Abstract: A semiconductor device has first wiring layers 30 and a plurality of dummy wiring layers 32 that are provided on the same level as the first wiring layers 30. The semiconductor device defines a row direction, and first virtual linear lines L1 extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the first virtual linear lines L1. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2 extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the second virtual linear lines L2.

Abstract: A semiconductor storage device showing a good memory characteristic, and a manufacturing method thereof, includes a semiconductor layer, a stacked body including a first insulating layer, a charge trapping layer, and a second insulating layer that are provided above the semiconductor layer, a gate electrode provided above the stacked body, a side wall insulating layer provided at the side of the gate electrode, and impurity regions and provided in the semiconductor layer. The end surface of the stacked body is positioned outside the end surface of the gate electrode.

Abstract: A method, for fabricating a semiconductor device including a memory region and a logic circuit region including a periphery circuit, includes: forming sidewall-like control gates on both side surfaces of a first conductive layer at least in a memory region with an ONO film interposed therebetween, respectively; patterning a first conductive layer in a logic circuit region and thereby forming a gate electrode of a MOS transistor; forming a second insulating layer above the control gates; applying anisotropic etching to the second insulating layer, and thereby at least partially exposing the control gates; and on the exposed surfaces of the control gates, forming a silicide layer.

Abstract: A fuel filter is located downstream of a feed pump to filter fuel discharged from the feed pump. An orifice is located between the fuel filter and a suction quantity control valve to restrict a flow rate of the fuel passing through the fuel filter. A positive pressure of the feed pump is applied to the fuel filter, and a passing pressure at the fuel filter increases. Even if viscosity of the fuel increases and the fuel becomes wax-like at low temperature, clogging of the fuel filter or an insufficient flow rate can be inhibited. The orifice restricts the flow rate of the fuel passing through the fuel filter. Accordingly, an increase in size of the fuel filter can be prevented even if the fuel filter is located downstream of the feed pump.

Abstract: An oil supply means is provided to supply the center portion of a rotating part of an Oldham coupling with oil. The oil spreads from the center of rotation to the outside of the Oldham coupling and makes it possible to prevent the Oldham coupling from wearing. A recess is also provided to direct the oil supplied from an engine to the inward portion of the Oldham coupling. Accordingly, the oil is supplied all over an Oldham projection so that it is possible to prevent the frictional wearing of the Oldham projection disposed inside the Oldham coupling.

Abstract: A spool valve is movably provided in a valve sliding space of a valve casing. The spool valve has a through-hole formed in the inside thereof, and a communication port formed in the spool valve is operatively communicated with a fluid port for controlling an opening area of the fluid port by moving within the valve sliding space. Multiple circular oil grooves are formed at an outer peripheral surface of the spool valve, into which high pressure fluid is supplied so that the spool valve can be smoothly moved in the valve sliding space.

Abstract: A method for generating mask data that is used for a method of manufacturing semiconductor devices is provided. The semiconductor device includes wiring layers disposed in a specified pattern on a base and stress relieving layers disposed in a specified pattern over the base. The method for generating mask data comprises a step of forming resized patterns 130 by resizing wiring layer patterns 120 with a positive (+) resizing amount, a step of deleting, among the resized patterns 130, resized patterns having portions that mutually overlap, and a step of forming stress relieving layer patterns having a specified width outside the resized patterns.

Abstract: A semiconductor device 100 includes wiring layers 12 disposed in a specified pattern on a base 10, and an interlayer dielectric layer 20 that covers the wiring layers 12. The interlayer dielectric layer 20 includes a stress relieving dielectric layer 22 disposed in a specified pattern on the base 10, and a planarization dielectric layer 26 that covers the wiring layers 12 and the stress relieving dielectric layers 22, and is formed from a liquid dielectric member. The interlayer dielectric layer 20 may further include a base dielectric layer 24 and a cap dielectric layer 28.

Abstract: A semiconductor device has first wiring layers 30 and a plurality of dummy wiring layers 32 that are provided on the same level as the first wiring layers 30. The semiconductor device defines a row direction, and first virtual linear lines L1 extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the first virtual linear lines L1. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2 extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the second virtual linear lines L2.

Abstract: The present invention is to provide a free-cutting steel capable of suppressing production of coarse inclusions, and having a high fatigue strength and a desirable machinability. The free-cutting steel aimed at solving the foregoing problems consists essentially of, in % by mass, C: 0.1-0.5%, Si: 0.05-2.5%, Mn: 0.1-3.5%, S: 0.0005-0.004%, Al: 0.01-0.06%, Ti: 0.003-0.01%, O: up to 0.0015%, N: 0.003-0.01%, Bi: 0.015-0.025%, and the balance of Fe and inevitable impurities, wherein the formula (1) below is satisfied: ?4.8?log(([N]?0.0015)×[Ti]0.98)??4.3??formula (1).

Abstract: A semiconductor device has first wiring layers 30 and a plurality of dummy wiring layers 32 that are provided on the same level as the first wiring layers 30. The semiconductor device defines a row direction, and first virtual linear lines L1 extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the first virtual linear lines L1. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2 extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the second virtual linear lines L2.

