Abstract: Composite particles of the present invention comprise white inorganic particles, a surface modifier coating layer formed on surface of the respective white inorganic particles, and a dye or lake coat adhered onto the surface of the respective surface-modifier-coated white inorganic particles. The composite particles of the present invention not only exhibit excellent color-developing property and tinting strength but also suppress bleeding.

Abstract: To provide an EUV mask blank which has an absorber layer having such a structure that the phase difference between a reflective layer and the absorber layer is in the vicinity of 180°, and the change of the phase difference between the reflective layer and the absorber layer is small to the film thick change of the absorber layer, and of which the absorber layer can be expected to be further thinner than a conventional absorber layer.

Abstract: A process for producing a reflective mask blank for EUV lithography (EUVL), which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate, then forming a protective layer for protecting the multilayer reflective film, on the multilayer reflective film, and forming an absorber layer for absorbing EUV light, on the protective layer, to produce a reflective mask blank for EUVL, wherein the multilayer reflective film is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, the absorber layer is a layer containing at least Ta and N, and after forming the Mo/Si multilayer reflective film, the protective layer is formed, and after forming a Si thin film or Si oxide thin film having a thickness of at most 2 nm on the protective layer, the absorber layer is formed.

Abstract: A method for producing an L-amino acid is provided. An L-amino acid is produced by culturing a coryneform bacterium having an L-amino acid-producing ability, which is modified so that the activity of a phosphate transporter is increased, in a medium, and collecting the L-amino acid from the medium.

Abstract: A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a substrate and a conductive film formed on the substrate, wherein the conductive film has at least two layers of a lower layer formed on the substrate side and an upper layer formed on the lower layer; the lower layer is a CrN type film which contains Cr and N; the upper layer is a CrON type film which contains Cr, N and O; in the CrN type film, the total content of Cr and N is at least 85 at %, and the compositional atomic ratio of Cr to N is Cr:N=9.5:0.5 to 3:7; in the CrON type film, the total content of Cr, N and O is at least 85 at %, and the compositional atomic ratio of Cr to (N+O) is Cr:(N+O)=9.5:0.5 to 3:7; and the film thickness of the CrON type film is from 0.5 to 3 nm, and the standard deviation of the film thickness distribution of the CrON type film is at most 0.18 nm.

Abstract: A polarization-maintaining optical fiber of the invention includes: a core; a pair of stress-applying parts disposed at both sides of the core at a distance; and a cladding coat that surrounds the core and the paired stress-applying parts. The maximum refractive index of the core is greater than each of maximum refractive indexes of a first cladding coat, a second cladding coat, and a third cladding coat. The maximum refractive index of the second cladding coat is lower than each of maximum refractive indexes of the first cladding coat and the third cladding coat. The coefficient of thermal expansion of each of stress-applying parts is greater than a coefficient of thermal expansion of the cladding coat. Each stress-applying part is provided to cut the second cladding coat at a position in a circumferential direction.

Abstract: To provide an EUV mask blank with which the etching selectivity under etching conditions for absorber layer is sufficiently high, line edge roughness after pattern formation will not be large, and a pattern with high resolution can be obtained. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate; wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component; the hard mask layer contains chromium (Cr), either one of nitrogen (N) and oxygen (O) and hydrogen (H); and in the hard mask layer, the total content of Cr and either one of N and O is from 85 to 99.9 at %, and the content of H is from 0.1 to 15 at %.

Abstract: To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).

Abstract: The present invention relates to a negative electrode active substance for non-aqueous electrolyte secondary batteries comprising composite particles comprising metal particles, and a thermosetting resin or a carbonized product of the thermosetting resin, the composite particles having an average particle diameter of 5 to 100 ?m; and a lithium ion secondary battery using the negative electrode active substance for non-aqueous electrolyte secondary batteries. The lithium ion secondary battery of the present invention is a non-aqueous electrolyte secondary battery that is prevented from suffering from volume expansion owing to occlusion of Li therein.

Abstract: To provide an EUV mask blank provided with a low reflective layer, which has excellent properties as an EUV mask blank. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a low reflective layer to an inspection light (wavelength: 190 to 260 nm) for a mask pattern, formed in this order on the substrate, wherein the low reflective layer has a stacked structure having a first layer containing at least 95 at % in total of silicon (Si) and nitrogen (N), and a second layer containing at least 95 at % in total of tantalum (Ta), oxygen (O) and nitrogen (N) or a second layer containing at least 95 at % in total of tantalum (Ta) and nitrogen (N), stacked in this order from the absorber layer side.

