Abstract: To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/?m or more and 50% by mass/?m or less.

Abstract: A copper alloy for electronic and electrical equipment is provided, including: 0.15 mass % or greater and less than 0.35 mass % of Mg; 0.0005 mass % or greater and less than 0.01 mass % of P; and a remainder which is formed of Cu and unavoidable impurities, in which a conductivity is greater than 75% IACS, a content [Mg] (mass %) of Mg and a content [P] (mass %) of P satisfy a relational expression of [Mg]+20×[P]<0.5, and a content of H is 10 mass ppm or less, a content of O is 100 mass ppm or less, a content of S is 50 mass ppm or less, and a content of C is 10 mass ppm or less.

Abstract: A copper alloy plate including 0.3 mass % or more and 1.2 mass % or less of Mg, 0.001 mass % or more and 0.2 mass % or less of P, and the balance Cu with inevitable impurities in a thickness center portion in a plate thickness direction; Mg concentration on a plate surface is 30% or less of bulk Mg concentration at the thickness center portion; a surface layer part having a depth from the plate surface to where it is 90% of the bulk Mg concentration is provided; and in the surface layer part, the Mg concentration increases from the plate surface toward the thickness center portion with a concentration gradient 1.8 mass %/?m or more and 50 mass %/?m or less.

Abstract: Provided is a copper alloy for electronic and electrical equipment including: 0.15 mass % or greater and less than 0.35 mass % of Mg; 0.0005 mass % or greater and less than 0.01 mass % of P; and a remainder which is formed of Cu and unavoidable impurities, in which a conductivity is greater than 75% IACS, and an average number of compounds containing Mg and P with a particle diameter of 0.1 ?m or greater is 0.5 pieces/?m2 or less in observation using a scanning electron microscope.

Abstract: This copper alloy for electronic or electric devices includes: Mg: 0.15 mass % or greater and less than 0.35 mass %; and P: 0.0005 mass % or greater and less than 0.01 mass %, with a remainder being Cu and unavoidable impurities, wherein an amount of Mg [Mg] and an amount of P [P] in terms of mass ratio satisfy [Mg]+20×[P]<0.5, and 0.20<(NFJ2/(1?NFJ3))0.5?0.45 is satisfied in a case where a proportion of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to total grain boundary triple junctions is represented by NFJ3, and a proportion of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary is a random grain boundary, to the total grain boundary triple junctions is represented by NFJ2.

Abstract: This stabilizer material for superconductor includes a copper material, wherein the copper material contains one kind or two kinds or more of additive elements selected from Ca, La, and Ce for a total amount of 3 ppm by mass or more and 400 ppm by mass or less, with the remainder being Cu and unavoidable impurities, and the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or two kinds or more selected from CaS, CaSO4, LaS, La2SO2, CeS, and Ce2SO2 are present in the matrix.

Abstract: A copper alloy includes, by mass %: Mg: 0.15%-0.35%; and P: 0.0005%-0.01%, with a remainder being Cu and unavoidable impurities, wherein [Mg]+20×[P]<0.5 is satisfied. Among the unavoidable impurities, H is 10 mass ppm or less, O is 100 mass ppm or less, S is 50 mass ppm or less, and C is 10 mass ppm or less. In addition, 0.20<(NFJ2/(1?NFJ3))0.5?0.45 is satisfied where a proportion of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to a total grain boundary triple junctions is NFJ3, and a proportion of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary is a random grain boundary, to the total grain boundary triple junctions is NFJ2.

Abstract: The present invention is a superconducting wire including: a wire formed of a superconducting material; and a superconducting stabilization material disposed in contact with the wire, in which the superconducting stabilization material is formed of a copper material which contains: one or more types of additive elements selected from Ca, Sr, Ba, and rare earth elements in a total of 3 ppm by mass to 400 ppm by mass; a balance being Cu and inevitable impurities, and in which a total concentration of the inevitable impurities excluding O, H, C, N, and S which are gas components is 5 ppm by mass to 100 ppm by mass.

Abstract: A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 ?m to 1.2 ?m inclusive; the copper-tin alloy layer is a compound alloy layer in which Cu6Sn5 is a main ingredient and part of copper in the Cu6Sn5 is substituted with nickel, and an average crystal grain size is 0.2 ?m to 1.5 ?m inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 ?m to 1000 ?m inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.

Abstract: This superconducting wire includes: a strand including a superconducting material; and a stabilizer material for superconductor arranged in contact with the strand, wherein the stabilizer material for superconductor includes a copper material which contains one kind or two kinds or more of additive elements selected from Ca, Sr, Ba, and rare earth elements (RE) for a total amount of 3 ppm by mass or more and 400 ppm by mass or less, with the remainder being Cu and unavoidable impurities, the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or two kinds or more selected from CaS, CaSO4, SrS, SrSO4, BaS, BaSO4, (RE)S, and (RE)2SO2 are present in the matrix.

Abstract: The present invention is a superconducting stabilization material used for a superconducting wire, which is formed of a copper material which contains: one or more types of additive elements selected from Ca, La, and Ce in a total of 3 ppm by mass to 400 ppm by mass; and a balance being Cu and inevitable impurities and in which a total concentration of the inevitable impurities excluding O, H, C, N, and S which are gas components is 5 ppm by mass to 100 ppm by mass.

