Abstract: A method is provided for producing an L-amino acid which includes the steps of culturing a bacterium, which belongs to the family Enterobacteriaceae and is able to produce an L-amino acid, in a medium containing glycerol as a carbon source to produce and accumulate an L-amino acid in the medium, and collecting the L-amino acid from the culture. The culture is performed as a fed-batch culture or a continuous culture, and a feed medium containing glycerol is added to the fermentation medium so that the glycerol concentration in the fermentation medium is 5 g/L or higher.

Abstract: A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled. A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.

Abstract: A glass run includes a main body portion including a base bottom portion, a vehicle exterior side wall portion and a vehicle interior side wall portion attached along an inner periphery of a door frame and seal lips extended to an inner side of the main body portion and an entire region in a longitudinal direction thereof is formed by extrusion. The base bottom portion and the vehicle exterior side wall portion and the base bottom portion and the vehicle interior side wall portion are respectively connected by deformed connecting portions. The deformed connecting portion is thin-walled more than the base bottom portion and the two side wall portions and constitutes substantially a J-like shape in a section thereof to provide a predetermined length in a width direction.

Abstract: Provided are a substrate with a conductive film for an EUV mask blank in which the generation of particles due to abrasion between an electrostatic chuck and the substrate is prevented; and a substrate with a multilayer reflective film and an EUV mask blank each employing such a substrate with a conductive film. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, the conductive film containing chromium (Cr) and nitrogen (N), the average concentration of N in the conductive film being at least 0.1 atomic % and less than 40 atomic %, the crystal state of at least a surface of the conductive film being amorphous, the sheet resistance of the conductive film being at most 27 ?/?, and the surface roughness (rms) of the conductive film being at most 0.5 nm.

Abstract: A reflective mask blank for EUV lithography having a low-reflective layer which has a low reflectivity with respect to wavelengths of EUV light and a mask pattern inspection light and which satisfies a predetermined reflectivity (405 nm: <40%, 600 to 650 nm: 30 to 50%, 800 to 900 nm: >50%, 1,000 to 1,200 nm: <90%) in a wavelength region (400 to 1,200 nm) required for the mask production process and the pattern transcription process. A reflective mask blank for EUV lithography having a reflective layer for reflecting EUV light, an absorbing layer for absorbing EUV light and a low-reflective layer with respect to a mask pattern inspection light (wavelength: 190 to 260 nm), which are formed in this order on a substrate, wherein the low-reflective layer contains at least tantalum (Ta), oxygen (O) and hydrogen (H), and the low-reflective layer has a Ta+O total content that is between 85 and 99.9 at % and an H content that is between 0.1 and 15 at %.

Abstract: A reflective mask blank for EUV lithography having an absorbing layer which has a low reflectivity with respect to wavelength regions of EUV light and pattern inspection light, and which is easily controllable to obtain desired film composition and film thickness. The reflective mask blank for EUV lithography having a reflective layer for reflecting EUV light and an absorbing layer for absorbing EUV light which are formed in this order on a substrate, wherein the absorbing layer contains at least tantalum (Ta), boron (B), nitrogen (N) and hydrogen (H), and the absorbing layer has a B content that is 1 at % or greater but less than 5 at %, an H content that is between 0.1 and 5 at %, a Ta+N total content that is between 90 and 98.9%, and a Ta:N composition ratio (Ta:N) that is between 8:1 and 1:1.

Abstract: Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask. A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.

Abstract: To provide a reflective mask blank for EUV lithography having a low reflective layer having a low reflectance in the wavelength region of EUV light and an inspection light for a mask pattern, particularly having low reflection properties in the entire wavelength region (190 to 260 nm) of an inspection light for a mask pattern, and having a high etching rate in chlorine type gas etching. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer to reflect EUV light, an absorber layer to absorb EUV light and a low reflective layer to an inspection light (wavelength:190 nm to 260 nm) for a mask pattern, formed in this order over the substrate, wherein the low reflective layer contains silicon (Si) and nitrogen (N) in a total content of at least 95 at %, has a Si content of from 5 to 80 at %, and a N content of from 15 to 90 at %.

