Abstract: A method of producing an ink-jet recording head using ion milling is provided. The method includes the steps of forming a piezoelectric layer subsequent to an electrode layer on a substrate by using a thin-film deposition technology, forming an energy-generating element for generating energy for ink ejection by etching the electrode layer and the piezoelectric layer simultaneously by ion milling, and removing a fence formed by deposits of mixed fine powders including those etched off the electrode layer and the piezoelectric layer.

Abstract: An ink-jet recording head having no piezoelectric element in a part where no piezoelectric element is required and including an individual electrode lead-out part having such a cross section that allows smooth power supply is provided.

Abstract: A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

Abstract: The semiconductor device comprises: a memory cell transistor formed on a semiconductor substrate 10; insulation films 22, 30 covering the memory cell transistor; a buffer structure 40 formed on the insulation film; and a capacitor including a lower electrode 42 formed on the buffer structure 40 and electrically connected to the source/drain diffused layer 20; a capacitor dielectric film 44 formed on the lower electrode 42, and formed of a perovskite ferroelectric material having a smaller thermal expansion coefficient than that of the buffer structure 40 and having a crystal oriented substantially perpendicular to a surface of the lower electrode 42. The buffer structure for mitigating the influence of the stress from the substrate is formed below the lower electrode, whereby a polarization direction of the capacitor dielectric film can be made parallel with a direction of an electric field applied between the upper electrode and the lower electrode.

Abstract: A semiconductor device comprises a first electrode 32, a ferroelectric film 36 formed above the first electrode, and a second electrode 40 formed above the ferroelectric film, which further comprises intermediate layers 34, 38 formed at least one of boundary between the first electrode and the ferroelectric film, and boundary between the ferroelectric film and the second electrode and having perovskite crystal structure. The intermediate layers having perovskite crystal structure are formed between the first electrode and the ferroelectric film and between the ferroelectric film and the second electrode, whereby even in a case that base metal is used as a material of the bottom electrode and the top electrode of a ferroelectric capacitor, the ferroelectric film can have crystal structure exhibiting ferroelectricity. Base metal can be used as a material of the bottom electrode and the top electrode of the ferroelectric capacitor, which decreases costs of semiconductor devices.

Abstract: The ink jet printer head comprises: a piezoelectric device 10 including a stress removing electrode 14, a stress removing piezoelectric layer 16 formed on the stress removing electrode 14, and a drive layers formed of drive electrodes 18 and a piezoelectric layer 20 formed on the stress removing piezoelectric layer 16, the drive layer being divided in a plurality of drive portions 222 and a plurality of non-drive portions 26 by grooves 24 which arrive at the stress removing piezoelectric layer 16; and a channel plate 40 jointed to the piezoelectric device 10 and having discrete ink channels 42 formed in parts thereof opposed to the drive portions 22, corresponding to nozzles for jetting ink.

Abstract: There are disclosed a piezoelectric actuator which can obtain large displacement at low voltage, which is small-sized and lightweight, and whose manufacture cost is low, and a small-sized lightweight information storage apparatus in which the piezoelectric actuator is incorporated, and which is provided with a small inertia moment during head driving and a high recording density. A piezoelectric actuator 200 includes a center body 200a and two spiral arms 200b, and two arms 200b are entirely in rotation symmetry and nonlinear symmetry.

Abstract: A DC plasma jet CVD process having a high film deposition rate is employed. A material having low adhesion with diamond is used for a substrate. A diamond film automatically peels from the substrate at the time of cooling. Gas is recycled because gas utilization efficiency is low. In this case, deposition of carbon can be prevented by setting a gas flow velocity to at least 5 m/s in the proximity of an anodic point.

Abstract: A piezoelectric device including an insulating substrate and a displacement layer formed on the insulating substrate including a first electrode, a piezoelectric layer and a second electrode laid on the insulating substrate in the stated order, a part of a surface of the piezoelectric device in a region where the first and the second electrodes overlap each other is projected out of the rest part of the surface. The multi-layer body has a pair of high rigidity plates each provided on a side-wall for securing the multi-layer body.

Abstract: A piezoelectric device including an insulating substrate and a displacement layer formed on the insulating substrate including a first common electrode, a piezoelectric layer and a plurality of second electrodes laid on the insulating substrate in the stated order, where a part of a surface of the piezoelectric device in a region where the first and the second electrodes overlap each other is projected out of the rest part of the surface. The thus-formed piezoelectric device can increase the amount of displacement of the displacement layer.

