Abstract: The present invention provides a process for producing a hydrazone compound represented by the general formula (5): which comprises a step of condensing a hydrazine compound represented by the general formula (3): with a carbonyl compound represented by the general formula (4): without taking the hydrazine compound out of a reactor. According to the invention, the target hydrazone compound can be obtained in high quality and in a high yield without taking the hydrazine compound out of the reactor at all, the hydrazine compound being a reaction intermediate which is structurally unstable and has a fear of influencing safety of workers owing to its toxicity (mutagenicity).

Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

Abstract: In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.

Abstract: An electronic device comprises an electronic element package and a mounting substrate on which the electronic element package is mounted. The electronic element package has an LGA electrode. The mounting substrate has a through-hole having a conductor which covers an inner wall. The LGA electrode has an area larger than an opening area of the through-hole on a side facing the LGA electrode. The electronic element package is mounted on the mounting substrate so that at least a part of the opening of the through-hole overlaps with the LGA electrode. The LGA electrode and the conductor of the through-hole are electrically connected to a conductive material provided inside the through-hole. In the LGA electrode, at least a part of the region that does not overlap with the opening of the through-hole is joined to the mounting substrate by an adhesive.

Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

Abstract: A nonvolatile semiconductor memory device is provided, which includes an input buffer provided with a first inverter that can electrically adjust circuit threshold values, a circuit: threshold value monitor provided with a second inverter having the same circuit configuration as the first inverter to detect the circuit threshold values of the first inverter when the input and output of the second inverter are short-circuited, respectively, a memory storing parameter values that correspond to the circuit threshold values detected by the circuit threshold value monitor, and a data-reader circuit reading the parameter values given to the first inverter from the memory.

Abstract: When bit lines or sense amplifiers are checked whether they are defective during a test performed to check whether the bit lines are defectively open, an electrical current supplied from one sense amplifier is detected by another sense amplifier. Thus, if plural bit lines are defectively open, they can be detected simultaneously. Consequently, the test time can be shortened greatly.

Abstract: An object of the present invention is to provide an electrophotographic photosensitive body having improved electrophotographic characteristics such as sensitivity and residual potential and also having excellent durability. The present invention provides an electrophotographic photosensitive body having a layer containing at least one specific p-terphenyl compound and at least one polycarbonate resin represented by the general formula (I): in a mass ratio of the p-terphenyl compound to the polycarbonate resin within the range of 2:8 to 7:3.

Abstract: An acrylic rubber-metal composite, which comprises an iron phosphate treated iron-based metal, and an adhesive layer comprising a phenol resin and a metal oxide, and preferably further a halogenated polymer, and an acrylic rubber layer, successively provided on the iron-based metal surface, has not only distinguished initial adhesiveness and water resistance, when the acrylic rubber is bonded to the metal owing to application of the iron phosphate treatment to the metal surface, but also can reduce the abrasion of the mating materials when brought into contact with rubber-unbaked parts of the sheet, because the surface roughness Ra[according to JIS 0601(1994)] of the surface treated steel sheet is 0.6 or less.

Abstract: A primer composition for use as a primer in the production of metal/primer/adhesive/rubber laminates, which comprises 100 parts by weight of polyparavinylphenol and 50-300 parts by weight of an organometallic compound can give distinguished water resistance and acid resistance, when used for vulcanization bonding of a plated steel sheet and unvulcanized rubber or for simple bonding of a plated steel sheet and vulcanized rubber, and metal-rubber laminates produced by using the primer composition can be effectively used as rubber-metal integrated type gaskets, particularly fuel cell gaskets, HDD cover gaskets (metallic separator-integrated type gaskets), etc.

Abstract: The present invention provides p-terphenyl compounds represented by the following general formula (1) and (2): and an electrophotographic photoconductor containing the compound. According to the invention, a charge transporting agent having improved solubility in an organic solvent and an electrophotographic photoconductor excellent in drift mobility and having high sensitivity and high durability are provided.

Abstract: In a D/I conversion section of the semiconductor device for driving a light emission display device, a precharge circuit is provided at the rear of each 1-output D/I conversion section. A precharge signal PC is input into the precharge circuit. The D/I conversion section has two output blocks internally thereof, and a role for storing and outputting current is changed every frame to enable securing a period for driving a pixel longer. Further, at the time of driving, in the precharge circuit, current driving is carried out after a voltage corresponding to output current has been applied to the pixel, and therefore, the pixel can be driven at high speed. Thereby, output current of high accuracy can be supplied to digital image data to be input, and even where an output current value is low, the current load device can be driven at high speed.

