Abstract: A semiconductor memory device includes a memory cell array, a page buffer, a data line pair, a differential amplifier and a precharger. The memory cell array includes a plurality of pages in which a plurality of memory cells are arranged. The page buffer is formed adjacent to the memory cell array, and includes a plurality of sense amplifiers configured to temporarily hold page data read from the memory cells in the page. The data line pair is arranged in the page buffer and is connected to the sense amplifiers. The differential amplifier is configured to amplify a potential difference between lines of the data line pair. The precharger is configured to precharge the data line pair to a predetermined potential. At least one of the differential amplifier and the precharger is formed in the page buffer, and the at least one circuit is electrically connected to the data line pair.

Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

Abstract: A light emitting display device using a drive circuit formed of only unipolar thin film transistors, which suppresses effects of characteristic shifts of transistors, and is applicable to large, high-resolution light emitting displays. The device includes a pixel having an organic EL device (LED) and a drive circuit thereof. In a current writing period, the drive circuit sets TFT3, TFT4 and TFT5 ON and sets a ground line and one end of LED to the same voltage through TFT3. A current from a data line is supplied to transistors L-TFT and D-TFT forming a current mirror circuit through TFT4 and TFT5, and a voltage between gate and source terminals of L-TFT and D-TFT is retained in a capacitor. During a LED driving period, TFT3, TFT4 and TFT5 are interrupted, and a current flowing between the source and drain of D-TFT is supplied to LED according to the retaining voltage.

Abstract: [Problems] To provide a novel compound having a high carrier mobility and is useful as a charge transporting agent which not only makes it possible to stably form a photosensitive layer without precipitating crystals or without developing pinholes when the photosensitive layer is being formed but also makes it possible to form an organic photosensitive material for electrophotography of a high sensitivity and a low residual potential. [Means for Solution] An indole derivative represented by the following general formula (1), wherein R1 and R2 are alkyl groups, k is an integer of 0 to 3, j is an integer of 0 to 4, a ring Z is a 5- to 6-membered ring and is, specifically, a cyclopentane ring, and X1 and X2 are hydrocarbon groups having at least one ethylenically unsaturated bond.

Abstract: Stress concentration at the connecting portion of the electronic component and the curved board and the area around the connecting portion is suppressed. In a flexible wiring board, insulation layers (11, 13) and wiring layers (12, 15) are piled up alternately and wiring layers (12, 15) are via-connected each other. The board comprises reinforced area (10a) reinforced against external stress, bending area (10c) bending easier than the reinforced area (10a) by external stress, and a stress relaxation area (10b) provided in area between the reinforced area (10a) and the bending area (10c), bending easier than the reinforced area (10a) but not easier than the bending area (10c) by the external stress, and relaxing the stress carried from the bending area (10c) to the reinforced area (10a).

Abstract: An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another.

Abstract: An object of the invention is to provide a photoreceptor for electrophotography which has a low residual potential in an initial stage, is inhibited from increasing in residual potential, is prevented from decreasing in charge potential, undergoes little fatigue deterioration even upon repeated use, and is less apt to pose a problem concerning toxicity or environmental pollution. The invention relates to a photoreceptor for electrophotography which has a photosensitive layer containing an aromatic hydroxycarboxylic acid metal complex represented by the following general formula (1): and one or more charge-transporting agents each having an arylaminophenyl group in the molecule.

Abstract: In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm?2eV?1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

Abstract: According to one embodiment, a threshold detecting method for detecting threshold values of nonvolatile semiconductor memory cells comprises applying a preset voltage to a word line connected to the memory cells, and performing bit-line sense at two different timings during discharging of one of a bit line connected to the memory cells and a node corresponding to the bit line, while a potential of the word line is kept constant.

Abstract: A pixel circuit and an image display apparatus are provided making use of a hysteresis characteristics of a transistor for driving a display element. The pixel circuit comprises: a transistor providing both different first and second relations between a gate voltage value and a drain current value at a transition from off state to an on state, and from the on state transits to the off state respectively; a display element supplied as a drive current with a current controlled by the transistor; and a capacitor element connected to a gate electrode of the transistor. One of the first and second relations is utilized during a first period for setting the drive current to be supplied to the display element. And, the other of the first and second relations is utilized during a second period for supplying the drive current to the display element to effect light emission.

