion is for coupling with a safety harness, while the second connecting portion is for coupling with an anti-falling device.

Abstract: A user location notification system and a method thereof are provided. The system includes a first signal transmitting device, a first sensing device and a server. The first signal transmitting device transmits a first signal associated with a first user. The first sensing device detects the first signal and transmits a first message according to the first signal. The first sensing device is deployed at a first place. The server receives the first message and transmits a first notification message to a first electronic device according to the first message. The first notification message indicates that the first user is located in a first range adjacent to the first place.

Abstract: A rollcall system and a rollcall method are provided. The system includes a first signal transmitting device and a first electronic device. The first signal transmitting device transmits a first signal associated with a first user. The first electronic device detects the first signal and displays first prompt information based on the first signal. The first prompt information indicates first information of the first user in a first range adjacent to the first electronic device and second information of a second user not adjacent to the first range of the first electronic device.

Abstract: An indoor navigation system and an indoor navigation method are provided. The system includes a plurality of first signal transmitting devices and a first electronic device. The first signal transmitting devices are deployed at a first place and transmit a plurality of first signals respectively. The first electronic device is held by a user. The first electronic device obtains a destination location in the first place. The first electronic device detects a second signal transmitted by a second signal transmitting device in the first signals. The first electronic device obtains a first path from a first position adjacent to the second signal transmitting device to the destination location according to the second signal and the destination location. The first electronic device outputs the first path to inform the user of the first electronic device.

Abstract: A vertical transistor includes a source-channel-drain structure, a gate and a gate dielectric layer. The source-channel-drain structure includes a source, a drain over the source and a channel between the source and the drain. The gate surrounds a portion of the channel. The gate is configured to provide compressive strain substantially along an extending direction of the channel when the vertical transistor is an n-channel vertical transistor, or the gate is configured to provide tensile strain substantially along the extending direction of the channel when the vertical transistor is a p-channel vertical transistor. In some embodiments, the vertical transistor further includes an ILD configured to provide tensile strain substantially along an extending direction of the channel when the vertical transistor is an n-channel vertical transistor, or configured to provide compressive strain substantially along an extending direction of the channel when the vertical transistor is a p-channel vertical transistor.

Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.

Abstract: A lockable anti-fall catch connector includes a catch member, a locking shaft, and a locker unit. The catch member includes a retention arm and two sleeve members provided at two ends of the retention arm, wherein a first locking portion is provided at one of the sleeve members. The locking shaft is slidably extended between the sleeve members, wherein the locking shaft has a second locking portion detachably coupled with the first locking portion to lock up the locking shaft at the retention arm. The locker unit includes a locking element slidably coupled at one of the sleeve members to engage with the locking shaft, wherein after said locking element is disengaged with the locking shaft, the locking shaft is actuated to disengage the second locking portion with the first locking portion in order to slide the locking shaft with respect to the catch member.

Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.

Abstract: An embodiment semiconductor device includes a nanowire extending upwards from a semiconductor substrate, a source/drain region in the nanowire, and a channel region in the nanowire over the source/drain region. The source/drain region further extends into the semiconductor substrate past edges of the nanowire. The semiconductor device further includes a gate structure encircling the channel region and a silicide in an upper portion of the source/drain region. A sidewall of the silicide is aligned with a sidewall of the gate structure.

Abstract: A method for fabricating a semiconductor device includes forming a first fin and a second fin on a substrate, forming a first metal-gate line over a first and a second gate regions, applying a first line-cut to separate the first metal-gate line into a first sub-metal gate line and a second sub-metal gate line and forming a second metal-gate line over the first sub-metal gate line and the second sub-metal gate line, applying a second line-cut to separate the second metal-gate line into a third sub-metal gate line and a fourth sub-metal gate line such that a gap is formed between the third sub-metal gate line and the fourth sub-metal gate line and forming an isolation region within the gap.

Abstract: An anti-fall device includes an outer casing which has a receiving chamber, at least a window formed at a sidewall of the outer casing to communicate with the receiving chamber, and a braking member adjacent to the window, and a braking assembly which includes at least a centrifugal actuator supported within the receiving chamber to be moved to selectively engage with the braking member between a locked position and an unlocked position. The centrifugal actuator is aligned with the window, such that the centrifugal actuator of the braking assembly is visibly seen through the window to check whether the centrifugal actuator is actuated at the locked position or the unlocked position.

Abstract: A method for fabricating a semiconductor device includes forming a first fin and a second fin on a substrate. The first fin has a first gate region and the second fin has a second gate region. The method also includes forming a metal-gate line over the first and second gate regions. The metal-gate line extends from the first fin to the second fin. The method also includes applying a line-cut to separate the metal-gate line into a first sub-metal gate line and a second sub-metal gate line and forming an isolation region within the line cut.

Abstract: A triple locking hook connector includes a hook, a locking bar, a first spring, a controlling shaft, and a second spring. The hook has an axle hole and a first groove on an end of a hook opening, and has a spacing portion on the other end of the hook opening. An edge of an end of the locking bar has a first bolt. The first spring is to drive a first bolt to keep at the first position and to drive the other end of the locking bar to remain in the spacing portion. The controlling shaft joins the axle hole via a main axle to restrict the first bolt in the first position and to be driven by a second spring to stay at the third position to ensure the locking bar shutting the hook opening.