Abstract: To provide a soft amorphous carbon exhibiting a low elastic modulus, an amorphous-carbon coated member provided with a coated film comprising the amorphous carbon, and a process for forming an amorphous carbon film. The amorphous carbon comprises carbon as a major component and hydrogen in an amount of from more than 30 atomic % to 60 atomic % or less, and exhibits an elastic modulus of from 40 or more to 150 GPa or less. Moreover, the amorphous-carbon coated member comprises a conductive substrate, and a coated film fixed on at least a part of a surface of the substrate and composed of the amorphous carbon. In addition, in a process for forming the amorphous-carbon coated film, an amorphous carbon film is formed on a surface of conductive substrates by a plasma CVD method.

Abstract: An amorphous-carbon coated member includes a conductive substrate, and an amorphous carbon film. The amorphous carbon film is fixed onto a part of a surface of the substrate at least, and includes a compositionally gradient film. The compositionally gradient film has an outer side and a substrate side, and is composed of carbon, silicon and hydrogen. The silicon concentration inclines continuously from the lowest to the highest in the direction away from the outer side to the substrate side. The hydrogen concentration inclines continuously from the highest to the lowest in the direction away from the outer side to the substrate side. The amorphous-carbon coated member exhibits not only good wear resistance but also low aggressiveness against mating member simultaneously.

Abstract: A semiconductor integrated circuit is provided which entails no increase in the correction time of OPC and in which non-uniformity in the gate lengths due to the optical proximity effects is surely suppressed. A plurality of standard cells (C1, C2, C3, . . . ), each including gates G extended in the vertical direction, are aligned in the transverse direction to form a standard cell row. A plurality of the standard cell rows are located side by side in the vertical direction to form a standard cell group. Each of the standard cell rows has a terminal standard cell Ce at least one end of the standard cell row. The terminal standard cell Ce includes two or more supplementary gates, each of which is any of a dummy gate and a gate of an inactive transistor.

Abstract: To provide a sliding member that exhibits excellent durability and is free of lead. A swash plate for a compressor as the sliding member of the invention contains a base material having on the surface thereof a sliding layer constituting at least a sliding surface, on which shoes slide. The sliding layer contains a first layer that contains an amorphous hard carbon (diamond-like carbon) film containing Si (DLC-Si film) and is formed on the base material, and a second layer that is formed on the first layer and contains polyamideimide (PAI) containing a solid lubricant such as MoS2.

Abstract: An amorphous carbon film includes carbon as a major component, and silicon in an amount of from 0.1 atomic % or more to 10 atomic % or less when the entire amorphous carbon film is taken as 100 atomic %. The carbon is composed of carbon having an sp2 hybrid orbital in an amount of from 60 atomic % or more to 90 atomic % or less when the entire carbon amount is taken as 100 atomic %. Also disclosed is a process for producing the amorphous carbon film.

Abstract: A sliding member includes a superficial portion forming a sliding surface. The superficial portion includes an oxygen-containing alloy containing at least one metallic element selected from the group consisting of molybdenum and tungsten in an amount of from 2 to 80% by weight; and oxygen in an amount of from 0.5 to 15% by weight. The sliding member sustains lubricating characteristics given to the sliding surface over a long period of time to maintain a low friction coefficient and durability.

Abstract: A semiconductor element heat dissipating member is provided which has excellent heat dissipation characteristics and adhesion characteristics and enables production of a semiconductor device at a low cost. A semiconductor device using the same, and a method of producing the same are also provided. The semiconductor element heat dissipating member has a conductive substrate and an electrically insulating amorphous carbon film containing hydrogen, and the electrically insulating amorphous carbon film is formed at least on a region of the conductive substrate on which region a semiconductor element is to be mounted.

Abstract: A cell includes a plurality of diffusion region pairs, each of the diffusion region pairs being formed by a first impurity diffusion region which is a constituent of a transistor and a second impurity diffusion region such that the first and second impurity diffusion regions are provided side-by-side in a gate length direction with a device isolation region interposed therebetween. In each of the diffusion region pairs, the first and second impurity diffusion regions have an equal length in the gate width direction and are provided at equal positions in the gate width direction, and a first isolation region portion, which is part of the device isolation region between the first and second impurity diffusion regions, has a constant separation length. In the diffusion region pairs, the first isolation region portions have an equal separation length.

Abstract: This aims to provide a wear-resistant copper-based alloy, which is advantages in not only enhancing wear resistance in a high temperature range but also enhancing crack resistance and machinability and which is especially suitable for forming a cladding layer. The wear-resistant copper-based alloy comprises, by weight, 4.7 to 22.0% nickel, 0.5 to 5.0% silicon, 2.7 to 22.0% iron, 1.0 to 15.0% chromium, 0.01 to 2.00% cobalt, 2.7 to 22.0% one or more of tantalum, titanium, zirconium and hafnium, and the balance of copper with inevitable impurities.

Abstract: A drive force transmission device has an outer clutch plate and an inner clutch plate, which are rotatable relative to each other about a common rotational axis. The inner and outer clutch plates become frictionally engaged with each other with lubricant oil provided in between. The outer and inner clutch plates each have a sliding surface. The sliding surfaces face each other. A diamond-like carbon film is formed on the sliding surface of the outer clutch plate. Fine grooves are formed in the sliding surface of the inner clutch plate. The proportion of the sliding area to the sliding surface of the inner clutch plate at the initial stage of use is 55 to 90%.

