Abstract: A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.

Abstract: A semiconductor device includes first and second semiconductor members and a first barrier film. The first semiconductor member includes a first insulating film, and a first wiring film in the first insulating film, the surface of which is exposed in the first insulating film. The second semiconductor member includes a second insulating film, and a second wiring film in the second insulating film, the surface of which is exposed in the second insulating film. The first barrier film forms a barrier to diffusion of the material of the first wiring film into the second insulating film and is formed of a compound of metal element of the first wiring film and an element of the second insulating film in a region where the first wiring film and the second insulating film are in contact with each other at the junction interface of the first and second semiconductor members.

Abstract: According to one embodiment, a semiconductor device includes an integrated circuit and a conductive material. The integrated circuit is provided on a surface of a semiconductor layer. The conductive material is embedded into a via which penetrates the semiconductor layer in a thickness direction thereof and is electrically connected to the integrated circuit. The conductive material includes a contact portion and a through portion, and the contact portion includes a cross-sectional area that is greater than a cross-sectional area of the through portion.

Abstract: According to one embodiment, a semiconductor chip includes a semiconductor substrate, a via and an insulating layer. The semiconductor substrate has a first major surface and a second major surface on opposite side from the first major surface. The semiconductor substrate is provided with a circuit section including an element and a wiring and a guard ring structure section surrounding the circuit section on the first major surface side. The via is provided in a via hole extending from the first major surface side to the second major surface side of the semiconductor substrate. The insulating layer is provided in a first trench extending from the first major surface side to the second major surface side of the semiconductor substrate.

Abstract: After stacking m wafers in each of which a plurality of semiconductor chips are formed, the m wafers are diced to semiconductor chips to form a first chip stack having m of the semiconductor chips stacked, and, after stacking n wafers, the n wafers are diced to semiconductor chips to form a second chip stack having n of the semiconductor chips stacked. Next, the first chip stack is sorted according to the number of defective semiconductor chips included in the first chip stack, and the second chip stack is sorted according to the number of defective semiconductor chips included in the second chip stack. Furthermore, the first chip stack or the second chip stack after sorting are combined to form a third chip stack.

Abstract: A method for manufacturing a semiconductor device includes: forming a first layer on a substrate; forming a first contact hole in the first layer; burying a sacrificial film in the first contact hole; forming a second layer on the first layer and the first contact hole after burying; forming a second contact hole reaching the sacrificial film in the second layer; removing the sacrificial film from the first contact hole via the second contact hole; and providing a contact electrode in the first contact hole and the second contact hole.

Abstract: A first through hole 16 and a second through hole 17 are formed which penetrate from a rear surface 10a side of an element formation surface 10b of a semiconductor substrate (silicon substrate 10) in which an element section Ra is formed, to the element formation surface. An outer circumference insulation film 12 is formed on the side wall of the bottom of the second through hole 17 to surround the outer circumference of the second through hole 17 having a larger opening diameter among these through holes.

Abstract: A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.

Abstract: According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.

Abstract: A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.

Abstract: A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a connecting member formed above the semiconductor substrate configured to electrically connect upper and lower conductive members; a first insulating film formed in the same layer as the connecting member; a wiring formed on the connecting member, the wiring including a first region and a second region, the first region contacting with a portion of an upper surface of the connecting member, and the second region located on the first region and having a width greater than that of the first region; and a second insulating film formed on the first insulating film so as to contact with at least a portion of the first region of the wiring and with a bottom surface of the second region.

Abstract: A semiconductor device includes a supporting substrate; a semiconductor substrate that includes a first surface in which at least one layer is formed and a second surface that is positioned on an opposite side to the first surface, and is pasted to a surface of the supporting substrate with adhesive such that the first surface faces the supporting substrate side; a protective film that is formed on the second surface of the semiconductor substrate and on a surface of the adhesive extending outwardly from a region between the supporting substrate and the semiconductor substrate, and including a perimeter part that is positioned outside a perimeter part of the adhesive, and positioned inside a perimeter part of the supporting substrate; and an electrode material that is formed so as to be embedded in a penetration hole that penetrates the protective film and the semiconductor substrate.

