Abstract: A fixing unit or device that can be used in an image forming apparatus includes a first heater element that is formed of a material that increases in electrical resistance with increases in temperature. A controller of the fixing unit is configured to vary a duty ratio of electric power applied to the first heater element during a start-up operation in which the temperature of the first heater element is raised to a target operating temperature. By varying the duty ratio during the start-up operation, changes in the resistance of the first heater element with the heating can be compensated. For example, the duty ratio can be increased during the course of the start-up to achieve the target operating temperature faster.

Abstract: A video transmission apparatus, including: a video data obtaining unit which obtains video data; a video data storing unit which stores the video data obtained by the video data obtaining unit; a reduced video generating unit which generates reduced video of which a data volume is reduced by performing image processing on the video data obtained by the video data obtaining unit; a streaming transmitting unit which transmits the reduced video to a transmission destination by streaming; and a video data transmitting unit which transmits the video data stored in the video data storing unit to a preservation destination of the video data in response to a predetermined condition being satisfied, is provided.

Abstract: A digital mixer is disclosed having a plurality of displays and which applies a mixing process on an audio signal. The digital mixer includes an input interface, one or more processors, an output interface, at least a first display and a second display, and an operator. The operator includes a mode switching button for switching between a first mode and a second mode. The one or more processors are configured to cause parameter setting screens of audio signals of different channels to be displayed respectively on the first display and the second display when the mode switching button is set to the first mode, and cause different parameter setting screens of an audio signal of a single channel to be displayed respectively on the first display and the second display when the mode switching button is set to the second mode.

Abstract: A digital mixer is disclosed having a plurality of displays and which applies a mixing process on an audio signal. The digital mixer includes an input interface, one or more processors, an output interface, at least a first display and a second display, and an operator. The operator includes a mode switching button for switching between a first mode and a second mode. The one or more processors are configured to cause parameter setting screens of audio signals of different channels to be displayed respectively on the first display and the second display when the mode switching button is set to the first mode, and cause different parameter setting screens of an audio signal of a single channel to be displayed respectively on the first display and the second display when the mode switching button is set to the second mode.

Abstract: A mixing console is disclosed which enables temporary operation and display of channels of different layers with a simple operation. A digital mixing console includes a channel strip portion that has a plurality of channel strips having an operator which adjusts a parameter value for controlling an audio signal, and a layer setter that divides the channel strip portion into a plurality of blocks and sets layer data which define a channel to be operated and to be displayed for each of the blocks. When one or more processors detect an operation of FIX LAYER button which prohibits switching of the layer data to fix the layer data for each of the blocks, the one or more processors fix the layer data of the corresponding block.

Abstract: A mixing console is disclosed which enables temporary operation and display of channels of different layers with a simple operation. A digital mixing console includes a channel strip portion that has a plurality of channel strips having an operator which adjusts a parameter value for controlling an audio signal, and a layer setter that divides the channel strip portion into a plurality of blocks and sets layer data which define a channel to be operated and to be displayed for each of the blocks. When one or more processors detect an operation of FIX LAYER button which prohibits switching of the layer data to fix the layer data for each of the blocks, the one or more processors fix the layer data of the corresponding block.

Abstract: A semiconductor device 100 of the present invention includes a front end and back ends A and B, each including a plurality of layers. Further, in the plurality of layers of the back end B, (i) circuits 22, 23, and 24 having a security function are provided in at least one layer having a wiring pitch of 100 nm or more, (ii) a circuit having a security function is provided in at least one wiring layer in M5 or higher level (M5, M6, M7, . . . ), (iii) a circuit having a security function is provided in at least one layer, for which immersion ArF exposure does not need to be used, or (iv) a circuit having a security function is provided in at least one layer that is exposed by using an exposure wavelength of 200 nm or more.

Abstract: A semiconductor device 100 of the present invention includes a front end and back ends A and B, each including a plurality of layers. Further, in the plurality of layers of the back end B, (i) circuits 22, 23, and 24 having a security function are provided in at least one layer having a wiring pitch of 100 nm or more, (ii) a circuit having a security function is provided in at least one wiring layer in M5 or higher level (M5, M6, M7, . . . ), (iii) a circuit having a security function is provided in at least one layer, for which immersion ArF exposure does not need to be used, or (iv) a circuit having a security function is provided in at least one layer that is exposed by using an exposure wavelength of 200 nm or more.

Abstract: A turbine rotor includes a high- and low-temperature side rotor base materials. The high- and low-temperature materials include concavities and grooves. The turbine rotor has an enclosed space formed by the concavity of the high- and low-temperature materials being disposed opposingly, and a gap formed by the grooves of the high- and low-temperature materials being disposed opposingly. The turbine rotor contains a buildup welding section formed between the high- and low-temperature materials, which has the same composition as that of the high- or low-temperature material, and has a penetration bead on the enclosed space side, and the gap contains a weld metal filled therein. Thus, a stable penetration bead can be formed in a dissimilar material welded rotor combining two kinds of alloy materials with different thermal properties, and then generation of a non-welded portion of a butting section that becomes a start point of fracture can be suppressed.

Abstract: When detecting an abnormality, an in-vehicle wireless instrument in a plug-in vehicle sends an abnormality occurrence notification to a mobile terminal via an information center. The mobile terminal performs a notification to notify a user of the abnormality having occurred in the plug-in vehicle. When the user performs a charging forbiddance manipulation based on the notification, the mobile terminal sends a charging forbidding command to a power management ECU in the vehicle via the information center and the in-vehicle wireless instrument. When receiving the charging forbidding command, the power management ECU stops charging a battery using an external power source, and sends a setting completion notification to the mobile terminal via the in-vehicle wireless instrument and the information center. When receiving the setting completion notification, the mobile terminal notifies the user that the charging is stopped.

