Abstract: A vehicle-to-grid system connected to a power grid includes a first vehicle group of one or more vehicles connected to the power grid, a second vehicle group of one or more vehicles connected to the power grid, and a vehicle-to-grid controller. The vehicle-to-grid controller causes each vehicle from the second vehicle group to supply electrical power to the power grid at a nominal frequency and at an adjusted amplitude, and causes each vehicle from the first vehicle group to supply electrical power to the power grid at an adjusted frequency that is different than the nominal frequency and at a nominal amplitude that is different than the adjusted amplitude.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming an overhanging portion in a perimeter region of a front surface side of a wafer provided with a semiconductor element on the front surface thereof by removing a portion of the wafer in perimeter region of the wafer from the front surface side of the wafer, bonding the front surface of the wafer to a supporting substrate, and thinning the wafer to less than 200 ?m in thickness by grinding the wafer from a rear surface side thereof.

Abstract: According to one embodiment, a method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes three steps of a providing step, a bonding step, and a thinning step. In the providing step, a mitigation layer that mitigates warping of the device substrate being thinned by grinding is provided on the supporting substrate. In the bonding step, the device substrate is bonded to the supporting substrate on which the mitigation layer is provided. In the thinning step, the device substrate supported by the supporting substrate is thinned by grinding.

Abstract: A V2X system includes an electrical power distribution system configured to draw electrical power from a grid, support the supply of the drawn electrical power to one or more primary electrical systems and support the exchange of electrical power with a battery bank including at least one rechargeable vehicle battery. A controller manages the exchange of electrical power between the electrical power distribution system and the battery bank by identifying a change rate in electrical power drawn by the electrical power distribution system from the grid, identifying the battery bank's starting state of charge, selecting an amount of electrical power for the electrical power distribution system to exchange with the battery bank based on the change rate, the battery bank's starting state of charge and a desired ending state of charge for the battery bank, and signaling for the exchange of the selected amount of electrical power.

Abstract: A V2X system includes an electrical power distribution system configured to draw electrical power from a grid, support the supply of the drawn electrical power to one or more primary electrical systems and support the exchange of electrical power with a battery bank including at least one rechargeable vehicle battery. A controller manages the exchange of electrical power between the electrical power distribution system and the battery bank by identifying a change rate in electrical power drawn by the electrical power distribution system from the grid, selecting an amount of electrical power for the electrical power distribution system to exchange with the battery bank based on the change rate, and signaling for the exchange of the selected amount of electrical power.

Abstract: A semiconductor device according to the present embodiment includes a semiconductor substrate, an insulating film and a conductive film. The insulating film is disposed on a first surface of the semiconductor substrate. The insulating film covers a semiconductor element. The conductive film penetrates the semiconductor substrate across from the first surface to a second surface opposite to the first surface. On the second surface, a trench continuously or intermittently exists across from a first end part side of the second surface to a second end part side thereof.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device comprises forming through holes extending through a semiconductor substrate in a thickness direction to integrated circuits in chip areas, and forming a first mark opening and second mark openings in a dicing line. The method detects the first mark opening based on positions of the second mark openings. Then, the method performs alignment of exposure positions based on the position of the first mark opening to perform photolithography, thereby forming a resist pattern on the back side of the semiconductor substrate.

Abstract: A method of charging a battery in a charging system having a power convertor that converts AC electrical power to DC electrical power, the method comprising generating a carrier signal having a carrier frequency that continuously varies between a minimum carrier frequency value and a maximum carrier frequency value, and operating a switching component of the power convertor using the carrier signal.

Abstract: A method of charging a battery in a charging system having a power convertor that coverts AC electrical power to DC electrical power includes operating the power convertor at a first frequency during a first charging phase of the charging system; ending the first charging phase upon determining that a predetermined criterion is satisfied; and subsequent to ending the first charging phase, operating the power convertor at a second frequency during a second charging phase of the charging system, wherein the first frequency is different than the second frequency.

Abstract: A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.

Abstract: A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member.

Abstract: A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.

Abstract: A vehicle-to-grid system connected to a power grid includes a first vehicle group of one or more vehicles connected to the power grid, a second vehicle group of one or more vehicles connected to the power grid, and a vehicle-to-grid controller. The vehicle-to-grid controller causes each vehicle from the second vehicle group to supply electrical power to the power grid at a nominal frequency and at an adjusted amplitude, and causes each vehicle from the first vehicle group to supply electrical power to the power grid at an adjusted frequency that is different than the nominal frequency and at a nominal amplitude that is different than the adjusted amplitude.

Abstract: A method of charging a battery in a charging system having a power convertor that coverts AC electrical power to DC electrical power includes operating the power convertor at a first frequency during a first charging phase of the charging system; ending the first charging phase upon determining that a predetermined criterion is satisfied; and subsequent to ending the first charging phase, operating the power convertor at a second frequency during a second charging phase of the charging system, wherein the first frequency is different than the second frequency.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device comprises forming through holes extending through a semiconductor substrate in a thickness direction to integrated circuits in chip areas, and forming a first mark opening and second mark openings in a dicing line. The method detects the first mark opening based on positions of the second mark openings. Then, the method performs alignment of exposure positions based on the position of the first mark opening to perform photolithography, thereby forming a resist pattern on the back side of the semiconductor substrate.

Abstract: A method of charging a battery in a charging system having a power convertor that converts AC electrical power to DC electrical power, the method comprising generating a carrier signal having a carrier frequency that continuously varies between a minimum carrier frequency value and a maximum carrier frequency value, and operating a switching component of the power convertor using the carrier signal.

Abstract: A vehicle-to-grid system for supplying electrical power to a power grid includes a group of vehicle charging systems and a vehicle-to-grid controller. Each vehicle charging system is associated with a respective vehicle and each vehicle charging system is operable to determine a state of health for a battery of the respective vehicle. The vehicle-to-grid controller is operable to receive state of health information for each respective vehicle from each vehicle charging system of the group of vehicle charging systems describing the state of health for the battery of the respective vehicle, and determine a maximum power supply value for the group of vehicle charging systems based in part on the state of health information for each respective vehicle.

Abstract: According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.

Abstract: According to an embodiment, a semiconductor device is provided. The semiconductor device includes a through-hole, a copper layer, and a metal portion. The through-hole penetrates a semiconductor substrate between front and rear sides. The copper layer is formed inside the through-hole. The metal portion is made of a metal other than copper, formed closer to a hole core side of the through-hole than the copper layer is, and involves a void therein.

Abstract: A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member.