Abstract: A semiconductor structure includes a semiconductor substrate, a gate stack disposed over the semiconductor substrate, a first oxide spacer disposed along a sidewall of the gate stack, a protection portion disposed over the first oxide spacer, and an interlayer dielectric layer disposed over the semiconductor substrate. The first oxide spacer and the protection portion are disposed between the gate stack and the interlayer dielectric layer.

Abstract: Provided is a DRAM including a substrate, first bit line structures, second bit line structures, and word line structures. The substrate has active regions each including pillar structures arranged along a first direction. Two first bit line structures extended along the first direction and buried in the substrate are disposed between the active regions arranged along a second direction. Each second bit line structure is located between the pillar structures and extended through the active regions along the second direction to be disposed on the first bit line structures and electrically connected to the first bit line structures. The word line structures are disposed on and spaced apart from the second bit line structures. Each word line structure extended along the second direction is located between the pillar structures and passes through the active regions arranged along the second direction. A manufacturing method of the DRAM is also provided.

Abstract: A semiconductor device and a manufacturing method of the same are provided. The method includes forming a plurality of first conductive structures and a first dielectric layer between the first conductive structures on a substrate. The method also includes forming a trench between the first dielectric layer and the first conductive structures. The method further includes forming a liner material on a sidewall and a bottom of the trench. In addition, the method includes forming a conductive plug on the liner material in the trench. The method also includes removing the liner material to form an air gap, and the air gap is located between the conductive plug and the first dielectric layer.

Abstract: A dynamic random access memory (DRAM) including a substrate, transistors, bit line sets, conductive structures, and word line sets is provided. The transistors are arranged on the substrate in an array. Each transistor includes a first conductive layer, a second conductive layer, and a third conductive layer. The bit line sets are disposed in parallel along a Y direction and pass through the transistors. Each bit line set includes a first bit line and a second bit line electrically connected to the first conductive layer of each transistor respectively. The conductive structures are located in the transistors. The conductive structures are electrically connected to the second conductive layer of the transistors and the substrate. The word line sets are disposed in parallel along an X direction. Each word line set includes a first word line and a second word line located on sidewalls of each transistor respectively.

Abstract: The memory structure includes a substrate, an isolation structure disposed in the substrate; a word line trench; and a word line disposed in the word line trench. The word line has an upper gate and a lower gate. The upper gate includes an upper gate dielectric layer; an upper gate liner disposed on the upper gate dielectric layer; and an upper gate electrode disposed on the upper gate liner. The lower gate includes a lower gate dielectric layer; a lower gate liner disposed on the lower gate dielectric layer; and a lower gate electrode disposed on the lower gate liner. The vertical distance between the top surface of the upper gate dielectric layer and the bottom surface of the word line trench is not greater than that between the top surface of the upper gate electrode and the bottom surface of the word line trench.

Abstract: A spreading device comprises a container comprising a dispensing end and an exterior surface, and at least one gripping or handling surface extending from the container for gripping or handling the spreading device, squeezing or applying pressure against the exterior surface of the flexible container, and causing the dispensing of a spreadable substance out of the dispensing end of the container

Abstract: A method for preparing ?-cellulose, a spinning composition, and a fiber material are provided. The method for preparing ?-cellulose includes providing a coffee residue; subjecting the coffee residue to a decolorization treatment, obtaining a white powder; reacting the white powder with an alkaline solution, obtaining a mixture; filtering the mixture to produce a filter cake; and baking the filter cake to obtain ?-cellulose.

Abstract: A semiconductor device is provided, including a substrate; a dielectric structure over the substrate; and a capping layer over the dielectric structure. The bottom of the capping layer has an M-shaped cross section. The capping layer and the dielectric structure are formed of different materials.

Abstract: A spreading device comprises a container comprising a dispensing end and an exterior surface, and at least one gripping or handling surface extending from the container for gripping or handling the spreading device, squeezing or applying pressure against the exterior surface of the flexible container, and causing the dispensing of a spreadable substance out of the dispensing end of the container.

Abstract: A carbon fiber precursor composition and a method for preparing carbon fiber precursor are provided. The carbon fiber precursor composition includes 100 parts by weight of acrylonitrile; 1-15 parts by weight of co-monomer; and, 0.1-3 parts by weight of stereoregularity controlling agent. The stereoregularity controlling agent has a structure represented by formula (I), Formula (II), Formula (III), or Formula (IV): wherein R1 and R2 are hydrogen, —OH, —COOH, or —NH2; R3 is C2-8 alkylene, or carbonyl; R4 is hydrogen, or C1-6 alkyl; and, R5 is C3-6 alkylene.

Abstract: A muscle training equipment configured to train at least one target muscle of human body and including frame, at least one vibration detector, and at least one resistance adjustment assembly. The at least one vibration detector is configured to be disposed on the at least one target muscle so as to produce at least one muscle vibration signal based on the activity of the at least one target muscle. The at least one resistance adjustment assembly includes motor, handle and linkage assembly. The motor is disposed on the frame and has resistance-adjustable shaft. An end of the linkage assembly is fixed to the resistance-adjustable shaft, and another end of the linkage assembly is pivotally connected to the handle. The at least one resistance adjustment assembly is configured to adjust a resistance force applied on the resistance-adjustable shaft according to the at least one muscle vibration signal.

