Abstract: A semiconductor memory device includes a DQ-quantity-selection signal generation circuit which generates a DQ-quantity-selection signal indicative of a number of input/output data bits, bit lines which transfer read data and write data for memory cells, and a plurality of sense amplifiers which are connected to the bit lines, and are activated as many as indicated by the DQ-quantity-selection signal.

Abstract: A semiconductor integrated circuit having an active mode and a standby mode includes a node at which an internal circuit is connected to a latch circuit, the latch circuit storing a data signal output from the internal circuit. A level determination unit determines a logic level of the node in response to a control signal indicating the standby mode.

Abstract: A semiconductor memory device includes a data buffer for inputting/outputting data from/to an exterior of the device, a plurality of DRAM cell array blocks, an SRAM redundancy cell which is situated around each of the plurality of DRAM cell array blocks, a fuse circuit which stores therein an address of a defect memory cell in the DRAM cell array blocks, a comparison circuit which compares an input address with the address stored in the fuse circuit, and an I/O bus which couple the SRAM redundancy cell to the data buffer in response to an address match found by the comparison circuit.

Abstract: To supply a ground potential Vss to a starter signal level shifter and a fuse information latch circuit on the basis of a fuse starter signal of which low level is shifted from the ground potential Vss to a negative voltage Vnn by the starter signal level shifter until the fuse information is latched to the fuse information latch circuit. After the foregoing fuse information is latched, a finally attained potential is supplied to the starter signal level shifter and the fuse information latch circuit. Therefore, it is possible to latch without shifting the low level, so that it becomes possible to easily shift the low level from the ground potential Vss to the negative voltage Vnn after latching.

Abstract: The invention provides N-phenyltetrahydrophthalamic acid derivatives represented by the general formula [I], methods of producing the same, herbicides containing the same as the effective components, imidoylchloride derivatives as the intermediate products and methods of producing the same, wherein X and Y each individually represent hydrogen atoms or halogen atoms, R1 represents a lower alkoxycarbonylalkylthio group, R2 represents a lower alkyl group, a halogenated lower alkyl group or a substituted or unsubstituted phenyl group, and R3 represents a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, or a lower alkoxyalkoxy group. The herbicides of the present invention, which are very useful, can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc., and are not harmful to crops.

Abstract: To supply a ground potential Vss to a starter signal level shifter and a fuse information latch circuit on the basis of a fuse starter signal of which low level is shifted from the ground potential Vss to a negative voltage Vnn by the starter signal level shifter until the fuse information is latched to the fuse information latch circuit. After the foregoing fuse information is latched, a finally attained potential is supplied to the starter signal level shifter and the fuse information latch circuit. Therefore, it is possible to latch without shifting the low level, so that it becomes possible to easily shift the low level from the ground potential Vss to the negative voltage Vnn after latching.

Abstract: A semiconductor memory device includes a DQ-quantity-selection signal generation circuit which generates a DQ-quantity-selection signal indicative of a number of input/output data bits, bit lines which transfer read data and write data for memory cells, and a plurality of sense amplifiers which are connected to the bit lines, and are activated as many as indicated by the DQ-quantity-selection signal.

Abstract: The present invention is that, in a memory circuit comprising a cell array and peripheral circuit, the cell array power source is supplied to a circuit which operates during the power-down mode in addition to the cell array. The circuit which operates during the power-down mode is, for example, a self-refresh circuit. A dynamic memory requires refreshing operations in fixed intervals even during the power-down mode. Therefore, the self-refresh circuit is operating even during the power-down mode. Thus, by supplying the cell array power source to the self-refresh circuit, it is possible to consume a prescribed quantity of current from the cell array power source generation circuit to an extent of being able to maintain the level thereof even during the power-down mode. The cell array power source may be maintained within an appropriate voltage range thereby.

Abstract: To reduce current consumption, there is provided a circuit for each bank, comprising selection circuits 26 through 28 each for selecting either a normal supply voltage Vii or a higher supply voltage Vjj as a supply voltage VH0 in response to a selection control signals SC0 and *SC0, a selection control circuit 22 for generating the signals SC0 and *SC0 to make the selection circuits select Vii when a bank activation signal BRAS0 is inactive and Vjj for a predetermined period in response to activation of BRAS0, and sense amplifier driving circuits 111 through 113 for supplying the ground voltage and VH0 to the sense amplifier rows in response to activation of sense amplifier control signals. To stabilize the output voltage Vii of the power supply circuit having a NMOS transistor, the drain electrode, gate and source electrodes of which are at VCC, VG and approximately Vii=VG−Vth, where Vth is the threshold voltage of the NMOS transistor 45, a leak circuit is employed.

