Abstract: A computer system and a processing method thereof of sound signal are provided. The computer system includes a platform path controller (PCH), a high-definition audio (HDA) codec, and a digital microphone. The HDA codec is coupled to the PCH. The digital microphone is coupled to the PCH and the HDA codec. The digital microphone is used to generate sound signal. The HDA codec processes the sound signal from the digital microphone. Accordingly, the audio recording with high quality could be provided.

Abstract: A staining kit is provided, including a first pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, CD8, CD45, and CTLA4; a second pattern including antibodies against T cell, B cell, NK cell, monocyte, regulatory cell, dendritic cell, and CD45; a third pattern including antibodies against T cell, B cell, NK cell, monocyte, CD8, CD45, CD45RA, CD62L, CD197, CX3CR1 and TCR??; and a fourth pattern including antibodies against B cell, CD23, CD38, CD40, CD45 and IgM, wherein the antibodies of each pattern are labeled with fluorescent dyes. A method of identifying characterized immune cell subsets of a disease and a method of predicting the likelihood of NPC in a subject in the need thereof using the staining kit are also provided.

Abstract: An identifying method of a sound watermark and a sound watermark identifying apparatus are provided. The method includes the following. A synthesized sound signal is received through a network. Noise interference transferred through the network in the synthesized sound signal is determined according to a reflection-cancelling sound signal. A coding threshold is determined according to the noise interference. A sound watermark signal in the synthesized sound signal is identified according to the coding threshold.

Abstract: A semiconductor structure includes a substrate and a buried gate structure in the substrate. The buried gate structure includes a gate dielectric layer formed on the sidewall and the bottom surface of a trench in the substrate, a barrier layer formed in the trench and on the sidewall and the bottom surface of the gate dielectric layer, a first work function layer formed in the trench and including a main portion and a protruding portion, a second work function layer formed at opposite sides of the protruding portion, and an insulating layer formed in the trench and on the protruding portion of the first work function layer and the second work function layer. The barrier layer surrounds the main portion of the first work function layer. The area of the top surface of the protruding portion is less than the area of the bottom surface of the protruding portion.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.

Abstract: A marking method on image combined with sound signal, a terminal apparatus, and a server are provided. In the method, a first image is displayed. A selection command is detected. A target sound signal is embedded into a speech signal so as to generate a combined sound signal. The combined sound signal is transmitted. The selection command corresponds to a target region in the first image, and the selection command is generated selecting the target region through an input operation. The target sound signal corresponds to the target region of the selection command, and the speech signal is obtained by receiving sound. Accordingly, all attendants in the video conference are able to make makings on a shared screen.

Abstract: A behavior recognition device for recognizing behaviors of a semiconductor manufacturing apparatus includes a storage device and a control unit. The storage device is configured to store log data of the semiconductor manufacturing apparatus. The control unit is cooperatively connected to the storage device, and configured to build a transition state model based on the log data to analyze behaviors related to wafer transfer sequences and manufacturing operations of the semiconductor manufacturing apparatus.

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Abstract: A data transmission system is disclosed. The data transmission system includes at least one signal processing device, at least one conversion device, at least one antenna device, and at least one flexible printed circuit board. The at least one signal processing device is configured to generate or receive at least one data. The at least one conversion device is configured to transform between the at least one data and an optical signal. The at least one antenna device is configured to obtain the at least one data according to the optical signal, and configured to receive or transmit the at least one data wirelessly. The at least one flexible printed circuit board includes at least one conductive layer and at least one optical waveguide layer. The at least one optical waveguide layer is configured to transmit the optical signal.

Abstract: A method of characterizing a serum or plasma portion of a specimen in a specimen container provides a fine-grained HILN index (hemolysis, icterus, lipemia, normal) of the serum or plasma portion of the specimen, wherein the H, I, and L classes may each have five to seven sub-classes. The HILN index may also have one un-centrifuged class. Pixel data of an input image of the specimen container may be processed by a deep semantic segmentation network having, in some embodiments, more than 100 layers. A small front-end container segmentation network may be used to determine a container type and boundary, which may additionally be input to the deep semantic segmentation network. A discriminative network may be used to train the deep semantic segmentation network to generate a homogeneously structured output. Quality check modules and testing apparatus configured to carry out the method are also described, as are other aspects.