Abstract: A piezoelectric fluid pump includes a stationary pump base and a plurality of piezoelectric elements arranged in parallel on the stationary pump base, each of the piezoelectric elements having, in a polarizing direction thereof or in a direction perpendicular to the polarizing direction, a first end fixed to the stationary pump base and a free, second end. The free, second ends of respective pairs of adjacent the piezoelectric elements are connected to each other, for respective units of the fluid pump. Between the pair of piezoelectric elements and between the stationary pump base and the connecting means, pressure chambers are defined. There are gaps are between walls of the piezoelectric elements and walls of piezoelectric elements of adjacent units.

Abstract: A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.

Abstract: A process for producing diamond includes a step of bringing a columnar cathode and a tubular pilot anode provided concentrically around the cathode, into proximity to a plasma jetting port of a front end portion of a tubular main anode provided concentrically around the pilot anode. According to the process, a voltage is applied across the cathode and the pilot anode to convert a pilot gas to the form of a plasma. Then, the cathode is moved away from the pilot anode along a common axis. The process also includes the step of holding the discharge voltage between the cathode and the pilot anode at a first preselected voltage, and then applying voltage across the cathode and the main anode to convert a main gas to the form of a plasma. Subsequently, at least the pilot anode is moved away from the main anode along the common axis while maintaining the discharge voltage between the cathode and the pilot anode at the first preselected voltage.

Abstract: A diamond film is formed on a surface of a substrate. The diamond film is attached securely to the substrate by forming a first layer on the surface comprising a mixture of a main component of the substrate and a sintering reinforcement agent for diamond, then forming a second layer comprising a mixture of said agent and diamond on said first layer, and finally forming the diamond film on the second layer.

Abstract: An apparatus for a vapor deposition of diamond by:effecting an arc discharge while feeding a discharge gas between an anode and a cathode of a thermal plasma chemical vapor deposition device;radicalizing a gaseous carbon compound by feeding the gaseous carbon compound to a generated plasma jet; andpermitting said radicalized plasma jet to impinge on a substrate to be treated, whereby a film of diamond is formed on said substrate.

Abstract: An apparatus for depositing a diamond film on a substrate includes a first electrode formed as an enclosed body having a nozzle for jetting thermal plasma opening therefrom and a second electrode of opposite polarity positioned in the nozzle. The apparatus additionally includes a power source for applying a direct current voltage between the electrodes. A gas is fed between the electrodes as a direct current voltage is applied thereto, whereby the gas is formed into a thermal plasma which is jetted through the nozzle. A starting gas feed system is included for feeding gaseous starting compounds for vapor phase deposition to the plasma jet and a powder supplying pipe is provided for feeding a metal powder between the electrodes.

Abstract: A method for vapor deposition of diamond by effecting an arc discharge while feeding a discharge gas between an anode and a cathode of a thermal plasma chemical vapor deposition device, radicalizing a gaseous carbon compound by feeding the gaseous carbon compound into a generated plasma jet, and permitting the radicalized plasma jet to impinge on a substrate to be treated, whereby a film of diamond is formed on the substrate.

Abstract: A process and apparatus for producing a diamond film from a gas phase, in which a fuel gas is burnt by oxygen gas in a torch, to thereby provide a gas flame jet having a high temperature and high speed sufficient to form a high quality diamond film on a substrate, by an unlimited use of various kinds of combustible carbon compound gases as the fuel gas. A process and apparatus for producing a diamond film from a gas phase, in which a thermal spray material is fed to a combustion flame to thereby form an intermediate layer of a mixture of the thermal spray material and diamond between a substrate and a diamond film, to thereby provide a high purity diamond film having an improved adhesion to the substrate.

Abstract: A process for forming a diamond gas phase synthesized coating film which is easily controlled and affords a high quality, good adhesion strength diamond film includes a step of forming a mixed layer of a plasma spraying material and diamond by simultaneously conducting plasma injection by a plasma spraying, a first torch and plasma CVD by a CVD plasma, second torch to thereby form a mixed layer on the substrate. The first and second torches are structurally distinct and have respective, separately and selectively controlled plasma generation operating conditions.

Abstract: A diamond film is deposited on a surface of a substrate. The diamond film is attached securely to the substrate by forming a first layer on the surface comprising a mixture of a main component of the substrate and a sintering reinforcement agent for diamond, then forming a second layer comprising a mixture of said agent and diamond on said first layer, and finally forming the diamond film on the second layer.