Abstract: Disclosed is an effective method for producing an ester compound at a reaction temperature lower than that of conventional methods, and with a high yield, even when inexpensive formic acid ester is used as a starting material. A method for producing an ester compound, the method comprising the step of reacting an organic compound having at least one unsaturated carbon bond in the molecule, and a formic acid ester in the presence of a catalyst system containing: a ruthenium compound; a cobalt compound; and a halide salt.

Abstract: Provided is a maintenance device including a wiper which wipes attached material on a liquid ejecting portion, a first cleaner which cleans the wiper to which the attached material adheres during wiping, and a second cleaner which cleans the first cleaner to which the attached material adheres during cleaning.

Abstract: It is an object of the present invention to provide an electrochemical device having an electrolytic solution having high current density, as well as high safety, where dissolution and deposition of magnesium progress repeatedly and stably. Furthermore, the present invention relates to an electrolytic solution for an electrochemical device, comprising (1) a supporting electrolyte comprising a magnesium salt, and (2) at least one or more kinds of the compound represented by following general formula (I) (wherein n represents an integer of 0 to 6, and n pieces of R1 and n pieces of R2 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a halogenoalkyl group having 1 to 6 carbon atoms.

Abstract: In a manufacturing method of sequentially forming a gate electrode film of the MOSFET, forming a gate electrode film of the non-volatile memory FET, patterning the gate electrode of the non-volatile memory FET, and patterning the gate electrode of the MOSFET, in order to form the MOSFET and the non-volatile memory FET on the same semiconductor substrate. The value of the product of S/L and H/L is specified in a case that the line of the gate electrode of the non-volatile memory FET is set to L, the space thereof is set to S, and the height thereof is set to H so that the thickness of a resist film on the gate electrode of the non-volatile memory FET which is formed in advance is set to a thickness which is not lost by etching for forming the gate electrode of the MOSFET.

Abstract: In an electromagnetic fuel injection valve including a magnetic coil housing (31) having a coil assembly (28) housed therein, the coil housing (31) includes the first and second coil housing half bodies (31a, 31b) whose cross sections are each shaped like an inferior arc, and which are oppositely disposed so as to interpose the coil assembly (28) and a coupler (34), each of the coil housing half bodies (31a, 31b) includes: a barrel portion (44) for covering an outer peripheral surface of the coil assembly (28); a front-end wall portion (45) and a rear-end wall portion (46) which are in contact with front-end and rear-end surfaces of the coil assembly (28); a front connection cylindrical portion (47) welded to the outer peripheral surface of the magnetic cylindrical body (4); and a rear connection cylindrical portion (48) welded to the outer peripheral surface of the fixed core (5); both the coil housing half bodies are formed symmetrically; and one half part and the other half part of each of the coil housing

Abstract: A power supply device includes a control circuit and a first circuit. The control circuit switches between a current control mode and a voltage control mode according to an inputted dimming signal and thus dims a light-emitting element. In the current control mode the control circuit controls an output current supplied to the light-emitting element to a target current, and in the voltage control mode the control circuit controls an output voltage supplied to the light-emitting element to a target voltage. The first circuit detects the output current and the output voltage, and sets the target voltage at which switching between the current control mode and the voltage control mode is carried out as a first voltage.

Abstract: Provided is a maintenance device including a wiper which wipes attached material on a liquid ejecting portion, a first cleaner which cleans the wiper to which the attached material adheres during wiping, and a second cleaner which cleans the first cleaner to which the attached material adheres during cleaning.

Abstract: The invention prevents inconveniences from being caused by ejection failure and unintended mixing of different colors. To this end, the invention performs preliminary ejection of ink after a wiping action to sweep mist adhering to a face of a printing head, in which an ejection opening is formed. Moreover, the amount of ink to be wastefully consumed by the preliminary ejection after the wiping is reduced. To this end, the number of preliminary ejections is regulated. The degree of adherence of mist to the ejection-opening-formed face depends on the amount of printing (the number of printed sheets, the number of ink ejections for printing, or the like). So, at the time of the preliminary ejection after the wiping, the number of ink ejections in the preliminary ejection is regulated in accordance with the amount of printing that has been done since the last wiping action.

