Abstract: A cell includes a plurality of diffusion region pairs, each of the diffusion region pairs being formed by a first impurity diffusion region which is a constituent of a transistor and a second impurity diffusion region such that the first and second impurity diffusion regions are provided side-by-side in a gate length direction with a device isolation region interposed therebetween. In each of the diffusion region pairs, the first and second impurity diffusion regions have an equal length in the gate width direction and are provided at equal positions in the gate width direction, and a first isolation region portion, which is part of the device isolation region between the first and second impurity diffusion regions, has a constant separation length. In the diffusion region pairs, the first isolation region portions have an equal separation length.

Abstract: A layout of a semiconductor device is capable of reliably reducing a variation in gate length due to the optical proximity effect, and enables flexible layout design to be implemented. Gate patterns (G1, G2, G3) of a cell (C1) are arranged at the same pitch, and terminal ends (e1, e2, e3) of the gate patterns are located at the same position in the Y direction, and have the same width in the X direction. A gate pattern (G4) of a cell (C2) has protruding portions (4b) protruding toward the cell (C1) in the Y direction, and the protruding portions (4b) form opposing terminal ends (eo1, eo2, eo3). The opposing terminal ends (eo1, eo2, eo3) are arranged at the same pitch as the gate patterns (G1, G2, G3), are located at the same position in the Y direction, and have the same width in the X direction.

Abstract: A cell includes a plurality of diffusion region pairs, each of the diffusion region pairs being formed by a first impurity diffusion region which is a constituent of a transistor and a second impurity diffusion region such that the first and second impurity diffusion regions are provided side-by-side in a gate length direction with a device isolation region interposed therebetween. In each of the diffusion region pairs, the first and second impurity diffusion regions have an equal length in the gate width direction and are provided at equal positions in the gate width direction, and a first isolation region portion, which is part of the device isolation region between the first and second impurity diffusion regions, has a constant separation length. In the diffusion region pairs, the first isolation region portions have an equal separation length.

Abstract: While securing the building-up ability and crack resistance, to provide a build-up wear-resistant copper alloy and valve seat. The build-up wear-resistant copper alloy and valve seat are characterized by having a composition of nickel: 5.0-24.5%, iron: 3.0-20.0%, silicon: 0.5-5.0%, boron: 0.05-0.5%, chromium: 0.3-5.0%, one member or two members or more selected from the group consisting of molybdenum, tungsten and vanadium: 3.0-20.0%, by weight %, and the balance being copper and inevitable impurities.

Abstract: A semiconductor integrated circuit is provided which entails no increase in the correction time of OPC and in which non-uniformity in the gate lengths due to the optical proximity effects is surely suppressed. A plurality of standard cells (C1, C2, C3, . . . ), each including gates G extended in the vertical direction, are aligned in the transverse direction to form a standard cell row. A plurality of the standard cell rows are located side by side in the vertical direction to form a standard cell group. Each of the standard cell rows has a terminal standard cell Ce at least one end of the standard cell row. The terminal standard cell Ce includes two or more supplementary gates, each of which is any of a dummy gate and a gate of an inactive transistor.

Abstract: An amorphous carbon film includes carbon as a major component, and silicon in an amount of from 0.1 atomic % or more to 10 atomic % or less when the entire amorphous carbon film is taken as 100 atomic %. The carbon is composed of carbon having an sp2 hybrid orbital in an amount of from 60 atomic % or more to 90 atomic % or less when the entire carbon amount is taken as 100 atomic %. Also disclosed is a process for producing the amorphous carbon film.

Abstract: This is to provide a build-up wear-resistant copper-based alloy, which is advantageous for enhancing the cracking resistance and machinability, which is appropriate for cases of building up to form built-up layers especially, and which is equipped with the wear resistance, cracking resistance and machinability combinedly in a well balanced manner. A build-up wear-resistant copper-based alloy is characterized in that it has a composition, which includes nickel: 5.0-20.0%; silicon: 0.5-5.0%; manganese: 3.0-30.0%; and an element, which combines with manganese to form a Laves phase and additionally to form silicide: 3.0-30.0%; by weight %, and inevitable impurities; and additionally the balance being copper. The element can be one member or two or more members of titanium, hafnium, zirconium, vanadium, niobium and tantalum.