Abstract: This is to provide a build-up wear-resistant copper-based alloy, which is advantageous for enhancing the cracking resistance and machinability, which is appropriate for cases of building up to form built-up layers especially, and which is equipped with the wear resistance, cracking resistance and machinability combinedly in a well balanced manner. A build-up wear-resistant copper-based alloy is characterized in that it has a composition, which includes nickel: 5.0-20.0%; silicon: 0.5-5.0%; manganese: 3.0-30.0%; and an element, which combines with manganese to form a Laves phase and additionally to form silicide: 3.0-30.0%; by weight %, and inevitable impurities; and additionally the balance being copper. The element can be one member or two or more members of titanium, hafnium, zirconium, vanadium, niobium and tantalum.

Abstract: In a level shifter, in the case where the amplitude voltage of an input signal (i.e., a first power voltage VDDL) input to an input terminal is changed to be higher and the amplitude voltage of an output signal (i.e., a second power voltage VDDH) output from an output terminal is changed to be lower, a fall delay time of the signal output from the output terminal tends to be longer than a rise delay time of the signal. However, an inverted input signal obtained by an inverter is input to a level shifting unit and also to the gate of an N-type transistor, and therefore, the N-type transistor is turned on at the fall of the input signal input to the input terminal, so as to supply a current based on the second power voltage VDDH to an output node of the level shifting unit for assisting the shift into H level performed in the level shifting unit.

Abstract: An amorphous-carbon coated member includes a conductive substrate, and an amorphous carbon film. The amorphous carbon film is fixed onto a part of a surface of the substrate at least, and includes a compositionally gradient film. The compositionally gradient film has an outer side and a substrate side, and is composed of carbon, silicon and hydrogen. The silicon concentration inclines continuously from the lowest to the highest in the direction away from the outer side to the substrate side. The hydrogen concentration inclines continuously from the highest to the lowest in the direction away from the outer side to the substrate side. The amorphous-carbon coated member exhibits not only good wear resistance but also low aggressiveness against mating member simultaneously.

Abstract: A rectangular opening is formed in a power supply line which is shared between cell rows. A connection to a substrate potential supply line is ensured in the rectangular opening.

Abstract: While securing the building-up ability and crack resistance, to provide a build-up wear-resistant copper alloy and valve seat. The build-up wear-resistant copper alloy and valve seat are characterized by having a composition of nickel: 5.0-24.5%, iron: 3.0-20.0%, silicon: 0.5-5.0%, boron: 0.05-0.5%, chromium: 0.3-5.0%, one member or two members or more selected from the group consisting of molybdenum, tungsten and vanadium: 3.0-20.0%, by weight %, and the balance being copper and inevitable impurities.

Abstract: A semiconductor element heat dissipating member is provided which has excellent heat dissipation characteristics and adhesion characteristics and enables production of a semiconductor device at a low cost. A semiconductor device using the same, and a method of producing the same are also provided. The semiconductor element heat dissipating member has a conductive substrate and an electrically insulating amorphous carbon film containing hydrogen, and the electrically insulating amorphous carbon film is formed at least on a region of the conductive substrate on which region a semiconductor element is to be mounted.

Abstract: In a level shifter, in the case where the amplitude voltage of an input signal (i.e., a first power voltage VDDL) input to an input terminal is changed to be higher and the amplitude voltage of an output signal (i.e., a second power voltage VDDH) output from an output terminal is changed to be lower, a fall delay time of the signal output from the output terminal tends to be longer than a rise delay time of the signal. However, an inverted input signal obtained by an inverter is input to a level shifting unit and also to the gate of an N-type transistor, and therefore, the N-type transistor is turned on at the fall of the input signal input to the input terminal, so as to supply a current based on the second power voltage VDDH to an output node of the level shifting unit for assisting the shift into H level performed in the level shifting unit.

Abstract: To provide a soft amorphous carbon exhibiting a low elastic modulus, an amorphous-carbon coated member provided with a coated film comprising the amorphous carbon, and a process for forming an amorphous carbon film. The amorphous carbon comprises carbon as a major component and hydrogen in an amount of from more than 30 atomic % to 60 atomic % or less, and exhibits an elastic modulus of from 40 or more to 150 GPa or less. Moreover, the amorphous-carbon coated member comprises a conductive substrate, and a coated film fixed on at least a part of a surface of the substrate and composed of the amorphous carbon. In addition, in a process for forming the amorphous-carbon coated film, an amorphous carbon film is formed on a surface of conductive substrates by a plasma CVD method.

Abstract: In a flip-flop circuit which includes an input section using a dynamic circuit and an output section using a static circuit and which captures data during a period of a pulse width shorter than a clock cycle, the number of transistors, circuit area and power consumption are reduced. In FIG. 1, an output signal of an inverter circuit INV1 constituting a latch circuit 2 connected to the output terminal of an input section 1 is used as an input signal of a control section 3. Thus, a control signal output from the control section 3 to the input section 1 is stabilized, thereby suppressing unnecessary operation of circuit elements and reducing unnecessary power consumption. In addition, the configuration of the control section 3 is simplified. As a result, the number of transistors constituting the circuit and the circuit area can be reduced.

Abstract: Under wet sliding conditions using drivetrain system lubricating oils, a high frictional sliding member exhibiting a high friction coefficient, a favorable &mgr;-v characteristic stably, excellent wear resistance, and low mating-member aggressiveness is provided. The present invention is a wet sliding member comprising: a substrate composed of metal, ceramics, or resin; and an amorphous hard carbon film formed integrally on a surface of the substrate, having a surface, at least a part of which is turned into a sliding surface for sliding under wet conditions, and containing at least either one of Si and N in an amount of from 1 to 50 atomic %.