Abstract: A polarization-maintaining optical fiber of the present invention includes a core, a pair of stress-applying parts provided on both sides of the core, and a cladding surrounding the core and the stress-applying parts, and is used in a wavelength range of 400 to 680 nm. The diameter of the cladding is 125 ?m, the diameter of the stress-applying part is 33 to 37 ?m, a distance between the pair of stress-applying parts is 8.6 to 15.4 ?m, a relative refractive index difference between the core and the cladding is 0.35 to 0.45%, and a cut-off wavelength is less than or equal to 400 nm.

Abstract: To provide a reflective mask blank for EUV lithography having an absorber layer having optical constants suitable for reducing the thickness. A mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and palladium (Pd), and in the absorber layer, the content of tantalum (Ta) is from 10 to 80 at %, the content of palladium (Pd) is from 20 to 90 at %, and the total content of Ta and Pd is from 95 to 100 at %.

Abstract: To provide an EUV mask blank which has an absorber layer having such a structure that the phase difference between a reflective layer and the absorber layer is in the vicinity of 180°, and the change of the phase difference between the reflective layer and the absorber layer is small to the film thick change of the absorber layer, and of which the absorber layer can be expected to be further thinner than a conventional absorber layer.

Abstract: The present invention relates to a blank for a nanoimprint mold, comprising a glass substrate and a hard mask layer formed on the glass substrate, wherein the hard mask layer contains chromium (Cr) and nitrogen (N) and has a Cr content of 45 to 95 at %, an N content of 5 to 55 at % and a total content of Cr and N of 95 at % or more and the thickness of the hard mask layer is 1.5 nm or more and less than 5 nm.

Abstract: The present invention relates to non-magnetic particles for non-magnetic undercoat layer of magnetic recording medium, comprising: hematite particles; an inner coating layer comprising a phosphorus-containing inorganic compound which is formed on a surface of the respective hematite particles; and an outer coating layer comprising an aluminum-containing inorganic compound which is formed on an outside of the inner coating layer comprising the phosphorus-containing inorganic compound.

Abstract: A low-loss optical fiber over wide wavelength range includes a transmission loss of less than or equal to 40 dB/km in a whole wavelength range of 400-1400 nm, and being manufactured by drawing an optical fiber preform including a core composed of a silica glass having a hydroxyl-group concentration of less than or equal to 1 ppm and a cladding composed of a silica glass having a fluorine concentration of more than or equal to 3.2 wt %.

Abstract: A reflective mask for an extreme ultra violet (EUV) lithography obtained by forming a mask pattern in an absorber layer of an reflective mask blank is useful in semiconductor production. The EUV reflective mask has two regions of a mask pattern region and a region outside the mask pattern region. The mask pattern region has the absorber layer and a non-absorber layer on the reflective layer of an substrate, wherein the region outside the mask pattern region has an EUV reflective layer, an EUV absorber layer, and a light shielding layer for suppressing reflection of EUV light and DUV-Vis light having a wavelength of from 190 to 500 nm. The EUV reflective mask reduces unnecessary exposure of resist formed on a substrate to reflected light from the region outside the mask pattern region and reduces a pattern size to produce an accurate transfer pattern.

Abstract: A process for producing a reflective mask blank for EUV lithography (EUVL), which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate, then forming a protective layer for protecting the multilayer reflective film, on the multilayer reflective film, and forming an absorber layer for absorbing EUV light, on the protective layer, to produce a reflective mask blank for EUVL, wherein the multilayer reflective film is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, the absorber layer is a layer containing at least Ta and N, and after forming the Mo/Si multilayer reflective film, the protective layer is formed, and after forming a Si thin film or Si oxide thin film having a thickness of at most 2 nm on the protective layer, the absorber layer is formed.

Abstract: The polarization-maintaining fiber of the invention includes a core (1) made of germanium doped silica glass; a stress-applying part (3) made of boron doped silica glass; a cladding (2) made of pure silica glass; and a polyimide coating layer (4) with a thickness of 10 ?m or less that surrounds the outer periphery of the cladding (2).

Abstract: To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).