Abstract: The present invention is a superconducting wire including: a wire formed of a superconducting material; and a superconducting stabilization material disposed in contact with the wire, in which the superconducting stabilization material is formed of a copper material which contains: one or more types of additive elements selected from Ca, Sr, Ba, and rare earth elements in a total of 3 ppm by mass to 400 ppm by mass; a balance being Cu and inevitable impurities, and in which a total concentration of the inevitable impurities excluding O, H, C, N, and S which are gas components is 5 ppm by mass to 100 ppm by mass.

Abstract: A terminal material for connectors, which is obtained by sequentially laminating on a substrate that is formed of copper or a copper alloy, a nickel or nickel alloy layer, a copper-tin alloy layer and a tin layer in this order, and: the tin layer has an average thickness of from 0.2 ?m to 1.2 ?m (inclusive); the copper-tin alloy layer is a compound alloy layer that is mainly composed of Cu6Sn5, with some of the copper in the Cu6Sn5 being substituted by nickel, and has an average crystal grain diameter of from 0.2 ?m to 1.5 ?m (inclusive); a part of the copper-tin alloy layer is exposed from the surface of the tin layer, with the exposure area ratio being from 1% to 60% (inclusive); the nickel or nickel alloy layer has an average thickness of from 0.05 ?m to 1.0 ?m (inclusive) and an average crystal grain diameter of from 0.01 ?m to 0.5 ?m (inclusive).

Abstract: The present invention is a superconducting wire including: a wire formed of a superconducting material; and a superconducting stabilization material disposed in contact with the wire, in which the superconducting stabilization material is formed of a copper material which contains: one or more types of additive elements selected from Ca, Sr, Ba, and rare earth elements in a total of 3 ppm by mass to 400 ppm by mass; a balance being Cu and inevitable impurities, and in which a total concentration of the inevitable impurities excluding O, H, C, N, and S which are gas components is 5 ppm by mass to 100 ppm by mass.

Abstract: A copper alloy for electronic and electrical equipment is provided, including: 0.15 mass % or greater and less than 0.35 mass % of Mg; 0.0005 mass % or greater and less than 0.01 mass % of P; and a remainder which is formed of Cu and unavoidable impurities, in which a conductivity is greater than 75% IACS, a content [Mg] (mass %) of Mg and a content [P] (mass %) of P satisfy a relational expression of [Mg]+20×[P]<0.5, and a content of H is 10 mass ppm or less, a content of O is 100 mass ppm or less, a content of S is 50 mass ppm or less, and a content of C is 10 mass ppm or less.

Abstract: A copper alloy includes, by mass %: Mg: 0.15%-0.35%; and P: 0.0005%-0.01%, with a remainder being Cu and unavoidable impurities, wherein [Mg]+20×[P]<0.5 is satisfied. Among the unavoidable impurities, H is 10 mass ppm or less, O is 100 mass ppm or less, S is 50 mass ppm or less, and C is 10 mass ppm or less. In addition, 0.20<(NFJ2/(1?NFJ3))0.5?0.45 is satisfied where a proportion of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to a total grain boundary triple junctions is NFJ3, and a proportion of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary is a random grain boundary, to the total grain boundary triple junctions is NFJ2.

Abstract: A superconductivity stabilizing material used for a superconducting wire and which is formed of a copper material containing at least one of additive elements selected from Ca, Sr, Ba, and rare earth elements in a range of 3 ppm by mass or more and 100 ppm by mass or less in total, with a remainder being Cu and unavoidable impurities, in which the total concentration of the unavoidable impurities, excluding O, H, C, N, and S which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, the half-softening temperature thereof is 200° C. or lower, the Vickers hardness thereof is 55 Hv or more, and the residual resistance ratio (RRR) thereof is 50 or more and 500 or less.

Abstract: A copper alloy for an electronic and electric device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and a Cu balance including inevitable impurities, wherein the electrical conductivity of the copper alloy is more than 75% IACS, and a strength ratio TSTD/TSLD, which is calculated from strength TSTD obtained in a tensile test performed in a direction perpendicular to a rolling direction and strength TSLD obtained in a tensile test performed in a direction parallel to a rolling direction, is more than 0.9 and less than 1.1. The copper alloy may further include P in a range of 0.0005 mass % or more and less than 0.01 mass %.

Abstract: The stabilizer material for superconductor of the present invention is used for a superconducting wire, and the stabilizer material for superconductor includes a copper material, the copper material contains one kind or more of additive elements selected from Mg, Mn, Ti, Y, and Zr for a total amount of 3 ppm by mass or more and 100 ppm by mass or less, with the remainder being Cu and unavoidable impurities, the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or more selected from MgS, MgSO4, MnS, TiS, YS, Y2SO2, and ZrS are present in the matrix.

Abstract: A terminal material for connectors, which is obtained by sequentially laminating on a substrate that is formed of copper or a copper alloy, a nickel or nickel alloy layer, a copper-tin alloy layer and a tin layer in this order, and: the tin layer has an average thickness of from 0.2 ?m to 1.2 ?m (inclusive); the copper-tin alloy layer is a compound alloy layer that is mainly composed of Cu6Sn5, with some of the copper in the Cu6Sn5 being substituted by nickel, and has an average crystal grain diameter of from 0.2 ?m to 1.5 ?m (inclusive); a part of the copper-tin alloy layer is exposed from the surface of the tin layer, with the exposure area ratio being from 1% to 60% (inclusive); the nickel or nickel alloy layer has an average thickness of from 0.05 ?m to 1.0 ?m (inclusive) and an average crystal grain diameter of from 0.01 ?m to 0.5 ?m (inclusive).