Abstract: A transistor of a driver in the semiconductor integrated circuit according to the present invention has its gate connected to a controlling circuit, and has its drain connected to a sense amplifier. The controlling circuit supplies the gate of the transistor with a gate-to-source voltage exceeding or below other power supply voltages. The drain-to-source resistance of the transistor in the on state becomes sufficiently lower as compared with that in the case of supplying the power supply voltages between the gate and source of the transistor. Accordingly, the amplifying speed of the sense amplifier is heightened without altering the sense amplifier and the driver. Besides, the amplifying speed of the sense amplifier is heightened without raising the power supply voltage which supplies the carriers to the driver.

Abstract: The present invention provides a method for producing trifluoromethanesulfonyl chloride. This method includes the step of reacting trifluoromethanesulfonic acid with phosphorous trichloride and chlorine. With this method, trifluoromethanesulfonyl chloride can be easily and highly selectively produced at high yield. The reaction may be carried out at about atmospheric pressure. Furthermore, the reaction may be carried out in the presence of phosphorus oxychloride either under a pressurized condition or at about atmospheric pressure.

Abstract: To reduce current consumption, there is provided a circuit for each bank, comprising selection circuits 26 through 28 each for selecting either a normal supply voltage Vii or a higher supply voltage Vjj as a supply voltage VH0 in response to a selection control signals SC0 and *SC0, a selection control circuit 22 for generating the signals SC0 and *SC0 to make the selection circuits select Vii when a bank activation signal BRAS0 is inactive and Vjj for a predetermined period in response to activation of BRAS0, and sense amplifier driving circuits 111 through 113 for supplying the ground voltage and VH0 to the sense amplifier rows in response to activation of sense amplifier control signals. To stabilize the output voltage Vii of the power supply circuit having a NMOS transistor, the drain electrode, gate and source electrodes of which are at VCC, VG and approximately Vii=VG-Vth, where Vth is the threshold voltage of the NMOS transistor 45, a leak circuit is employed.

Abstract: The invention provides N-phenyltetrahydrophthalamic acid derivatives represented by the general formula ?I!, methods of producing the same, herbicides containing the same as the effective components, imidoylchloride derivatives as the intermediate products and methods of producing the same, ##STR1## wherein X and Y each individually represent hydrogen atoms or halogen atoms, R.sup.1 represents a lower alkoxycarbonylalkylthio group, R.sup.2 represents a lower alkyl group, a halogenated lower alkyl group or a substituted or unsubstituted phenyl group, and R.sup.3 represents a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, or a lower alkoxyalkoxy group. The herbicides of the present invention, which are very useful, can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc., and are not harmful to crops.

Abstract: A resin composition for automobile constant velocity joint boots having a surface hardness (Shore-D) of 34.about.44, and obtainable by melt mixing as essential components: 100 parts by weight of polyester elastomer (A); and, for every 100 parts by weight of said polyester elastomer (A), 0.05.about.7.0 parts by weight of organic polyisocyanate compound (B); and 0.1.about.5.0 parts by weight of silicone compound (C). A molded automobile constant velocity joint boot molded therefrom is superior in abrasion resistance, and flexibility.

Abstract: The invention provides N-acyl-N-phenylmaleamic acid derivatives represented by the general formula I!, a method of producing the same, and a herbicide containing the same as the effective components, ##STR1## wherein X and Y each individually represent hydrogen atoms or halogen atoms, R.sup.1 represents a hydrogen atom, a halogen atom, a lower alkyl group, a lower alkenyl group, a lower alkynyl group, a lower alkoxyalkyl group or a lower alkoxycarbonylalkyl group, R.sup.2 represents a lower alkyl group, a halogenated lower alkyl group or a substituted or unsubstituted phenyl group, R.sup.3 represents a hydrogen atom or a lower alkyl group, and R.sup.4 represents a hydroxyl, a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, a lower alkoxyalkoxy group, a benzyloxy group or a lower alkoxycarbonylalkoxy group. This herbicide which is very useful can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc., and is not harmful to crops.

