Abstract: In a fuel injection pump, flat sections are provided around a connecting segment located between an inner wall surface of a pump housing defining a fuel pressurizing chamber and an inner wall surface of a fuel intake passage as well as a connecting segment located between the wall surface of the pump housing and an inner wall surface of a fuel discharge passage 15 to spread stresses concentrated in upper and lower intersecting points of each connecting segment over an entire periphery of the connecting segment. As a result, the strength of the fuel injection pump is improved to allow use of higher fuel injection pressures. Furthermore, the strength of the fuel injection pump is improved without increasing a wall thickness of the pump housing, so that a size of the fuel injection pump is not increased.

Abstract: The object of the present invention is to provide a non-aqueous electrolyte secondary battery which uses a lithium-manganese oxide as an cathode material but, suppressing deterioration of an cathode material and a crystalline structure caused by charge/discharge cycles, exhibits an excellent discharge load property and an excellent cycle property. The present invention also provides a method for producing an cathode material which realizes the non-aqueous electrolyte secondary battery.

Abstract: An optical pick-up according to the present invention is designed such that laser beams having different polarization directions or different radiation angles are irradiated from laser beam sources formed in a surface emitting laser array to change the effective numerical aperture of an optical element having an objective lens, or the like. An optical pick-up having high capability with an optical disk having a low recording density and a thick substrate according to the CD standard, and an optical disk having a high recording density and a thin substrate according to the DVD standard, can be realized. A plurality of laser beam sources can be formed in a small space by employing a surface emitting laser array, and the numerical aperture of the optical system can be controlled by selecting a laser beam. For this reason, an optical pick-up having compatibility can be realized with an extremely simple arrangement, and a compact and high-performance optical pick-up can be provided at low cost.

Abstract: A surface emission type semiconductor laser having an optical detector which can satisfactorily assure both the laser emission characteristics of the photoemitter and the optical-to-electrical conversion efficiency. The laser comprises a first conducting semiconductor layer and a second conducting semiconductor layer formed on first and second regions of a semiconductor substrate. Over the second conducting semiconductor layer on the first region is formed an optical resonator which emits light perpendicular to the plane of the semiconductor substrate. On the second region, at least one photodiode is formed by the first and second conducting semiconductor layers. On the first region the second conducting semiconductor layer is formed with a thickness of at least 1 .mu.m, and is used as a lower electrode for supplying a current to the optical resonator. On the second region, the second conducting semiconductor layer forming the at least one photodiode is formed with a thickness of less than 1 .mu.

Abstract: An optical film thickness measurement method and film formation method uses a method of measuring the optical thickness of films by radiating a monitor light beam towards a substrate during the formation of a stack of films on the substrate and measuring the optical film thickness from extreme values in the resultant reflection intensity. This stack of films comprises a first film having a reflectance of at least 98% within a predetermined wavelength range and a second film formed on the first film and having an absorption coefficient of 1000 cm.sup.-1 or less within that predetermined wavelength range. The first film is measured by a first monitor light beam having a predetermined wavelength and the second film is measured by a second monitor light beam having a wavelength that differs from the predetermined wavelength range.

Abstract: A surface emitting semiconductor laser, with a resonator cavity transverse to the planar extent of the deposited layers, is provided with a first reflection mirror on the substrate side composed of alternating layers comprising a first layer that is made of a Group III-V compound semiconductor and a second layer that is made of a Group III-V compound semiconductor with an energy bandgap that is larger than that of the first layer. A second reflection mirror is provided at the opposite end of the cavity adjacent to a column like resonator portion. At least the first reflection mirror comprises a distributive Bragg reflection (DBR) multiple layer mirror that has an interface region between first and second layers having a carrier concentration that is higher than that of other regions. The column like resonator portion is surrounded by a buried layer which may consist of two layers, the first layer functioning as barrier layer and the second layer functioning as a flattening layer.

