Abstract: According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection electrode and the substrate.

Abstract: According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection electrode and the substrate.

Abstract: According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor.

Abstract: According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection electrode and the substrate.

Abstract: According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection electrode and the substrate.

Abstract: According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection electrode and the substrate.

Abstract: According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection electrode and the substrate.

Abstract: A method of manufacturing a semiconductor device includes forming a first metal film on a first insulating region and a first metal region directly adjacent to the first insulating region, wherein the first metal film comprises a metal other than the metal of the first metal region, forming a second metal film on a second insulating region and a second metal region directly adjacent to the second insulating region, wherein the second metal film comprises a metal other than the metal of the second metal region, bringing the first metal film and the second metal film into contact with each other, and heat treating the first substrate and the second substrate and thereby electrically connecting the first metal region and the second metal region to each other and simultaneously forming an insulating interface film between the first insulating region and the second insulating region.

Abstract: According to an embodiment, a semiconductor device is provided. The semiconductor device includes a through-hole, a copper layer, and a metal portion. The through-hole penetrates a semiconductor substrate between front and rear sides. The copper layer is formed inside the through-hole. The metal portion is made of a metal other than copper, formed closer to a hole core side of the through-hole than the copper layer is, and involves a void therein.

Abstract: A semiconductor memory device includes a first memory cell array layer includes a first memory cell array region, in which memory cells are 3-dimensionally arrayed, and a first and second surface wiring layer connected to the memory cells. A second memory cell array layer includes second memory cell array region, in which memory cells are 3-dimensionally arrayed, and a third and fourth surface wiring layer connected to the second plurality of memory cells. The first memory cell array layer and the second memory cell array layer are bonded to each other such that the second surface wiring layer and the third surface wiring layer face each other and are bonded to each other. The first and second memory cell array regions overlap each other as viewed from a direction orthogonal to a layer plane.

Abstract: A semiconductor memory device includes a first memory cell array layer includes a first memory cell array region, in which memory cells are 3-dimensionally arrayed, and a first and second surface wiring layer connected to the memory cells. A second memory cell array layer includes second memory cell array region, in which memory cells are 3-dimensionally arrayed, and a third and fourth surface wiring layer connected to the second plurality of memory cells. The first memory cell array layer and the second memory cell array layer are bonded to each other such that the second surface wiring layer and the third surface wiring layer face each other and are bonded to each other. The first and second memory cell array regions overlap each other as viewed from a direction orthogonal to a layer plane.

Abstract: According to one embodiment, a method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes three steps of a providing step, a bonding step, and a thinning step. In the providing step, a mitigation layer that mitigates warping of the device substrate being thinned by grinding is provided on the supporting substrate. In the bonding step, the device substrate is bonded to the supporting substrate on which the mitigation layer is provided. In the thinning step, the device substrate supported by the supporting substrate is thinned by grinding.

Abstract: A semiconductor device according to the present embodiment includes a semiconductor substrate, an insulating film and a conductive film. The insulating film is disposed on a first surface of the semiconductor substrate. The insulating film covers a semiconductor element. The conductive film penetrates the semiconductor substrate across from the first surface to a second surface opposite to the first surface. On the second surface, a trench continuously or intermittently exists across from a first end part side of the second surface to a second end part side thereof.

Abstract: A V2X system includes an electrical power distribution system configured to draw electrical power from a grid, support the supply of the drawn electrical power to one or more primary electrical systems and support the exchange of electrical power with a battery bank including at least one rechargeable vehicle battery. A controller manages the exchange of electrical power between the electrical power distribution system and the battery bank by identifying a change rate in electrical power drawn by the electrical power distribution system from the grid, selecting an amount of electrical power for the electrical power distribution system to exchange with the battery bank based on the change rate, and signaling for the exchange of the selected amount of electrical power.

Abstract: A vehicle-to-grid system connected to a power grid includes a first vehicle group of one or more vehicles connected to the power grid, a second vehicle group of one or more vehicles connected to the power grid, and a vehicle-to-grid controller. The vehicle-to-grid controller causes each vehicle from the second vehicle group to supply electrical power to the power grid at a nominal frequency and at an adjusted amplitude, and causes each vehicle from the first vehicle group to supply electrical power to the power grid at an adjusted frequency that is different than the nominal frequency and at a nominal amplitude that is different than the adjusted amplitude.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming an overhanging portion in a perimeter region of a front surface side of a wafer provided with a semiconductor element on the front surface thereof by removing a portion of the wafer in perimeter region of the wafer from the front surface side of the wafer, bonding the front surface of the wafer to a supporting substrate, and thinning the wafer to less than 200 ?m in thickness by grinding the wafer from a rear surface side thereof.

Abstract: According to one embodiment, a method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes three steps of a providing step, a bonding step, and a thinning step. In the providing step, a mitigation layer that mitigates warping of the device substrate being thinned by grinding is provided on the supporting substrate. In the bonding step, the device substrate is bonded to the supporting substrate on which the mitigation layer is provided. In the thinning step, the device substrate supported by the supporting substrate is thinned by grinding.

Abstract: A V2X system includes an electrical power distribution system configured to draw electrical power from a grid, support the supply of the drawn electrical power to one or more primary electrical systems and support the exchange of electrical power with a battery bank including at least one rechargeable vehicle battery. A controller manages the exchange of electrical power between the electrical power distribution system and the battery bank by identifying a change rate in electrical power drawn by the electrical power distribution system from the grid, selecting an amount of electrical power for the electrical power distribution system to exchange with the battery bank based on the change rate, and signaling for the exchange of the selected amount of electrical power.

Abstract: A V2X system includes an electrical power distribution system configured to draw electrical power from a grid, support the supply of the drawn electrical power to one or more primary electrical systems and support the exchange of electrical power with a battery bank including at least one rechargeable vehicle battery. A controller manages the exchange of electrical power between the electrical power distribution system and the battery bank by identifying a change rate in electrical power drawn by the electrical power distribution system from the grid, identifying the battery bank's starting state of charge, selecting an amount of electrical power for the electrical power distribution system to exchange with the battery bank based on the change rate, the battery bank's starting state of charge and a desired ending state of charge for the battery bank, and signaling for the exchange of the selected amount of electrical power.

Abstract: A semiconductor device according to the present embodiment includes a semiconductor substrate, an insulating film and a conductive film. The insulating film is disposed on a first surface of the semiconductor substrate. The insulating film covers a semiconductor element. The conductive film penetrates the semiconductor substrate across from the first surface to a second surface opposite to the first surface. On the second surface, a trench continuously or intermittently exists across from a first end part side of the second surface to a second end part side thereof.