Abstract: A battery for a mobile device includes: a battery housing including an inner wall, an opposing outer wall, a rear wall, and an opposing forward wall, the rear and forward walls each joining the inner and outer walls; an electrical contact disposed on the inner wall, configured to engage with an electrical interface within a device housing; a seal on the inner wall surrounding the electrical contact and a further portion of the inner wall, and configured to engage a complementary surface within the device housing; a hook extending from the forward wall, configured to engage the device housing to establish a pivot axis of the battery housing during battery insertion and removal; and a latch extending from the rear wall, biased towards an extended position to secure the battery within the device housing, and movable to a retracted position to release the battery from the device housing.

Abstract: A computing device identifies an anomaly among a plurality of observation vectors. An observation vector is projected using a predefined orthogonal complement matrix. The predefined orthogonal complement matrix is determined from a decomposition of a low-rank matrix. The low-rank matrix is computed using a robust principal component analysis algorithm. The projected observation vector is multiplied by a predefined demixing matrix to define a demixed observation vector. The predefined demixing matrix is computed using an independent component analysis algorithm and the predefined orthogonal complement matrix. A detection statistic value is computed from the defined, demixed observation vector. When the computed detection statistic value is greater than or equal to a predefined anomaly threshold value, an indicator is output that the observation vector is an anomaly.

Abstract: Provided is an insulating coating device for an electric wire, including a pressing pipe. The pressing pipe includes two first pressing parts which are configured to divide the pressing pipe into two parts along a longitudinal cross section of the pressing pipe, an inner wall of the pressing pipe is provided with an air bag, and the air bag is provided with an air pipe joint which penetrates to an outside of the pressing pipe. In the insulating coating device for the electric wire, a self-curing insulating material is coated on joints of the electric wires, the air bag is used to squeeze the self-curing insulating material such that the self-curing insulating material is shaped and compacted, so that cavities generated in a coating process is reduced, and the self-curing insulating material is uniformly attached to the joints of the electric wires.

Abstract: A microelectromechanical system device includes a substrate, a dielectric layer, an electrode, a surface modification layer and a membrane. The dielectric layer is formed on the substrate, and is formed with a cavity that is defined by a cavity-defining wall. The electrode is formed in the dielectric layer. The surface modification layer covers the cavity-defining wall, and has a plurality of hydrophobic end groups. The membrane is connected to the dielectric layer, and seals the cavity. The membrane is movable toward or away from the electrode. A method for making a microelectromechanical system device is also provided.

Abstract: The present disclosure relates to an integrated chip including a semiconductor device substrate and a plurality of semiconductor devices arranged along the semiconductor device substrate. A micro-electromechanical system (MEMS) layer overlies the semiconductor device substrate. The MEMS layer includes a first moveable mass and a second moveable mass. A capping layer overlies the MEMS layer. The capping layer has a first lower surface directly over the first moveable mass and a second lower surface directly over the second moveable mass. An outgas layer is on the first lower surface and directly between the first pair of sidewalls. A lower surface of the outgas layer delimits a first cavity in which the first moveable mass is arranged. The second lower surface of the capping layer delimits a second cavity in which the second moveable mass is arranged.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes the operations as follows. A first substrate having a top surface is received. A semiconductor layer is formed over the first substrate. A cavity is formed at the top surface of the semiconductor layer. A second substrate is bonded over the first substrate to cover the semiconductor layer. The second substrate has a through hole connected to the cavity of the semiconductor layer. A eutectic sealing structure is formed on the second substrate to cover the through hole. The eutectic sealing structure includes a first metal layer and a second metal layer eutectically bonded on the first metal layer.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

Abstract: A battery for a mobile device includes: a battery housing including an inner wall, an opposing outer wall, a rear wall, and an opposing forward wall, the rear and forward walls each joining the inner and outer walls; an electrical contact disposed on the inner wall, configured to engage with an electrical interface within a device housing; a seal on the inner wall surrounding the electrical contact and a further portion of the inner wall, and configured to engage a complementary surface within the device housing; a hook extending from the forward wall, configured to engage the device housing to establish a pivot axis of the battery housing during battery insertion and removal; and a latch extending from the rear wall, biased towards an extended position to secure the battery within the device housing, and movable to a retracted position to release the battery from the device housing.

Abstract: An electronic paper package structure, including a substrate, an electronic ink layer, a cover plate, a water vapor barrier film and an adhesive layer, is provided. The electronic ink layer is disposed on the substrate. The cover plate covers the electronic ink layer. The water vapor barrier film covers the substrate and the electronic ink layer. The adhesive layer is directly bonded between the cover plate and the water vapor barrier film to seal the substrate and the electronic ink layer. The adhesive layer is not bonded between the cover plate and the electronic ink layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing structure. The semiconductor layer is over the first substrate. The semiconductor layer has a cavity at least partially through the semiconductor layer. The second substrate is over the semiconductor layer. The second substrate has a through hole. The eutectic sealing structure is on the second substrate and covers the through hole. The eutectic sealing structure comprises a first metal layer and a second metal layer eutectically bonded on the first metal layer. A method for manufacturing a semiconductor structure is also provided.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

Abstract: An adapter for a charging cradle includes: a perimeter wall defining a channel between first and second ends; a first device interface on an inner surface of the perimeter wall in communication with the first end, the first device interface configured to receive and align a first mobile device configuration with the charging cradle; a second device interface on the inner surface of the perimeter wall in communication with the second end, the second device interface configured to receive and align a second mobile device configuration with the charging cradle; a cradle interface on an outer surface of the perimeter wall, and configured to couple the adapter to the charging cradle in one of (i) a first orientation to expose a connector of the charging cradle via the first end of the channel, and (ii) a second orientation to expose the connector via the second end of the channel.

Abstract: The application discloses a power supply circuit and a power supply device. A drain of a first N-type metal-oxide-semiconductor field-effect transistor (MOSFET) receives a first input voltage. A filter is coupled to a source of the first N-type MOSFET and is configured to output an output voltage. A non-inverting input terminal of an operational amplifier is coupled to a ground terminal through a first capacitor. A control circuit is coupled to an inverting input terminal of the operational amplifier. One terminal of a switch is coupled to a gate of the first N-type MOSFET, and the other terminal is switchably coupled to the control circuit or an output terminal of the operational amplifier, so that the gate of the first N-type MOSFET is switched to be coupled to the control circuit or the output terminal of the operational amplifier.

Abstract: A display device, including a flexible substrate, multiple lighting units, and multiple signal lines, is provided. The lighting units and the signal lines are located on the flexible substrate, and the signal lines are respectively electrically connected to the lighting units. Each signal line includes multiple first conductive patterns, at least one second conductive pattern, and at least one third conductive pattern. The first conductive patterns are located on the flexible substrate. The second conductive pattern is located on the first conductive patterns, and two ends of each second conductive pattern are respectively connected to two first conductive patterns. In a stretched state, the two first conductive patterns twist the commonly connected second conductive pattern. The third conductive pattern is superimposed on the second conductive pattern.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate, a semiconductor layer, a second substrate, and a eutectic sealing structure. The semiconductor layer is over the first substrate. The semiconductor layer has a cavity at least partially through the semiconductor layer. The second substrate is over the semiconductor layer. The second substrate has a through hole. The eutectic sealing structure is on the second substrate and covers the through hole. The eutectic sealing structure comprises a first metal layer and a second metal layer eutectically bonded on the first metal layer. A method for manufacturing a semiconductor structure is also provided.