Patents by Inventor Keiji Ikeda
Keiji Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050059197Abstract: In a nitride-system semiconductor, being different from GaAs and Si, Schottky barrier heights ?B change significantly against work functions ?M of metals. Then, for example, on an HEMT in which a buffer layer and a barrier layer constituted by nitride-system semiconductors are sequentially formed on a substrate, and a gate electrode is formed on the barrier layer, when a metal having a relatively large work function ?M is selected as a metal constituting the gate electrode, and the thickness of the barrier layer is adjusted so that the Schottky barrier height ?B becomes larger as compared to a semiconductor surface potential ?S on both sides of the gate electrode, a two-dimensional electron gas cannot exist below the gate electrode even when no recess is formed on a portion immediately beneath the gate electrode on the barrier layer, so that the enhancement operation becomes possible.Type: ApplicationFiled: June 21, 2004Publication date: March 17, 2005Applicant: FUJITSU LIMITEDInventors: Yoshimi Yamashita, Akira Endoh, Keiji Ikeda
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Patent number: 6855987Abstract: The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode.Type: GrantFiled: March 7, 2003Date of Patent: February 15, 2005Assignee: Fujitsu LimitedInventors: Takashi Mimura, Keiji Ikeda
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Patent number: 6853275Abstract: The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contracts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.Type: GrantFiled: September 24, 2002Date of Patent: February 8, 2005Assignee: Fujitsu Takamisawa Component Ltd.Inventors: Shinichi Sato, Yoshio Okamoto, Shigemitsu Aoki, Keiji Ikeda, Masato Morimuta
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Patent number: 6831533Abstract: The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contracts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.Type: GrantFiled: September 24, 2002Date of Patent: December 14, 2004Assignee: Fujitsu Takamisawa Component Ltd.Inventors: Shinichi Sato, Yoshio Okamoto, Shigemitsu Aoki, Keiji Ikeda, Masato Morimuta
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Patent number: 6803613Abstract: In a semiconductor heterojunction corresponding to the n-channel and p-channel, the present invention is to enable the selective carrier injection into each channel by employing a height difference of a Schottky barrier, &phgr; B, which is provided between a source/drain consisting of metal or semiconductor-intermetallic compound and a semiconductor film used for each channel of the semiconductor.Type: GrantFiled: March 14, 2002Date of Patent: October 12, 2004Assignee: Fujitsu LimitedInventors: Keiji Ikeda, Takashi Mimura
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Publication number: 20040151684Abstract: The object of the present invention is to provide a face wash which effectively removes pore stains and aged horny layers of the skin and gives whitening effect but has lesser stimulant feel. The present invention solves the object by providing a face wash comprising a protein-degrading enzyme, lipid-degrading enzyme, trehalose, D-glucose, and ascorbic acid and/or a derivative thereof as effective ingredients.Type: ApplicationFiled: November 7, 2003Publication date: August 5, 2004Inventors: Noriko Mori, Naoto Ogimoto, Shukuko Kajinami, Shoichi Hamada, Keiji Ikeda
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Patent number: 6756868Abstract: The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contracts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.Type: GrantFiled: September 24, 2002Date of Patent: June 29, 2004Assignee: Fujitsu Takamisawa Component LimitedInventors: Shinichi Sato, Yoshio Okamoto, Shigemitsu Aoki, Keiji Ikeda, Masato Morimuta
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Patent number: 6699921Abstract: There is provided a rubber composition whose run-flat durability is improved and in which precipitation of sulfur and a vulcanization accelerator on the rubber surface before vulcanization is prevented. Sulfur in an amount of 2 to 8 parts by weight and two or more vulcanization accelerators in a total amount of at least 5 parts by weight based on 100 parts by weight of a rubber component are used, at least one of the accelerators being a sulfen amide accelerator.Type: GrantFiled: November 20, 2001Date of Patent: March 2, 2004Assignee: Sumitomo Rubber Industries, Ltd.Inventor: Keiji Ikeda
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Publication number: 20030209715Abstract: A first film of rare-earth metal is formed on a semiconductor region of compound semiconductor exposed on a substrate. A second film essentially comprising silicon is formed on the surface of the first film. The first and second films are heated to silicidate at least a portion of the first film in contact with the second film. It is possible to lower the contact resistance of an ohmic electrode formed on semiconductor having a wide band gap.Type: ApplicationFiled: May 6, 2003Publication date: November 13, 2003Applicant: FUJITSU LIMITEDInventors: Keiji Ikeda, Yoshimi Yamashita