Abstract: A semiconductor device may include a fuse section 110 in which a plurality of fuses 20 to be fused by irradiation of a laser beam are formed. The fuses 20 are arranged at a pitch X, and an insulation layer 36 having a specified film thickness covers upper portions of the fuses 20. The fuses 20 may have a width W and a film thickness T that have a relation indicated by the following equation: T?0.4/W. Furthermore, the width W of the fuse 20 may be 3 ?m or less, and may be less than ½ of the pitch X of the fuses 20. Also, the film thickness of the fuse 20 may be 0.7 ?m or less.

Abstract: A semiconductor storage device showing a good memory characteristic, and a manufacturing method thereof, includes a semiconductor layer, a stacked body including a first insulating layer, a charge trapping layer, and a second insulating layer that are provided above the semiconductor layer, a gate electrode provided above the stacked body, a side wall insulating layer provided at the side of the gate electrode, and impurity regions and provided in the semiconductor layer. The end surface of the stacked body is positioned outside the end surface of the gate electrode.

Abstract: The present invention provides a simple and quick method for determining the nucleotide sequence of the mitochondrial 21S ribosomal RNA gene of Saccharomyces cerevisiae by gene amplification technique, and a method for classifying Saccharomyces cerevisiae strains using the same nucleotide sequence. To achieve this object, the mitochondrial 21S ribosomal RNA gene of Saccharomyces cerevisiae is amplified by gene amplification technique, thereby determining the nucleotide sequence of the gene.

Abstract: In a fuel injection pump, a helical gear is attached to an end of a camshaft and rotatable with the camshaft. The camshaft is biased in one axial direction thereof by a driving force that the helical gear receives from an engine crankshaft. A disk is provided in a position of the camshaft extending forward from a cam to the direction in which the camshaft is biased. An axial movement of the disk is restricted via a washer by an end of a bearing cover. The disk is formed in the same axis to a portion of the camshaft that is held by a journal bearing. An outer diameter of the disk is larger than that of the cam. An area where the disk and the washer are in sliding contact with each other is relatively large and the sliding regions thereof are constant so that hammer noises are prevented and frictional wear thereof are limited.

Abstract: In a fuel injection pump, a casing fixed to a housing has a pump room and a filter room mostly separated from but partly communicating with the pump room. A feed pump is constituted by the pump room where a feed pump mechanism is connected to an axial end of the drive shaft. A filter element is accommodated in the filter room. A casing cover easily attachable and detachable to the casing has a fuel inlet port through which fuel is sucked to the filter room and, then, flows via the filter element into the pump room where the fuel is pressurized according to rotation of the drive shaft. Accordingly, foreign material contained in fuel is eliminated before entering the pump room. Further, fuel flow area of the fuel element is larger than that of the fuel inlet port, resulting in less pressure loss of fuel passing through the filter element even if mesh size of filter element is smaller.

Abstract: A rotation-to-linear motion transforming mechanism equipped with a safeguard is provided. The mechanism includes an eccentric cam coupled to a torque input shaft, a cam ring placed in contact of an inner wall thereof with the eccentric cam, and a plunger placed to be movable linearly following rotation of the cam ring. The safeguard is provided in the cam ring which is responsive to application of an excessive torque to the cam ring to break the cam ring, thereby interrupting transmission of torque to the plunger from the torque input shaft. This avoids breakage of the plunger or the whole of the rotation-to-linear motion transforming mechanism. A fuel injection pump equipped with such a safeguard is also provided.

Abstract: A low-pressure fuel supplying system (5), a fuel supply control system (6) and a high-pressure fuel discharging system (3) are independently provided as separate pieces, and the low-pressure fuel supplying system (5), the fuel supply control system (7) and the high-pressure fuel discharging system (3) are connected by a fuel pipe. As the high-pressure fuel discharging system (3) is small, relative to a fuel injection pump, it is easier to provide a space for mounting the high-pressure fuel discharging system (3) in the vicinity of the engine. On the other hand, as the low-pressure fuel supplying system (5) and the fuel supply control system (7) have no restriction regarding mounting position, they can be mounted in any empty space in an engine room. Accordingly, the high-pressure fuel supplying apparatus has enhanced mountability on a vehicle.

Abstract: A fuel injection pump has a drive shaft. A cam rotates together with the drive shaft. A plurality of plungers, slidably supported by a pump housing and driven by the cam, reciprocate in accordance with rotation of the cam to pressurize the fuel introduced in a fuel pressurizing chamber. The pressurized fuel is fed to an accumulator via a fuel feed passage formed in the pump housing. A pipe joint portion is integrally formed with the pump housing and is directly connected to a piping member of the accumulator.

Abstract: An alkaline battery constructed of a cathode can and an anode cup in such a way that an open end of the cathode can is sealed by the anode cup, with a gasket interposed between them, characterized in that the open end of the anode cup is folded back in U-shape along its periphery and the fold is tightened for hermetic sealing by the internal periphery of the open end of the cathode can, with the gasket interposed between them, the anode cup has a higher hydrogen over potential material coating layer formed in a limited region on the inside thereof excluding the bottom of the U-shaped fold and the outer periphery of the fold, the cathode can contains the cathode active material and silver-nickelite (AgNiO2), the anode cup contains the anode mix which is mercury-free zinc or zinc alloy powder as the anode active material.