Abstract: This copper alloy wire consists of a precipitation strengthening type copper alloy containing Co, P, and Sn, wherein an average grain size of precipitates observed through cross-sectional structure observation immediately after performing an intermediate aging heat treatment is equal to or less than 15 nm and a number of precipitates having grain sizes of equal to or less than 5 nm is 10% or higher of a total number of observed precipitates, and the copper alloy wire is subjected to cold working and a final aging heat treatment after the intermediate aging heat treatment.

Abstract: A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

Abstract: A copper alloy wire of the present invention consists of a precipitation strengthening type copper alloy containing Co, P, and Sn, wherein an average grain size of precipitates observed through cross-sectional structure observation immediately after performing an aging heat treatment is equal to or greater than 15 nm and a number of precipitates having grain sizes of equal to or greater than 5 nm is 80% or higher of a total number of observed precipitates, and the copper alloy wire is subjected to cold working after the aging heat treatment.

Abstract: A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %.

Abstract: What is provided is a copper alloy for electronic/electric device comprising: in mass %, more than 2% and 36.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.10% of Fe; 0.005% or more and 0.10% or less of P; and the balance Cu and inevitable impurities, wherein a content ratio of Fe to Ni, Fe/Ni satisfies 0.002?Fe/Ni<1.5, a content ratio of a sum of Ni and Fe, (Ni+Fe), to P satisfies 3<(Ni+Fe)/P<15, a content ratio of Sn to a sum of Ni and Fe, (Ni+Fe) satisfies 0.3<Sn/(Ni+Fe)<5, an average crystal grain diameter of ? phase containing Cu, Zn, and Sn is in a range of 0.1 to 50 ?m, and the copper alloy includes a precipitate containing P and one or more elements selected from Fe and Ni.

Abstract: Copper alloys according to first to third aspects contain Mg at a content of 3.3% by atom to 6.9% by atom, with the balance substantially being Cu and unavoidable impurities, wherein an oxygen content is in a range of 500 ppm by atom or less, and either one or both of the following conditions (a) and (b) are satisfied: (a) when a Mg content is set to X % by atom, an electrical conductivity ? (% IACS) satisfies the following Expression (1), ??{1.7241/(?0.0347×X2+0.6569×X+1.7)}×100 (1); and (b) an average number of intermetallic compounds, which have grain sizes of 0.1 ?m or more and contain Cu and Mg as main components, is in a range of 1 piece/?m2 or less. A copper alloy according to a fourth aspect further contains one or more selected from a group consisting of Al, Ni, Si, Mn, Li, Ti, Fe, Co, Cr, and Zr at a total content of 0.01% by atom to 3.0% by atom, and satisfies the condition (b).

Abstract: A copper alloy for electronic devices has a low Young's modulus, high proof stress, high electrical conductivity and excellent bending formability and is appropriate for a component for electronic devices including a terminal, a connector, a relay and a lead frame. Also a method of manufacturing a copper alloy utilizes a copper alloy plastic working material for electronic devices, and a component for electronic devices. The copper alloy includes Mg at 3.3 to 6.9 at %, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is X at %, an electrical conductivity ? (% IACS) is in a range of ??{1.7241/(?0.0347×X2+0.6569×X+1.7)}×100, and an average grain size is in a range of 1 ?m-100 ?m. In addition, an average grain size of a copper material after an intermediate heat treatment and before finishing working is in a range of 1 ?m-100 ?m.

Abstract: This copper alloy for electronic devices includes Mg at a content of 3.3 at % or more and 6.9 at % or less, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is given as X at %, an electrical conductivity ? (% IACS) is in a range of ??{1.7241/(?0.0347×X2+0.6569×X+1.7)}×100, and a stress relaxation rate at 150° C. after 1,000 hours is in a range of 50% or less.

