Abstract: An information processing system and method is disclosed that can automatically establish a software environment suitable for a hardware configuration without the operator's intervention even if the hardware configuration for the information processing system changes. This is accomplished by establishing a file of system configurations describing the data for any previously established software system environment. The file is stored in the information processing system and is changed based on any hardware changes so that the software system configuration can also change.

Abstract: A titanium layer is formed by depositing titanium over entire surface of a gate electrode, a P-type silicon substrate, an insulation layer, an oxide layer and so forth. By effecting first RTA (Rapid Thermal Annealing) under nitrogen atmosphere, titanium silicide layer of C49 type structure is formed. At this time, the regions of the titanium layer which are on the oxide layer and the insulation layer and upper part of the region of the titanium layer which is formed on the silicon substrate are reacted with N.sub.2 gas to produce titanium nitride layer. In conjunction therewith, titanium layer on the surface of the insulation layer and the oxide layer is slightly reacted to form titanium silicide thin film. Subsequently, only titanium nitride is selectively removed. Thereafter, under oxygen atmosphere, second RTA is performed at 850.degree. C. for 10 sec. to oxidize the titanium silicide thin film to make it insulative.

Abstract: The method of fabricating a semiconductor device, includes the steps of (a) forming gate oxides on regions separated by device isolation regions, (b) depositing an amorphous silicon or a polysilicon film, (c) depositing a removable space-forming film over the silicon film, (d) patterning the space-forming film and the silicon film into the same shape to form a gate electrode comprising the thus patterned space-forming film and silicon film, (e) depositing a silicon nitride film, (f) etching the silicon nitride film to form a first sidewall around a sidewall of the gate electrode, (g) depositing a silicon oxide film, (h) etching the silicon oxide film to form a second sidewall around and onto the first sidewall, (i) etching the space-forming film with hydrofluoric anhydride for removal so that the silicon film is exposed and the first sidewall remains unremoved, (j) forming source/drain regions, and (k) selectively depositing a refractory metal or metal silicide film on the silicon film and the source/drain re

Abstract: A computer unit and multiple I/O adapter units are interconnectable in a variety of different plug attachment configurations which may be frequently altered in normal use of the system. An arrangement is provided for automatically initializing adapter units which are currently connected to the computer unit to operating states uniquely suited to the current configuration of connections. In the arrangement, non-volatile storage means retentively stores multiple sets of configuration state information, each set corresponding to a different configuration of connections between the adapter units and the computer unit. Means operating during each initialization of the system detects identities (ID's) of adapter units currently connected to the computer unit, and compares them to ID's associatively stored with the configuration state information.