Abstract: A semiconductor device includes a first substrate; a dielectric layer disposed over the first substrate and a conductive layer disposed in the dielectric layer; a second substrate bonded to the dielectric layer, wherein the second substrate has a first surface facing the first substrate and a second surface opposite to the first substrate; a connecting structure penetrating the second substrate and a portion of the dielectric layer and electrically coupled to the conductive layer; a vent hole penetrating the second substrate from the second surface to the first surface; a first buffer layer between the connecting structure and the dielectric layer and between the connecting structure and the second substrate; and a second buffer layer covering sidewalls of the vent hole and exposed through the first surface of the second substrate. The first buffer layer and the second buffer layer include a same material and a same thickness.

Abstract: A battery for a mobile device includes: a battery housing including an inner wall, an opposing outer wall, a rear wall, and an opposing forward wall, the rear and forward walls each joining the inner and outer walls; an electrical contact disposed on the inner wall, configured to engage with an electrical interface within a device housing; a seal on the inner wall surrounding the electrical contact and a further portion of the inner wall, and configured to engage a complementary surface within the device housing; a hook extending from the forward wall, configured to engage the device housing to establish a pivot axis of the battery housing during battery insertion and removal; and a latch extending from the rear wall, biased towards an extended position to secure the battery within the device housing, and movable to a retracted position to release the battery from the device housing.

Abstract: A semiconductor device includes a first integrated circuit and a second integrated circuit. The first integrated circuit includes a semiconductor substrate and a dielectric layer disposed on a top surface of the semiconductor substrate. The second integrated circuit is disposed on the dielectric layer of the first integrated circuit and includes a dummy opening extending through the second integrated circuit and having a metal layer covering the inner walls of the dummy opening and in contact with the dielectric layer, wherein the metal layer is electrically grounded or electrically floating.

Abstract: A method of communicating with two or more hosts is provided. The method includes transmitting a first communication between a first host and a meter electronics and transmitting a second communication between a second host and the meter electronics.

Abstract: Provided is an insulating coating device for an electric wire, including a pressing pipe. The pressing pipe includes two first pressing parts which are configured to divide the pressing pipe into two parts along a longitudinal cross section of the pressing pipe, an inner wall of the pressing pipe is provided with an air bag, and the air bag is provided with an air pipe joint which penetrates to an outside of the pressing pipe. In the insulating coating device for the electric wire, a self-curing insulating material is coated on joints of the electric wires, the air bag is used to squeeze the self-curing insulating material such that the self-curing insulating material is shaped and compacted, so that cavities generated in a coating process is reduced, and the self-curing insulating material is uniformly attached to the joints of the electric wires.

Abstract: The application discloses a power supply circuit and a power supply device. A drain of a first N-type metal-oxide-semiconductor field-effect transistor (MOSFET) receives a first input voltage. A filter is coupled to a source of the first N-type MOSFET and is configured to output an output voltage. A non-inverting input terminal of an operational amplifier is coupled to a ground terminal through a first capacitor. A control circuit is coupled to an inverting input terminal of the operational amplifier. One terminal of a switch is coupled to a gate of the first N-type MOSFET, and the other terminal is switchably coupled to the control circuit or an output terminal of the operational amplifier, so that the gate of the first N-type MOSFET is switched to be coupled to the control circuit or the output terminal of the operational amplifier.

Abstract: The present disclosure relates to the field of cable processing apparatus and discloses a cable radial cutting system and a reaction force cone processing apparatus with the cable radial cutting system. The cable radial cutting system includes a cutting bracket, a planetary gear set, a first driving piece and a second driving piece which are mounted on the cutting bracket, and a cutting tool driven by the planetary gear set to rotate and move radially, where the first driving piece and the second driving piece jointly drive the planetary gear set to rotate.

Abstract: An electronic paper package structure, including a substrate, an electronic ink layer, a cover plate, a water vapor barrier film and an adhesive layer, is provided. The electronic ink layer is disposed on the substrate. The cover plate covers the electronic ink layer. The water vapor barrier film covers the substrate and the electronic ink layer. The adhesive layer is directly bonded between the cover plate and the water vapor barrier film to seal the substrate and the electronic ink layer. The adhesive layer is not bonded between the cover plate and the electronic ink layer.

Abstract: A semiconductor device includes a first integrated circuit and a second integrated circuit. The first integrated circuit includes a semiconductor substrate and a dielectric layer disposed on a top surface of the semiconductor substrate. The second integrated circuit is disposed on the dielectric layer of the first integrated circuit and includes a dummy opening extending through the second integrated circuit and having a metal layer covering the inner walls of the dummy opening and in contact with the dielectric layer, wherein the metal layer is electrically grounded or electrically floating.

Abstract: A system comprising a computer-readable storage medium storing at least one program and a method for determining, tracking, and anticipating risk in a manufacturing facility are presented. In example embodiments, the method includes generating a risk data model for the manufacturing facility based on correlations between historical staffing conditions of the manufacturing facility and deviations from existing manufacturing procedures. The method further includes receiving projected operational data that includes information related to anticipated future staffing conditions of the manufacturing facility. The method further includes calculating a risk score based on the projected operational data using the risk data model. The method further includes causing presentation of a user interface that includes a display of the risk score.

Abstract: A computer transforms high-dimensional data into low-dimensional data. (A) A distance matrix is computed from observation vectors. (B) A kernel matrix is computed from the distance matrix using a bandwidth value. (C) The kernel matrix is decomposed using an eigen decomposition to define eigenvalues. (D) A predefined number of largest eigenvalues are selected from the eigenvalues. (E) The selected largest eigenvalues are summed. (F) A next bandwidth value is computed based on the summed eigenvalues. (A) through (F) are repeated with the next bandwidth value until a stop criterion is satisfied. Each observation vector of the observation vectors is transformed into a second space using a kernel principal component analysis with the next bandwidth value and the kernel matrix. The second space has a dimension defined by the predefined number of first eigenvalues. Each transformed observation vector is output.

Abstract: An image sensor may include an array of image pixels. Control circuitry coupled to the array of pixels may be configured to operate the image pixels in an overflow mode of operation, in which each pixel generates an overflow image signal and a complete image signal from a single exposure time period. The overflow image signals and the complete image signals from the pixels may be used to generate a high dynamic range image. While the floating diffusion region in each pixel is not in use, control circuitry may control that pixel to generate a reference signal at the floating diffusion region indicative of pixel-specific dark signal noise. Processing circuitry may mitigate for dark signal non-uniformity across the pixels by correcting the complete image signals using the reference signal to remove dark signal noise in the complete image signals.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

Abstract: An imprint mold and a method for manufacturing the same are provided. The imprint mold includes a plurality of substantially identical or different mold patterns, wherein there isn't any height difference between the mold patterns.