Abstract: One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity ? (% IACS) is within the following range when the content of Mg is given as A atomic %, ??{1.7241/(?0.0347×A2+0.6569×A+1.7)}×100. Another aspect of this copper alloy is composed of a ternary alloy of Cu, Mg, and Zn which includes Mg at a content of 3.3 to 6.9 atomic % and Zn at a content of 0.1 to 10 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity ? (% IACS) is within the following range when the content of Mg is given as A atomic % and the content of Zn is given as B atomic %, ??{1.7241/(X+Y+1.7)}×100, X=?0.0347×A2+0.6569×A and Y=?0.0041×B2+0.2503×B.

Abstract: This copper alloy with high strength and high electrical conductivity includes: Mg: more than 1.0% by mass to less than 4% by mass; and Sn: more than 0.1% by mass to less than 5% by mass, with a remainder including Cu and inevitable impurities, wherein a mass ratio Mg/Sn of a content of Mg to a content of Sn is in a range of 0.4 or more. This copper alloy with high strength and high electrical conductivity may further include Ni: more than 0.1% by mass to less than 7% by mass.

Abstract: A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

Abstract: An aspect of this copper alloy contains: Mg at a content of 3.3 at % or more to less than 6.9 at %; and either one or both of Cr and Zr at respective contents of 0.001 at % to 0.15 at %, with the balance being Cu and inevitable impurities, wherein when the content of Mg is represented by A at %, a conductivity ? (% IACS) satisfies the following Expression (1), ??{1.7241/(?0.0347×A2+0.6569×A+1.7)}×100 ??(1). An aspect of this method for producing a copper alloy includes: heating a copper material having the composition of the copper alloy to a temperature of 300° C. to 900° C.; rapidly cooling the heated copper material to a temperature of 200° C. or lower at a cooling rate of 200° C./min or greater; and subjecting the rapidly cooled copper material to working.

Abstract: What is provided is a copper alloy for electronic/electric device comprising: in mass %, more than 2% and 36.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.10% of Fe; 0.005% or more and 0.10% or less of P; and the balance Cu and inevitable impurities, wherein a content ratio of Fe to Ni, Fe/Ni satisfies 0.002?Fe/Ni<1.5, a content ratio of a sum of Ni and Fe, (Ni+Fe), to P satisfies 3<(Ni+Fe)/P<15, a content ratio of Sn to a sum of Ni and Fe, (Ni+Fe) satisfies 0.3<Sn/(Ni+Fe)<5, an average crystal grain diameter of ? phase containing Cu, Zn, and Sn is in a range of 0.1 to 50 ?m, and the copper alloy includes a precipitate containing P and one or more elements selected from Fe and Ni.

Abstract: This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

Abstract: This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.

Abstract: A copper alloy for an electric device contains Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities. A method of producing a copper alloy includes: performing heating of a copper material to a temperature of not lower than 500° C. and not higher than 1000° C.; performing quenching to cool the heated copper material to 200° C. or lower with a cooling rate of 200° C./min or more; and performing working of the cooled copper material, wherein the copper material is composed of a copper alloy containing Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less.

Abstract: A copper alloy for an electronic device containing Mg in a range of 2.6 atomic % or more and 9.8 atomic % or less, Al in a range of 0.1 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities.

Abstract: One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity ? (% IACS) is within the following range when the content of Mg is given as A atomic %, ??{1.7241/(?0.0347×A2+0.6569×A+1.7)}×100. Another aspect of this copper alloy for an electronic device is composed of a ternary alloy of Cu, Mg, and Zn which includes Mg at a content of 3.3 to 6.9 atomic % and Zn at a content of 0.1 to 10 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity ? (% IACS) is within the following range when the content of Mg is given as A atomic % and the content of Zn is given as B atomic %, ??{1.7241/(X+Y+1.7)}×100 X=?0.0347×A2+0.6569×A Y=?0.0041×B2+0.2503×B.

Abstract: This copper alloy with high strength and high electrical conductivity includes: Mg: more than 1.0% by mass to less than 4% by mass; and Sn: more than 0.1% by mass to less than 5% by mass, with a remainder including Cu and inevitable impurities, wherein a mass ratio Mg/Sn of a content of Mg to a content of Sn is in a range of 0.4 or more. This copper alloy with high strength and high electrical conductivity may further include Ni: more than 0.1% by mass to less than 7% by mass.

Abstract: This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.