Abstract: A manufacturing method for a semiconductor device is provided. The method includes: forming a recess at a top surface of a substrate; forming a channel layer and a barrier layer in order, to conformally cover surfaces of the recess; filling up the recess with a conductive material; removing a top portion of the conductive material, such that a lower portion of the conductive material remained in the recess forms a gate electrode; and forming an insulating structure on the gate electrode. A hetero junction formed at an interface of the channel layer and the barrier layer is external to the substrate, and a two dimensional electron gas or a two dimensional hole gas is induced along the hetero junction external to the substrate.

Abstract: An electronic system includes a fan module, an embedded controller, a reference microphone, a stereo speaker module, a beam-forming control module and an ANC controller. The beam-forming control module controls the orientation of the stereo speaker module, which provides a noise cancellation signal according to a speaker control signal. The reference microphone outputs a wide-band noise signal associated with the operation of the fan module. A virtual microphone module in the active noise cancellation controller outputs a virtual error signal according to a first transfer function between the reference microphone and a physical error microphone at a predetermined fan speed, a second transfer function between the stereo speaker module and the physical error microphone when the fan module is not in operation and the wide-band noise signal. The ANC controller provides the speaker control signal according to a synchronization signal, the wide-band noise signal and the virtual error signal.

Abstract: An amplifier DC bias protection circuit includes an amplifier module, a filter module and a comparator module. The amplifier module converts an input signal into a non-inverting signal and an inverting signal. The filter module blocks AC signals in the non-inverting signal and the inverting signal, thereby providing a first DC bias signal and a second DC bias signal accordingly. The comparator module is configured to determine whether the absolute value of a DC bias difference signal is greater than a predetermined value, and output a determination signal for deactivating the amplifier module when the absolute value of the DC bias difference signal is greater than the predetermined value. The DC bias difference signal is associated with the voltage difference between the first DC bias signal and the second DC bias signal.

Abstract: A conference terminal and an embedding method of audio watermarks are provided. In the method, a first speech signal and a first audio watermark signal are received respectively. The first speech signal relates to a speaker corresponding to another conference terminal, and the first audio watermark signal corresponds to the another conference terminal. The first speech signal is assigned to a host path to output a second speech signal. The first audio watermark signal is assigned to an offload path to output a second audio watermark signal. The host path provides more digital signal processing (DSP) effects than the offload path. The second speech signal and the second audio watermark signal are synthesized to output a synthesized audio signal. The synthesized audio signal is adapted for audio playback. A completed audio watermark signal is outputted accordingly.

Abstract: A textile detection module is suitable for detecting a test specimen. The textile detection module includes a height sensor, an excitation light source, an optical detector, and a focuser. The height sensor is suitable for measuring a height of the test specimen to generate a height signal. The excitation light source provides an excitation light beam. The optical detector is disposed on a transmission path of the excitation light beam and is suitable for receiving the excitation light beam and emitting the excitation light beam along the optical axis and receiving a detection light beam to generate a detection result. The focuser is disposed on the transmission path of the excitation light beam emitted by the optical detector. The focuser includes a focus lens suitable for converting the excitation light beam into a focused excitation light beam.

Abstract: An integrated ceiling fan and a ceiling fan connecting device are provided. The integrated ceiling fan includes the ceiling fan connecting device, a ceiling device, and a ceiling fan device. The ceiling fan connecting device includes a connecting housing and a connecting seat, and the connecting housing has a top surface, a surrounding side surface that surrounds and is connected to an edge of the top surface, and a plurality of mounting slots that are recessed from the top surface. The ceiling device includes a ceiling housing and a plurality of first fixing members that are locked to the ceiling housing and the top surface of the connecting housing. The ceiling fan device includes a motor housing, a plurality of second fixing members that are respectively located in the mounting slots and are locked to the motor housing, and a ceiling fan main body.

Abstract: A semiconductor structure and its manufacturing method are provided. The semiconductor structure includes a substrate having a trench. The semiconductor structure also includes an oxide layer conformally formed in the trench and a protective layer formed in the trench. Also, the protective layer is conformally formed on the oxide layer. The semiconductor structure further includes an insulating material layer in the trench, and the insulating material layer is formed above the protective layer, wherein a top surface of the insulating material layer is higher than a top surface of the protective layer.

Abstract: A method of manufacturing a dynamic random access memory including the following steps is provided. A bit line is formed on a substrate. A sidewall structure is formed on a sidewall of the bit line. The sidewall structure includes a first insulation layer, a second insulation layer, and a shield conductor layer. The first insulation layer is disposed on the sidewall of the bit line. The second insulation layer is disposed on the first insulation layer. The shield conductor layer is disposed between the first insulation layer and the second insulation layer. An interconnection structure electrically connected to the shield conductor layer is formed.