Abstract: A friction clutch includes an iron inner clutch plate and two iron outer clutch plates. Each clutch plate has a sliding surface that friction-engages with the other clutch plates. A diamond-like carbon film containing silicon, which functions as a solid lubricant, is formed on the sliding surface of each outer clutch plate through a conventional method such as plasma chemical vapor deposition. The diamond-like carbon film contains 1 wt % to 80 wt % of silicon. A coupling device includes a pilot clutch mechanism that has the friction clutch and an electromagnetic actuator. As a result, the friction clutch has an improved resistance to wear, and the coupling device is durable.

Abstract: An amorphous carbon film forming apparatus according to the present invention is characterized by being provided with a film forming furnace 11; plural workpiece fixtures 23 for supporting plural plate-like workpieces 22 in a state that the same are piled up vertically in parallel with the interval between facing surfaces of two vertically adjoining of the plate-like workpieces 22 being in a range of 2 to 30 millimeters, the plural workpiece fixtures 23 being arranged within the film forming furnace 11 at a regular angular interval on a circle and being connected to a negative electrode; nozzles 31, 32 provided for supplying a processing gas and including at least one nozzle arranged at a center of the circle on which the plural workpiece fixtures 23 are arranged and plural nozzles arranged at a regular angular interval on another circle which surrounds the workpieces fixtures 23 radially outside thereof; and a plasma power supply connected to at least the workpiece fixtures 23.

Abstract: A semiconductor integrated circuit is provided which entails no increase in the correction time of OPC and in which non-uniformity in the gate lengths due to the optical proximity effects is surely suppressed. A plurality of standard cells (C1, C2, C3, . . . ), each including gates G extended in the vertical direction, are aligned in the transverse direction to form a standard cell row. A plurality of the standard cell rows are located side by side in the vertical direction to form a standard cell group. Each of the standard cell rows has a terminal standard cell Ce at least one end of the standard cell row. The terminal standard cell Ce includes two or more supplementary gates, each of which is any of a dummy gate and a gate of an inactive transistor.

Abstract: To provide a sliding member that exhibits excellent durability and is free of lead. A swash plate for a compressor as the sliding member of the invention contains a base material having on the surface thereof a sliding layer constituting at least a sliding surface, on which shoes slide. The sliding layer contains a first layer that contains an amorphous hard carbon (diamond-like carbon) film containing Si (DLC-Si film) and is formed on the base material, and a second layer that is formed on the first layer and contains polyamideimide (PAI) containing a solid lubricant such as MoS2.

Abstract: A drive force transmission device has an outer clutch plate and an inner clutch plate, which are rotatable relative to each other about a common rotational axis. The inner and outer clutch plates become frictionally engaged with each other with lubricant oil provided in between. The outer and inner clutch plates each have a sliding surface. The sliding surfaces face each other. A diamond-like carbon film is formed on the sliding surface of the outer clutch plate. Fine grooves are formed in the sliding surface of the inner clutch plate. The proportion of the sliding area to the sliding surface of the inner clutch plate at the initial stage of use is 55 to 90%.

Abstract: A layout structure of a semiconductor integrated circuit is provided with which narrowing and breaking of metal interconnects near a cell boundary can be prevented without increasing the data amount and processing time for OPC. A cell A and a cell B are adjacent to each other along a cell boundary. The interconnect regions of metal interconnects from which to the cell boundary no other interconnect region exists are placed to be substantially axisymmetric with respect to the cell boundary, while sides of diffusion regions facing the cell boundary are asymmetric with respect to the cell boundary.

Abstract: A cell includes a plurality of diffusion region pairs, each of the diffusion region pairs being formed by a first impurity diffusion region which is a constituent of a transistor and a second impurity diffusion region such that the first and second impurity diffusion regions are provided side-by-side in a gate length direction with a device isolation region interposed therebetween. In each of the diffusion region pairs, the first and second impurity diffusion regions have an equal length in the gate width direction and are provided at equal positions in the gate width direction, and a first isolation region portion, which is part of the device isolation region between the first and second impurity diffusion regions, has a constant separation length. In the diffusion region pairs, the first isolation region portions have an equal separation length.