Abstract: There are provided colored composite microparticles having a fine primary particle diameter and exhibiting a high tinting strength, an excellent dispersibility and an excellent light fastness; a process for producing the colored composite microparticles; and a dispersion of the colored composite microparticles. The colored composite microparticles are composite particles comprising silica and an organic pigment in which the silica is enclosed in the organic pigment and contained in an amount of 0.001 to 9% by weight (calculated as Si) based on the weight of the composite particles. The coloring composition for color filters is prepared by dispersing a colorant for color filters comprising the colored composite microparticles in a coloring composition base material, whereas the ink for ink-jet printing is prepared by dispersing a colorant for inks for ink-jet printing comprising the colored composite microparticles in an ink base solution.

Abstract: To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

Abstract: A silica-based multi core optical fiber and a fabrication method for the same are provided, and include two or more cores of GeO2—SiO2 glass including an fluorine concentration not less than about 15 w % and a germanium concentration about 0.05 wt % to 2 wt %, in a core. A relative refractive index difference of a cladding and a core is not less than about 3%; and a ratio of a cladding diameter to a core diameter is about 1.02 to 3.0. A silica-based single core optical fiber is also provided, and includes a core having a germanium concentration not less than about 15 wt % and an fluorine concentration about 0.05 wt % to 2 wt %.

Abstract: To provide a sputtering target to be used for production of an EUV mask blank, capable of preventing particles by film peeling even when formation of a reflective multilayer film as a reflective layer and a Ru layer as a protective layer is carried out at a production level using actual machines for a large number of cycles. A sputtering target for forming a ruthenium (Ru) layer in a reflective layer for reflecting EUV light on a substrate, which contains Ru and at least one element selected from the group consisting of boron (B) and zirconium (Zr) in a total content of B and Zr of from 5 at % to 50 at %.

Abstract: A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled. A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.

Abstract: To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank. A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.

Abstract: A soft magnetic material is a soft magnetic material including a composite magnetic particle (30) having a metal magnetic particle (10) mainly composed of Fe and an insulating coating (20) covering metal magnetic particle (10), and insulating coating (20) contains an iron phosphate compound and an aluminum phosphate compound. The atomic ratio of Fe contained in a contact surface of insulating coating (20) in contact with metal magnetic particle (10) is larger than the atomic ratio of Fe contained in the surface of insulating coating (20). The atomic ratio of Al contained in the contact surface of insulating coating (20) in contact with metal magnetic particle (10) is smaller than the atomic ratio of Al contained in the surface of insulating coating (20). Thus, iron loss can be reduced.

Abstract: A color agent for a road marking material comprising composite particles having an average particle diameter of 0.01 to 10.0 ?m, said composite particles comprising: inorganic particles; a gluing agent coating layer formed on surface of said inorganic particle; and an organic pigment coat formed onto said gluing agent coating layer in an amount of from 1 to 500 parts by weight based on 100 parts by weight of said inorganic particles. The color agent for a road marking material, contains no harmful elements and exhibits excellent tinting strength, hiding power, light resistance and heat resistance, and is suppressed in surface activity thereof. The road marking material using the color agent, shows a less change in hue with the passage of time and an excellent retroreflective property.

Abstract: A soft magnetic material is a soft magnetic material including a composite magnetic particle (30) having a metal magnetic particle (10) mainly composed of Fe and an insulating coating (20) covering metal magnetic particle (10), and insulating coating (20) contains an iron phosphate compound and an aluminum phosphate compound. The atomic ratio of Fe contained in a contact surface of insulating coating (20) in contact with metal magnetic particle (10) is larger than the atomic ratio of Fe contained in the surface of insulating coating (20). The atomic ratio of Al contained in the contact surface of insulating coating (20) in contact with metal magnetic particle (10) is smaller than the atomic ratio of Al contained in the surface of insulating coating (20). Thus, iron loss can be reduced.

Abstract: To provide a substrate with a conductive film for an EUV mask blank having an increased surface hardness, and a substrate with a reflective multilayer film and an EUV mask blank using such a substrate with a conductive film. A substrate with a conductive film to be used for production of a reflective mask blank for EUV lithography, characterized in that the chief material of the conductive film is at least one member selected from the group consisting of Cr, Ti, Zr, Nb, Ni and V, and the conductive film contains B (boron) at an average concentration of from 1 to 70 at %.

Abstract: A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %, and wherein the absorber layer has a content of N being 0 to at most 35 at. %.

Abstract: To provide a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in a wavelength region of EUV light or light for inspection of a pattern and which is easy to control to have a desired layer composition and thickness. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %.