Abstract: The present invention has an object to provide a small, light-weight, impact-resistant, high-accuracy, and low-cost piezoelectric actuator which can achieve a large displacement at a low drive voltage as well as an information storage device which incorporates the piezoelectric actuator and has high recording density. The piezoelectric actuator according to the present invention is equipped with a hinge plate 220 which has a central portion 221, two lateral portions 222 extending point-symmetrically from both ends of the central portion 221, and two limbs 223 extending point-symmetrically and non-linear symmetrically from both ends of the central portion 221 as well as with a piezoelectric element 210 which brings the two limbs 223 toward and away from each other.

Abstract: The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.

Abstract: There are disclosed a piezoelectric actuator which can obtain large displacement at low voltage, which is small-sized and lightweight, and whose manufacture cost is low, and a small-sized lightweight information storage apparatus in which the piezoelectric actuator is incorporated, and which is provided with a small inertia moment during head driving and a high recording density. A piezoelectric actuator 200 includes a center body 200a and two spiral arms 200b, and two arms 200b are entirely in rotation symmetry and nonlinear symmetry.

Abstract: A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO3, the conductive metal oxide having a (0 0 1) orientated ABO3 type pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABO3 type pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.

Abstract: A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

Abstract: A semiconductor device comprises a carrier substrate, an integrated circuit chip mounted on the carrier substrate via bumps, and a capacitor provided to stabilize operation of the integrated circuit chip at high frequencies. In the semiconductor device, the capacitor is electrically connected to pads on bottom of the integrated circuit chip, and the capacitor is provided to have a height on the carrier substrate that is smaller than or equal to a height of the bumps on the carrier substrate.

Abstract: The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

Abstract: When wire-bonding process is effected, a head assembly is held between a pair of clamp members. A head slider is urged against a microactuator. The urging force is transmitted to the microactuator through second adhesive layers. Since the second adhesive layers are positioned symmetrically around the rotational axis of the head slider, the urging force tends to act along the rotational axis. The microactuator is simultaneously urged against the support member. The urging force is transmitted from a first adhesive layer to the support member. Since the first adhesive layer extends around the rotational axis, the urging force tends to act along the rotational axis. The head slider is thus allowed to keep a uniform attitude. The microactuator is also allowed to keep a uniform attitude. The microactuator is prevented from suffering from substantial bending stresses.

Abstract: There are disclosed a piezoelectric actuator which can obtain large displacement at low voltage, which is small-sized and lightweight, and whose manufacture cost is low, and a small-sized lightweight information storage apparatus in which the piezoelectric actuator is incorporated, and which is provided with a small inertia moment during head driving and a high recording density. A piezoelectric actuator 200 includes a center body 200a and two spiral arms 200b, and two arms 200b are entirely in rotation symmetry and nonlinear symmetry.

Abstract: The present invention comprises the steps of (a) forming a first electrode on a substrate via an adhesion enhancing layer, (b) forming a capacitor insulating film containing a laminated film, in which an amorphous dielectric film and a polycrystalline dielectric film are laminated via a wave-like interface, by forming sequentially and successively the amorphous dielectric film and the polycrystalline dielectric film made of same material on the first electrode, (c) forming a second electrode on the capacitor insulating film, and (d) a step of annealing the capacitor insulating film in an oxygen atmosphere.

Abstract: A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

Abstract: A piezoelectric actuator set includes a pair of elongated piezoelectric actuators. The elongated piezoelectric actuators establish the standard attitude of a head slider when no electric signal is supplied to the piezoelectric actuator set. When the electric signal is applied to the piezoelectric actuator set, the tip ends are pulled back toward the base ends in the elongated piezoelectric actuators. The piezoelectric actuator set generates a couple for driving the head slider for rotation around the rotational axis only in a predetermined direction from the standard attitude. The moment of inertia can be reduced in the head slider during rotation as compared with the case where the head slider is moved based on a swinging movement. The natural frequency can be raised in the vibration system comprising the head slider and the piezoelectric actuator set. The frequency of the electric signal or servo signal can be set over a wider frequency range.

Abstract: A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.

Abstract: The capacitor comprises an lower electrode 22, a dielectric film 30 formed on the lower electrode 22, a floating electrode 20 formed on the dielectric film 30, a dielectric film 50 formed on the floating electrode 40 and having a film orientation different from that of the dielectric film 30, and an upper electrode 80 formed on the dielectric film 50, whereby various characteristics depending on film orientations of the dielectric films can be simultaneously improved.

Abstract: The present invention aims to provide a compact and lightweight piezoelectric actuator, a driving method involving the piezoelectric actuator that can provide a large displacement at a low voltage, and a compact and lightweight information storage device with a high recording density that incorporates such a piezoelectric actuator and has a small moment of inertia of a head when the head is driven. The piezoelectric actuator 110 according to the present invention has four rod-shaped driving sections 111—1, 111—2, 111—3 and 111—4.

Abstract: There are disclosed a piezoelectric actuator which can obtain large displacement at low voltage, which is small-sized and lightweight, and whose manufacture cost is low, and a small-sized lightweight information storage apparatus in which the piezoelectric actuator is incorporated, and which is provided with a small inertia moment during head driving and a high recording density. A piezoelectric actuator 200 includes a center body 200a and two spiral arms 200b, and two arms 200b are entirely in rotation symmetry and nonlinear symmetry.

Abstract: A piezoelectric actuator includes a single-crystal piezoelectric thin film having a crystal orientation aligned with the crystal orientation of a single-crystal Si substrate, and first and second electrode films formed on first and second sides of the single-crystal piezoelectric thin film, respectively.

Abstract: The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.

Abstract: A piezoelectric actuator set includes a pair of elongated piezoelectric actuators. The elongated piezoelectric actuators establish the standard attitude of a head slider when no electric signal is supplied to the piezoelectric actuator set. When the electric signal is applied to the piezoelectric actuator set, the tip ends are pulled back toward the base ends in the elongated piezoelectric actuators. The piezoelectric actuator set generates a couple for driving the head slider for rotation around the rotational axis only in a predetermined direction from the standard attitude. The moment of inertia can be reduced in the head slider during rotation as compared with the case where the head slider is moved based on a swinging movement. The natural frequency can be raised in the vibration system comprising the head slider and the piezoelectric actuator set. The frequency of the electric signal or servo signal can be set over a wider frequency range.

Abstract: There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of silicon oxide, and heating the structure in an atmosphere containing He and/or Ne.