Abstract: A cell includes a plurality of diffusion region pairs, each of the diffusion region pairs being formed by a first impurity diffusion region which is a constituent of a transistor and a second impurity diffusion region such that the first and second impurity diffusion regions are provided side-by-side in a gate length direction with a device isolation region interposed therebetween. In each of the diffusion region pairs, the first and second impurity diffusion regions have an equal length in the gate width direction and are provided at equal positions in the gate width direction, and a first isolation region portion, which is part of the device isolation region between the first and second impurity diffusion regions, has a constant separation length. In the diffusion region pairs, the first isolation region portions have an equal separation length.

Abstract: The amorphous carbon film of the present invention is an amorphous carbon film comprising carbon and hydrogen, wherein the amorphous carbon film contains not more than 30 atomic % (excluding 0%) of hydrogen and, when the entire amount of the carbon is taken as 100 atomic %, carbon having an sp2 hybrid orbital is present in an amount of not less than 70 atomic % and less than 100 atomic %. Conductivity is imparted to an amorphous carbon film by controlling the contents of hydrogen, Csp3 and the like to increase a structure comprising Csp2. This amorphous carbon film can be formed by plasma CVD using a reaction gas containing one or more gases selected from a carbocyclic compound gas containing carbon having an sp2 hybrid orbital, and a heterocyclic compound gas containing carbon having an sp2 hybrid orbital and silicon and/or nitrogen. By forming the amorphous carbon film on a surface of a substrate, a conductive member can be obtained.

Abstract: Under wet sliding conditions using drivetrain system lubricating oils, a high frictional sliding member exhibiting a high friction coefficient, a favorable ??v characteristic stably, excellent wear resistance, and low mating-member aggressiveness is provided. The present invention is a wet sliding member comprising: a substrate composed of metal, ceramics, or resin; and an amorphous hard carbon film formed integrally on a surface of the substrate, having a surface, at least a part of which is turned into a sliding surface for sliding under wet conditions, and containing at least either one of Si and N in an amount of from 1 to 50 atomic %.

Abstract: This aims to provide a wear-resistant copper-based alloy, which is advantages in not only enhancing wear resistance in a high temperature range but also enhancing crack resistance and machinability and which is especially suitable for forming a cladding layer. The wear-resistant copper-based alloy comprises, by weight, 4.7 to 22.0% nickel, 0.5 to 5.0% silicon, 2.7 to 22.0% iron, 1.0 to 15.0% chromium, 0.01 to 2.00% cobalt, 2.7 to 22.0% one or more of tantalum, titanium, zirconium and hafnium, and the balance of copper with inevitable impurities.

Abstract: A rectangular opening is formed in a power supply line which is shared between cell rows. A connection to a substrate potential supply line is ensured in the rectangular opening. Specifically, a semiconductor device includes a plurality of cell rows each including a plurality of standard cells arranged therein, a first power supply line for supplying a first potential to each of the standard cells, and a second power supply line for supplying a second potential to each of the standard cells, the second power supply line being electrically separated from the first power supply line. At least two standard cells share the first power supply line through a first interconnect provided in an interconnect layer and share the second power supply line through a second interconnect provided in the interconnect layer.

Abstract: An amorphous carbon film forming apparatus according to the present invention is characterized by being provided with a film forming furnace 11; plural workpiece fixtures 23 for supporting plural plate-like workpieces 22 in a state that the same are piled up vertically in parallel with the interval between facing surfaces of two vertically adjoining of the plate-like workpieces 22 being in a range of 2 to 30 millimeters, the plural workpiece fixtures 23 being arranged within the film forming furnace 11 at a regular angular interval on a circle and being connected to a negative electrode; nozzles 31, 32 provided for supplying a processing gas and including at least one nozzle arranged at a center of the circle on which the plural workpiece fixtures 23 are arranged and plural nozzles arranged at a regular angular interval on another circle which surrounds the workpieces fixtures 23 radially outside thereof; and a plasma power supply connected to at least the workpiece fixtures 23.