Abstract: An object of the present invention is to provide an electrophotographic photosensitive body having improved electrophotographic characteristics such as sensitivity and residual potential and also having excellent durability. The present invention provides an electrophotographic photosensitive body having a layer containing at least one specific p-terphenyl compound and at least one polycarbonate resin represented by the general formula (I): in a mass ratio of the p-terphenyl compound to the polycarbonate resin within the range of 2:8 to 7:3.

Abstract: A step-down circuit generates a second power supply lower than a first power supply. The step-down circuit includes an output terminal connected to a load circuit, an output transistor connected between the first power supply and the output terminal, and having a gate terminal connected to a first node, a monitor transistor connected between the first power supply and a second node, and having a gate terminal connected to the first node, and a feedback circuit which sets a gate voltage of the output transistor in accordance with a difference between a voltage obtained by dividing a voltage of the second node and a reference voltage. A size of the monitor transistor is changed in accordance with an operation mode of the load circuit.

Abstract: In a light-emitting display apparatus including a plurality of pixels each including a light-emitting element and a driving circuit of the light-emitting element, and the driving circuit includes a plurality of thin-film transistors connected in parallel, a threshold voltage of the thin-film transistor reversibly changes according to a voltage applied between a gate and a source or between the gate and a drain of each of the thin-film transistors, by selecting and switching the plurality of thin-film transistors TFT11 to TFT13, the threshold voltage of the thin-film transistors for supplying a current to the light-emitting element is held within a predetermined range.

Abstract: A semiconductor memory device includes a memory cell array, a page buffer, a data line pair, a differential amplifier and a precharger. The memory cell array includes a plurality of pages in which a plurality of memory cells are arranged. The page buffer is formed adjacent to the memory cell array, and includes a plurality of sense amplifiers configured to temporarily hold page data read from the memory cells in the page. The data line pair is arranged in the page buffer and is connected to the sense amplifiers. The differential amplifier is configured to amplify a potential difference between lines of the data line pair. The precharger is configured to precharge the data line pair to a predetermined potential. At least one of the differential amplifier and the precharger is formed in the page buffer, and the at least one circuit is electrically connected to the data line pair.

Abstract: The present invention provides p-terphenyl compounds represented by the following general formula (1) and (2): and an electrophotographic photoconductor containing the compound. According to the invention, a charge transporting agent having improved solubility in an organic solvent and an electrophotographic photoconductor excellent in drift mobility and having high sensitivity and high durability are provided.

Abstract: To provide a light emitting apparatus in which high definition can be realized and the connection reliability of a wiring portion is excellent, the light emitting apparatus includes: a substrate; a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on the substrate in the stated order; and a thin film transistor which is of an n-type and includes a channel layer and a drain electrode, the light emitting element and the thin film transistor are arranged in parallel and in contact with the substrate, the channel layer of the thin film transistor has a field effect mobility equal to or larger than 1 cm2V?1s?1, and the second electrode is connected with the drain electrode of the thin film transistor.

Abstract: An object of the invention is to provide a photoreceptor for electrophotography which has a low residual potential in an initial stage, is inhibited from increasing in residual potential, is prevented from decreasing in charge potential, and undergoes little fatigue deterioration even upon repeated use. The invention relates to a photoreceptor for electrophotography which has a photosensitive layer containing a cyclic phenol sulfide represented by the following general formula (1): and one or more charge-transporting agents each having an arylamino group in the molecule, and which has excellent durability.

Abstract: An active matrix display apparatus including a transistor 20, a storage capacitor 30 and a light-emitting element 40, which are formed on a substrate 10. The transistor 20 has a source electrode 21, a drain electrode 22 and a gate electrode 23. The storage capacitor 30 has a multilayered structure of a first electrode 31, a dielectric layer 32 and a second electrode 33 stacked in this order on the substrate 10. The light-emitting element 40 has a multilayered structure of a third electrode 41, a light-emitting layer 42 and a fourth electrode 43 stacked in this order on the substrate 10. The first electrode 31 is connected to the gate electrode 23, and at least a part of the storage capacitor 30 is disposed between the substrate 10 and the light-emitting element 40. All of the substrate 10, the first electrode 31, second electrode 33 and the third electrode 41 are formed from a material transmitting a visible light.