Abstract: The invention provides N-aryloxyacyl-N-phenyltetrahydrophthalamic acid derivatives represented by the general formula [I], a method of producing the same, and a herbicide containing the same as the effective components, ##STR1## wherein X and Y each individually represent hydrogen atoms or halogen atoms, Ar represents a substituted or unsubstituted phenyl group or naphthyl group, R.sup.1 represents a hydrogen atom, a halogen atom, a lower alkyl group, a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, a lower alkoxyalkoxy group or a lower alkoxycarbonylalkoxy group, R.sup.2 represents a hydrogen atom or a lower alkyl group, R.sup.3 represents a hydroxyl, a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, a lower alkoxyalkoxy group, a benzyloxy group or a lower alkoxycarbonylalkoxy group, and m is an integer ranging from 0 to 5. This herbicide which is very useful can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc.

Abstract: The invention provides N-acyl-N-phenyltetrahydrophthalamic acid derivatives represented by the general formula [I], methods of producing the same, herbicides containing the same as the effective components, imidoylchloride derivatives as the intermediate products and methods of producing the same, ##STR1## wherein R.sup.1 represents an alkyl group, an alkenyl group, an alkynyl group, an alkoxyalkyl group, a haloalkyl group, a haloalkenyl group, a haloalkynyl group or a cyanoalkyl group, R.sup.2 represents a lower alkyl group or a halogenated lower alkyl group, and R.sup.3 represents a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, a lower alkoxyalkoxy group, a substituted or unsubstituted benzyloxy group, a lower haloalkyloxy group or a lower alkoxycarbonylalkoxy group. The herbicides of the present invention, which are very useful, can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc., and are not harmful to crops.

Abstract: The invention provides N-acyl-N-phenyltetrahydrophthalamic acid derivatives represented by the general formula [I], methods of producing the same, and herbicides containing the same as the effective components, ##STR1## wherein X and Y each individually represent hydrogen atoms or halogen atoms, R.sup.1 represents a hydrogen atom, a halogen atom, a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, a lower alkoxyalkoxy group or a lower alkoxycarbonylalkoxy group, R.sup.2 represents a lower alkyl group, a halogenated lower alkyl group, or a substituted or unsubstituted phenyl group, and R.sup.3 represents a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, a lower alkoxyalkoxy group, a benzyloxy group or a lower alkoxycarbonylalkoxy group. The herbicides which are very useful can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc, and are not harmful to crops.

Abstract: A transparent article comprising on the surface of a transparent substrate a cured transparent coating film composed of a composition comprising 100 parts by weight of an organic silicon compound represented by the following general formula (I) and/or a hydrolysis product thereof:R.sup.1.sub.a R.sup.2.sub.b Si(OR.sup.3).sub.4-a-b (I)wherein R.sup.1 and R.sup.2 each stand for an alkyl group, an alkenyl group, an aryl group or a hydrocarbon group having a halogen group, an epoxy group, a glycidoxy group, an amino group, a mercapto group, a methacryloxy group or a cyano group, R.sup.3 stands for an alkyl group having 1 to 8 carbon atoms, an alkoxyalkyl group, an acyl group or a phenyl group, and a and b are 0 or 1,10 to 300 parts by weight of a polyfunctional epoxy resin having an aromatic ring and/or an aliphatic ring and 25 to 800 parts by weight of antimony oxide fine particles having an average particle size of 1 to 200 m.mu..

Abstract: A chemical data handling system is characterized by a display system which displays each data of many compound with an image of a table sheet where the chemical structures are arranged in the direction X and general characteristic data items are arranged in the direction Y. For realizing the display of the entire large scale data table, the system provides a special scroll function. In the case of lateral scroll, the chemical structure display column arranged vertically is fixed at the left side of screen, and the remaining data columns are scrolled laterally. In the case of a vertical scroll, the data item display row arranged laterally is fixed at the upper side of screen, and the remaining data rows are scrolled vertically. Moreover, it is possible to display not only the data table but also a chemical structure list or a chemical data correlation graph.