Abstract: This stabilizer material for superconductor includes a copper material, wherein the copper material contains one kind or two kinds or more of additive elements selected from Ca, La, and Ce for a total amount of 3 ppm by mass or more and 400 ppm by mass or less, with the remainder being Cu and unavoidable impurities, and the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or two kinds or more selected from CaS, CaSO4, LaS, La2SO2, CeS, and Ce2SO2 are present in the matrix.

Abstract: Copper alloys according to first to third aspects contain Mg at a content of 3.3% by atom to 6.9% by atom, with the balance substantially being Cu and unavoidable impurities, wherein an oxygen content is in a range of 500 ppm by atom or less, and either one or both of the following conditions (a) and (b) are satisfied: (a) when a Mg content is set to X % by atom, an electrical conductivity ? (% IACS) satisfies the following Expression (1), ??{1.7241/(?0.0347×X2+0.6569×X+1.7)}×100??(1); and (b) an average number of intermetallic compounds, which have grain sizes of 0.1 ?m or more and contain Cu and Mg as main components, is in a range of 1 piece/?m2 or less. A copper alloy according to a fourth aspect further contains one or more selected from a group consisting of Al, Ni, Si, Mn, Li, Ti, Fe, Co, Cr, and Zr at a total content of 0.01% by atom to 3.0% by atom, and satisfies the condition (b).

Abstract: A copper alloy for and electric and an electronic device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; Pin a range of 0.0005 mass % or more and less than 0.01 mass %; and a Cu balance including inevitable impurities. In the copper alloy, a Mg content [Mg] and a P content [P], both of which are in a mass ratio, satisfy a relationship expressed by [Mg]+20×[P]<0.5, and an electrical conductivity of the copper alloy is more than 75% IACS.

Abstract: Provided are a copper alloy for electric and electronic devices, a copper alloy sheet for electric and electronic devices, a component for electric and electronic devices, a terminal, and a bus bar. The copper alloy for electric and electronic devices includes, as a composition: 0.01 mass % or higher and lower than 0.11 mass % of Zr; 0.002 mass % or higher and lower than 0.03 mass % of Si; and a balance including Cu and unavoidable impurities, in which a ratio Zr/Si of the Zr content (mass %) to the Si content (mass %) is within a range of 2 to 30.

Abstract: The present invention provides a copper alloy for electronic and electronic device which has excellent mechanical properties and is capable of suppressing generation of defects even in a case in which the copper alloy is worked to a thin plate thickness or a smaller wire diameter than in the related art, a plastically-worked copper alloy material, and a component and a terminal for electronic and electronic device. The copper alloy for electronic and electronic device of the present invention includes Mg in a range of 1.3 mass % to 2.8 mass % with a remainder substantially being Cu and inevitable impurities, in which a content of H is set to 10 mass ppm or lower, a content of O is set to 100 mass ppm or lower, a content of S is set to 50 mass ppm or lower, and a content of C is set to 10 mass ppm or lower.

Abstract: This superconducting wire includes: a strand including a superconducting material; and a stabilizer material for superconductor arranged in contact with the strand, wherein the stabilizer material for superconductor includes a copper material which contains one kind or two kinds or more of additive elements selected from Ca, Sr, Ba, and rare earth elements (RE) for a total amount of 3 ppm by mass or more and 400 ppm by mass or less, with the remainder being Cu and unavoidable impurities, the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or two kinds or more selected from CaS, CaSO4, SrS, SrSO4, BaS, BaSO4, (RE)S, and (RE)2SO2 are present in the matrix.

Abstract: Provided is a copper alloy for electronic and electrical equipment including: 0.15 mass % or greater and less than 0.35 mass % of Mg; 0.0005 mass % or greater and less than 0.01 mass % of P; and a remainder which is formed of Cu and unavoidable impurities, in which a conductivity is greater than 75% IACS, and an average number of compounds containing Mg and P with a particle diameter of 0.1 ?m or greater is 0.5 pieces/?m2 or less in observation using a scanning electron microscope.

Abstract: One aspect of this copper alloy for an electronic and electrical equipment contains: more than 2.0 mass % to 36.5 mass % of Zn; 0.10 mass % to 0.90 mass % of Sn; 0.15 mass % to less than 1.00 mass % of Ni; and 0.005 mass % to 0.100 mass % of P, with the balance containing Cu and inevitable impurities, wherein atomic ratios of amounts of elements satisfy 3.00<Ni/P<100.00 and 0.10<Sn/Ni<2.90, and a strength ratio TSTD/TSLD of tensile strength TSTD in a direction perpendicular to a rolling direction to tensile strength TSLD in a direction parallel to the rolling direction exceeds 1.09.

Abstract: This copper alloy for an electronic/electric device includes Mg at an amount of 3.3 atom % to 6.9 atom % with a remainder substantially being Cu and inevitable impurities, wherein a strength ratio TSTD/TSLD is more than 1.02, and the strength ratio TSTD/TSLD is calculated from a strength TSTD measured by a tensile test carried out in a direction perpendicular to a rolling direction and a strength TSLD measured by a tensile test carried out in a direction parallel to the rolling direction.

