Abstract: In a method of forming an amorphous carbon thin film with a plasma chemical vapor deposition method, at least one of a hydrocarbon gas and a carbon fluoride gas is supplied in a reaction chamber as a material gas. By applying a high voltage between two electrodes, a plasma is generated in the reaction chamber using the supplied material gas. As a result, an amorphous carbon thin film is deposited on a substrate while preventing deposition of an adhesion on an inner wall of the reaction chamber. In order to prevent the adhesion from depositing on the inner wall, a bias voltage such as one of DC bias, a high frequency bias and a high frequency bias imposed on a DC bias is applied to the electrically conductive reaction chamber.

Abstract: The invention provides a semiconductor device in which interlayer insulative layers are composed of amorphous carbon film. The amorphous carbon film may include fluorine (F) therein. The invention further provides a method of fabricating a semiconductor device including an interlayer insulative layer composed of amorphous carbon film including fluorine (F), the method having the step of carrying out plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF.sub.4, C.sub.2 F.sub.6, C.sub.3 F.sub.8, C.sub.4 F.sub.8 and CHF.sub.3, and (b) at least one of N.sub.2, NO, NO.sub.2, NH.sub.3 and NF.sub.3. The method provides amorphous carbon film having superior heat resistance and etching characteristics. By composing interlayer insulative layers of a semiconductor device of the amorphous carbon film, the semiconductor device can operate at higher speed.

Abstract: A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.

Abstract: A method for blending fluorine into a polyimide free of fluorine comprises the steps of generating fluorine radicals in a fluorine based gas, removal of any charge particles from the gas to leave the fluorine radicals in the gas, and exposing a polyimide free of fluorine to an irradiation of the fluorine radicals so that the irradiated fluorine radicals penetrate into and inside the polyimide without showing any reaction to the removed charge particles on a surface of the polyimide.

Abstract: A method for blending fluorine into a polyimide free of fluorine comprises the steps of generating fluorine radicals in a fluorine based gas, removing charge particles from the gas to leave the fluorine radicals in the gas, and exposing a polyimide free of fluorine to an irradiation of the fluorine radicals so that the irradiated fluorine radicals penetrate into the polyimide, thereby avoiding reaction of the charge particles with a surface of the polyimide.

Abstract: A method for blending fluorine into a polyimide free of fluorine comprises the steps of generating fluorine radicals in a fluorine based gas, removal of any charge particles from the gas to leave the fluorine radicals in the gas, and exposing a polyimide free of fluorine to an irradiation of the fluorine radicals so that the irradiated fluorine radicals penetrate into an inside of the polyimide without showing any reaction to the removed charge particles on a surface of the polyimide.

Abstract: The invention provides a semiconductor device in which interlayer insulative layers are composed of amorphous carbon film. The amorphous carbon film may include fluorine (F) therein. The invention further provides a method of fabricating a semiconductor device including an interlayer insulative layer composed of amorphous carbon film including fluorine (F), the method having the step of carrying out plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF.sub.4, C.sub.2 F.sub.6, C.sub.3 F.sub.8, C.sub.4 F.sub.8 and CHF.sub.3, and (b) at least one of N.sub.2, NO, NO.sub.2, NH.sub.3 and NF.sub.3. The method provides amorphous carbon film having superior heat resistance and etching characteristics. By composing interlayer insulative layers of a semiconductor device of the amorphous carbon film, the semiconductor device can operate at higher speed.

Abstract: A video display device has a CRT, a deflection yoke and control means for producing a compensation current. A coil cover has a coil winding element and is attached to a front part of the yoke. A conductor is wound around and supported by only one surface of the coil winding element. A control means is coupled to a first and a second ends of the conductor.

Abstract: A convergence correction apparatus comprising a core for producing a bias magnetic field. The core has first, second, third and fourth coils provided thereon. The first and second coils are wound to produce a magnetic field in a direction opposite to the direction of the bias magnetic field. The third and fourth coils are wound to produce a magnetic field in the same direction as the direction of the bias magnetic field. The first and fourth coils are connected to form a first series circuit connected in parallel with a second series circuit of the third and second coils. A first terminal is connected to a junction between the first and third coils. A second terminal is connected to a junction between the second and fourth coils. A convergence correction coil is connected at one end thereof to a junction between the first and fourth coils and at the other end thereof to a junction between the second and third coils. A horizontal deflection current is applied between the first and second terminals.

Abstract: Errors occurring in information signals (each including control signals), dummy codes and attribute flags for the information signals and the dummy codes, transferred from a transmitting circuit to a receiving circuit through an interface line, with frames arranged in a serial transfer form are detected by using a cyclic redundancy check (CRC). The dummy codes and attribute flags for the dummy codes are not used in this checking. The re-transmission of signals in the frame resulting from a CRC error generated by the attribute flag for the dummy code changing to that of a control signal in the frame is avoided by: (1) providing, at the transmitting circuit, flags for determining the existence and the number of the control signal in the frame in front of the succeeding frame, and (2) comparing signals, relating to the flags, detected in the receiving circuit with the flags.

Abstract: Metal powder having low oxygen and carbon contents and suitable for powder metallurgy may be obtained by using, as an atomizing medium, a special composition containing an alcohol having 1-4 carbon atoms and water as its essential components when impinging the atomizing medium against a molten metal in a state isolated from the ambient air to produce the metal powder.