Abstract: A dynamic random access memory (DRAM) and methods of manufacturing, writing and reading the same. The DRAM includes a substrate, a bit line, a sidewall structure and an interconnection structure. The bit line is disposed on the substrate. The sidewall structure is disposed on a sidewall of the bit line. The sidewall structure includes a first insulation layer, a second insulation layer, and a shield conductor layer. The first insulation layer is disposed on the sidewall of the bit line. The second insulation layer is disposed on the first insulation layer. The shield conductor layer is disposed between the first insulation layer and the second insulation layer. The interconnection structure is electrically connected to the shield conductor layer. The DRAM and the manufacturing, writing and reading methods thereof can effectively reduce the parasitic capacitance of the bit line.

Abstract: A clamping fixture for plug electrode, including an upper mold, a lower mold and at least one clamping guide block is provided. The lower mold and the upper mold can be separated from and combined with each other. The upper mold has at least one opening through which at least one plug electrode is inserted. The at least one clamping guide block is disposed between the upper mold and the lower mold for clamping and releasing the at least one plug electrode. The lower mold has an inclined surface. When the upper mold is combined with the lower mold, the upper mold pushes the clamping guide block to move toward the lower mold, and the clamping guide block is guided by the inclined surface to move for clamping the at least one plug electrode.

Abstract: A method of forming a solderable solder deposit on a contact pad, comprising the steps of providing an organic, non-conductive substrate which exposes said contact pad under an opening of a first non-conductive resist layer, depositing a conductive layer inside and outside the opening such that an activated surface results, thereby forming an activated opening, electrolytically depositing nickel or nickel alloy into the activated opening such that nickel/nickel alloy is deposited onto the activated surface, electrolytically depositing tin or tin alloy onto the nickel/nickel alloy, with the proviso that the electrolytic deposition of later steps results in an entirely filled activated opening, wherein the entirely filled activated opening is completely filled with said nickel/nickel alloy, or in the entirely filled activated opening the total volume of nickel/nickel alloy is higher than the total volume of tin and tin alloy, based on the total volume of the entirely filled activated opening.

Abstract: A conductive elastic fiber and a method for fabricating the conductive elastic fiber are provided. The method for fabricating the conductive elastic fiber includes following steps. A first solution is provided, where the first solution includes an elastic polymer dissolved in a first solvent, wherein the weight ratio of the elastic polymer to the first solvent is from 5:95 to 20:80. A second solution is provided, where the second solution includes a conductive material dispersed in a second solvent, wherein the weight ratio of the conductive material to the second solvent is from 5:95 to 20:80. Next, a wet spinning process employing the first solution and the second solution is performed to obtain the conductive elastic fiber.

Abstract: A carbon fiber precursor composition and a method for preparing carbon fiber precursor are provided. The carbon fiber precursor composition includes 100 parts by weight of acrylonitrile; 1-15 parts by weight of co-monomer; and, 0.1-3 parts by weight of stereoregularity controlling agent. The stereoregularity controlling agent has a structure represented by formula (I), Formula (II), Formula (III), or Formula (IV): wherein R1 and R2 are hydrogen, —OH, —COOH, or —NH2; R3 is C2-8 alkylene, or carbonyl; R4 is hydrogen, or C1-6 alkyl; and, R5 is C3-6 alkylene.

Abstract: A clamping fixture for plug electrode, including an upper mold, a lower mold and at least one clamping guide block is provided. The lower mold and the upper mold can be separated from and combined with each other. The upper mold has at least one opening through which at least one plug electrode is inserted. The at least one clamping guide block is disposed between the upper mold and the lower mold for clamping and releasing the at least one plug electrode. The lower mold has an inclined surface. When the upper mold is combined with the lower mold, the upper mold pushes the clamping guide block to move toward the lower mold, and the clamping guide block is guided by the inclined surface to move for clamping the at least one plug electrode.

Abstract: An alignment mark structure including a substrate, an alignment mark and at least one dummy pattern is provided. The alignment mark is disposed on the substrate. The at least one dummy pattern is disposed on the substrate and located adjacent to the alignment mark, wherein a size of the at least one dummy pattern is smaller than a size of the alignment mark.

Abstract: A spreading device is disclosed which comprises a container comprising a dispensing end and an exterior surface, and at least one gripping or handling surface extending from the container for gripping or handling the spreading device, squeezing or applying pressure against the exterior surface of the flexible container, and causing the dispensing of a spreadable substance out of the dispensing end of the container.

Abstract: A memory device and a method for manufacturing a memory device are provided. The memory device includes a semiconductor substrate having a trench, an oxide layer formed on a surface of the trench, and a buried word line formed in the trench having the oxide layer formed thereon. The oxide layer includes a first portion extending downward from a top surface of the semiconductor substrate, a second portion extending upward from a bottom portion of the trench, and a third portion formed between and adjoining the first portion and the second portion. The third portion tapers toward the second portion. The first portion of the oxide layer is located between the buried word line and the surface of the trench.