Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing structure. The semiconductor layer is over the first substrate. The semiconductor layer has a cavity at least partially through the semiconductor layer. The second substrate is over the semiconductor layer. The second substrate has a through hole. The eutectic sealing structure is on the second substrate and covers the through hole. The eutectic sealing structure comprises a first metal layer and a second metal layer eutectically bonded on the first metal layer. A method for manufacturing a semiconductor structure is also provided.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

Abstract: An adapter for a charging cradle includes: a perimeter wall defining a channel between first and second ends; a first device interface on an inner surface of the perimeter wall in communication with the first end, the first device interface configured to receive and align a first mobile device configuration with the charging cradle; a second device interface on the inner surface of the perimeter wall in communication with the second end, the second device interface configured to receive and align a second mobile device configuration with the charging cradle; a cradle interface on an outer surface of the perimeter wall, and configured to couple the adapter to the charging cradle in one of (i) a first orientation to expose a connector of the charging cradle via the first end of the channel, and (ii) a second orientation to expose the connector via the second end of the channel.

Abstract: The application discloses a power supply circuit and a power supply device. A drain of a first N-type metal-oxide-semiconductor field-effect transistor (MOSFET) receives a first input voltage. A filter is coupled to a source of the first N-type MOSFET and is configured to output an output voltage. A non-inverting input terminal of an operational amplifier is coupled to a ground terminal through a first capacitor. A control circuit is coupled to an inverting input terminal of the operational amplifier. One terminal of a switch is coupled to a gate of the first N-type MOSFET, and the other terminal is switchably coupled to the control circuit or an output terminal of the operational amplifier, so that the gate of the first N-type MOSFET is switched to be coupled to the control circuit or the output terminal of the operational amplifier.

Abstract: A display device, including a flexible substrate, multiple lighting units, and multiple signal lines, is provided. The lighting units and the signal lines are located on the flexible substrate, and the signal lines are respectively electrically connected to the lighting units. Each signal line includes multiple first conductive patterns, at least one second conductive pattern, and at least one third conductive pattern. The first conductive patterns are located on the flexible substrate. The second conductive pattern is located on the first conductive patterns, and two ends of each second conductive pattern are respectively connected to two first conductive patterns. In a stretched state, the two first conductive patterns twist the commonly connected second conductive pattern. The third conductive pattern is superimposed on the second conductive pattern.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing structure. The semiconductor layer is over the first substrate. The semiconductor layer has a cavity at least partially through the semiconductor layer. The second substrate is over the semiconductor layer. The second substrate has a through hole. The eutectic sealing structure is on the second substrate and covers the through hole. The eutectic sealing structure comprises a first metal layer and a second metal layer eutectically bonded on the first metal layer. A method for manufacturing a semiconductor structure is also provided.

Abstract: Determining a white plume control line of smoke after wet desulphurization includes: drawing a saturated air enthalpy humidity curve or equivalent; obtaining annual temperature and humidity change data of located cities or regions along with the time at the frequency of at least one datum every day; drawing the data obtained in the saturated air enthalpy humidity curve; and drawing a tangent line on the saturation curve by using each meteorological point in a chart, the right lower side of the tangent line is a de-pluming control region, the de-pluming effect superior to that at the feature meteorological point can be realized when the smoke enters the region after regulation, a region defined by the de-pluming control line and the saturation curve at a low-temperature side forms a de-pluming day number control region, and the point number falling within the region is the white plume generating day number.

Abstract: An accessory for a mobile computing device having a camera with a field of view (FOV), includes: an adapter including: an inner wall having a first opening; a retention mechanism configured to releasably retain the mobile computing device against the inner wall with the camera positioned over the first opening; an outer wall joined to the inner wall by a set of side walls, the outer wall having a second opening with a second perimeter larger than a first perimeter of the first opening; a set of channel walls extending between the first perimeter of the first opening and the second perimeter of the second opening, the set of channel walls defining an open channel permitting the camera FOV to traverse the adapter substantially unobstructed; and a handle mount disposed on the outer wall.

Abstract: A method for forming a semiconductor device includes receiving a first bonded to a second substrate by a dielectric layer, wherein a conductive layer is disposed in the dielectric layer and a cavity is formed between the first substrate, the second substrate and the dielectric layer; forming a via opening in the second substrate to expose the conductive layer and a vent hole in the substrate to couple to the cavity; forming a first buffer layer covering sidewalls of the via opening and a second buffer layer covering sidewalls of the vent hole; and forming a connecting structure in the via opening and a sealing structure to seal the vent hole.

Abstract: A system comprises: a payment accessory including: a payment accessory including: at least one payment data sensor, and an accessory housing defining a mounting interface carrying a set of electrical contacts; and an adapter including: an adapter housing defining (i) an accessory bay configured to removably receive the mounting interface of the payment accessory, and (ii) a device interface opposite the accessory bay, the device interface configured to couple the adapter to a mobile computing device to interconnect the electrical contacts of the mounting interface with the mobile computing device.

Abstract: A semiconductor structure includes a substrate, a MEMS substrate, a dielectric structure between the substrate and the MEMS substrate, a cavity in the dielectric structure, an electrode over the substrate, and a protrusion disposed in the cavity. The MEMS substrate includes a movable membrane, and the cavity is sealed by the movable membrane. A height of the protrusion is less than a depth of the cavity.

Abstract: A microelectromechanical system device includes a substrate, a dielectric layer, an electrode, a surface modification layer and a membrane. The dielectric layer is formed on the substrate, and is formed with a cavity that is defined by a cavity-defining wall. The electrode is formed in the dielectric layer. The surface modification layer covers the cavity-defining wall, and has a plurality of hydrophobic end groups. The membrane is connected to the dielectric layer, and seals the cavity. The membrane is movable toward or away from the electrode. A method for making a microelectromechanical system device is also provided.

Abstract: The present disclosure relates to the field of cable processing apparatus and discloses a cable radial cutting system and a reaction force cone processing apparatus with the cable radial cutting system. The cable radial cutting system includes a cutting bracket, a planetary gear set, a first driving piece and a second driving piece which are mounted on the cutting bracket, and a cutting tool driven by the planetary gear set to rotate and move radially, where the first driving piece and the second driving piece jointly drive the planetary gear set to rotate.

Abstract: Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.