Abstract: Provided is a liquid ejecting apparatus having a wiping device which performs a first wiping operation in which the first surface wipes the nozzle forming surface while setting a contact pressure of a wiper with respect to the nozzle forming surface to a first contact pressure, in a state where the pressurizing portion is driven and the pressure of liquid in the nozzles is set to be equal to or greater than atmospheric pressure and a second wiping operation in which the second surface wipes the nozzle forming surface wiped by the first surface while setting the contact pressure of the wiper with respect to the nozzle forming surface to a second contact pressure less than the first contact pressure.

Abstract: In a manufacturing method for a semiconductor device provided with a MONOS-type FET for a non-volatile memory and high-voltage and low-voltage MOSFETs, a groove having a predetermined depth is formed in a region in which the high-voltage MOSFET on a semiconductor substrate is formed, and an oxide film serving as a gate insulating film of the high-voltage MOSFET is formed within the formed groove by thermal oxidation. Thereafter, a gate electrode film of the low-voltage MOSFET is formed on the entire surface of the semiconductor substrate. Thereafter, a region for the MONOS-type FET is opened, the semiconductor surface of the semiconductor substrate is exposed, and a first potential barrier film, a charge storage film, and a second potential barrier film are sequentially deposited, to thereby form a charge storage three-layer film. Agate electrode film of the MONOS-type FET is formed on the formed charge storage three-layer film.

Abstract: A gate oxide film is formed in a region having a MOSFET on a semiconductor substrate formed therein, and a first polysilicon film serving as a gate electrode of the MOSFET is further formed. Thereafter, a charge storage three-layer film is formed by opening a region having a MONOS type FET formed therein, exposing a semiconductor surface of the semiconductor substrate, and sequentially depositing a first potential barrier film, a charge storage film, and a second potential barrier film. In this case, before the charge storage three-layer film is formed, an anti-oxidation film is formed on the first polysilicon film.

Abstract: In a manufacturing method of sequentially forming a gate electrode film of the MOSFET, forming a gate electrode film of the non-volatile memory FET, patterning the gate electrode of the non-volatile memory FET, and patterning the gate electrode of the MOSFET, in order to form the MOSFET and the non-volatile memory FET on the same semiconductor substrate. The value of the product of S/L and H/L is specified in a case that the line of the gate electrode of the non-volatile memory FET is set to L, the space thereof is set to S, and the height thereof is set to H so that the thickness of a resist film on the gate electrode of the non-volatile memory FET which is formed in advance is set to a thickness which is not lost by etching for forming the gate electrode of the MOSFET.

Abstract: The manufacturing method for a semiconductor device includes a step of forming an STI insulator higher than a surface of a semiconductor layer of a semiconductor substrate, and a step of implanting impurity ions from both oblique directions which are substantially perpendicular to a direction of a channel length of an FET which is isolated from other FETs by the STI and are inclined to each of one side and the other side from a normal direction of the surface of the semiconductor substrate. It is possible to adjust the impurity dose implanted into an inner side of a channel which is away from a sidewall of the STI and outer sides of channel which are formed along the vicinity of the sidewall, and to suppress the occurrence of the kink characteristics of the FET.

Abstract: A sealer gun that discharges a liquid of a coating agent or filler from a nozzle on its tip is securely prevented from producing dripping that arises as a liquid drips from the nozzle tip and remains when the liquid discharge stops. A pump including a cylinder and a freely movable piston fitting therein is assembled onto a discharge cylinder of the sealer gun, an operation rod interlocked with the pump piston and a grip are interlocked via an interlock mechanism to perform pump operation of suction-discharge by movement of the piston caused by pivoting of the grip, and a suction-discharge aperture of the pump is positioned in an internal space of the nozzle, and configured so that when the liquid discharge sops by releasing the grip, a negative or positive pressure is introduced into the nozzle because of the pump operation caused by resilient pivoting of the grip.