Abstract: A copper alloy for electronic devices has a low Young's modulus, high proof stress, high electrical conductivity and excellent bending formability and is appropriate for a component for electronic devices including a terminal, a connector, a relay and a lead frame. Also a method of manufacturing a copper alloy utilizes a copper alloy plastic working material for electronic devices, and a component for electronic devices. The copper alloy includes Mg at 3.3 to 6.9 at %, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is X at %, an electrical conductivity ? (% IACS) is in a range of ??{1.7241/(?0.0347×X2+0.6569×X+1.7)}×100, and an average grain size is in a range of 1 ?m-100 ?m. In addition, an average grain size of a copper material after an intermediate heat treatment and before finishing working is in a range of 1 ?m-100 ?m.

Abstract: A copper alloy for an electronic and electric device includes: Mg in a range of 0.1 mass % or more and less than 0.5 mass %; and a Cu balance including inevitable impurities, wherein a graph, in which a vertical axis is d?t/d?t and a horizontal axis is a true strain ?t, d?t/d?t being defined by a true stress ?t and the true strain ?t, obtained in a tensile test of the copper alloy, has a strained region that has a positive slope of d?t/d?t.

Abstract: Provided is a copper alloy for an electronic and electric device, including: Mg in a range of 0.5 mass % or more and 3.0 mass % or less; and a Cu balance including inevitable impurities, in which, a graph, in which a vertical axis is d?t/d?t and a horizontal axis is a true strain ?t, d?t/d?t being defined by a true stress ?t and the true strain ?t, obtained in a tensile test of the copper alloy, has a strained region that has a positive slope of d?t/d?t.

Abstract: This copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which is composed of Mg at a content of 3.3 to 6.9 atomic %, and a remainder of Cu and inevitable impurities, and a conductivity ? (% IACS) is within the following range when the content of Mg is given as A atomic %, and/or an average number of intermetallic compounds having grain sizes of 0.1 ?m or more is in a range of 1/?m2 or less, ??{1.7241/(?0.0347×A2+0.6569×A+1.7)}×100.

Abstract: A copper alloy for an electronic and electric device includes: Mg in a range of 0.1 mass % or more and less than 0.5 mass %; and a Cu balance including inevitable impurities, wherein a graph, in which a vertical axis is d?t/d?t and a horizontal axis is a true strain ?t, d?t/d?t being defined by a true stress ?t and the true strain ?t, obtained in a tensile test of the copper alloy, has a strained region that has a positive slope of d?t/d?t.

Abstract: One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity ? (% IACS) is within the following range when the content of Mg is given as A atomic %, ??{1.7241/(?0.0347×A2+0.6569×A+1.7)}×100. Another aspect of this copper alloy is composed of a ternary alloy of Cu, Mg, and Zn which includes Mg at a content of 3.3 to 6.9 atomic % and Zn at a content of 0.1 to 10 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity ? (% IACS) is within the following range when the content of Mg is given as A atomic % and the content of Zn is given as B atomic %, ??{1.7241/(X+Y+1.7)}×100, X=?0.0347×A2+0.6569×A and Y=?0.0041×B2+0.2503×B.

Abstract: A copper alloy for an electronic and electric device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and a Cu balance including inevitable impurities, wherein the electrical conductivity of the copper alloy is more than 75% IACS, and a strength ratio TSTD/TSLD, which is calculated from strength TSTD obtained in a tensile test performed in a direction perpendicular to a rolling direction and strength TSLD obtained in a tensile test performed in a direction parallel to a rolling direction, is more than 0.9 and less than 1.1. The copper alloy may further include P in a range of 0.0005 mass % or more and less than 0.01 mass %.

Abstract: A copper alloy for an electronic and electric device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and a Cu balance including inevitable impurities, wherein the electrical conductivity of the copper alloy is more than 75% IACS, and a yield ratio YS/TS, which is calculated from strength TS in a tensile test performed in a direction parallel to a rolling direction and 0.2% yield strength YS, is more than 88%. The copper alloy may further include P in a range of 0.0005 mass % or more and less than 0.01 mass %.

Abstract: A hot-rolled copper plate consists of pure copper having a purity of 99.99 mass % or greater, the hot-rolled copper plate having an average crystal grain diameter of 40 ?m or less, and a (?3+?9) grain boundary length ratio (L (?3+?9)/L), which is a ratio between a total crystal grain boundary length L measured by an EBSD method and a sum L (?3+?9) of a ?3 grain boundary length L?3 and a ?9 grain boundary length L?9, being 28% or greater.

Abstract: A copper alloy for and electric and an electronic device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; Pin a range of 0.0005 mass % or more and less than 0.01 mass %; and a Cu balance including inevitable impurities. In the copper alloy, a Mg content [Mg] and a P content [P], both of which are in a mass ratio, satisfy a relationship expressed by [Mg]+20×[P]<0.5, and an electrical conductivity of the copper alloy is more than 75% IACS.

Abstract: The present invention is a superconducting wire including: a wire formed of a superconducting material; and a superconducting stabilization material disposed in contact with the wire, in which the superconducting stabilization material is formed of a copper material which contains: one or more types of additive elements selected from Ca, Sr, Ba, and rare earth elements in a total of 3 ppm by mass to 400 ppm by mass; a balance being Cu and inevitable impurities, and in which a total concentration of the inevitable impurities excluding O, H, C, N, and S which are gas components is 5 ppm by mass to 100 ppm by mass.