Abstract: A random access method, a base station, and a user equipment (UE) are disclosed. The random access method includes: transmitting a first message for random access for the UE, the first message including a preamble message and a signal message; receiving a second message and a fourth message for random access for the UE at a time and determining random access for the UE is successful upon receiving the second message and the fourth message; and upon reception of a second message configured to request the UE to transmit the signal message, transmitting a third message comprising the signal message, receiving the fourth message in response to the third message, and determining random access for the UE is successful upon receiving the fourth message.

Abstract: Various implementations disclosed herein include devices, systems, and methods that generate floorplans and measurements using a three-dimensional (3D) representation of a physical environment generated based on sensor data.

Abstract: A high electron mobility transistor (HEMT) includes a carrier transit layer, a carrier supply layer, a main gate, a control gate, a source electrode and a drain electrode. The carrier transit layer is on a substrate. The carrier supply layer is on the carrier transit layer. The main gate and the control gate are on the carrier supply layer. A fluoride ion doped region is formed right below the main gate in the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the main gate and the control gate, wherein the source electrode is electrically connected to the control gate by a metal interconnect. The present invention also provides a method of forming a high electron mobility transistor (HEMT).

Abstract: A touch display device is disclosed. The touch display device includes a substrate, a scan line, a data line, a scan signal line, a thin film transistor, a touch signal line and a touch electrode. The scan line, the data line, the scan signal line, the thin film transistor, the touch signal line and the touch electrode are disposed on the substrate. An extending direction of the scan line is different from an extending direction of the data line, and the scan line and the data line are electrically connected to the thin film transistor. An extending direction of the scan signal line is different from the extending direction of the scan line, and the scan signal line is electrically connected to the scan line. The touch signal line is electrically connected to the touch electrode.

Abstract: The disclosed subject matter relates generally to structures in semiconductor devices and integrated circuit (IC) chips. More particularly, the present disclosure relates to a structure for use in a conductive line. The present disclosure also relates to a method of forming the structures. The present disclosure provides a structure in a semiconductor device, the structure having a corrugated surface on at least one of its sides. The disclosed structures may have smaller or no micro-trenches and may therefore increase the breakdown voltage of the structures.

Abstract: Beam detection method and device, beam adjusting method and device, antenna module selection method and device, and computer readable storage media are provided. The antenna module selection method is applied in a terminal device including first and second AiPs, and the method includes: the ULA array in the first AiP detecting signals emitted by the UPA array in the first AiP, and comparing detected characteristic parameter values of the signals emitted by the UPA array in the first AiP withe a first preset group of characteristics parameter values; the ULA array in the second AiP detecting signals emitted by the UPA array in the second AiP, and comparing detected characteristic parameter values of the signals emitted by the UPA array in the second AiP with a second preset group of characteristic parameter values: determining to use the first or second AiP for signal transmission and reception based on the comparison.

Abstract: A touch display apparatus is disclosed, which includes a touch display panel with an active area and a peripheral area. The touch display panel includes a substrate, touch electrodes, touch sensing lines, dummy touch sensing lines and transistors. The touch electrodes are disposed on the substrate and in the active area. Each touch sensing line is electrically connected to one of the touch electrodes. The touch sensing lines and the dummy touch sensing lines are in parallel with each other in the active area. The dummy touch sensing lines are electrically connected with each other. Each transistor has a first terminal, a second terminal and a control terminal. The first terminals of the transistors are electrically connected with each other, the second terminal of each transistor is electrically connected to one of the touch sensing lines, and the control terminals of the transistors are electrically connected with each other.

Abstract: A display panel includes a first substrate and multiple pixel structures. The pixel structure includes at least one active element, at least one pixel electrode, a first common electrode, and a second common electrode. The at least one pixel electrode includes a first sub-electrode, a second sub-electrode, and a third sub-electrode. The first sub-electrode is electrically connected to one of the at least one corresponding active element and the second sub-electrode. The third sub-electrode is electrically connected to the second sub-electrode. The first sub-electrode, the second sub-electrode, and the third sub-electrode are different layers. The first common electrode is disposed between the first sub-electrode and the first substrate, and overlaps the first sub-electrode. The second common electrode is disposed between the first sub-electrode and the third sub-electrode, and overlaps the first sub-electrode and the third sub-electrode.