Abstract: One of the objects of the invention is to provide a water-saving type advanced humid air gas turbine system (AHAT) that can decrease the amount of makeup water to be supplied from the outside, by reducing the amount of water consumed when the gas turbine system is starting up, shut down, or subjected to load rejection. The AHAT includes a gas turbine system; a heat recovery steam generator for generating steam by use of exhaust gas from a turbine; a water recovery system for recovering moisture contained in the exhaust gas; a first steam system for supplying steam, coming from the heat recovery steam generator, to a compressed air header; and a second steam system for supplying steam, coming from the heat recovery steam generator, to the heat recovery steam generator or the water recovery system. The gas turbine system includes a compressor, the compressed air header for generating humidified combustion air, a combustor for generating combustion gas, and the turbine.

Abstract: A metal complex exhibits blue light emission of high color purity and has a color purity of small temperature dependence, particularly in the blue region. Specifically, the metal complex is represented by Formula (1a): wherein M is a metal atom; R0 is a divalent linking group; each j independently represents 0 or 1; RP1, RP2, RP3, RP4 and RP6 each independently represents a hydrogen atom or the like; RP5 represents a halogen atom or the like; m is an integer of from 1 to 3, n is an integer of from 0 to 2, and m+n is 2 or 3; and the portion represented by Formula (2): represents a bidentate ligand; wherein Rx and Ry are an atom bonding to the metal atom M, and each independently represents a carbon atom, an oxygen atom or a nitrogen atom.

Abstract: A highly stable metal complex useful for the manufacture of a light-emitting device has an excellent lifetime property, particularly in a blue region, specifically a metal complex represented by Formula (1): wherein M is a metal atom; each R0 independently represents a divalent linking group; i and j each independently represent 0 or 1; RP1, RP2, RP3, RP4, RP5 and RP6 resent each independently rep a hydrogen atom and the like, with a proviso that at least one of RP1, RP2, RP3, RP4, RP5 and RP6 is a dendron; m is an integer of from 1 to 3, n is an integer of from 0 to 2, and m+n is 2 or 3; and the portion represented by Formula (2): represents a bidentate ligand; wherein Rx and Ry are an atom bonding to the metal atom M, and each independently represents a carbon atom and the like.

Abstract: A covering body (10) made of a synthetic resin and including a rear shoulder part (16) oriented toward a fuel inlet part (6) side is formed around an outer periphery of an intermediate portion in an axial direction of a fuel injection valve (I). The rear shoulder part (16) includes: a first semicircular shoulder part (16a) extending over a half periphery of the covering body (10); a second semicircular shoulder part (16b) shifted in the axial direction with respect to the first semicircular shoulder part (16a) and extending over the other half periphery of the covering body (10); and a standing wall (16c) standing to connect the first and second semicircular shoulder parts (16a, 16b).

Abstract: A print job management system according to an embodiment has a transmission unit, a time calculation unit, and a list display unit. The transmission unit transmits a print job. The time calculation unit acquires the print job transmitted from the transmission unit and calculates a processing completion time taken for each of a plurality of image forming apparatuses to complete a process for the print job for each of the image forming apparatuses. The list display unit acquires the process completion time for each of the image forming apparatuses calculated by the time calculation unit and displays information regarding the processing completion time for each of the image forming apparatuses as a list.

Abstract: The present invention has an object to provide an inkjet printing apparatus that can realize both high quality image formation and improvement of a device life caused by the reduction of a mist amount of a processing liquid. The present invention is provided with a control unit that can independently control an ink ejection condition in an ink ejection unit and a processing-liquid ejection condition in a processing-liquid ejection unit. The control unit controls the ejection condition in each ejection unit so that the mist amount of the processing liquid ejected from the processing-liquid eject unit is smaller than that of the ink ejected from the ink eject unit.