Abstract: A start signal output circuit having an RF/DC conversion circuit to which radio frequency power (RF) of specified frequency is inputted and from which a direct current potential (DC) is outputted, comprises a detection/amplification circuit 210 which includes a voltage doubler wave-detector circuit 10 configured including a sensing diode Q1 (Tr34) for sensing the RF power, a differential amplifier including differential pair transistors Tr31 and Tr32, and a current mirror circuit. A base current of one Tr31 of the differential pair transistors is brought into substantial agreement with a DC component of a current flowing through the sensing diode Q1 (Tr34). A total of currents flowing through the differential pair transistors Tr31 and Tr32 is regulated to a substantially constant value by the current mirror circuit. Thus, the start signal output circuit which is small in size, high in sensitivity and low in power consumption can be realized.

Abstract: There is provided a semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A manufacturing method of a semiconductor device comprising the step of making the introduction of nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided.

Abstract: A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 ?m-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.

Abstract: A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

Abstract: An object of the present invention is to provide a semiconductor device which comprises a barrier film having a high etching selection ratio of the interlayer insulating film thereto, a good preventive function against the Cu diffusion, a low dielectric constant and excellent adhesiveness to the Cu interconnection and a manufacturing method thereof.

Abstract: The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced.

Abstract: A thin film forming method characterized by at least a first step and a second step which steps may be repeated. The first step is the step of supplying a compound containing at least one kind of metal element onto a substrate, and the second step is the step of irradiating the substrate with energy particles in order to introduce the metal element into the substrate. A semiconductor device manufacturing method of the present invention uses the thin film forming method described above in the manufacturing of a semiconductor device.

Abstract: A switch device is provided which allows easy recognition of the operation amount of the switch device with an inexpensive structure and without the need for an operator to change the posture or the like, even when a blind spot region is generated in an indicator as a special indication region at the time of indicating the operation amount of the switch. When the special indication region on the indicator cannot be seen directly because it is blocked by a knob, the state of the indicator in the special indication region is expressed using a visible region on the indicator which is always visible. Thus, the operator can recognize the operation amount of the switch device in the blind spot region without changing the posture or the like and using a simple structure of the switch device.

Abstract: A switch device is provided which allows easy recognition of the operation amount of the switch device with an inexpensive structure and without the need for an operator to change the posture or the like, even when a blind spot region is generated in an indicator as a special indication region at the time of indicating the operation amount of the switch. When the special indication region on the indicator cannot be seen directly because it is blocked by a knob, the state of the indicator in the special indication region is expressed using a visible region on the indicator which is always visible. Thus, the operator can recognize the operation amount of the switch device in the blind spot region without changing the posture or the like and using a simple structure of the switch device.

Abstract: A deflection yoke capable of easily adjusting a member having a pair of magnetic pieces by moving the member to a standard state in the case of correcting misconvergence. According to the deflection yoke of the invention, a member having a pair of magnetic pieces disposed in the horizontal deflection direction is attached to an electron gun side of the deflection yoke. The shape of a part of each of ends of the member coincides with a part of the outer shape of the electron gun side of the deflection yoke. The adjusting person can easily set the member into the standard state by adjusting the parts with his/her fingers. By moving the member in the horizontal direction from such a state, misconvergence can be corrected.

Abstract: A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

Abstract: The invention provides an insulator having a main component of silicon dioxide, wherein the insulator includes at least one kind of organic polymer such as benzene nucleuses distributed therein in order to reduce a dielectric constant thereof as well as a method of forming the same.

Abstract: A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.

Abstract: A metal film with high melting point containing such nitrogen as titanium nitride is disposed on the interface between an amorphous carbon fluoride film and a metal. A structure is obtained from the function of a nitrogen-containing metal film with high melting point which prevents fluorine dispersion, to prevent such problems as the reaction of a metal and fluorine at heating process and the following falling or swelling of the metal film can be solved. In addition, the heating process possible to introduce in the manufacturing steps allow to complete the LSI making process of a practical multilayer wiring structure on the basis of a low dielectric constant of amorphous carbon.

Abstract: There is provided a method of fabricating a semiconductor device having a multi-layered structure and including an interlayer insulating film composed of carbon family material, the method including the steps of (a) depositing an insulating film on a lower wiring layer, the insulating film being composed of carbon family material, (b) annealing the insulating film in hydrogen atmosphere at a first temperature equal to or greater than a temperature at which the insulating film has been deposited, and (c) forming an upper wiring layer on the insulating film. The method suppresses gas from being discharged out of an insulating film without an increase in dielectric constant, and prevents deposited films on the insulating film from being peeled off.

Abstract: A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.

Abstract: In an apparatus for forming a film of a semiconductor device in which chemical vapor deposition is used to accumulate insulation films such as a carbon-compound film and a silicon-oxide or silicon-nitride film on a silicon substrate, it is possible to prevent the peel-off of the silicon-oxide film in the circumferential area of the silicon substrate.The apparatus includes a chamber including a holder to hold the substrate, a ring-shaped member to grasp the substrate in cooperation with the holder, and a reactive gas supplier to supply a predetermined type of reactive gas to the chamber. The member dimensionally has an inside diameter smaller than an outside diameter of the holder and an outside diameter larger than that of the holder. During the film forming process with the reactive gas, the member concentrically covers a circumferential region of a surface of the substrate.

Abstract: There is provided a method of forming an insulating film containing fluorine therein, including the steps of dissociating a process gas containing no hydrogen molecules and atoms with plasma in a reduced pressure, and varying said pressure while said insulating film is being formed, for controlling a content of fluorine in said insulating film. For instance, the pressure is first set low, then raised, and then lowered in the second step. The insulating film containing fluorine therein may be an amorphous carbon fluoride film or a silicon dioxide film containing fluorine therein. In accordance with the above-mentioned method, it is possible to form a fluorine-added insulating film in which hydrofluoric acid, a product causing many problems, is not generated, by using material containing no hydride.

Abstract: A metal film with high melting point containing such nitrogen as titanium nitride is disposed on the interface between an amorphous carbon fluoride film and a metal. A structure is obtained from the function of a nitrogen-containing metal film with high melting point which prevents fluorine dispersion, to prevent such problems as the reaction of a metal and fluorine at heating process and the following falling or swelling of the metal film can be solved. In addition, the heating process possible to introduce in the manufacturing steps allow to complete the LSI making process of a practical multilayer wiring structure on the basis of a low dielectric constant of amorphous carbon.

Abstract: A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.