Abstract: The present invention relates to a blank for a nanoimprint mold, comprising a glass substrate and a hard mask layer formed on the glass substrate, wherein the hard mask layer contains chromium (Cr) and nitrogen (N) and has a Cr content of 45 to 95 at %, an N content of 5 to 55 at % and a total content of Cr and N of 95 at % or more and the thickness of the hard mask layer is 1.5 nm or more and less than 5 nm.

Abstract: The present invention relates to non-magnetic particles for non-magnetic undercoat layer of magnetic recording medium, comprising: hematite particles; an inner coating layer comprising a phosphorus-containing inorganic compound which is formed on a surface of the respective hematite particles; and an outer coating layer comprising an aluminum-containing inorganic compound which is formed on an outside of the inner coating layer comprising the phosphorus-containing inorganic compound.

Abstract: A low-loss optical fiber over wide wavelength range includes a transmission loss of less than or equal to 40 dB/km in a whole wavelength range of 400-1400 nm, and being manufactured by drawing an optical fiber preform including a core composed of a silica glass having a hydroxyl-group concentration of less than or equal to 1 ppm and a cladding composed of a silica glass having a fluorine concentration of more than or equal to 3.2 wt %.

Abstract: A reflective mask for an extreme ultra violet (EUV) lithography obtained by forming a mask pattern in an absorber layer of an reflective mask blank is useful in semiconductor production. The EUV reflective mask has two regions of a mask pattern region and a region outside the mask pattern region. The mask pattern region has the absorber layer and a non-absorber layer on the reflective layer of an substrate, wherein the region outside the mask pattern region has an EUV reflective layer, an EUV absorber layer, and a light shielding layer for suppressing reflection of EUV light and DUV-Vis light having a wavelength of from 190 to 500 nm. The EUV reflective mask reduces unnecessary exposure of resist formed on a substrate to reflected light from the region outside the mask pattern region and reduces a pattern size to produce an accurate transfer pattern.

Abstract: A process for producing a reflective mask blank for EUV lithography (EUVL), which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate, then forming a protective layer for protecting the multilayer reflective film, on the multilayer reflective film, and forming an absorber layer for absorbing EUV light, on the protective layer, to produce a reflective mask blank for EUVL, wherein the multilayer reflective film is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, the absorber layer is a layer containing at least Ta and N, and after forming the Mo/Si multilayer reflective film, the protective layer is formed, and after forming a Si thin film or Si oxide thin film having a thickness of at most 2 nm on the protective layer, the absorber layer is formed.

Abstract: The polarization-maintaining fiber of the invention includes a core (1) made of germanium doped silica glass; a stress-applying part (3) made of boron doped silica glass; a cladding (2) made of pure silica glass; and a polyimide coating layer (4) with a thickness of 10 ?m or less that surrounds the outer periphery of the cladding (2).

Abstract: To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).

Abstract: To provide an EUV mask blank with which the etching selectivity under etching conditions for absorber layer is sufficiently high, line edge roughness after pattern formation will not be large, and a pattern with high resolution can be obtained. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate; wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component; the hard mask layer contains chromium (Cr), either one of nitrogen (N) and oxygen (O) and hydrogen (H); and in the hard mask layer, the total content of Cr and either one of N and O is from 85 to 99.9 at %, and the content of H is from 0.1 to 15 at %.

Abstract: A low-loss optical fiber over wide wavelength range includes a transmission loss of less than or equal to 40 dB/km in a whole wavelength range of 400-1400 nm, and being manufactured by drawing an optical fiber preform including a core composed of a silica glass having a hydroxyl-group concentration of less than or equal to 1 ppm and a cladding composed of a silica glass having a fluorine concentration of more than or equal to 3.2 wt %.

Abstract: An L-amino acid is produced by culturing a microorganism belonging to the family Enterobacteriaceae having an L-amino acid-producing ability and modified so that glycerol dehydrogenase and dihydroxyacetone kinase activities are increased, in a medium containing glycerol as a carbon source to produce and accumulate an L-amino acid in the medium or cells, and collecting the L-amino acid from the medium or the cells.

Abstract: A manufacturing method of a soft magnetic material has a step of preparing a metal magnetic particle containing iron as the main component, and a step of forming an insulating film surrounding the surface of the metal magnetic particle. The step of forming the insulating film includes a step of mixing and stirring the metal magnetic particle, aluminum alkoxide, silicon alkoxide, and phosphoric acid.

