Patents by Inventor Kazufumi Watanabe
Kazufumi Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210193703Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.Type: ApplicationFiled: December 19, 2019Publication date: June 24, 2021Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Young Woo Jung, Geunsook Park, Lindsay Alexander Grant
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Publication number: 20210075942Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.Type: ApplicationFiled: November 3, 2020Publication date: March 11, 2021Applicant: SONY CORPORATIONInventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
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Patent number: 10855893Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.Type: GrantFiled: January 10, 2020Date of Patent: December 1, 2020Assignee: Sony CorporationInventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
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Patent number: 10848697Abstract: An image sensor pixel array comprises a center region and two parallel edge regions, wherein the center region is between the two parallel edge regions. The center region comprises a plurality of image pixels disposed along first sub-array of rows and columns, wherein each of the plurality of image pixels comprises a first micro-lens (ML) formed at an offset position above a first light receiving element as a countermeasure for shortening of exit pupil distance of the image pixel in the center region, and each of the two parallel edge regions comprises a plurality of phase detection auto-focus (PDAF) pixels disposed along second sub-array of rows and columns, wherein each of the plurality of PDAF pixels comprises a second micro-lens (ML) formed at an alignment position above a second light receiving element; and at least one of the PDAF pixels is located at a distance away from center of the edge region to receive incident light along an injection tilt angle.Type: GrantFiled: August 14, 2018Date of Patent: November 24, 2020Assignee: OmniVision Technologies, Inc.Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Dyson Tai, Lindsay Grant
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Patent number: 10812746Abstract: Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.Type: GrantFiled: February 6, 2018Date of Patent: October 20, 2020Assignee: Sony CorporationInventors: Yoshiaki Masuda, Kazufumi Watanabe, Kyohei Mizuta, Keishi Inoue, Hirohisa Uchida
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Publication number: 20200296263Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.Type: ApplicationFiled: May 28, 2020Publication date: September 17, 2020Applicant: SONY CORPORATIONInventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
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Patent number: 10771664Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.Type: GrantFiled: January 18, 2019Date of Patent: September 8, 2020Assignee: Sony CorporationInventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
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Patent number: 10738166Abstract: A polyoxymethylene resin composition from which formaldehyde is generated in a reduced amount upon molding, without carrying out a stabilization treatment for stabilizing an unstable terminal group in a crude oxymethylene copolymer. A hindered phenol-type antioxidant agent and an ethylene-(methacrylic acid) copolymer resin or an ethylene-(acrylic acid) copolymer resin or a salt thereof are melted and kneaded together to produce a polyoxymethylene resin composition without carrying out a stabilization treatment for stabilizing an unstable terminal group in a crude oxymethylene copolymer for which a polymerization catalyst is deactivated after the completion of copolymerization, and in which the unstable terminal group is not yet stabilized. When the polyoxymethylene resin composition is extrusion-molded, the discoloration of a molded product or the deterioration in properties of the molded product can be prevented for a long period of time.Type: GrantFiled: September 9, 2014Date of Patent: August 11, 2020Assignee: POLYPLASTICS CO., LTD.Inventors: Tomohiro Monma, Kazufumi Watanabe, Akihide Shimoda
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Publication number: 20200154011Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.Type: ApplicationFiled: January 10, 2020Publication date: May 14, 2020Applicant: SONY CORPORATIONInventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
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Publication number: 20200091206Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.Type: ApplicationFiled: November 19, 2019Publication date: March 19, 2020Applicant: Sony CorporationInventors: Susumu Hiyama, Kazufumi Watanabe
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Publication number: 20200059618Abstract: An image sensor pixel array comprises a center region and two parallel edge regions, wherein the center region is between the two parallel edge regions. The center region comprises a plurality of image pixels disposed along first sub-array of rows and columns, wherein each of the plurality of image pixels comprises a first micro-lens (ML) formed at an offset position above a first light receiving element as a countermeasure for shortening of exit pupil distance of the image pixel in the center region, and each of the two parallel edge regions comprises a plurality of phase detection auto-focus (PDAF) pixels disposed along second sub-array of rows and columns, wherein each of the plurality of PDAF pixels comprises a second micro-lens (ML) formed at an alignment position above a second light receiving element; and at least one of the PDAF pixels is located at a distance away from center of the edge region to receive incident light along an injection tilt angle.Type: ApplicationFiled: August 14, 2018Publication date: February 20, 2020Applicant: OmniVision Technologies, Inc.Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Dyson Tai, Lindsay Grant
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Patent number: 10529760Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.Type: GrantFiled: September 28, 2017Date of Patent: January 7, 2020Assignee: Sony CororationInventors: Susumu Hiyama, Kazufumi Watanabe
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Patent number: 10412287Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.Type: GrantFiled: January 18, 2019Date of Patent: September 10, 2019Assignee: Sony CorporationInventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
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Patent number: 10326920Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.Type: GrantFiled: July 19, 2018Date of Patent: June 18, 2019Assignee: Sony CorporationInventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
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Publication number: 20190174034Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.Type: ApplicationFiled: January 18, 2019Publication date: June 6, 2019Applicant: SONY CORPORATIONInventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
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Publication number: 20190174033Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.Type: ApplicationFiled: January 18, 2019Publication date: June 6, 2019Applicant: SONY CORPORATIONInventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
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Publication number: 20190165016Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.Type: ApplicationFiled: November 30, 2017Publication date: May 30, 2019Inventors: Kazufumi Watanabe, Young Woo Jung, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant
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Patent number: 10304882Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.Type: GrantFiled: November 30, 2017Date of Patent: May 28, 2019Assignee: OmniVision Technologies, Inc.Inventors: Kazufumi Watanabe, Young Woo Jung, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant
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Publication number: 20190074318Abstract: A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.Type: ApplicationFiled: November 1, 2018Publication date: March 7, 2019Applicant: Sony CorporationInventors: Kazufumi Watanabe, Yasushi Maruyama
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Patent number: 10218924Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.Type: GrantFiled: April 12, 2017Date of Patent: February 26, 2019Assignee: OmniVision Technologies, Inc.Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Duli Mao, Hiroaki Ebihara, Kazufumi Watanabe