Abstract: A projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective suitable for microlithography projection exposure machines has a plurality of optical elements transparent for radiation at an operating wavelength of the projection objective. At least one optical element is a high-index optical element made from a high-index material with a refractive index n?1.6 at the operating wavelength.

Abstract: A very high-aperture, purely refractive projection objective having a multiplicity of optical elements has a system diaphragm (5) arranged at a spacing in front of the image plane. The optical element next to the image plane (3) of the projection objective is a planoconvex lens (34) having a substantially spherical entrance surface and a substantially flat exit surface. The planoconvex lens has a diameter that is at least 50% of the diaphragm diameter of the system diaphragm (5). It is preferred to arrange only positive lenses (32, 33, 34) between the system diaphragm (5) and image plane (3). The optical system permits imaging in the case of very high apertures of NA?0.85, if appropriate of NA?1.

Abstract: There is provided an illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength ?193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: There is provided an illumination system that includes (a) a light source that emits light having a wavelength ?193 nm, where the light provides a predetermined illumination in a plane distant from the light source and defines a used area in the plane, and (b) a sensor, situated in or near the plane, for detecting light outside the used area.

Abstract: The invention relates to an arrangement of optical elements in a microlithographic projection exposure apparatus, particularly in a projection objective of a microlithographic projection exposure apparatus. The arrangement comprises a rigid first optical element, a rigid second optical element with a first optical surface and a second optical surface on opposite sides and a first liquid. The first optical element has a concave optical surface. The first side of the second optical element is facing the concave optical surface of the first optical element. The first liquid is at least partially filling the space between the first optical element and the second optical element.

Abstract: A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: A projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective suitable for microlithography projection exposure machines has a plurality of optical elements transparent for radiation at an operating wavelength of the projection objective. At least one optical element is a high-index optical element made from a high-index material with a refractive index n?1.6 at the operating wavelength.

Abstract: An immersion liquid for a microlithographic projection exposure apparatus is enriched with heavy isotopes. This reduces the chemical reactivity, which leads to an extension of the lifetime of optical elements which come in contact with the immersion liquid. For example, heavy water (D2O), deuterated sulfuric acid, (D2SO4) or deuterated phosphoric acid D3P16O4 may be used. Organic compounds such as perfluoro polyethers, which have been deuterated or enriched with heavy oxygen (18O), are furthermore suitable.

Abstract: In a projection objective provided for imaging a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the aid of an immersion medium arranged between a last optical element of the projection objective in the light path and the image plane, the last optical element has a transparent substrate and a protective layer system that is fitted to the substrate, is provided for contact with the immersion medium and serves for increasing the resistance of the last optical element to degradation caused by the immersion medium.

Abstract: In a projection objective provided for imaging a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the aid of an immersion medium arranged between a last optical element of the projection objective in the light path and the image plane, the last optical element has a transparent substrate and a protective layer system that is fitted to the substrate, is provided for contact with the immersion medium and serves for increasing the resistance of the last optical element to degradation caused by the immersion medium.

Abstract: In a projection objective provided for imaging a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the aid of an immersion medium arranged between a last optical element of the projection objective in the light path and the image plane, the last optical element has a transparent substrate and a protective layer system that is fitted to the substrate, is provided for contact with the immersion medium and serves for increasing the resistance of the last optical element to degradation caused by the immersion medium.

Abstract: There is provided an illumination system for microlithography. The illumination system includes an optical element having a plurality of field raster elements, a plane in which a field is illuminated, and a grazing incidence mirror situated in a light path from the optical element to the plane, after the optical element. The illumination system has no other grazing incidence mirror in the light path, after the optical element and before the plane.

Abstract: Imaging systems, in particular a projection objectives of a microlithographic projection exposure apparatus, are provided. The imaging systems can have an optical axis and produce an image field which is extra-axial relative to the optical axis. The imaging systems can include a first optical element which causes a first distribution of the retardation in a plane that lies perpendicular to the optical axis, and at least one second optical element which causes a second distribution of the retardation in a plane that lies perpendicular to the optical axis. The second distribution of the retardation can at least partially compensate the first distribution of the retardation. The first and the second optical elements can be designed without rotational symmetry relative to the optical axis.

Abstract: A microlithographic projection illumination system has a focus-detection system for optically detecting deviations of the image plane of a projection lens from the upper surface of a substrate arranged in the vicinity of its image plane. The focus-detection system has a system for coupling in at least one measuring beam that is obliquely incident on, and to be reflected at, the substrate surface into an intermediate zone between the final optical surface of the imaging system and the substrate surface and a system for coupling out the measuring beam and detecting it following its reflection at the substrate surface.

Abstract: There is provided an illumination system. the illumination system includes (a) a source of light having a wavelength of less than or equal to 193 nm, and (b) an optical element in a path of the light, having a first raster element, a second raster element, a third raster element and a fourth raster element situated thereon. The second raster element is adjacent to the first raster element, and located a first distance from the first raster element. The fourth raster element is adjacent to the third raster element, and located a second distance from the third raster element. The second distance is different from the first distance.

Abstract: An imaging system for imaging an object field arranged in an object surface of the imaging system onto an image field arranged in an image surface of the optical system while creating at least one intermediate image including: a first imaging subsystem for creating the intermediate image from radiation coming from the object surface, the first imaging subsystem having a first optical axis; and a second imaging subsystem different in construction from the first imaging subsystem for imaging the intermediate image onto the image surface, the second imaging subsystem having a second optical axis; wherein the first optical axis is offset with respect to the second optical axis by an axis offset at the intermediate image and wherein the intermediate image has a correction status adapted to the axis-offset such that the correction status of the image field is essentially free from aberrations caused by the axis-offset.

Abstract: The invention relates to an objective designed as a microlithography projection objective for an operating wavelength. The objective has a greatest adjustable image-side numerical aperture NA, at least one first lens made from a solid transparent body, in particular glass or crystal, with a refractive index nL and at least one liquid lens (F) made from a transparent liquid, with a refractive index nF. At the operating wavelength the first lens has the greatest refractive index nL of all solid lenses of the objective, the refractive index nF of the at least one liquid lens (F) is bigger than the refractive index nL of the first lens and the value of the numerical aperture NA is bigger than 1.

Abstract: A retardation arrangement for converting an input radiation beam, incident from an input side of the retardation arrangement, into an output radiation beam which has over its cross section a spatial distribution of polarization states which can be influenced by the retardation arrangement and differs from the spatial distribution of polarization states of the input radiation, is designed as a reflective retardation arrangement. A useful cross section of the retardation arrangement has a multiplicity of retardation zones of different retardation effect. Such a mirror arrangement having a retardation effect varying as a function of location can be used to compensate undesired fluctuations in the polarization state over the cross section of an input radiation beam and/or to set specific output polarization states, for example in order to set radial or tangential polarization.

Abstract: The disclosure relates to an image-projecting system, such as a projection objective of a microlithographic projection exposure apparatus. In some embodiments, at least one optical element includes a cubic-crystalline material which at a given operating wavelength has a refractive index n that is greater than 1.6. The image-side numerical aperture NA of the image-projecting system is smaller than the refractive index n. The difference (n?NA) between the refractive index n and the numerical aperture NA of the image-projecting system is at most 0.2.