Abstract: A semiconductor device according to an aspect of the present disclosure includes: a plurality of line layers; a first line; and a second line that is not connected to the first line and is redundantly provided to transfer a signal having a level same as a level of a signal transferred through the first line. The first line and the second line are included in different layers out of the plurality of line layers, and a distance between the first line and the second line is longer than an interlayer distance between line layers next to each other out of the plurality of line layers.

Abstract: A semiconductor device includes: a first latch circuit that includes a first inverting circuit, a second inverting circuit, a third inverting circuit, and a fourth inverting circuit; a first first-type well region; a second first-type well region; and a second-type well region. In a plan view, a distance between a drain of a first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the third inverting circuit is longer than a distance between the drain of the first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the fourth inverting circuit.

Abstract: A semiconductor device according to an aspect of the present disclosure includes: a plurality of line layers; a first line; and a second line that is not connected to the first line and is redundantly provided to transfer a signal having a level same as a level of a signal transferred through the first line. The first line and the second line are included in different layers out of the plurality of line layers, and a distance between the first line and the second line is longer than an interlayer distance between line layers next to each other out of the plurality of line layers.

Abstract: A semiconductor device includes: a first latch circuit that includes a first inverting circuit, a second inverting circuit, a third inverting circuit, and a fourth inverting circuit; a first first-type well region; a second first-type well region; and a second-type well region. In a plan view, a distance between a drain of a first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the third inverting circuit is longer than a distance between the drain of the first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the fourth inverting circuit.

Abstract: A semiconductor device includes: a first line; a second line that is not connected to the first line and is provided to transfer a signal having a level same as a level of a signal transferred through the first line; and another line different from the first line and the second line. In a line layer, a distance between the first line and the second line is longer than a distance between the first line and the other line, and is longer than a distance between the second line and the other line.

Abstract: A semiconductor integrated circuit includes a first flip-flop that includes a first slave latch, a second flip-flop that includes a second slave latch, and a clock generation circuit that provides a common clock signal to the first flip-flop and the second flip-flop. The first slave latch includes a first inverter, a first feedback inverter that receives an output signal from the first inverter, and a first switch that is connected between an input terminal of the first inverter and an output terminal of the first feedback inverter. The first flip-flop outputs an output signal from the output terminal of the first feedback inverter.

Abstract: A semiconductor integrated circuit includes a first flip-flop that includes a first slave latch, a second flip-flop that includes a second slave latch, and a clock generation circuit that provides a common clock signal to the first flip-flop and the second flip-flop. The first slave latch includes a first inverter, a first feedback inverter that receives an output signal from the first inverter, and a first switch that is connected between an input terminal of the first inverter and an output terminal of the first feedback inverter. The first flip-flop outputs an output signal from the output terminal of the first feedback inverter.

Abstract: A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.

Abstract: An amorphous carbon film contains carbon as a main component, not more than 30 at. % of hydrogen, not more than 20 at. % of nitrogen and not more than 3 at. % of oxygen (all excluding 0 at. %), and when the total amount of the carbon is taken as 100 at. %, the amount of carbon having an sp2 hybrid orbital is not less than 70 at. % and less than 100 at. %. Nitrogen and oxygen are concentrated on a surface side of the film and when detected from a surface layer by X-ray photoelectron spectroscopy, oxygen content ratio is not less than 4 at. % and not more than 15 at. % and nitrogen content ratio is not less than 10 at. % and not more than 30 at. %.

Abstract: A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.

Abstract: A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.

Abstract: A semiconductor device includes a semiconductor substrate having a predetermined region in which a standard cell is disposed, and also includes: a first circuit connected to a first ground power line; a second circuit that is connected to a second ground power line and formed from the standard cells; and a protection circuit interposed and connected between the first circuit and the second circuit. The protection circuit includes: a resistor connected in series between the first circuit and the second circuit; and a protector that is interposed and connected between a node of the resistor on the second circuit side and the second ground power line and clamps a potential difference between the node and the second ground power line to a predetermined voltage or lower. The protection circuit is formed in a protection cell disposed in the predetermined region.

Abstract: A semiconductor integrated circuit connected between a first node and a second node includes first to fourth transistors. When a signal at the second node changes, the fourth transistor is turned on, and a potential obtained by shifting a third potential by the threshold of the fourth transistor is applied to the gate of the second transistor.

Abstract: A semiconductor integrated circuit connected between a first node and a second node includes first to fourth transistors. When a signal at the second node changes, the fourth transistor is turned on, and a potential obtained by shifting a third potential by the threshold of the fourth transistor is applied to the gate of the second transistor.

Abstract: A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.

Abstract: A semiconductor device includes a semiconductor substrate having a predetermined region in which a standard cell is disposed, and also includes: a first circuit connected to a first ground power line; a second circuit that is connected to a second ground power line and formed from the standard cells; and a protection circuit interposed and connected between the first circuit and the second circuit. The protection circuit includes: a resistor connected in series between the first circuit and the second circuit; and a protector that is interposed and connected between a node of the resistor on the second circuit side and the second ground power line and clamps a potential difference between the node and the second ground power line to a predetermined voltage or lower. The protection circuit is formed in a protection cell disposed in the predetermined region.

Abstract: A semiconductor integrated circuit connected between a first node and a second node includes first to fourth transistors. When a signal at the second node changes, the fourth transistor is turned on, and a potential obtained by shifting a third potential by the threshold of the fourth transistor is applied to the gate of the second transistor.

Abstract: A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.

Abstract: A semiconductor integrated circuit connected between a first node and a second node includes first to fourth transistors. When a signal at the second node changes, the fourth transistor is turned on, and a potential obtained by shifting a third potential by the threshold of the fourth transistor is applied to the gate of the second transistor.

Abstract: A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.