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Publication number: 20030168700Abstract: The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode. The surface scattering of the carriers and phonon scattering can be prevented while suppressing the short channel effect. Resultantly the semiconductor device can have high mobility and high speed.Type: ApplicationFiled: March 7, 2003Publication date: September 11, 2003Applicant: FUJITSU LIMITEDInventors: Takashi Mimura, Keiji Ikeda
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Publication number: 20030067021Abstract: In a semiconductor heterojunction corresponding to the n-channel and p-channel, the present invention is to enable the selective carrier injection into each channel by employing a height difference of a Schottky barrier, &phgr; B, which is provided between a source/drain consisting of metal or semiconductor-intermetallic compound and a semiconductor film used for each channel of the semiconductor.Type: ApplicationFiled: March 14, 2002Publication date: April 10, 2003Applicant: FUJITSU LIMITEDInventors: Keiji Ikeda, Takashi Mimura
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Publication number: 20030020573Abstract: The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contracts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.Type: ApplicationFiled: September 24, 2002Publication date: January 30, 2003Applicant: FUJITSU TAKAMISAWA COMPONENT LIMITEDInventors: Shinichi Sato, Yoshio Okamoto, Shigemitsu Aoki, Keiji Ikeda, Masato Morimuta
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Publication number: 20030020572Abstract: The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contracts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.Type: ApplicationFiled: September 24, 2002Publication date: January 30, 2003Applicant: FUJITSU TAKAMISAWA COMPONENT LIMITEDInventors: Shinichi Sato, Yoshio Okamoto, Shigemitsu Aoki, Keiji Ikeda, Masato Morimuta
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Publication number: 20030020574Abstract: The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contracts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.Type: ApplicationFiled: September 24, 2002Publication date: January 30, 2003Applicant: FUJITSU TAKAMISAWA COMPONENT LIMITEDInventors: Shinichi Sato, Yoshio Okamoto, Shigemitsu Aoki, Keiji Ikeda, Masato Morimuta
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Patent number: 6489868Abstract: The present invention provides an electromagnetic relay that has a long service life, even when being used for interrupting high voltage, and that can be miniaturized. In this electromagnetic relay, the circuit interruption is cut-off by two or more keying circuits, which are operated by a single coil and connected in series. Thus, an amount of generated arc per keying circuit is suppressed. Consequently, the service life of the electromagnetic relay is lengthened. Moreover, the space between the contacts thereof is reduced, so that the electromagnetic relay is miniaturized. Additionally, a magnetic field for extinguishing arc is formed by a back or counter electromotive force generated when the circuit is cut-off. Thus, the generated arc is extinguished.Type: GrantFiled: February 28, 2000Date of Patent: December 3, 2002Assignee: Fujitsu Takamisawa Component LimitedInventors: Shinichi Sato, Yoshio Okamoto, Shigemitsu Aoki, Keiji Ikeda, Masato Morimuta
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Publication number: 20020091184Abstract: There is provided a rubber composition whose run-flat durability is improved and in which precipitation of sulfur and a vulcanization accelerator on the rubber surface before vulcanization is prevented. Sulfur in an amount of 2 to 8 parts by weight and two or more vulcanization accelerators in an amount of at least 5 parts by weight based on 100 parts by weight of a rubber component are used, at least one of the accelerators being a sulfen amide accelerator.Type: ApplicationFiled: November 20, 2001Publication date: July 11, 2002Inventor: Keiji Ikeda
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Patent number: 5752600Abstract: A package for shipping and permitting display of an article, such as a wristwatch, is provided. The package is constructed with a box without a bottom and having a cutout on one side and a sleeve to display price or other indicia on two different places on a display for the watch stored within the box. A C-shaped cuff member is provided having a stopper for holding a watch thereon without it sliding during transportation. The C-shaped cuff member is also designed for holding watches having bands of different lengths.Type: GrantFiled: May 13, 1996Date of Patent: May 19, 1998Assignee: Seiko Kabushiki Kaisha Hattori SeikoInventors: Shigeho Kurashina, Keiji Ikeda