Abstract: A turbine rotor includes a high- and low-temperature side rotor base materials. The high- and low-temperature materials include concavities and grooves. The turbine rotor has an enclosed space formed by the concavity of the high- and low-temperature materials being disposed opposingly, and a gap formed by the grooves of the high- and low-temperature materials being disposed opposingly. The turbine rotor contains a buildup welding section formed between the high- and low-temperature materials, which has the same composition as that of the high- or low-temperature material, and has a penetration bead on the enclosed space side, and the gap contains a weld metal filled therein. Thus, a stable penetration bead can be formed in a dissimilar material welded rotor combining two kinds of alloy materials with different thermal properties, and then generation of a non-welded portion of a butting section that becomes a start point of fracture can be suppressed.

Abstract: A method comprising: supplying a gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10?21 atm by a water/oxygen molecule discharging apparatus into the interior of a reaction chamber and carrying out a dehydration/deoxidation process in the interior of said reaction chamber so as to control water vapor partial pressure to become lower than 10?10 atm; depositing a metal film on a substrate by supplying a carrier gas or a plasma excitation gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10?21 atm into the interior of said reaction chamber; forming an insulating film on the wafer by oxidizing the metal film in a low-oxygen atmosphere whose oxygen partial pressure has been controlled to become lower than 10?20 atm.

Abstract: A semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A method of manufacturing a semiconductor device including introducing nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided.

Abstract: A terminal is enabled to receive an input manipulation of an engine start request by a user, and communicates with an in-vehicle apparatus mounted in a host vehicle via a wireless communication network. When the input manipulation of the engine start request is made in the terminal, a server functioning as a determination section determines whether the host vehicle exists in an idling prohibition region. The server also functions as a start permission output section. When the host vehicle does not exist in the idling prohibition region, the server outputs a start permission instruction for an engine start apparatus. When the host vehicle exists in the idling prohibition region, any start permission instruction is not outputted.

Abstract: Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing an SOI substrate having a (100) surface orientation, and nano-wire field effect transistor where two triangular columnar members configuring the nano-wires and being made of a silicon crystal layer are arranged one above the other on an SOI substrate having a (100) surface such a way that the ridge lines of the triangular columnar members face via an insulator; processing the silicon crystal configuring the SOI substrate into a standing plate-shaped member having a rectangular cross-section; and as a nanowire, processing the silicon crystal by orientation dependent wet etching into a shape where two triangular columnar members are arranged one above the other in such a way that the ridge lines of the triangular columnar members configuring the nano-wires face through the ridge lines thereof, and an integrated circuit including the nano-wire field effect transistor.

Abstract: A manufacturing method of the nano-wire field effect transistor, comprising steps of preparing an SOI substrate having a (100) surface orientation; processing a silicon crystal layer comprising the SOI substrate into a standing plate-shaped member having a rectangular cross-section; processing the silicon crystal layer by orientation dependent wet etching and thermal oxidation into a shape where two triangular columnar members are arranged one above the other with a spacing from each other so as to face along the ridge lines of the triangular columnar members; and processing the two triangular columnar members into a circular columnar member configuring a nano-wire by hydrogen annealing or thermal oxidation.

Abstract: Dissimilar metal welds including a buttering portion with a small variation in strength distribution in a plate thickness direction are formed by welding two parent materials having at least one of different compositions and different refining conditions through a buttering for alleviating mismatch between one of the different compositions and the different refining conditions of the two members and through a welded metal for joining one of the parent materials and the buttering. The buttering is formed of welding metals laminated in a plate thickness direction, and a dilution ratio of the buttering with the parent materials is 50% or less. The manufacturing method includes performing butt welding on a dummy material formed by increasing a groove depth by providing a member on a bottom side of a welding groove and on parent materials by using the buttering; and processing a groove within a welding metal formed of the buttering.

Abstract: When detecting an abnormality, an in-vehicle wireless instrument in a plug-in vehicle sends an abnormality occurrence notification to a mobile terminal via an information center. The mobile terminal performs a notification to notify a user of the abnormality having occurred in the plug-in vehicle. When the user performs a charging forbiddance manipulation based on the notification, the mobile terminal sends a charging forbidding command to a power management ECU in the vehicle via the information center and the in-vehicle wireless instrument. When receiving the charging forbidding command, the power management ECU stops charging a battery using an external power source, and sends a setting completion notification to the mobile terminal via the in-vehicle wireless instrument and the information center. When receiving the setting completion notification, the mobile terminal notifies the user that the charging is stopped.

Abstract: A manufacturing method of the nano-wire field effect transistor, comprising steps of preparing an SOI substrate having a (100) surface orientation; processing a silicon crystal layer comprising the SOI substrate into a standing plate-shaped member having a rectangular cross-section; processing the silicon crystal layer by orientation dependent wet etching and thermal oxidation into a shape where two triangular columnar members are arranged one above the other with a spacing from each other so as to face along the ridge lines of the triangular columnar members; and processing the two triangular columnar members into a circular columnar member configuring a nano-wire by hydrogen annealing or thermal oxidation.

Abstract: A semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A method of manufacturing a semiconductor device including introducing nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided.