Abstract: An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step.

Abstract: A method for manufacturing a semiconductor device includes: a first step of forming a base layer, which includes an element portion having a gate electrode and a flat interlayer insulating film formed so as to cover the gate electrode; a second step of ion implanting a delamination material into the base layer to form a delamination layer; a third step of bonding the base layer to a substrate; and a fourth step of separating and removing a part of the base layer along the delamination layer. An implantation depth of the delamination material in the gate electrode is substantially the same as that of the delamination material in the interlayer insulating film.

Abstract: The present invention provides a production method of a semiconductor device, capable of improving surface flatness of a semiconductor chip formed on a semiconductor substrate and thereby suppressing a variation in electrical characteristics of the semiconductor chip transferred onto a substrate with an insulating surface, and further capable of improving production yield.

Abstract: A method is disclosed for producing a semiconductor device produced by (i) doping hydrogen ions or rare gas ions into a device substrate in which a transfer layer (16) is formed, (ii) then bonding the device substrate to a carrier target substrate, and (iii) transferring the transfer layer (16) onto the carrier substrate (30) by cleaving the device substrate along a portion in which the hydrogen ions or the rare gas ions are doped, the method including providing a blocking layer (11) for blocking diffusion of a bubble-causing substance between (i) a bonding surface (13), which serves as a bonding interface between the device substrate and the carrier substrate, and (ii) the transfer layer (16). This prevents bubbles from forming at the bonding interface between the semiconductor substrate and the target substrate due to the diffusion of the bubble-causing substance.

Abstract: A method for manufacturing a semiconductor device including a thin film device unit including a TFT, and a peripheral device unit provided around the thin film device unit and including a semiconductor element, includes a first step of preparing a substrate, a second step of bonding the peripheral device unit directly to the substrate, and a third step of forming the thin film device unit on the substrate to which the peripheral device unit is bonded.

Abstract: The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics. The present invention is a production method of a semiconductor device including single-crystal semiconductor thin film-including single-crystal semiconductor elements on an insulating substrate, the production method including the successive steps of a first heat treatment step and a second heat treatment step, wherein in the first heat treatment step, a single-crystal semiconductor thin film undergoes a heat treatment at lower than 650° C.

Abstract: The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics and a reduced wiring resistance. The present invention is a production method of a semiconductor device including single-crystal semiconductor thin film-including single-crystal semiconductor elements on an insulating substrate, the production method including a heat treatment step of subjecting a single-crystal semiconductor thin film to a heat treatment at 650° C. or higher, the single-crystal semiconductor thin film including at least part of each one of single-crystal semiconductor elements and boded to an intermediate substrate with a heat-resistant temperature higher than that of the insulating substrate.

Abstract: A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming step, the planarization assisting layer is formed so that a height of the planarization assisting layer from a surface of the first planarizing layer located on a side opposite to the substrate layer becomes equal between at least a part of a region where the conductive films are formed, and at least a part of a region where no conductive film is formed.

Abstract: A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer.

Abstract: The present invention provides a production method of a semiconductor device, a production method of a display device, a semiconductor device, a production method of a semiconductor element, and a semiconductor element, each capable of providing a lower-resistance semiconductor element which is more finely prepared through more simple steps. The production method of the semiconductor device of the present invention is a production method of a semiconductor device including a semiconductor element on a substrate, wherein the production method includes a metal silicide-forming step of: transferring the semiconductor element onto the substrate, the semiconductor element having a multilayer structure of a silicon layer and a metal layer, and by heating, forming metal silicide from silicon for a metal layer-side part of the silicon layer and metal for a silicon layer-side part of the metal layer.

Abstract: The present invention provides a semiconductor device which can be produced by simple and cheap processes and effectively achieve improved performances and a reduced electric power consumption. Further, the present invention provides a production method thereof and a display device including the semiconductor device or a semiconductor device produced by the production method. The present invention is a semiconductor device including a pixel part and an integrated circuit part on a substrate, the pixel part including a switching element having a gate electrode formed on a semiconductor thin film, the integrated circuit part including a semiconductor layer on a gate electrode, wherein a passivation film is formed on the gate electrode in the pixel part.

Abstract: A method for manufacturing a semiconductor device includes: a first etching step of etching a TEOS layer from a glass substrate to partially expose a SiN layer; a second etching step, conducted separately and independently from the first etching step, of wet-etching the exposed SiN layer to partially expose the glass substrate; and a bonding step of bonding a driver portion to the exposed glass substrate.

Abstract: A transistor formed on a monocrystalline Si wafer is temporarily transferred onto a first temporary supporting substrate. The first temporarily supporting substrate is heat-treated at high heat so as to repair crystal defects generated in a transistor channel of the monocrystalline Si wafer when transferring the transistor. The transistor is then made into a chip and transferred onto a TFT substrate. In order to transfer the transistor which has been once separated from the monocrystalline Si wafer, a different method from a stripping method utilizing ion doping is employed.

Abstract: An active matrix substrate includes a glass substrate, a driver portion formed on the glass substrate in a protruding state, a stepped portion formed along a surface of the driver portion and a surface of the glass substrate, an insulating reentrant-angle compensating film formed on a surface of the stepped portion, for compensating for at least a part of a reentrant-angle shape of the stepped portion, and a wiring layer formed along a surface of the reentrant-angle compensating film and connected to the driver portion.

Abstract: In a semiconductor device employing a glass substrate, the object of the present invention is to provide a high performance semiconductor device with a large screen at low cost, which prevents the semiconductor device from being contaminated by impurities from the glass substrate. In a semiconductor device comprising a blocking film provided in contact with a glass substrate and TFTs provided on the blocking film, the blocking film is characterized by being made of a tantalum oxide film.

Abstract: In a semiconductor device employing a glass substrate, the object of the present invention is to provide a high performance semiconductor device with a large screen at low cost, which prevents the semiconductor device from being contaminated by impurities from the glass substrate. In a semiconductor device comprising a blocking film provided in contact with a glass substrate and TFTs provided on the blocking film, the blocking film is characterized by being made of a tantalum oxide film.

Abstract: In a semiconductor device employing a glass substrate, the object of the present invention is to provide a high performance semiconductor device with a large screen at low cost, which prevents the semiconductor device from being contaminated by impurities from the glass substrate. In a semiconductor device comprising a blocking film provided in contact with a glass substrate and TFTs provided on the blocking film, the blocking film is characterized by being made of a tantalum oxide film.

Abstract: An object of the present invention is to improve the reliability and the operation performance of a semiconductor device comprising a driver circuit and a pixel pixel section by optimizing the TFT structure disposed in each circuit in accordance with the function of the circuit. The optimized circuit operation can be obtained by providing a LDD region that overlaps with at least the gate electrode in the driver circuit n-channel TFT, and a LDD region in the pixel section n-channel TFT in which the impurity concentration of the both LDD regions are differed.