Abstract: A surface emission type semiconductor laser has insulation layers (107, 108) embedding separation grooves for partially separating the waveguide path in an optical resonator formed by a pair of reflecting mirrors, namely a distributed reflection type multilayer film mirror (104) and a dielectric multilayer film mirror (111), and a quantum well active layer (105).A surface emission type semiconductor laser is designed such that the lasing wavelength .lambda..sub.G of an edge emission type semiconductor laser having the same semiconductor layers as those of the optical resonator is set to be shorter than a desired lasing wavelength .lambda..sub.EM of the surface emission type semiconductor laser by a given differential wavelength (gain offset) .DELTA..lambda..sub.EM.

Abstract: In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof.

Abstract: In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof.

Abstract: A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a buried layer surrounding the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said omitted laser beam is parallel to the direction of said shorter sides.

Abstract: A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portions. "Lattice mismatch ratio" between the II-VI group compound semiconductor epitaxial layer and the column-like portions is no more than 0.2%, or more preferably no more than 0.16%. The II-VI group compound semiconductor layer is formed from an adduct consisting of II group organometallic compound and VI group organometallic compound and a VI group hydride by the use of a chemical vapor deposition.

Abstract: A surface emitting semiconductor laser is provided with at least reflection mirrors on the substrate side composed of a first layer that is made of a Group III-V compound semiconductor and a second layer that is made of a Group III-V compound semiconductor with an energy bandgap that is larger than that of the first layer. The first and second layers are alternately stacked. The semiconductor laser is also composed of a distributive reflection multiple layer mirror that has an interface region between first and second layers having a carrier concentration that is higher than that of other regions. As a result, the multiple layer band structure of the distributive reflection mirror has been improved, current easily flows vertically through the multiple layers and the element resistance is low.

Abstract: A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.

Abstract: A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portions. The II-VI group compound semiconductor layer is formed from an adduct consisting of II group organometallic compound and VI group organometallic compound and a VI group hydride by the use of a chemical vapor deposition. If a plurality of column-like portions are to be formed by a separation groove, these column-like portions are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.

Abstract: A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said emitted laser beam is parallel to the direction of said shorter sides.

Abstract: A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.

Abstract: A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like semiconductor layer. The semiconductor laser also includes an exit-side electrode which is formed in contact with a contact layer of the column-like semiconductor layer which has an opening used to form an exit port. The opening is formed in the exit-side electrode at a position including the geometric center of the contact layer and ranging between 10% and 90% of the surface area of the contact layer.

Abstract: A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like light emitting portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. An active layer of multi-quantum well structure is further formed on the layer section of the cladding layer having the column-like portion. If a plurality of column-like portions are formed, these column-like portions are separated from one another by a separation groove terminating short of the active layer, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.

Abstract: A film of an element is deposited on a semiconductor substrate by passing on the substrate gas containing the element and then irradiating a predetermined portion of the substrate with an electron beam. Then, the gas is decomposed to deposit the element on the substrate so as to form a pattern. By heating the pattern, the element is diffused into the surface of the substrate thus forming a diffused region. The gas is generated by sublimating solid Cr(C.sub.6 H.sub.6).sub.2, Mo(C.sub.6 H.sub.6).sub.2, Mo(C.sub.6 H.sub.6).sub.2, Al(CH.sub.3).sub.3, WCl.sub.6 etc.

Abstract: A color picture is separated into three color component pictures, which are divided respectively by first, second and third block coding means into blocks and encoded. In the first block coding means, one of the color component pictures is encoded, for each block, into gray level codes representing gray level components in the block and a resolution code representing the distribution of the gray level codes in the block. In this case, when the gray level in the block undergoes a little change, an average gray level can be used as the gray level code and the resolution code can be omitted. The second and third block coding means may be identical in construction with the first block coding means. The resolution code of the block obtained by the first block coding means can also be employed in the coding of the corresponding blocks by the second and third block coding means.