Abstract: A cleaning blade has an elastic body formed of a urethane elastomer, and a treated surface layer formed at least at a portion which comes into contact with a contact target of the elastic body. The treated surface layer is formed through impregnating a surface portion of the elastic body with a surface treatment liquid containing a bifunctional isocyanate compound, at least one polyol, and an organic solvent; or a surface treatment liquid containing an isocyanate group-containing compound having an isocyanate group at an end thereof, which compound is a reaction product of the bifunctional isocyanate compound with the at least one polyol, and an organic solvent, and curing the surface treatment liquid. The difference between the nitrogen concentration at the surface and the nitrogen concentration in the elastic body at a depth of 0.5 mm from the surface of the treated surface layer is 0.02 to 0.15 mass %.

Abstract: Disclosed are a blood pressure estimation device, etc., that is capable of highly accurate estimation of blood pressure. The blood pressure estimation device (101) has a blood pressure estimation unit (102) that: finds a specific blood pressure related to pulse wave information (2002), by browsing blood pressure information (2001) associating the pulse wave information and blood pressure related to pulse wave signals caused by blood pressure during a specific period and measured, the pulse wave information associating blood pressure during the specific period and the pulse wave signals; and estimates the blood pressure relating to the pulse wave information (2002) on the basis of the found specific blood pressure.

Abstract: Disclosed are a blood pressure estimation device and the like which make it possible to estimate blood pressure with a high degree of accuracy. A blood pressure estimation device (101) has: a pulse wave calculation unit (102) for, on the basis of a pressure signal in a specific period and a pulse wave signal (2001) measured on the basis of the pressure of the pressure signal in the specific period, calculating a plurality of times at which a pulse signal satisfies prescribed conditions, a period representing the difference between the times, and a pressure value of the pressure signal during the period, and also calculating pulse wave information associating the period and the pressure value; and a blood pressure estimation unit (103) for estimating the blood pressure of the pulse wave signal (2001) on the basis of the pulse wave information.

Abstract: It is an object of the present invention to provide a thermoplastic adhesive sheet excellent in initial adhesiveness to an imide group-containing resin compounded with a filler and also excellent in electrolyte-resistance adhesiveness, and the object is achieved by a thermoplastic adhesive sheet that has a functional group introduced into a surface by surface modification and that is bonded to an imide group-containing resin compounded with a filler. The functional group is preferably at least one selected from the group of a hydroxyl group, a carboxyl group, a carbonyl group, a maleic anhydride group, a fumaric anhydride group, a maleimide group, a fluorosulfuryl group, a metallic base of a sulfonate group, and a sulfonate group.

Abstract: Provided are a vibration detector and a vibration detecting method, which are power saving, can detect vibration even if the vibration is very weak, and can perform both start-up of the apparatus and collection of data of vibration information by the use of only one sensor. The apparatus includes a vibration detector, a semiconductor switch, a controller and a power supply. The semiconductor switch and the controller are connected to the power supply. The vibration detector detects vibration and consequently generates a vibration voltage. The semiconductor switch includes a voltage divider for generating a bias voltage inside. The semiconductor switch detects a voltage produced by superposing the bias voltage onto the vibration voltage outputted from the vibration detector, and conducts current when the detected voltage is equal to or larger than a certain value. The controller wakes up with the current conducted by the semiconductor switch as a trigger signal.

Abstract: In a cleaning blade 1 having an elastic body 11, which is a molded article of a rubber material, the elastic body 11 having at least a surface-treated layer 12 formed at least on an abutting part with an object of contact, the surface-treated layer 12 is formed by impregnating the elastic body 11 with a surface treatment liquid which contains a bi-functional isocyanate compound, a tri-functional polyol, and an organic solvent, or with a surface treatment liquid which contains an organic solvent and an isocyanate-group-containing compound having an isocyanate group yielded through reaction between the bi-functional isocyanate compound and the tri-functional polyol, followed by curing; the ratio between an isocyanate group contained in the bi-functional isocyanate compound and a hydroxyl group contained in the tri-functional polyol (NCO group/OH group) is 1.0 to 1.5; and the surface-treated layer has a thickness of 10 ?m to 100 ?m.

Abstract: A semiconductor memory device capable of improving a read characteristic of a sense amplifier and a stored data read method are provided. The semiconductor memory device includes a sense amplifier and a controller. The sense amplifier has a first transistor that clamps a voltage of a bit line, a second transistor that is provided between a voltage node clamped by the first transistor and a reference voltage node, and a third transistor that is inserted between a charge/discharge node and the voltage node clamped by the first transistor. In a first operation mode, the controller turns on the first transistor and the second transistor and turns off the third transistor. In the second operation mode, the third transistor is turned on and in the third operation mode, the first transistor is turned on, the second transistor is turned off, the third transistor is turned on, and the fourth transistor is turned on.

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a voltage wire disposed on the substrate, a gate insulating layer disposed on the first gate electrode and the voltage wire, a semiconductor pattern including an oxide semiconductor material disposed on the gate insulating layer, a source electrode and a drain electrode disposed at a distance from each other on the semiconductor pattern, a first passivation layer disposed on the source electrode and the drain electrode, and a first electrode disposed on the first passivation layer and connected with the voltage wire.

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a voltage wire disposed on the substrate, a gate insulating layer disposed on the first gate electrode and the voltage wire, a semiconductor pattern including an oxide semiconductor material disposed on the gate insulating layer, a source electrode and a drain electrode disposed at a distance from each other on the semiconductor pattern, a first passivation layer disposed on the source electrode and the drain electrode, and a first electrode disposed on the first passivation layer and connected with the voltage wire.

