Abstract: A pixel drive circuit including a plurality of pixel circuits, each including a photoelectric converting unit for converting an incident light into an electric charge and accumulating the converted electric charge, the plurality of pixel circuits being arranged in a matrix shape, an address decoder for selecting the pixel circuits to be controlled which are arranged on an identical line, a storage circuit for storing operation information to be executed by the pixel circuits selected by the address decoder, and a control circuit for controlling an operation of the pixel circuits selected by the address decoder in accordance with a storage state of the storage circuit. The control circuit controls a charge discharging operation of discharging an electric charge remaining in the photoelectric converting unit of each of the pixel circuits. The storage circuit holds the storage state until the charge discharging operation is completed.

Abstract: A solid-state image sensor includes a pixel array unit including a plurality of pixels arranged in the form of an array, column signal lines adapted to transmit pixel signals output from pixels in respective columns, a noise adding unit adapted to add temporally constant and two-dimensional spatially random noise to the pixel signals transmitted via the column signal lines, and an analog-to-digital converter adapted to convert a signal level and a reference level of each pixel signal including the noise added thereto by the noise adding unit.

Abstract: An NchMOS transistor Q71 on the input side of a current mirror 70 is made function as a voltage operating-point setting portion so that a pixel signal line potential (voltage of a horizontal signal line 20) would be constantly stable nearly at the GND. Then, an amplification factor and linearity become good in an amplification transistor in the solid imaging device 3. A current copier 90 is made function as a current sampling portion so as to receive a signal current IIN of the solid imaging device 3 through the current mirror 70 to carry out sampling of a pixel signal in a resetting period in the shape of current component as the pixel signal is. Calculating differential between a current component in a detecting period and an offset current, which is the current component in a resetting period in sampling, allows an offset component included in the pixel signal to be removed and only pure signal Isig to be picked up at an output terminal Iout, so that the FPN restraining function can be fulfilled.

Abstract: A solid-state image sensor includes a pixel array unit including a plurality of pixels arranged in the form of an array, column signal lines adapted to transmit pixel signals output from pixels in respective columns, a noise adding unit adapted to add temporally constant and two-dimensional spatially random noise to the pixel signals transmitted via the column signal lines, and an analog-to-digital converter adapted to convert a signal level and a reference level of each pixel signal including the noise added thereto by the noise adding unit.

Abstract: A pixel drive circuit includes a plurality of pixel circuits each including a photoelectric converting unit for converting an incident light into an electric charge and accumulating the converted electric charge, the plurality of pixel circuits being arranged in a matrix shape, an address decoder for selecting the pixel circuits to be controlled which are arranged on an identical line, a storage circuit for storing operation information to be executed by the pixel circuits selected by the address decoder, and a control circuit for controlling an operation of the pixel circuits selected by the address decoder in accordance with a storage state of the storage circuit. The control circuit controls a charge discharging operation of discharging an electric charge remaining in the photoelectric converting unit of each of the pixel circuits. The storage circuit holds the storage state until the charge discharging operation is completed.

Abstract: A pixel drive circuit includes a plurality of pixel circuits each including a photoelectric converting unit for converting an incident light into an electric charge and accumulating the converted electric charge, the plurality of pixel circuits being arranged in a matrix shape, an address decoder for selecting the pixel circuits to be controlled which are arranged on an identical line, a storage circuit for storing operation information to be executed by the pixel circuits selected by the address decoder, and a control circuit for controlling an operation of the pixel circuits selected by the address decoder in accordance with a storage state of the storage circuit. The control circuit controls a charge discharging operation of discharging an electric charge remaining in the photoelectric converting unit of each of the pixel circuits. The storage circuit holds the storage state until the charge discharging operation is completed.

Abstract: Disclosed herein is a solid-state imaging device including: a plurality of pixel circuits each of which converts an optical signal into a pixel signal; a load current source circuit adapted to supply a load current, used to read out the pixel signal from the plurality of pixel circuits, to the pixel circuits on a column-by-column basis; a signal readout circuit adapted to read out a reference signal and the pixel signal from the pixel circuits on a row-by-row basis and output the difference between the reference and pixel signals that have been read out; and a control signal generation circuit adapted to generate a maintenance control signal used to maintain the load current constant during a readout period that lasts from when the reference signal is read out by the signal readout circuit to when the pixel signal is read out by the signal readout circuit.

Abstract: An imaging device includes: a pixel section having a plurality of pixel circuits arranged in a matrix form; and a signal processing section that processes an output signal read from the pixel section. The pixel section includes a first output signal line, at least one first color pixel circuit connected to the first output signal line, a second output signal line, and at least one second color pixel circuit adjacent to the first color pixel circuit in a row direction thereof and connected to the second output signal line. The signal processing section includes a first signal processing circuit, a second signal processing circuit, a selection circuit, a first current source, a second current source, a current source selection circuit, a first connection node, and a second connection node.

Abstract: A solid-state imaging apparatus includes a comparator for comparing a pixel signal obtained by a pixel section and a reference signal the value of which varies in a stepwise manner, an analog-digital converter for outputting, as a digital value, the amount of time when the pixel signal and the reference signal change levels by the comparator; a reset signal generator for generating a reset signal that triggers a reset operation to be input to the comparator in order to adjust the reference in the analog-digital converter, and a waveform processor provided between the reset signal generator and the comparator for increasing the degree of dullness of a waveform of the reset signal.

Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.