Abstract: The present invention provides a touch display panel. The substrate includes a display region and a non-display region. The first conductive pads, the second conductive pads, the first conductive lines and the second conductive lines are disposed in the non-display region. The first conductive lines are electrically connected to the first conductive pads and the sub-pixels in the display region. The second conductive lines are electrically connected to the second conductive pads and the touch electrodes in the display region. The second conductive line includes a first line segment, a second line segment and a third line segment. The first line segment extends in a first direction and is connected to the second conductive pad. The second line segment extends from the non-display region to the display region. The third line segment extends in a second direction and is connected to the first line segment and the second line segment.

Abstract: A random access method, a base station, and a user equipment (UE) are disclosed. The random access method includes: transmitting a first message for random access for the UE, the first message including a preamble message and a signal message; receiving a second message and a fourth message for random access for the UE at a time and determining random access for the UE is successful upon receiving the second message and the fourth message; and upon reception of a second message configured to request the UE to transmit the signal message, transmitting a third message comprising the signal message, receiving the fourth message in response to the third message, and determining random access for the UE is successful upon receiving the fourth message.

Abstract: A high electron mobility transistor (HEMT) includes a carrier transit layer, a carrier supply layer, a main gate, a control gate, a source electrode and a drain electrode. The carrier transit layer is on a substrate. The carrier supply layer is on the carrier transit layer. The main gate and the control gate are on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the main gate and the control gate, wherein the source electrode is electrically connected to the control gate by a metal interconnect. The present invention also provides a method of forming a high electron mobility transistor (HEMT).

Abstract: Various implementations provide a 3D floor plan based on scanning a room and detecting windows, doors, and openings using 2D orthographic projection. Points of a dense set of points (e.g., a dense point cloud) that are close to a plane representing a wall are projected onto the plane and used to identify windows, doors, and opening on the wall. Representations of the detected windows, doors, and openings may then be positioned in a 3D floor plan based on the known position of the wall within the corresponding room, i.e., the location of the wall plane relative to the dense point cloud is known. Other aspects of a 3D floor plan may be detected directly from points of a dense 3D point cloud, windows, doors, and openings may be detected indirectly using projections of the points of the 3D point cloud onto a 2D plane, and the detected aspects may be combined into a single 3D floor plan.

Abstract: A 3D semiconductor structure includes a buffer layer, a n-type high electron mobility transistor (HEMT) disposed on a first surface of the buffer layer, and a p-type high hole mobility transistor (HHMT) disposed on a second surface of the buffer layer opposite to the first surface.

Abstract: This invention discloses a display panel including a first substrate, light emitting elements, a touch sensing structure and a conductive layer. The light emitting elements are disposed on the first substrate. The touch sensing structure is disposed on the first substrate and on a side away from a light emitting surface of the light emitting elements. The conductive layer is disposed between the light emitting elements and the first substrate and includes contacts or at least a portion of the touch sensing structure, and the light emitting elements and the contacts are electrically connected.

Abstract: A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.

Abstract: A random access method, a base station, an UE and a device with a storage function are disclosed. The random access method includes: the base station receiving a first message transmitted by the UE, the first message including a preamble message and a signal message; decoding the preamble message and the signal message respectively; if the decoding of preamble message is succeeded, but the decoding of signal message fails, the base station transmits a second message to the UE, and storing the signal message of decoding failure, the second message configured to request the UE to retransmit the signal message; receiving the third message transmitted by the UE, the third message including the signal message; using a chase combine mechanism to decode the third message according to the stored signal message in the first message. The present disclosure save time and improve the efficiency of random access.

Abstract: Various implementations disclosed herein include devices, systems, and methods that generate floorplans and measurements using a three-dimensional (3D) representation of a physical environment generated based on sensor data.

Abstract: A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle, a top view of the first metal interconnection includes a flat oval overlapping the circle, and the MTJ includes a bottom electrode, a fixed layer, a free layer, a capping layer, and a top electrode.

Abstract: The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices. The present disclosure provides a memory device including an opening in a dielectric structure, the opening having a sidewall, a first electrode on the sidewall of the opening, a spacer layer on the first electrode, a resistive layer on the first electrode and upon an upper surface of the spacer layer, and a second electrode on the resistive layer.