Abstract: A rubber-metal laminated gasket material comprising a metal plate, a surface treating agent layer, an adhesive layer, and a rubber layer, the layers being sequentially laminated on the metal plate; wherein the surface treating agent layer is formed by applying a surface treating agent so that the coating amount on one surface is 30 to 1,000 mg/m2, and the surface treating agent is free from chromium, has a mixing ratio of 20 to 90 wt. % of a fluorine-free titanium compound and 10 to 80 wt. % of alumina, and has a metal titanium content of 1 to 20 wt. %. The rubber-metal laminated gasket material has excellent LLC resistance under high temperature conditions.

Abstract: Provided are a blood pressure estimation device, and the like, the device being capable of accurately estimating blood pressure. The blood pressure estimation device includes a blood pressure estimation unit which estimates a blood pressure on the basis of a pressure in a specific time period and differences between a plurality of pulse wave signals measured in the specific time period due to the pressure.

Abstract: A cleaning blade (1) having an elastic body (11) molded from a rubber base material, and having at least a surface treatment layer (12) on the area of the elastic body (11) that is brought into contact with a body to be contacted, wherein the surface treatment layer (12) is formed by impregnating the surface layer portion of the elastic body (11) with a surface treatment liquid containing an isocyanate compound and an organic solvent and hardening the liquid. The elasticity modulus of the surface treatment layer (12) is 40 MPa or less, the elasticity modulus of the elastic body (11) is 3-20 MPa, and the difference between the elasticity modulus of the surface treatment layer (12) and the elasticity modulus of the elastic body (11) is 1 MPa or more.

Abstract: In a cleaning blade 1 having an elastic body 11, which is a molded article of a rubber material, the elastic body 11 having at least a surface-treated layer 12 formed at least on an abutting part with an object of contact, the surface-treated layer 12 is formed by impregnating the elastic body 11 with a surface treatment liquid which contains a bi-functional isocyanate compound, a tri-functional polyol, and an organic solvent, or with a surface treatment liquid which contains an organic solvent and an isocyanate-group-containing compound having an isocyanate group yielded through reaction between the bi-functional isocyanate compound and the tri-functional polyol, followed by curing; the ratio between an isocyanate group contained in the bi-functional isocyanate compound and a hydroxyl group contained in the tri-functional polyol (NCO group/OH group) is 1.0 to 1.5; and the surface-treated layer has a thickness of 10 ?m to 100 ?m.

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a voltage wire disposed on the substrate, a gate insulating layer disposed on the first gate electrode and the voltage wire, a semiconductor pattern including an oxide semiconductor material disposed on the gate insulating layer, a source electrode and a drain electrode disposed at a distance from each other on the semiconductor pattern, a first passivation layer disposed on the source electrode and the drain electrode, and a first electrode disposed on the first passivation layer and connected with the voltage wire.

Abstract: A silicone rubber-fluororesin laminate comprising a substrate, and a vulcanized silicone rubber layer and a fluororesin layer that are sequentially formed on the substrate; wherein the fluororesin layer is formed after an epoxy resin-containing silane based primer layer and a fluororesin based primer layer are sequentially formed on the vulcanized silicone rubber layer, and the epoxy resin-containing silane based primer layer contains 30 to 80 wt % of an epoxy resin and 70 to 20 wt % of a silane coupling agent. The silicone rubber-fluororesin laminate does not cause a reduction not only in the initial adhesion, but also in the adhesion between the vulcanized silicone rubber and the fluororesin even in a heated environment, such as a hot state or long-term heating.

Abstract: A nitrile rubber-metal laminated gasket material comprising a surface-treating agent layer, an adhesive layer, and a rubber layer, which are sequentially laminated on a metal plate, wherein the surface-treating agent layer is formed using a surface-treating agent that is free from chromium and comprises of (A) a urethane resin or phenolic resin, (B) a silicon-containing compound, and (C) a fluorine-free zirconium compound or fluorine-free titanium compound as essential components. The nitrile rubber-metal laminated gasket material has excellent LLC resistance and oil resistance under high temperature, although it uses a surface-treating agent for metal, which is free from chromium and fluorine.

Abstract: A semiconductor memory device capable of improving a read characteristic of a sense amplifier and a stored data read method are provided. The semiconductor memory device includes a sense amplifier and a controller. The sense amplifier has a first transistor that clamps a voltage of a bit line, a second transistor that is provided between a voltage node clamped by the first transistor and a reference voltage node, and a third transistor that is inserted between a charge/discharge node and the voltage node clamped by the first transistor. In a first operation mode, the controller turns on the first transistor and the second transistor and turns off the third transistor. In the second operation mode, the third transistor is turned on and in the third operation mode, the first transistor is turned on, the second transistor is turned off, the third transistor is turned on, and the fourth transistor is turned on.

Abstract: Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG?VON1×C1/(C1+C2) to the second conductive layer.

Abstract: In general, according to one embodiment, a semiconductor memory device includes a first transistor, a plurality of memory cells and a controller. One end of the first transistor is electrically connected to a first power supply. The plurality of memory cells are electrically connected between other end of the first transistor and a second power supply. The controller is configured to apply a first voltage to a gate of the first transistor when reading data from a selected memory cell. The controller is configured to make the first voltage progressively-increasing.

Abstract: A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.