Abstract: A method for forming a semiconductor structure includes the following steps. A first trench is formed in a semiconductor substrate, and a first nitride layer is formed along a sidewall and a bottom surface of the first trench. A first oxide layer is formed over the first nitride layer to fill the first trench, and the first oxide layer is recessed from the first trench to form a first recess. A portion of the first nitride layer exposed from the first recess is etched, and a second nitride layer is formed along a sidewall and a bottom surface of the first recess. The second nitride layer includes a first portion along the bottom surface and a second portion along the sidewall. The second portion is removed, and a second oxide layer is formed over the first portion to fill the first recess.

Abstract: A semiconductor structure includes a semiconductor substrate and an isolation structure disposed in the semiconductor substrate. The isolation structure includes a lining layer disposed along a boundary between the semiconductor substrate and the isolation structure, a first oxide fill layer disposed over the lining layer, a dielectric barrier structure surrounding the first oxide fill layer in a closed loop, and a second oxide fill layer disposed over the dielectric barrier structure and adjacent to the lining layer.

Abstract: A semiconductor device includes: a substrate; a source region disposed on the substrate; a drain region disposed on the source region; and a floating main body region disposed between the source region and the drain region. The floating main body region vertically separates the source region from the drain region. The semiconductor device further includes: a gate region laterally wrapped around the floating main body region; and a gate dielectric located between the floating main body region and the gate region, and insulated the floating main body region from the gate region. A material of the gate dielectric has a negative capacitance feature.

Abstract: A multi-gate semiconductor structure and its manufacturing method are provided. The semiconductor structure includes a substrate having an active area and an isolation structure adjacent to the active area. The semiconductor structure includes a gate structure formed on the substrate and a gate dielectric layer between the gate structure and the substrate. The gate structure includes a first part above the top surface of the substrate and a second part connected to the first part. The second part of the gate structure is formed in the isolation structure, wherein the isolation structure is in direct contact with the bottom surface and sidewalls of the second part of the gate structure. A method of manufacturing the semiconductor structure includes partially etching the isolation structure to form a trench exposing the top portion of sidewalls of the substrate. The gate dielectric layer and the gate structure extend into the trench.

Abstract: A memory structure includes a substrate structure and a memory cell disposed on the substrate structure. The memory cell includes device layers stacked on the substrate structure, a word line, a first contact, and a second contact. The device layer includes a semiconductor layer, a first doped region, a second doped region, a channel region located between the first doped region and the second doped region, and a capacitor. The first and second doped regions and the channel region are disposed in the semiconductor layer. The capacitor includes a first electrode layer, a second electrode layer, and a dielectric layer located between the first and second electrode layers. The word line is disposed on a sidewall of the channel layer. The first contact is electrically connected to the first doped regions. The second contact is electrically connected to the second electrode layers. A manufacturing method thereof is provided.

Abstract: A semiconductor structure includes a substrate, an insulating layer formed on the substrate, and a plurality of pairs of linear structures arranged in parallel and formed in the insulating layer, wherein each pair of linear structures has a first linear structure and a second linear structure. There is a first space S1 between an end portion of the first linear structure and an end portion of the second linear structure, there is a second space S2 between a center portion of the first linear structure and a center portion of the second linear structure, and the second space S2 is greater than the first space S1.

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate having a capacitor region and a periphery region and a capacitor. A transistor is disposed in the substrate in the capacitor region, and a conductive device is disposed in the substrate in the periphery region. The capacitor is disposed on the substrate in the capacitor region and electrically connected to the transistor, wherein an upper electrode layer of the capacitor does not extend into the periphery region.

Abstract: A semiconductor device including a substrate, a capacitor, a stop layer, a first contact, and a second contact is provided. The substrate includes a memory array region and a peripheral circuit region. The capacitor is located in the memory array region. The capacitor includes a first electrode, a second electrode, and an insulating layer. The second electrode is located on the first electrode. The insulating layer is located between the first electrode and the second electrode. The stop layer is located on the second electrode in the memory array region and extends into the peripheral circuit region. A material of the stop layer is not a conductive material. The first contact is located in the memory array region, passes through the stop layer, and is electrically connected to the second electrode. The second contact is located in the peripheral circuit region and passes through the stop layer.

Abstract: A semiconductor structure and its manufacturing method are provided. The method includes sequentially forming an insulating layer and a patterned mask layer on a substrate. The patterned cover curtain layer has an opening, and the opening includes a main body portion and two extension portions located at both ends of the main body portion. The method includes sequentially forming a first sacrificial layer, a second sacrificial layer, and a third sacrificial layer on the insulating layer. The first sacrificial layer fills the extension portions and defines a recess in the main body portion. The second sacrificial layer is formed in the recess defined by the first sacrificial layer. The third sacrificial layer is formed on the first sacrificial layer located in the extension portions.

Abstract: A semiconductor device including a substrate, a capacitor, a stop layer, a first contact, and a second contact is provided. The substrate includes a memory array region and a peripheral circuit region. The capacitor is located in the memory array region. The capacitor includes a first electrode, a second electrode, and an insulating layer. The second electrode is located on the first electrode. The insulating layer is located between the first electrode and the second electrode. The stop layer is located on the second electrode in the memory array region and extends into the peripheral circuit region. A material of the stop layer is not a conductive material. The first contact is located in the memory array region, passes through the stop layer, and is electrically connected to the second electrode. The second contact is located in the peripheral circuit region and passes through the stop layer.

Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first work function layer, a second work function layer, a protective layer, a gate stack, a first liner, a second liner, a planarization layer, and a gate plug. The first work function layer is disposed on a substrate. The second work function layer is disposed on the first work function layer. The protective layer is disposed on the second work function layer. The gate stack is disposed on the protective layer. The first liner is disposed on the gate stack. The second liner is disposed on the first liner. The planarization layer is disposed on the second liner. The gate plug is disposed on the planarization layer and in contact with the first work function layer and the second work function layer.

Abstract: A semiconductor structure includes a substrate and a buried gate structure in the substrate. The buried gate structure includes a gate dielectric layer formed on the sidewall and the bottom surface of a trench in the substrate, a barrier layer formed in the trench and on the sidewall and the bottom surface of the gate dielectric layer, a first work function layer formed in the trench and including a main portion and a protruding portion, a second work function layer formed at opposite sides of the protruding portion, and an insulating layer formed in the trench and on the protruding portion of the first work function layer and the second work function layer. The barrier layer surrounds the main portion of the first work function layer. The area of the top surface of the protruding portion is less than the area of the bottom surface of the protruding portion.

Abstract: A manufacturing method for a semiconductor device is provided. The method includes: forming a recess at a top surface of a substrate; forming a channel layer and a barrier layer in order, to conformally cover surfaces of the recess; filling up the recess with a conductive material; removing a top portion of the conductive material, such that a lower portion of the conductive material remained in the recess forms a gate electrode; and forming an insulating structure on the gate electrode. A hetero junction formed at an interface of the channel layer and the barrier layer is external to the substrate, and a two dimensional electron gas or a two dimensional hole gas is induced along the hetero junction external to the substrate.

Abstract: A semiconductor structure and its manufacturing method are provided. The semiconductor structure includes a substrate having a trench. The semiconductor structure also includes an oxide layer conformally formed in the trench and a protective layer formed in the trench. Also, the protective layer is conformally formed on the oxide layer. The semiconductor structure further includes an insulating material layer in the trench, and the insulating material layer is formed above the protective layer, wherein a top surface of the insulating material layer is higher than a top surface of the protective layer.

Abstract: A method of manufacturing a dynamic random access memory including the following steps is provided. A bit line is formed on a substrate. A sidewall structure is formed on a sidewall of the bit line. The sidewall structure includes a first insulation layer, a second insulation layer, and a shield conductor layer. The first insulation layer is disposed on the sidewall of the bit line. The second insulation layer is disposed on the first insulation layer. The shield conductor layer is disposed between the first insulation layer and the second insulation layer. An interconnection structure electrically connected to the shield conductor layer is formed.

Abstract: A semiconductor structure includes a substrate and a buried gate structure in the substrate. The buried gate structure includes a gate dielectric layer formed on the sidewall and the bottom surface of a trench in the substrate, a barrier layer formed in the trench and on the sidewall and the bottom surface of the gate dielectric layer, a first work function layer formed in the trench and including a main portion and a protruding portion, a second work function layer formed at opposite sides of the protruding portion, and an insulating layer formed in the trench and on the protruding portion of the first work function layer and the second work function layer. The barrier layer surrounds the main portion of the first work function layer. The area of the top surface of the protruding portion is less than the area of the bottom surface of the protruding portion.

Abstract: A method of manufacturing a DRAM includes proving a substrate having active regions. First bit line structures are buried in the substrate. Each of first bit line structures extends along a first direction. Every two of the first bit line structures are disposed between two neighboring ones of the active regions arranged along a second direction. A plurality of pillar structures are formed arranged along the first direction by dividing each of the active regions. Second bit line structures are formed. Each of the second bit line structures is located between the pillar structures of a corresponding one of the active regions and extends through the corresponding one of the active regions along the second direction to be disposed on the first bit line structures at two sides of the corresponding one of the active regions and be electrically connected to the first bit line structures below.

Abstract: A semiconductor structure includes a substrate and a buried gate structure in the substrate. The buried gate structure includes a gate dielectric layer formed on the sidewall and the bottom surface of a trench in the substrate, a barrier layer formed in the trench and on the sidewall and the bottom surface of the gate dielectric layer, a first work function layer formed in the trench and including a main portion and a protruding portion, a second work function layer formed at opposite sides of the protruding portion, and an insulating layer formed in the trench and on the protruding portion of the first work function layer and the second work function layer. The barrier layer surrounds the main portion of the first work function layer. The area of the top surface of the protruding portion is less than the area of the bottom surface of the protruding portion.

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate having a capacitor region and a periphery region and a capacitor. A transistor is disposed in the substrate in the capacitor region, and a conductive device is disposed in the substrate in the periphery region. The capacitor is disposed on the substrate in the capacitor region and electrically connected to the transistor, wherein an upper electrode layer of the capacitor does not extend into the periphery region.

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method includes the following steps. A substrate having a capacitor region and a periphery region is provided, wherein a transistor is formed in the substrate in the capacitor region, and a conductive device is formed in the substrate in the periphery region. A capacitor is formed on the substrate in the capacitance region, wherein the capacitor is electrically connected to the transistor, and an upper electrode layer of the capacitor extends onto the substrate in the periphery region. A protective layer is formed on the upper electrode layer. A doped layer is formed in at least the surface of the protective layer in the capacitor region. An etching process is performed using the doped layer as a mask to remove the protective layer and the upper electrode layer in the periphery region.