Abstract: A first region comprises: a semiconductor layer including a columnar portion, a charge storage layer, and a plurality of first conductive layers. The second region comprises: a plurality of second conductive layers formed in the same layer as the plurality of first conductive layers. The plurality of first conductive layers configure a stepped portion at an end vicinity of the first region. The stepped portion is formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The plurality of second conductive layers is formed such that positions of ends thereof at an end vicinity of the second region surrounding the first region are aligned in substantially the perpendicular direction to the substrate.

Abstract: A first through hole 16 and a second through hole 17 are formed which penetrate from a rear surface 10a side of an element formation surface 10b of a semiconductor substrate (silicon substrate 10) in which an element section Ra is formed, to the element formation surface. An outer circumference insulation film 12 is formed on the side wall of the bottom of the second through hole 17 to surround the outer circumference of the second through hole 17 having a larger opening diameter among these through holes.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device including forming a metal film on aback surface of a glass substrate which supports a semiconductor substrate on a front surface thereof; forming a metal oxide film by oxidizing the whole or at least a portion of the metal film from the front surface; forming protective film, such as silicon nitride, on the metal oxide film; holding the front surface of the protective film with an electrostatic chuck; and forming a via for electrical connection in the semiconductor substrate while the front surface of the protective film is in contact with by the electrostatic chuck; then using a laser to delaminate the glass substrate from the semiconductor substrate.

Abstract: A semiconductor device includes a supporting substrate; a semiconductor substrate that includes a first surface in which at least one layer is formed and a second surface that is positioned on an opposite side to the first surface, and is pasted to a surface of the supporting substrate with adhesive such that the first surface faces the supporting substrate side; a protective film that is formed on the second surface of the semiconductor substrate and on a surface of the adhesive extending outwardly from a region between the supporting substrate and the semiconductor substrate, and including a perimeter part that is positioned outside a perimeter part of the adhesive, and positioned inside a perimeter part of the supporting substrate; and an electrode material that is formed so as to be embedded in a penetration hole that penetrates the protective film and the semiconductor substrate.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body, a contact, a semiconductor member, a charge storage layer, and a penetration member. The stacked body includes an electrode film stacked alternately with an insulating film. A configuration of an end portion of the stacked body is a stairstep configuration having a step provided every electrode film. The contact is connected to the electrode film from above the end portion. The semiconductor member is provided in a portion of the stacked body other than the end portion to pierce the stacked body in a stacking direction. The charge storage layer is provided between the electrode film and the semiconductor member. The penetration member pierces the end portion in the stacking direction. The penetration member does not include the same kind of material as the charge storage layer.

Abstract: A memory string is formed to surround the side surface of a columnar portion and a charge storing layer, and includes plural first conductive layers functioning as gates of memory transistors, and a first protecting layer stacked to protect an upper portion of the plural first conductive layers. The plural first conductive layers constitute a first stairway portion formed stepwise such that their ends are located at different positions. Each first conductive layer constitutes a step of the first stairway portion. A top surface of a first portion of the first stairway portion is covered with the first protecting layer including a first number of layers, and A tope surface of a second portion of the first stairway portion located at a lower level than the first portion is covered with the first protecting layer including a second number of layers fewer than the first number of layers.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device including forming a metal film on aback surface of a glass substrate which supports a semiconductor substrate on a front surface thereof; forming a metal oxide film by oxidizing the whole or at least a portion of the metal film from the front surface; forming protective film, such as silicon nitride, on the metal oxide film; holding the front surface of the protective film with an electrostatic chuck; and forming a via for electrical connection in the semiconductor substrate while the front surface of the protective film is in contact with by the electrostatic chuck; then using a laser to delaminate the glass substrate from the semiconductor substrate.

Abstract: According to an embodiment, there are provided a semiconductor chip having a semiconductor element formed thereon, a pad electrode formed on the semiconductor chip and connected to the semiconductor element, a resin layer formed on the semiconductor chip, a foundation insulating layer on which an electronic element and an internal electrode are formed, a hollow body formed on the foundation insulating layer to cover the electronic element and having a top surface side embedded in the resin layer, an opening portion formed on the foundation insulating layer and configured to expose a back surface of the internal electrode, and a conductive layer configured to connect the pad electrode and the internal electrode through the opening portion.