Abstract: A vertical JFET 1a according to the present invention has an n+ type drain semiconductor portion 2, an n-type drift semiconductor portion 3, a p+ type gate semiconductor portion 4, an n-type channel semiconductor portion 5, an n+ type source semiconductor portion 7, and a p+ type gate semiconductor portion 8. The n-type drift semiconductor portion 3 is placed on a principal surface of the n+ type drain semiconductor portion 2 and has first to fourth regions 3a to 3d extending in a direction intersecting with the principal surface. The p+ type gate semiconductor portion 4 is placed on the first to third regions 3a to 3c of the n-type drift semiconductor portion 3. The n-type channel semiconductor portion 5 is placed along the p+ type gate semiconductor portion 4 and is electrically connected to the fourth region 3d of the n-type drift semiconductor portion 3.

Abstract: The present invention aims to provide an etching solution composition which enables to etch a metal film in a controllable manner, form a desired definite tapered shape, and obtain a smooth surface without causing etching solution exudation trace. Said problems have been solved by the present invention, which is an etching solution composition for etching metal films containing one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid and the salts thereof.

Abstract: A lateral junction field effect transistor includes a first gate electrode layer (18A) arranged in a third semiconductor layer (13) between source/drain region layers (6, 8), having a lower surface extending on the second semiconductor layer (12), and doped with p-type impurities more heavily than the second semiconductor layer (12), and a second gate electrode layer (18B) arranged in a fifth semiconductor layer (15) between the source/drain region layers (6, 8), having a lower surface extending on a fourth semiconductor layer (14), having substantially the same concentration of p-type impurities as the first gate electrode layer (18A), and having the same potential as the first gate electrode layer (18A). Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

Abstract: A forklift has a travelling carriage, a straddle arm disposed on the travelling carriage, a mast disposed on the straddle arm to be reciprocally movable in a horizontal direction, a fork disposed on the mast to be movable up and down, and a cover disposed on the travelling carriage. When the mast is in a reach-in operation, the cover covers at least an upper side of an article supported by the fork.

Abstract: A forklift has a travelling carriage, a straddle arm disposed on the travelling carriage, a mast disposed on the straddle arm to be reciprocally movable in a horizontal direction, a fork disposed on the mast to be movable up and downm, and a cover disposed on the travelling carriage. When the mast is in a reach-in operation, the cover covers at least an upper side of an article supported by the fork.

Abstract: A remote control center sends a setting changing mail, to a portable telephone, that collectively changes the contents of a built-in memory and an attachable/detachable storage medium of the portable telephone 20. The portable telephone collectively updates the contents in the built-in memory and the storage medium based on the content of the setting changing mail.

Abstract: In an optical data recording/reproducing apparatus for performing write and read operations of data by irradiating laser light onto an optical data recording medium, in order to reduce noise of a semiconductor laser, an HF oscillator is provided to superpose an HF current on a drive current to be applied to the semiconductor laser. The HF oscillator is housed in a conductive shield case together with the semiconductor laser. An LC low-pass filter is also provided in a signal line connecting the components inside and outside the shield case to prevent undesired radiation of the HF current. A write drive line and a read drive line of the semiconductor laser are separated in the shield case, and the write drive line is disconnected from the HF oscillator in at least a read mode.