Abstract: An L-amino acid is produced by culturing a microorganism belonging to the family Enterobacteriaceae having an L-amino acid-producing ability and modified so that glycerol dehydrogenase and dihydroxyacetone kinase activities are increased, in a medium containing glycerol as a carbon source to produce and accumulate an L-amino acid in the medium or cells, and collecting the L-amino acid from the medium or the cells.

Abstract: To provide an EUV mask blank provided with a low reflective layer, which has excellent properties as an EUV mask blank. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a low reflective layer to an inspection light (wavelength: 190 to 260 nm) for a mask pattern, formed in this order on the substrate, wherein the low reflective layer has a stacked structure having a first layer containing at least 95 at % in total of silicon (Si) and nitrogen (N), and a second layer containing at least 95 at % in total of tantalum (Ta), oxygen (O) and nitrogen (N) or a second layer containing at least 95 at % in total of tantalum (Ta) and nitrogen (N), stacked in this order from the absorber layer side.

Abstract: A soft magnetic material is a soft magnetic material including a composite magnetic particle (30) having a metal magnetic particle (10) mainly composed of Fe and an insulating coating (20) covering metal magnetic particle (10), and insulating coating (20) contains an iron phosphate compound and an aluminum phosphate compound. The atomic ratio of Fe contained in a contact surface of insulating coating (20) in contact with metal magnetic particle (10) is larger than the atomic ratio of Fe contained in the surface of insulating coating (20). The atomic ratio of Al contained in the contact surface of insulating coating (20) in contact with metal magnetic particle (10) is smaller than the atomic ratio of Al contained in the surface of insulating coating (20). Thus, iron loss can be reduced.

Abstract: Colored composite microparticles comprising silica and an organic pigment in which the silica is enclosed in the organic pigment and contained in an amount of 0.001 to 9% by weight (calculated as Si) based on the weight of the composite particles. These microparticles have a high tinting strength and are excellent in dispersibility and light fastness.

Abstract: Provision of a reflective mask blank for EUV lithography having an absorber layer having optical constants suitable for reducing the film thickness. A reflective mask blank for EUV lithography comprising a substrate and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light, that are formed in this order on the substrate; wherein the absorber layer contains at least one element selected from the group consisting of molybdenum (Mo), tin (Sn), silver (Ag), niobium (Nb) and titanium (Ti), and the absorber layer further contains palladium (Pd).

Abstract: A reflective mask blank for EUV lithography having a low-reflective layer which has a low reflectivity with respect to wavelengths of EUV light and a mask pattern inspection light and which satisfies a predetermined reflectivity (405 nm: <40%, 600 to 650 nm: 30 to 50%, 800 to 900 nm: >50%, 1,000 to 1,200 nm: <90%) in a wavelength region (400 to 1,200 nm) required for the mask production process and the pattern transcription process. A reflective mask blank for EUV lithography having a reflective layer for reflecting EUV light, an absorbing layer for absorbing EUV light and a low-reflective layer with respect to a mask pattern inspection light (wavelength: 190 to 260 nm), which are formed in this order on a substrate, wherein the low-reflective layer contains at least tantalum (Ta), oxygen (O) and hydrogen (H), and the low-reflective layer has a Ta+O total content that is between 85 and 99.9 at % and an H content that is between 0.1 and 15 at %.

Abstract: A manufacturing method of a soft magnetic material has a step of preparing a metal magnetic particle containing iron as the main component, and a step of forming an insulating film surrounding the surface of the metal magnetic particle. The step of forming the insulating film includes a step of mixing and stirring the metal magnetic particle, aluminum alkoxide, silicon alkoxide, and phosphoric acid.

Abstract: A silica-based multi core optical fiber and a fabrication method for the same are provided, and include two or more cores of GeO2—SiO2 glass including an fluorine concentration not less than about 15 w % and a germanium concentration about 0.05 wt % to 2 wt %, in a core. A relative refractive index difference of a cladding and a core is not less than about 3%; and a ratio of a cladding diameter to a core diameter is about 1.02 to 3.0. A silica-based single core optical fiber is also provided, and includes a core having a germanium concentration not less than about 15 wt % and an fluorine concentration about 0.05 wt % to 2 wt %.

Abstract: A silica-based multi core optical fiber and a fabrication method for the same are provided, and include two or more cores of GeO2—SiO2 glass including an fluorine concentration not less than about 15 w % and a germanium concentration about 0.05 wt % to 2 wt %, in a core. A relative refractive index difference of a cladding and a core is not less than about 3%; and a ratio of a cladding diameter to a core diameter is about 1.02 to 3.0. A silica-based single core optical fiber is also provided, and includes a core having a germanium concentration not less than about 15 wt % and an fluorine concentration about 0.05 wt % to 2 wt %.