Abstract: A solid-state imaging apparatus includes comparing means for comparing a pixel signal obtained by a pixel section and a reference signal the value of which varies in a stepwise manner, analog-digital converting means for outputting, as a digital value, the amount of time when the pixel signal and the reference signal change levels by the comparing means, reset signal generating means for generating a reset signal that triggers a reset operation to be input to the comparing means in order to adjust the reference in the analog-digital converting means, and waveform processing means provided between the reset signal generating means and the comparing means for increasing the degree of dullness of a waveform of the reset signal.

Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.

Abstract: A pixel drive circuit includes a plurality of pixel circuits each including a photoelectric converting unit for converting an incident light into an electric charge and accumulating the converted electric charge, the plurality of pixel circuits being arranged in a matrix shape, an address decoder for selecting the pixel circuits to be controlled which are arranged on an identical line, a storage circuit for storing operation information to be executed by the pixel circuits selected by the address decoder, and a control circuit for controlling an operation of the pixel circuits selected by the address decoder in accordance with a storage state of the storage circuit. The control circuit controls a charge discharging operation of discharging an electric charge remaining in the photoelectric converting unit of each of the pixel circuits. The storage circuit holds the storage state until the charge discharging operation is completed.

Abstract: A solid-state imaging device including: a pixel section formed by a matrix-like array of a plurality of pixels performing photoelectric conversion; and a pixel signal readout section reading out a pixel signal from the pixel section in units for reading each formed by a plurality of pixels, wherein the pixel signal readout section includes a column-parallel type ADC group formed by a plurality of analog-digital converters (ADCs) for performing A-D conversion of a pixel reset level, and a signal processing system, the signal processing system obtaining only an average value of results of A-D conversion of pixel reset levels for a plurality of pixels and automatically adjusting an input offset value for the conversion range of the ADCs such that the average value of pixel reset levels will be adequately positioned with respect to the A-D conversion range.

Abstract: A pixel drive circuit including a plurality of pixel circuits, each including a photoelectric converting unit for converting an incident light into an electric charge and accumulating the converted electric charge, the plurality of pixel circuits being arranged in a matrix shape, an address decoder for selecting the pixel circuits to be controlled which are arranged on an identical line, a storage circuit for storing operation information to be executed by the pixel circuits selected by the address decoder, and a control circuit for controlling an operation of the pixel circuits selected by the address decoder in accordance with a storage state of the storage circuit. The control circuit controls a charge discharging operation of discharging an electric charge remaining in the photoelectric converting unit of each of the pixel circuits. The storage circuit holds the storage state until the charge discharging operation is completed.

Abstract: From a pixel array where imaging pixels are arranged, pixel signals of respective columns on a selected row are read in parallel in a horizontal blanking period of a horizontal period. The pixel signals of the respective columns are output to horizontal signal lines in an effective period of the horizontal period via charge integrating amps provided respectively for the columns, i.e., provided respectively for vertical signal lines, and are thereby transferred horizontally. In the charge integrating amps, it is possible to enter a standby state while holding the pixel signals by a holding voltage. Furthermore, in the charge integrating amps, a reference potential for precharging feedback capacitors for amps at the time of a reading operation is automatically controlled based on a black level. Furthermore, pixel signals from the respective charge integrating amps are horizontally transferred in parallel using a plurality of horizontal signal lines.

Abstract: An NchMOS transistor Q71 on the input side of a current mirror 70 is made function as a voltage operating-point setting portion so that a pixel signal line potential (voltage of a horizontal signal line 20) would be constantly stable nearly at the GND. Then, an amplification factor and linearity become good in an amplification transistor in the solid imaging device 3. A current copier 90 is made function as a current sampling portion so as to receive a signal current IIN of the solid imaging device 3 through the current mirror 70 to carry out sampling of a pixel signal in a resetting period in the shape of current component as the pixel signal is. Calculating differential between a current component in a detecting period and an offset current, which is the current component in a resetting period in sampling, allows an offset component included in the pixel signal to be removed and only pure signal Isig to be picked up at an output terminal Iout, so that the FPN restraining function can be fulfilled.

Abstract: A solid-state image sensor includes a pixel array unit including a plurality of pixels arranged in the form of an array, column signal lines adapted to transmit pixel signals output from pixels in respective columns, a noise adding unit adapted to add temporally constant and two-dimensional spatially random noise to the pixel signals transmitted via the column signal lines, and an analog-to-digital converter adapted to convert a signal level and a reference level of each pixel signal including the noise added thereto by the noise adding unit.

Abstract: A solid-state image sensor includes a pixel array unit including a plurality of pixels arranged in the form of an array, column signal lines adapted to transmit pixel signals output from pixels in respective columns, a noise adding unit adapted to add temporally constant and two-dimensional spatially random noise to the pixel signals transmitted via the column signal lines, and an analog-to-digital converter adapted to convert a signal level and a reference level of each pixel signal including the noise added thereto by the noise adding unit.

Abstract: Disclosed herein is a solid-state imaging device including: a plurality of pixel circuits each of which converts an optical signal into a pixel signal; a load current source circuit adapted to supply a load current, used to read out the pixel signal from the plurality of pixel circuits, to the pixel circuits on a column-by-column basis; a signal readout circuit adapted to read out a reference signal and the pixel signal from the pixel circuits on a row-by-row basis and output the difference between the reference and pixel signals that have been read out; and a control signal generation circuit adapted to generate a maintenance control signal used to maintain the load current constant during a readout period that lasts from when the reference signal is read out by the signal readout circuit to when the pixel signal is read out by the signal readout circuit.