Abstract: An object of the present invention is to allow stress that may be applied to a semiconductor package to be suppressed, when the semiconductor package is mounted on a curved board. In a mount board 1, a semiconductor package 20 is mounted on a curved board 10 including a curved surface on at least a portion thereof. The curved board 10 includes a pedestal portion 13a disposed on a region of the curved surface portion where the semiconductor package 20 is mounted and having an upper surface thereof formed flat, and a plurality of pad portions 15a disposed on the flat surface of the pedestal portion 13a. The pedestal portion 13a is formed of an insulating material. The semiconductor package 20 is mounted on the pad portions 15a.

Abstract: A drive circuit for a light emitting display apparatus including a pixel circuit having a light emitting device for emitting a light having brightness determined based on supplied current and a drive transistor for supplying the current to the light emitting device, comprises a threshold value correction circuit converting a second signal including a threshold voltage of the drive transistor and a data voltage, the second signal being output from the drive transistor when a first signal including the data voltage is input into the control electrode of the drive transistor, into a third signal including the threshold voltage of an inverted polarity and the data voltage or a voltage corresponding to the data voltage, to output the converted third signal to the pixel circuit. The pixel circuit includes a switch for supplying the third signal to the control electrode of the drive transistor.

Abstract: According to one embodiment, a semiconductor memory device includes memory cells, holding circuits, and a logical gate chain. The memory cells are associated with columns. The holding circuits are associated with the columns and capable of holding first information indicating whether associated one of the columns is a verify-failed column or not. The logical gate chain includes a plurality of first logical gates associated with the columns and connected in series. Each of the first logical gates outputs a logical level to a next-stage first logical gate in a series connection. The logical level indicates whether the verify-failed column exists or not based on the first information in associated one of the holding circuit. The content indicated by the logical level output from each of the first logical gates is inverted using one of the first logical gates associated with the verify-failed column as a border.

Abstract: An object of the present invention is to provide an electrophotographic photoreceptor which is not impaired in electrophotographic properties such as charge potential and residual potential and which is also excellent in repetition stability. The invention relates to an electrophotographic photoreceptor including a conductive support having thereon a photosensitive layer containing a zirconium compound represented by the following general formula (1): and one or more charge transport agents having an arylamino group in its molecule.

Abstract: A drive circuit for a light emitting display apparatus including a pixel circuit having a light emitting device for emitting a light having brightness determined based on supplied current and a drive transistor for supplying the current to the light emitting device, comprises a threshold value correction circuit converting a second signal including a threshold voltage of the drive transistor and a data voltage, the second signal being output from the drive transistor when a first signal including the data voltage is input into the control electrode of the drive transistor, into a third signal including the threshold voltage of an inverted polarity and the data voltage or a voltage corresponding to the data voltage, to output the converted third signal to the pixel circuit. The pixel circuit includes a switch for supplying the third signal to the control electrode of the drive transistor.

Abstract: Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG?VON1×C1/(C1+C2) to the second conductive layer.

Abstract: A vulcanizable adhesive composition, which comprises 45-75% by weight of phenol resin, preferably a mixture of novolak-type and resol-type phenol resins, 5-25% by weight of halogenated polymer, and 10-30% by weight of a metal oxide, can improve an interlayer adhesiveness between the acrylic rubber and metal without surface treatment of metal, such as a chemical treatment, e.g. zinc phosphate treatment, etc., blast treatment, or primer treatment, and thus can be effectively used in the production of a metal/adhesive layer/acrylic rubber composite.

Abstract: In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm?2eV?1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

Abstract: The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.

Abstract: An object of the present invention is to provide an electrophotographic photosensitive body which is not impaired in electrophotographic characteristics such as charged potential and residual potential, and which is also excellent in repeating stability. The present invention provides an electrophotographic photosensitive body including a conductive support having thereon a layer containing a specific p-terphenyl compound and at least one additive.